公开(公告)号：US09620481B2

公开(公告)日：2017-04-11

申请号：US14716300

申请日：2015-05-19

Applicant: GLOBALFOUNDRIES INC.

Inventor： Daniel C. Edelstein ,  Douglas C. La Tulipe, Jr. ,  Wei Lin ,  Deepika Priyadarshini ,  Spyridon Skordas ,  Tuan A. Vo ,  Kevin R. Winstel

IPC: H01L21/00 ,  H01L25/065 ,  H01L21/768 ,  H01L23/532 ,  H01L23/00 ,  H01L25/00 ,  H01L23/48

CPC classification number: H01L25/0657 ,  H01L21/76847 ,  H01L21/76849 ,  H01L21/76867 ,  H01L21/76885 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/532 ,  H01L23/53233 ,  H01L23/5329 ,  H01L24/00 ,  H01L24/03 ,  H01L24/05 ,  H01L24/08 ,  H01L24/09 ,  H01L24/80 ,  H01L24/89 ,  H01L25/50 ,  H01L2224/03845 ,  H01L2224/05007 ,  H01L2224/0508 ,  H01L2224/05147 ,  H01L2224/05547 ,  H01L2224/05576 ,  H01L2224/05647 ,  H01L2224/05686 ,  H01L2224/08121 ,  H01L2224/08145 ,  H01L2224/08146 ,  H01L2224/80009 ,  H01L2224/80097 ,  H01L2224/80357 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01026 ,  H01L2924/01027 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/0105 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01322 ,  H01L2924/05442 ,  H01L2924/00014 ,  H01L2924/20111 ,  H01L2924/00

Abstract: A metallic dopant element having a greater oxygen-affinity than copper is introduced into, and/or over, surface portions of copper-based metal pads and/or surfaces of a dielectric material layer embedding the copper-based metal pads in each of two substrates to be subsequently bonded. A dopant-metal silicate layer may be formed at the interface between the two substrates to contact portions of metal pads not in contact with a surface of another metal pad, thereby functioning as an oxygen barrier layer, and optionally as an adhesion material layer. A dopant metal rich portion may be formed in peripheral portions of the metal pads in contact with the dopant-metal silicate layer. A dopant-metal oxide portion may be formed in peripheral portions of the metal pads that are not in contact with a dopant-metal silicate layer.

公开(公告)号：US09401303B2

公开(公告)日：2016-07-26

申请号：US14449185

申请日：2014-08-01

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Kangguo Cheng ,  Jonathan E. Faltermeier ,  Mukta G. Farooq ,  Wei Lin ,  Spyridon Skordas ,  Kevin R. Winstel

IPC: H01L21/762 ,  H01L27/12 ,  H01L21/02

CPC classification number: H01L21/76251 ,  H01L21/02304 ,  H01L21/02334 ,  H01L21/02345 ,  H01L21/31105 ,  H01L21/6835 ,  H01L21/76256 ,  H01L21/78 ,  H01L27/1203 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381

Abstract: The present invention relates generally to semiconductor structures and methods of manufacture and, more particularly, to the temporary bonding of a semiconductor wafer to handler wafer during processing. The semiconductor wafer may be temporarily bonded to the handler wafer by forming a sacrificial layer on a surface of a handler wafer, forming a first dielectric layer on a surface of the sacrificial layer, forming a second dielectric layer on a surface of a semiconductor wafer, and directly bonding the first dielectric layer and the second dielectric layer to form a bonding layer. After the semiconductor wafer is processed, it may be removed from the handler wafer along with the bonding layer by degrading the sacrificial layer with infrared radiation transmitted through the handler wafer.

Abstract translation: 本发明一般涉及半导体结构和制造方法，更具体地说，涉及在处理期间将半导体晶片临时粘接到处理器晶片。 半导体晶片可以通过在处理器晶片的表面上形成牺牲层而临时地结合到处理器晶片，在牺牲层的表面上形成第一电介质层，在半导体晶片的表面上形成第二电介质层， 并且直接接合第一介电层和第二介电层以形成接合层。 在处理半导体晶片之后，可以通过借助透射通过处理器晶片的红外辐射降低牺牲层，与粘合层一起从处理器晶片中去除。