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公开(公告)号：US3691537A
公开(公告)日：1972-09-12
申请号：US3691537D
申请日：1971-05-26
Applicant: GEN ELECTRIC
Inventor： BURGESS JAMES F , NEUGEBAUER CONSTANTINE A
IPC: G11C11/403 , G11C11/405 , G11C11/406 , G11C11/412 , G11C11/24 , G11C11/40
CPC classification number: G11C11/403 , G11C11/405 , G11C11/406 , G11C11/412
Abstract: Voltage losses, and consequent reduced transconductance, can be overcome in metal-oxide-semiconductor (MOS) circuits by the use of a voltage variable coupling capacitor comprising a drain and a gate electrode. Since the capacitor is voltage variable, selective coupling is obtainable. In a dynamic memory cell, a voltage variable capacitor connected to the storage node selectively couples enabling to the storage node to increase the transconductance of the read transistor. Selective coupling is also used in apparatus ancillary to the memory cell to enhance the ''''refresh'''' operation. A flip-flop type of memory is also disclosed in which an enhanced output signal is obtained by selective coupling.
Abstract translation: 通过使用包括漏极和栅电极的电压可变耦合电容器，可以在金属氧化物半导体（MOS）电路中克服电压损耗和随之而来的降低的跨导。 由于电容器是电压可变的，所以可以进行选择耦合。 在动态存储单元中，连接到存储节点的电压可变电容器选择性地将使能到存储节点耦合以增加读取晶体管的跨导。 选择性耦合也用于辅助存储器单元的设备中，以增强“刷新”操作。 还公开了一种触发器类型的存储器，其中通过选择性耦合获得增强的输出信号。
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2.发明授权
公开(公告)号：US3614829A
公开(公告)日：1971-10-26
申请号：US3614829D
申请日：1969-12-08
Applicant: GEN ELECTRIC
Inventor： BURGESS JAMES F , NEUGEBAUER CONSTANTINE A , JOYNSON REUBEN E
IPC: H01L27/088 , H01L21/00 , H01L21/8234 , H01L21/8238 , H01L23/29 , H01L29/00 , H01L29/78 , B01J17/00 , H01G13/00
CPC classification number: H01L23/291 , H01L21/00 , H01L21/8238 , H01L29/00 , H01L2924/0002 , Y10S148/043 , Y10S148/053 , Y10S148/103 , Y10S148/105 , Y10S148/151 , H01L2924/00
Abstract: HIGH STABLITY, SELF-REGISTERED FIELD EFFECT TRANSISTORS ARE FORMED BY ETCHING THE METAL GATE ELECTRODE SIMULTANEOUSLY WITH EXPOSURE OF SURFACE ADJACENT AREAS OF A SEMICONDUCTIVE WAFER, GROWING AN ACTIVATOR CONTAINING GLASS ATOP ONLY THE EXPOSED AREAS OF THE WAFER BY PASSING A GASEOUS STREAM CONTAINING A MILD OXIDIZING AGENT AND AN ACTIVATOR IMPURITY ACROSS THE ETCHED FACE OF THE WAFER HEATED TO A TEMPERATURE BETWEEN 700*C. AND 1000*C., AND SUBSEQUENTLY BAKING THE SEMICONDUCTIVE WAFER IN A REDUCING ATMOSPHERE AT TEMPERATURES IN EXCESS OF 1000*C. TO FORM THE SOURCE AND DRAIN REGIONS OF THE SEMICONDUCTIVE WAFER. IN A PARTICULARLY PREFERRED EMBODIMENT, A GASEOUS STREAM CONTAINING 5-10% HYDROGEN AND 90-95% HELIUM OR ARGON IS BUBBLED THROUGH WATER AND ETHYL BORATE SOLUTIONS AT ROOM TEMPERATURE WHEREUPON THE STREAM IS PASSED OVER AN ETCHED WAFER TO FORM A SILICO-BORATE GLASS ATOP THE EXPOSED SILICON SURFACE. THE SEMICONDUCTIV WAFER THEN IS BAKED FOR APPROXIMATELY 4 HOURS AT 1000*C. IN A NITROGEN ATMOSPHERE CONTAINING 5-10% BY VOLUME HYDROGEN TO DRIVE THE ACTIVATOR IMPURITIES INTO THE WAFER. A TECHNIQUE FOR FORMING COMPLEMENTARY PAIRS OF HIGH STABILITY SELF-REGISTERED FIELD EFFECT TRANSISTORS ON A SINGLE SUBSTRATE ALSO IS DISCLOSED.
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公开(公告)号：US3493475A
公开(公告)日：1970-02-03
申请号：US3493475D
申请日：1967-02-13
Applicant: GEN ELECTRIC
Inventor： NEUGEBAUER CONSTANTINE A , RAIRDEN JOHN R , JOYNSON REUBEN E
CPC classification number: H01L39/24 , G11C11/44 , Y10S428/93 , Y10S505/818 , Y10S505/82 , Y10S505/856 , Y10S505/882 , Y10S505/917 , Y10T29/49014
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公开(公告)号：US3436258A
公开(公告)日：1969-04-01
申请号：US3436258D
申请日：1965-12-30
Applicant: GEN ELECTRIC
Inventor： NEUGEBAUER CONSTANTINE A , RAIRDEN JOHN R , JOYNSON REUBEN E JR
CPC classification number: C23C14/16 , C23C14/58 , C23C14/5853 , H01L39/00 , Y10S428/93 , Y10S428/935 , Y10S428/936 , Y10S428/938 , Y10S505/818 , Y10S505/819 , Y10T29/49014 , Y10T428/12819
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公开(公告)号：US3362214A
公开(公告)日：1968-01-09
申请号：US41631364
申请日：1964-12-07
Applicant: GEN ELECTRIC
Inventor： NEUGEBAUER CONSTANTINE A
CPC classification number: G01N25/00 , C23C14/545
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Patent Agency Ranking
公开(公告)号：US3328200A
公开(公告)日：1967-06-27
申请号：US31193563
申请日：1963-09-23
Applicant: GEN ELECTRIC
Inventor： NEUGEBAUER CONSTANTINE A
CPC classification number: C23C26/00 , C23C14/14 , C23C14/564 , H01L39/2409 , Y10S505/819
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公开(公告)号：US3325307A
公开(公告)日：1967-06-13
申请号：US40455864
申请日：1964-10-08
Applicant: GEN ELECTRIC
Inventor： NEUGEBAUER CONSTANTINE A , RAIRDEN III JOHN R
CPC classification number: H01L39/2406 , C23C14/024 , H01L39/00 , Y10S505/819
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公开(公告)号：US3911553A
公开(公告)日：1975-10-14
申请号：US44789074
申请日：1974-03-04
Applicant: GEN ELECTRIC
Inventor： BURGESS JAMES F , NEUGEBAUER CONSTANTINE A
CPC classification number: C04B37/026 , C04B2235/6584 , C04B2237/124 , C04B2237/126 , C04B2237/343 , C04B2237/407 , C04B2237/54 , C04B2237/706 , C04B2237/86 , Y10S228/903
Abstract: An improved method of bonding metal to a ceramic is described in which the metal is shaped, surface treated, and curved prior to heating the metal to form a eutectic bond between the metal and the ceramic. The surface treatment comprises heating the metal in a reactive atmosphere, e.g., in an oxidizing atmosphere to produce an oxide layer. The surface treatment is carried out at a temperature lower than the metal-metal oxide eutectic temperature.
Abstract translation: 描述了将金属与陶瓷结合的改进方法，其中金属在加热金属之前成型，表面处理和弯曲，以在金属和陶瓷之间形成共晶键。 表面处理包括在反应性气氛中，例如在氧化气氛中加热金属，以产生氧化物层。 表面处理在低于金属 - 金属氧化物共晶温度的温度下进行。
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公开(公告)号：US3519481A
公开(公告)日：1970-07-07
申请号：US3519481D
申请日：1966-10-14
Applicant: GEN ELECTRIC
Inventor： JOYNSON REUBEN E , NEUGEBAUER CONSTANTINE A , RAIRDEN JOHN R
CPC classification number: C23C14/027 , H01L39/02 , Y10T29/49014
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公开(公告)号：US3481778A
公开(公告)日：1969-12-02
申请号：US3481778D
申请日：1964-06-01
Applicant: GEN ELECTRIC
Inventor： NEUGEBAUER CONSTANTINE A
CPC classification number: C23C14/14 , C23C14/30 , C23C14/541 , C23C14/548 , C23C14/56 , C23C14/564 , H01L39/00 , Y10S420/901 , Y10S428/93 , Y10S505/812 , Y10S505/813 , Y10S505/819 , Y10T428/12681 , Y10T428/12819
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