公开(公告)号：US09412629B2

公开(公告)日：2016-08-09

申请号：US13658856

申请日：2012-10-24

Applicant: GLOBALFOUNDRIES INC.

Inventor： Son V. Nguyen ,  Vamsi K. Paruchuri ,  Deepika Priyadarshini ,  Tuan A. Vo

IPC: H01L21/00 ,  H01L21/67 ,  H01L23/00 ,  H01L25/00 ,  H01L27/06

CPC classification number: H01L21/67092 ,  H01L24/74 ,  H01L24/80 ,  H01L25/50 ,  H01L27/0688 ,  H01L2224/75251 ,  H01L2224/75252 ,  H01L2224/75303 ,  H01L2224/80209 ,  H01L2224/94 ,  H01L2224/80

Abstract: An apparatus and method bond a first wafer to a second wafer. The apparatus includes a first pressure application device configured to apply pressure at a central region of the first wafer in a direction toward the second wafer to initiate a bonding process between the first wafer and the second wafer. The apparatus also includes one or more second pressure application devices configured to apply pressure between the central region and an outer edge of the first wafer to complete the bonding process. The one or more second pressure application devices apply pressure on the first wafer after the first pressure application device has initiated the bonding process and while the first pressure application device continues to apply pressure at the central region. A controller controls the first pressure application device and the one or more second pressure application devices.

Abstract translation: 一种装置和方法将第一晶片连接到第二晶片。 该装置包括：第一压力施加装置，被配置为在朝向第二晶片的方向上在第一晶片的中心区域施加压力，以启动第一晶片和第二晶片之间的接合过程。 该设备还包括一个或多个第二压力施加装置，其被配置为在第一晶片的中心区域和外边缘之间施加压力以完成粘合过程。 一个或多个第二压力施加装置在第一压力施加装置已经开始粘合过程之后并且当第一压力施加装置继续在中心区域施加压力时，在第一晶片上施加压力。 控制器控制第一压力施加装置和一个或多个第二压力施加装置。

公开(公告)号：US09620481B2

公开(公告)日：2017-04-11

申请号：US14716300

申请日：2015-05-19

Applicant: GLOBALFOUNDRIES INC.

Inventor： Daniel C. Edelstein ,  Douglas C. La Tulipe, Jr. ,  Wei Lin ,  Deepika Priyadarshini ,  Spyridon Skordas ,  Tuan A. Vo ,  Kevin R. Winstel

IPC: H01L21/00 ,  H01L25/065 ,  H01L21/768 ,  H01L23/532 ,  H01L23/00 ,  H01L25/00 ,  H01L23/48

CPC classification number: H01L25/0657 ,  H01L21/76847 ,  H01L21/76849 ,  H01L21/76867 ,  H01L21/76885 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/532 ,  H01L23/53233 ,  H01L23/5329 ,  H01L24/00 ,  H01L24/03 ,  H01L24/05 ,  H01L24/08 ,  H01L24/09 ,  H01L24/80 ,  H01L24/89 ,  H01L25/50 ,  H01L2224/03845 ,  H01L2224/05007 ,  H01L2224/0508 ,  H01L2224/05147 ,  H01L2224/05547 ,  H01L2224/05576 ,  H01L2224/05647 ,  H01L2224/05686 ,  H01L2224/08121 ,  H01L2224/08145 ,  H01L2224/08146 ,  H01L2224/80009 ,  H01L2224/80097 ,  H01L2224/80357 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01026 ,  H01L2924/01027 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/0105 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01322 ,  H01L2924/05442 ,  H01L2924/00014 ,  H01L2924/20111 ,  H01L2924/00

Abstract: A metallic dopant element having a greater oxygen-affinity than copper is introduced into, and/or over, surface portions of copper-based metal pads and/or surfaces of a dielectric material layer embedding the copper-based metal pads in each of two substrates to be subsequently bonded. A dopant-metal silicate layer may be formed at the interface between the two substrates to contact portions of metal pads not in contact with a surface of another metal pad, thereby functioning as an oxygen barrier layer, and optionally as an adhesion material layer. A dopant metal rich portion may be formed in peripheral portions of the metal pads in contact with the dopant-metal silicate layer. A dopant-metal oxide portion may be formed in peripheral portions of the metal pads that are not in contact with a dopant-metal silicate layer.