公开(公告)号：US5317836A

公开(公告)日：1994-06-07

申请号：US980358

申请日：1992-11-23

申请人： Fumihiko Hasegawa ,  Masayuki Yamada ,  Hiroshi Kawano ,  Tatsuo Ohtani

发明人： Fumihiko Hasegawa ,  Masayuki Yamada ,  Hiroshi Kawano ,  Tatsuo Ohtani

IPC分类号： B24B9/00 ,  B23Q1/36 ,  B24B9/06 ,  H01L21/304

CPC分类号： H01L21/02021 ,  B23Q1/36 ,  B24B9/065

摘要： An apparatus for polishing edge chamfers of a semiconductor wafer to mirror gloss, having a rotatory cylindrical buff formed with annular groove(s) in its side and a wafer vacuum holder capable of holding and turning the wafer circumferentially, wherein the cylindrical buff is adapted to shift axially, and the annular groove has a width substantially greater than the thickness of the wafer, and a drive mechanism for axially biasing the cylindrical buff is provided.

摘要翻译： 一种用于将半导体晶片的边缘倒角抛光成镜面光泽的装置，具有在其侧面形成有环形槽的旋转圆柱形抛光器和能够周向保持和转动晶片的晶片真空保持器，其中圆柱形抛光器适于 并且环形槽具有基本上大于晶片厚度的宽度，并且提供用于轴向偏压圆柱形抛光器的驱动机构。

公开(公告)号：US5316620A

公开(公告)日：1994-05-31

申请号：US7888

申请日：1993-01-22

申请人： Fumihiko Hasegawa ,  Tatsuo Ohtani ,  Hiroshi Kawano ,  Masayuki Yamada

发明人： Fumihiko Hasegawa ,  Tatsuo Ohtani ,  Hiroshi Kawano ,  Masayuki Yamada

IPC分类号： B24B9/00 ,  B24B9/06 ,  H01L21/304 ,  H01L21/306 ,  B44C1/22 ,  H01L21/463

CPC分类号： H01L21/02021 ,  B24B9/065 ,  Y10S438/959

摘要： A method for polishing peripheral chamfers of a semiconductor wafer comprising steps of: (a) turning a cylindrical cup-like rotatory buff having an internal polish groove formed in the inner wall surface thereof, the groove having a profile complementary to the profile of the chamfered wafer edge to be polished; (b) disposing the wafer inside the turning buff; (c) turning the wafer at a relatively low rate; and (d) pressing the wafer edge into the running internal polish groove with an appropriate pressure; furthermore there is proposed an apparatus for this novel method including the cylindrical cup-like rotatory buff as described above.

摘要翻译： 一种用于抛光半导体晶片的周边倒角的方法，包括以下步骤：（a）转动在其内壁表面中形成有内部抛光槽的圆柱形杯状旋转抛光器，所述凹槽具有与倒角的轮廓互补的轮廓 晶圆边缘要抛光; （b）将晶片放置在转动抛光器内; （c）以相对较低的速率转动晶片; 和（d）以适当的压力将晶片边缘压入行进的内部抛光槽; 此外，提出了一种用于这种新方法的装置，其包括如上所述的圆柱形杯状旋转抛光器。

公开(公告)号：US5882539A

公开(公告)日：1999-03-16

申请号：US700604

申请日：1996-08-14

申请人： Fumihiko Hasegawa ,  Yasuyoshi Kuroda ,  Masayuki Yamada

发明人： Fumihiko Hasegawa ,  Yasuyoshi Kuroda ,  Masayuki Yamada

IPC分类号： B24B9/06 ,  B24B37/02 ,  B24B37/04 ,  H01L21/304 ,  B24B1/00

CPC分类号： H01L21/02021 ,  B24B37/02 ,  B24B37/042 ,  B24B9/065 ,  Y10S438/906 ,  Y10S438/928 ,  Y10S438/959 ,  Y10S438/974

摘要： A wafer processing method which can polish the chamfered portion of a wafer quickly, is disclosed. The processing method comprises the steps of: chamfering a peripheral portion of a wafer obtained by slicing an ingot, by grinding; lapping the wafer; etching the chamfered or lapped wafer; thereafter honing the entirety of the chamfered peripheral portion of the wafer by using a grinding stone while applying a predetermined load to the grinding stone; and thereafter polishing the entirety of the chamfered peripheral portion and the front and rear surfaces of the wafer.

摘要翻译： 公开了可以快速抛光晶片的倒角部分的晶片处理方法。 该处理方法包括以下步骤：通过研磨将通过切割锭块获得的晶片的周边部分倒角; 研磨晶圆; 蚀刻倒角或重叠的晶片; 然后通过使用研磨石珩磨整个切削的周边部分，同时向研磨石施加预定的载荷; 然后对整个切削的周边部分和晶片的前表面和后表面进行抛光。

公开(公告)号：US5282289A

公开(公告)日：1994-02-01

申请号：US998076

申请日：1992-12-28

申请人： Fumihiko Hasegawa ,  Makoto Tsukada ,  Hideo Kudo ,  Masayuki Yamada ,  Isao Uchiyama

发明人： Fumihiko Hasegawa ,  Makoto Tsukada ,  Hideo Kudo ,  Masayuki Yamada ,  Isao Uchiyama

IPC分类号： H01L21/304 ,  B08B1/04 ,  H01L21/00 ,  B08B11/02

CPC分类号： H01L21/67028 ,  B08B1/04

摘要： A scrubber cleaner for cleaning the unsucked face and peripheral chamfers of a semiconductor wafer. A wafer holder capable of holding the wafer by vacuum suction and turning the wafer circumferentially, and including a wafer suction head for fixing the wafer on it and a motor to rotate the suction head. A brush assembly including a rotatory plate having a brushing surface on one side consisting of a flat ring portion and a side-of-cylinder portion, and being capable of shifting axially and in radial directions; a motor for rotating the rotatory plate circumferentially; an air cylinder for shifting the rotatory plate axially; and another air cylinder for shifting the rotatory plate in radial directions. The side-of-cylinder portion of the brushing surface axially extends from the inner boundary of the ring portion, and the rotatory plate is disposed such that the flat ring portion of the brushing surface of the brush is opposed to and in parallel to the unsucked face of the wafer which is held on the suction head.

摘要翻译： 洗涤器清洁器，用于清洁半导体晶片的未起落的表面和周边倒角。 一种晶片保持器，其能够通过真空吸附保持晶片，并且周向地转动晶片，并且包括用于将晶片固定在其上的晶片吸入头和用于旋转吸头的电动机。 一种刷组件，包括：旋转板，其一侧具有由平环部和侧筒部组成的一侧的刷表面，能够沿轴向和径向移动; 周向旋转旋转板的马达; 轴向移动旋转板的气缸; 以及用于沿径向方向移动旋转板的另一气缸。 刷子表面的圆筒部分从环部的内边缘轴向延伸，并且旋转板被设置成使得刷子的刷洗表面的平环部分与未塞的部件相对并平行 保持在吸头上的晶片的表面。

公开(公告)号：US5514025A

公开(公告)日：1996-05-07

申请号：US122941

申请日：1993-09-20

申请人： Fumihiko Hasegawa ,  Masayuki Yamada

发明人： Fumihiko Hasegawa ,  Masayuki Yamada

IPC分类号： B24B9/00 ,  B24B9/06 ,  B28D5/00 ,  H01L21/304

CPC分类号： B24B9/065

摘要： An apparatus for chamfering the peripheral edge of a semiconductor wafer to specular finish, consisting of a turn table with an abrasive table surface, and a wafer holder, which holds the wafer firmly by sucking one face of the wafer, turn the wafer circumferentially, and press the wafer edge against the abrasive table surface in a manner such that the edge of the wafer is brought and kept in contact with the table surface in a way such that the triangle formed by the center of the turn table surface, the center of the wafer and said contact point is normal to the turn table surface and the angle formed between the turn table surface and the wafer is at the beginning substantially close to 0.degree. but said angle is continuously or stepwise increased to a value substantially close to 180.degree., and the wafer holder also moves the wafer in a way such that the contact point is moved on the turn table surface.

摘要翻译： 用于将半导体晶片的周缘倒角成镜面抛光的装置，由具有研磨台表面的转台和通过吸取晶片的一个表面牢固地保持晶片的晶片保持器将晶片周向转动， 将晶片边缘按照研磨台表面的方式，使得晶片的边缘被带入并保持与台面接触，使得由转台表面的中心形成的三角形 晶片和所述接触点与转台表面正交，并且转台表面和晶片之间形成的角度基本上接近0°，但所述角度连续或逐步增加到基本接近180°的值， 并且晶片保持器还以使得接触点在转台表面上移动的方式移动晶片。

公开(公告)号：US09284633B2

公开(公告)日：2016-03-15

申请号：US13336402

申请日：2011-12-23

申请人： Masayuki Yamada ,  Reki Takaku ,  Haruki Ohnishi ,  Kenichi Okuno ,  Kenichi Imai ,  Shinji Tanaka ,  Kazuhiro Miki

发明人： Masayuki Yamada ,  Reki Takaku ,  Haruki Ohnishi ,  Kenichi Okuno ,  Kenichi Imai ,  Shinji Tanaka ,  Kazuhiro Miki

IPC分类号： C21D8/00 ,  C22C38/02 ,  C21D1/26 ,  C21D1/28 ,  C21D6/00 ,  C22C38/00 ,  C22C38/04 ,  C22C38/44 ,  C22C38/46 ,  C22C38/48 ,  C22C38/50 ,  C22C38/52 ,  C22C38/54 ,  C21D9/00 ,  C21D9/50

CPC分类号： C22C38/02 ,  C21D1/26 ,  C21D1/28 ,  C21D6/002 ,  C21D9/0068 ,  C21D9/50 ,  C21D2211/001 ,  C21D2211/004 ,  C21D2211/008 ,  C22C38/001 ,  C22C38/04 ,  C22C38/44 ,  C22C38/46 ,  C22C38/48 ,  C22C38/50 ,  C22C38/52 ,  C22C38/54

摘要： A heat resistant cast steel containing, in mass %, C: 0.05-0.15, Si: 0.03-0.2, Mn: 0.1-1.5, Ni: 0.1-1, Cr: 8-10.5, Mo: 0.2-1.5, V: 0.1-0.3, Co: 0.1-5, W: 0.1-5, N: 0.005-0.03, Nb: 0.01-0.2, B: 0.002-0.015, Ti: 0.01-0.1, Fe and unavoidable impurities. A method for manufacturing a heat resistant cast steel, the method including melting raw materials to obtain a molten metal, refining and degassing the molten metal, pouring the molten metal into a predetermined mold to form a shape, performing an annealing treatment at a temperature of 1000 to 1150° C., performing a normalizing treatment at a temperature of 1000 to 1200° C., performing a first stage tempering treatment at a temperature of 500 to 700° C., and performing a second stage tempering treatment at a temperature of 700 to 780° C.

摘要翻译： 以质量％计含有C：0.05-0.15，Si：0.03-0.2，Mn：0.1-1.5，Ni：0.1-1，Cr：8-10.5，Mo：0.2-1.5，V：0.1的耐热铸钢 -0.3，Co：0.1-5，W：0.1-5，N：0.005-0.03，Nb：0.01-0.2，B：0.002-0.015，Ti：0.01-0.1，Fe和不可避免的杂质。 一种制造耐热铸钢的方法，该方法包括熔化原料以获得熔融金属，精炼和脱气熔融金属，将熔融金属倒入预定的模具中以形成形状，在温度为 1000〜1150℃，在1000〜1200℃的温度下进行标准化处理，在500〜700℃的温度下进行第一阶段回火处理，在温度为 700〜780℃

公开(公告)号：US20140227562A1

公开(公告)日：2014-08-14

申请号：US14241663

申请日：2012-09-03

申请人： Haruki Kamizori ,  Itaru Gosho ,  Masayuki Yamada ,  Fusaji Kita

发明人： Haruki Kamizori ,  Itaru Gosho ,  Masayuki Yamada ,  Fusaji Kita

IPC分类号： H02J7/00 ,  H01M2/34

CPC分类号： H02J7/0052 ,  H01M2/34 ,  H01M4/131 ,  H01M4/366 ,  H01M4/483 ,  H01M10/052 ,  H01M2200/106 ,  Y02T10/7011

摘要： A lithium secondary-battery pack of the present invention includes: a lithium secondary battery including an electrode body and a non-aqueous electrolyte, the electrode body including a positive electrode and a negative electrode facing each other, and a separator interposed therebetween; a PTC (Positive Temperature Coefficient) element; and a protection circuit including a field-effect transistor, wherein the negative electrode includes a negative electrode material mixture layer containing a Si-containing material as a negative electrode active material, and, where Z represents an impedance (Ω) of the lithium secondary-battery pack and Q represents a capacity (Ah) of the lithium secondary-battery pack, an impedance capacity index represented by Z/Q is 0.055 Ω/Ah or less.

摘要翻译： 本发明的锂二次电池组包括：锂二次电池，其包括电极体和非水电解质，所述电极体包括正极和负极彼此面对的隔膜; PTC（正温度系数）元件; 以及包括场效应晶体管的保护电路，其中所述负极包括含有含Si材料作为负极活性物质的负极材料混合物层，并且其中Z表示所述锂二次电池的阻抗（＆amp; OHgr） 电池组，Q表示锂二次电池组的容量（Ah），Z / Q表示的阻抗容量指数为0.055＆OHgr / Ah以下。

公开(公告)号：US08790829B2

公开(公告)日：2014-07-29

申请号：US13393455

申请日：2011-09-08

申请人： Satoshi Kono ,  Masayuki Yamada ,  Akira Inaba ,  Kazutaka Matsuo

发明人： Satoshi Kono ,  Masayuki Yamada ,  Akira Inaba ,  Kazutaka Matsuo

IPC分类号： H01M4/13

CPC分类号： H01M4/587 ,  H01M4/364 ,  H01M4/386 ,  H01M4/505 ,  H01M4/525 ,  H01M10/0525

摘要： The present invention provides a nonaqueous secondary battery with a high capacity, an excellent level of safety, and excellent charge-discharge cycle characteristics. The negative electrode contains, as negative electrode active materials, a graphite carbon material and a material containing Si as a constituent element, and the positive electrode includes, as a positive electrode active material, a lithium-containing composite oxide represented by the following general composition formula (1) and containing sulfur in a range of 0.01 mass % to 0.5 mass %: Li1+yMO2  (1) where y satisfies −0.3≦y

摘要翻译： 本发明提供一种容量大，安全性优异，充放电循环特性优异的非水系二次电池。 负极包含作为负极活性物质的石墨碳材料和含有Si作为构成元素的材料，正极包含作为正极活性物质的由以下总体组成表示的含锂复合氧化物 式（1），含有0.01质量％〜0.5质量％范围的硫：Li1 + yMO2（1）其中y满足-0.3＆nlE; y <0.3，M表示包含Ni，Co， Mn，Mg和Al，Ba，Sr，Ti和Zr中的至少一种，并且当a，b，c和d分别表示Ni，Co，Mn和Mg时，以mol％表示，e表示Al， 构成M，a，b，c，d和e的所有元素的Ba，Sr，Ti和Zr的摩尔％满足70＆nlE; a＆nlE; 97,0.5