-
公开(公告)号：US07368752B2
公开(公告)日：2008-05-06
申请号：US10839800
申请日：2004-05-06
申请人： Richard J. Luyken , Franz Hofmann , Lothar Risch , Dirk Manger , Wolfgang Rösner , Till Schlösser , Michael Specht
发明人： Richard J. Luyken , Franz Hofmann , Lothar Risch , Dirk Manger , Wolfgang Rösner , Till Schlösser , Michael Specht
IPC分类号： H01L27/108 , H01L29/12 , H01L31/112
CPC分类号： H01L27/10823 , H01L27/10808 , H01L27/10826 , H01L27/10829 , H01L27/10891 , H01L29/7851
摘要： A DRAM memory cell is provided with a selection transistor, which is arranged horizontally at a semiconductor substrate surface and has a first source/drain electrode, a second source/drain electrode, a channel layer arranged between the first and the second source/drain electrode in the semiconductor substrate, and a gate electrode, which is arranged along the channel layer and is electrically insulated from the channel layer, a storage capacitor, which has a first capacitor electrode and a second capacitor electrode, insulated from the first capacitor electrode, one of the capacitor electrodes of the storage capacitor being electrically conductively connected to one of the source/drain electrodes of the selection transistor, and a semiconductor substrate electrode on the rear side, the gate electrode enclosing the channel layer at at least two opposite sides.
摘要翻译： DRAM存储单元设置有选择晶体管，该晶体管被水平地布置在半导体衬底表面处并且具有第一源极/漏极，第二源极/漏极，布置在第一和第二源极/漏极之间的沟道层 在所述半导体基板中，沿着所述沟道层配置并与所述沟道层电绝缘的栅电极具有与所述第一电容电极绝缘的第一电容电极和第二电容电极的保持电容器， 所述存储电容器的电容器电极与所述选择晶体管的源极/漏极之一导电地连接，并且在后侧具有半导体衬底电极，所述栅电极在至少两个相对的两侧包围所述沟道层。
-
2.发明授权公开(公告)号：US06608340B1
公开(公告)日：2003-08-19
申请号：US09821853
申请日：2001-03-30
申请人： Franz Hofmann , Till Schlösser , Josef Willer
发明人： Franz Hofmann , Till Schlösser , Josef Willer
IPC分类号： H01L2972
CPC分类号： H01L27/10864
摘要： A depression extends from a main surface of the substrate to the inside of said substrate and has an upper area and an adjacent lower area. A cross-section of the upper area, parallel to the main surface, is provided with at least one corner. A cross-section of the lower area, parallel to the main surface, matches the cross-section of the upper area, particularly in the vicinity the upper area, with the following difference: each corner is rounded, whereby the cross section of the lower area is smaller than the cross-section of the upper area. In order to produce the indentation, the upper area is provided with an auxiliary spacer that is rounded by isotropic etching. The lower area is produced by selectively etching the substrate to form an auxiliary spacer.
摘要翻译： 凹陷从基板的主表面延伸到所述基板的内部，并且具有上部区域和相邻的下部区域。 平行于主表面的上部区域的横截面设置有至少一个角部。 平行于主表面的下部区域的横截面与上部区域的横截面特别是在上部区域附近匹配，具有以下差异：每个角都是圆形的，由此下部区域的横截面 面积小于上部区域的横截面。 为了产生凹陷，上部区域设置有通过各向同性蚀刻而被圆化的辅助间隔件。 通过选择性地蚀刻基板以形成辅助间隔物来产生下部区域。
-
公开(公告)号：US06576948B2
公开(公告)日：2003-06-10
申请号：US09873231
申请日：2001-06-04
IPC分类号： H01L27108
CPC分类号： H01L27/108
摘要： An integrated circuit contains a planar first transistor and a diode. The diode is connected between a first source/drain region of the first transistor and a gate electrode of the first transistor such that a charge is impeded from discharging from the gate electrode to the first source/drain region. A diode layer that is part of the diode is disposed on a portion of the first source/drain region. A conductive structure that is an additional part of the diode is disposed above a portion of the gate electrode and is disposed on the diode layer. The diode can be configured as a tunnel diode. The diode layer can be produced by thermal oxidation. Only one mask is required for producing the diode. A capacitor can be disposed above the diode. The first capacitor electrode of the capacitor is connected to the conductive structure.
摘要翻译： 集成电路包含平面第一晶体管和二极管。 二极管连接在第一晶体管的第一源极/漏极区域和第一晶体管的栅电极之间，使得电荷被阻止从栅电极放电到第一源极/漏极区域。 作为二极管的一部分的二极管层设置在第一源极/漏极区域的一部分上。 作为二极管的附加部分的导电结构设置在栅电极的一部分上方并且设置在二极管层上。 二极管可以配置为隧道二极管。 二极管层可以通过热氧化生产。 制造二极管只需要一个掩模。 电容器可以设置在二极管的上方。 电容器的第一电容器电极连接到导电结构。
-
公开(公告)号：US06566193B2
公开(公告)日：2003-05-20
申请号：US10096473
申请日：2002-03-12
申请人： Franz Hofmann , Till Schlösser
发明人： Franz Hofmann , Till Schlösser
IPC分类号： H01L218242
CPC分类号： H01L27/10864 , H01L27/10876
摘要： The process first forms trench capacitors in a substrate, which are filled with a trench fill and in which a first insulating layer is disposed over the conductive trench fill. The first insulating layer is then overgrown laterally by a selectively grown epitaxial layer. The selective epitaxial layer is so structured that a ridge is formed from it. Next, the ridge is partially undercut, whereby the etch selectivity of the ridge relative to the first insulating layer is utilized for a wet-chemical etching procedure. Next, a contact layer is arranged in the undercut region, which connects the ridge and a transistor that has been formed in the ridge to the conductive trench fill. Lateral margin ridges are then formed next to the ridge as a gate, and a doped region is incorporated into the ridge as a source/drain zone of the transistor.
-
5.发明授权Integrated dynamic memory cell having a small area of extent, and a method for its production 失效具有小范围的集成动态存储单元及其制造方法公开(公告)号：US06534820B2
公开(公告)日：2003-03-18
申请号：US09745565
申请日：2000-12-21
IPC分类号： H01L29788
CPC分类号： H01L27/10844 , H01L27/108 , H01L27/10876
摘要： An integrated dynamic memory cell having a small area of extent on a semiconductor substrate is described. The memory cell has a selection MOSFET with a gate connection area that is connected to a word line, a source connection doping area which is connected to a bit line, and a drain connection doping area. A memory MOSFET has a gate connection area which is connected via a thin dielectric layer to a connection doping region which connects a source connection doping area of the memory MOSFET to the drain connection doping area of the selection MOSFET. The memory MOSFET further has a drain connection doping area that is connected to a supply voltage. The selection and memory MOSFETs are disposed on opposite sidewalls of a trench, which is etched in the substrate, and the connection doping region forms a bottom of the trench.
摘要翻译： 描述在半导体衬底上具有小面积范围的集成动态存储单元。 存储单元具有选择MOSFET，其具有连接到字线的栅极连接区域，连接到位线的源极连接掺杂区域和漏极连接掺杂区域。 存储器MOSFET具有通过薄介电层连接到将存储器MOSFET的源极连接掺杂区域连接到选择MOSFET的漏极连接掺杂区域的连接掺杂区域的栅极连接区域。 存储器MOSFET还具有连接到电源电压的漏极连接掺杂区域。 选择和存储器MOSFET被布置在沟槽的相对的侧壁上，沟槽被蚀刻在衬底中，并且连接掺杂区域形成沟槽的底部。
-
公开(公告)号：US06274453B1
公开(公告)日：2001-08-14
申请号：US09405916
申请日：1999-09-24
IPC分类号： H01L2120
CPC分类号： H01L27/10876 , H01L27/10805 , H01L27/10808
摘要： A memory cell configuration with many ferroelectric or dynamic memory cells provided in a semiconductor substrate. Alternating trenches and lands extend parallel in a longitudinal direction of a main face of the semiconductor substrate. A channel stop layer is buried in the lands and divides the semiconductor substrate into a lower region that includes the trench bottoms and an upper region that includes the land ridges. First planar selection transistors with intervening trench channel stop regions are disposed along the trench bottoms. Second planar selection transistors with intervening land channel stop regions are disposed along the land ridges. The first and second selection transistors have respective source, gate, channel and drain regions, which are offset longitudinally from one another such that source and drain regions of the first and second selection transistors alternate in the transverse direction in the main face of the semiconductor substrate. Isolated word lines are provided which extend in the transverse direction along the main face for triggering the first and second selection transistors in the respective gate regions. Isolated bit lines are provided which extend in an oblique direction along the main face for connecting the first and second selection transistors in the respective source regions. And preferably ferroelectric capacitors are each connected to the drain regions of applicable selection transistors via capacitor contacts.
摘要翻译： 具有设置在半导体衬底中的许多铁电或动态存储单元的存储单元配置。 交替沟槽和焊盘在半导体衬底的主面的纵向方向上平行延伸。 沟道阻挡层埋在焊盘中，并将半导体衬底分成包括沟槽底部的下部区域和包括焊盘脊的上部区域。 具有中间沟槽沟道阻挡区域的第一平面选择晶体管沿沟槽底部设置。 具有中间的槽脊通道停止区域的第二平面选择晶体管沿着脊脊布置。 第一和第二选择晶体管具有各自的源极，栅极，沟道和漏极区域，它们彼此纵向偏移，使得第一和第二选择晶体管的源极和漏极区域在半导体衬底的主面中在横向方向上交替 。 提供隔离的字线，其沿着主面沿横向方向延伸，用于触发各个栅极区域中的第一和第二选择晶体管。 提供了沿着主面沿倾斜方向延伸的隔离位线，用于连接各个源极区域中的第一和第二选择晶体管。 并且优选地，铁电电容器通过电容器触点连接到适用的选择晶体管的漏极区域。
-
公开(公告)号：US06438022B2
公开(公告)日：2002-08-20
申请号：US09854259
申请日：2001-05-10
IPC分类号： G11C1122
CPC分类号： H01L27/11502 , G11C11/22 , H01L27/11507
摘要： The memory cells of a memory cell configuration each have a selection transistor, a memory transistor and a ferroelectric capacitor. The selection transistor and the memory transistor are connected in series. The ferroelectric capacitor is connected between a control electrode of the memory transistor and a first terminal of the selection transistor.
摘要翻译： 存储单元结构的存储单元分别具有选择晶体管，存储晶体管和铁电电容器。 选择晶体管和存储晶体管串联连接。 铁电电容器连接在存储晶体管的控制电极和选择晶体管的第一端子之间。
-
公开(公告)号：US06399433B2
公开(公告)日：2002-06-04
申请号：US09773218
申请日：2001-01-31
IPC分类号： H01L218242
CPC分类号： H01L27/10852 , H01L27/10817 , H01L28/55
摘要： A method for producing a storage cell includes forming a polycrystalline silicon layer on a semiconductor body having at least one selection transistor disposed in a first plane. An interspace is formed between two adjacent structures of the layer and one of the adjacent structures of the layer is placed on a surface of a first silicon plug. A cell plate electrode is formed in the interspace and a trench is formed in the layer. The trench reaches as far as the first plug surface and is filled with an insulating layer. The-layer is removed. A storage capacitor having a high-epsilon or ferroelectric dielectric and a storage node electrode is formed. The capacitor is disposed in a second plane in and above the body. The insulating layer is replaced with silicon to form a second silicon plug directly connected to the first plug. The second plug is electrically connected to the storage node electrode, and the first plane is electrically connected to the second plane through the first and second plugs.
摘要翻译： 一种存储单元的制造方法包括在半导体本体上形成多晶硅层，该多晶硅层具有设置在第一平面中的至少一个选择晶体管。 在层的两个相邻结构之间形成间隙，并且该层的相邻结构之一被放置在第一硅插头的表面上。 在该间隙中形成单元板电极，并在该层中形成沟槽。 沟槽达到第一插头表面的最远处，并且填充有绝缘层。 该层被删除。 形成具有高ε或铁电介质的存储电容器和存储节点电极。 电容器设置在身体内和上方的第二平面内。 绝缘层被硅替代以形成直接连接到第一插头的第二硅插头。 第二插头电连接到存储节点电极，第一平面通过第一和第二插头电连接到第二平面。
-
9.发明授权Memory cell configuration, method for fabricating it and methods for operating it 失效存储单元配置，其制造方法及其操作方法公开(公告)号：US06229169B1
公开(公告)日：2001-05-08
申请号：US09213724
申请日：1998-12-17
申请人： Franz Hofmann , Wolfgang Krautschneider , Wolfgang Rösner , Lothar Risch , Till Schlösser , Paul-Werner Basse
发明人： Franz Hofmann , Wolfgang Krautschneider , Wolfgang Rösner , Lothar Risch , Till Schlösser , Paul-Werner Basse
IPC分类号： H01L27108
CPC分类号： H01L27/11502 , H01L27/108 , H01L27/10823 , H01L27/10876 , H01L27/115 , H01L27/11507
摘要： A memory cell configuration contains a multiplicity of memory cells in a semiconductor substrate. Each of the memory cells has a selection transistor connected between a bit line and a storage element. The memory cells can each be driven via a first word line and a second word line, the first word line and the second word line crossing one another. The memory cell configuration is, in particular, a DRAM configuration.
摘要翻译： 存储单元配置在半导体衬底中包含多个存储单元。 每个存储单元具有连接在位线和存储元件之间的选择晶体管。 每个存储器单元可以通过第一字线和第二字线驱动，第一字线和第二字线彼此交叉。 存储单元配置尤其是DRAM配置。
-
公开(公告)号：US07030434B1
公开(公告)日：2006-04-18
申请号：US10089570
申请日：2000-09-28
IPC分类号： H01L31/062 , H01L31/113
CPC分类号： H01L27/14609
摘要： A memory transistor and a selection transistor of an image sensor are connected in series and between a bit line (B5) and a reference line (R5). A gate electrode of the selection transistor is connected to a word line (W5), which extends crosswise in relation to the bit line (B5). A diode of the image sensor is switched between a gate electrode (G5) of the memory transistor and a first source/drain area (S/D5) of the memory transistor, which is connected to the selection transistor in such a way is polarized towards the first source/drain area (S/D5) of the memory transistor and in the reverse direction. A photodiode of the image sensor is switched between a voltage connection and either the gate electrode (G5) of the memory transistor or the first source/drain area (S/D5) of the memory transistor in such a way that it is polarized towards the voltage connection and in the reverse direction.
摘要翻译： 图像传感器的存储晶体管和选择晶体管串联连接在位线（B 5）和基准线（R 5）之间。 选择晶体管的栅电极连接到相对于位线（B 5）横向延伸的字线（W 5）。 图像传感器的二极管在存储晶体管的栅电极（G 5）和存储晶体管的第一源极/漏极区域（S / D 5）之间切换，以这样的方式连接到选择晶体管 朝向存储晶体管的第一源极/漏极区域（S / D 5）偏振并且沿相反方向偏振。 图像传感器的光电二极管在存储晶体管的栅电极（G 5）或存储晶体管的第一源/漏区（S / D 5）的电压连接和栅极之间切换，使得其被极化 朝向电压连接和相反方向。
-
-
-
-
-
-
-
-
-
搜索结果
179 条记录 (耗时 0.019 秒)
