公开(公告)号：US09620481B2

公开(公告)日：2017-04-11

申请号：US14716300

申请日：2015-05-19

Applicant: GLOBALFOUNDRIES INC.

Inventor： Daniel C. Edelstein ,  Douglas C. La Tulipe, Jr. ,  Wei Lin ,  Deepika Priyadarshini ,  Spyridon Skordas ,  Tuan A. Vo ,  Kevin R. Winstel

IPC: H01L21/00 ,  H01L25/065 ,  H01L21/768 ,  H01L23/532 ,  H01L23/00 ,  H01L25/00 ,  H01L23/48

CPC classification number: H01L25/0657 ,  H01L21/76847 ,  H01L21/76849 ,  H01L21/76867 ,  H01L21/76885 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/532 ,  H01L23/53233 ,  H01L23/5329 ,  H01L24/00 ,  H01L24/03 ,  H01L24/05 ,  H01L24/08 ,  H01L24/09 ,  H01L24/80 ,  H01L24/89 ,  H01L25/50 ,  H01L2224/03845 ,  H01L2224/05007 ,  H01L2224/0508 ,  H01L2224/05147 ,  H01L2224/05547 ,  H01L2224/05576 ,  H01L2224/05647 ,  H01L2224/05686 ,  H01L2224/08121 ,  H01L2224/08145 ,  H01L2224/08146 ,  H01L2224/80009 ,  H01L2224/80097 ,  H01L2224/80357 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01026 ,  H01L2924/01027 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/0105 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01322 ,  H01L2924/05442 ,  H01L2924/00014 ,  H01L2924/20111 ,  H01L2924/00

Abstract: A metallic dopant element having a greater oxygen-affinity than copper is introduced into, and/or over, surface portions of copper-based metal pads and/or surfaces of a dielectric material layer embedding the copper-based metal pads in each of two substrates to be subsequently bonded. A dopant-metal silicate layer may be formed at the interface between the two substrates to contact portions of metal pads not in contact with a surface of another metal pad, thereby functioning as an oxygen barrier layer, and optionally as an adhesion material layer. A dopant metal rich portion may be formed in peripheral portions of the metal pads in contact with the dopant-metal silicate layer. A dopant-metal oxide portion may be formed in peripheral portions of the metal pads that are not in contact with a dopant-metal silicate layer.

公开(公告)号：US09583628B2

公开(公告)日：2017-02-28

申请号：US14558904

申请日：2014-12-03

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Kangguo Cheng ,  Bruce B. Doris ,  Ali Khakifirooz ,  Douglas C. La Tulipe, Jr.

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/772 ,  H01L29/66 ,  H01L29/08 ,  H01L29/49 ,  H01L29/51 ,  H01L29/78

CPC classification number: H01L29/78603 ,  H01L29/0847 ,  H01L29/4908 ,  H01L29/495 ,  H01L29/517 ,  H01L29/518 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/66628 ,  H01L29/772 ,  H01L29/785 ,  H01L29/78654

Abstract: A device includes a semiconductor substrate. A gate stack on the semiconductor substrate includes a gate dielectric layer and a gate conductor layer. Low-k spacers are adjacent to the gate dielectric layer. Raised source/drain (RSD) regions are adjacent to the low-k spacers. The low-k spacers are embedded in an ILD on the RSD regions.

Abstract translation: 一种器件包括半导体衬底。 半导体衬底上的栅极叠层包括栅极介电层和栅极导体层。 低k间隔物与栅介质层相邻。 升高的源极/漏极（RSD）区域与低k间隔物相邻。 低k间隔物嵌入在RSD区域上的ILD中。