摘要:
Devices and methods of forming an integrated circuit (IC) that offer protection against ESD in high voltage (HV) circuit applications are disclosed. A device includes N ones of a field effect transistor (FET) stacked in series to provide an N-level stack, where N is an integer greater than 1. A first pad of the device is coupled to a first FET and a second pad is coupled to an Nth FET. The device also includes a stacked/distributed RC control circuit configured to cause a short circuit between the first pad and the second pad in response to an ESD event. During the ESD event, the RC control circuit is configured to concurrently provide sufficient voltage to control the N ones of the FET by turning them on using parasitic conduction to cause the short circuit.
摘要:
According to various embodiments, a transistor device may include a substrate. The transistor device may further include a drain terminal and a source terminal formed in the substrate, and a gate terminal formed over the substrate. The transistor device may further include an insulator structure arranged between the drain terminal and the source terminal, and at least partially under the gate terminal. The insulator structure may include an oxide member and a trench isolation region. The oxide member may be at least partially formed over the trench isolation region.
摘要:
A method for forming a high voltage device is disclosed. The method comprises providing a substrate defined with a high voltage device region. A device well is formed to encompass the high voltage device region. A drift region is formed within the device well. A body well is formed within the device well adjacent to the drift region. A variable thickness gate dielectric is formed on the substrate. Forming the variable thickness gate dielectric comprises patterned a sacrificial polysilicon layer and oxidizing the patterned sacrificial polysilicon layer to define a thick gate oxide having sloped sidewalls. A gate electrode is formed on the variable thickness gate dielectric, wherein the gate electrode partially overlaps the thick gate oxide. A first and a second source/drain (S/D) region is formed adjacent to first and second sides of the variable thickness gate dielectric.
摘要:
Devices and methods for forming a device are presented. A substrate with lightly doped first polarity type dopants is provided. A buried layer with heavily doped second polarity type dopants is formed in a top portion of the substrate. An epitaxial layer is formed over the buried layer. Deep trench isolation (DTI) regions which extend from top surface of the epitaxial layer to a portion of the substrate are formed. The DTI regions isolate different buried regions defined in the buried layer. Sinker tap regions which at least partially surround sides of the DTI regions and extend from the epitaxial layer into a portion of the buried layer are formed. The sinker tap region connects sinker taps to the buried layer. Shallow trench isolation (STI) regions are formed in the epitaxial layer. At least one transistor is formed on the epitaxial layer,
摘要:
Semiconductor device isolation and method of forming thereof are presented. A base substrate with lightly doped first polarity type dopants is provided. A buried layer with heavily doped second polarity type dopants is formed in a top portion of the substrate while an epitaxial layer is formed over the buried layer. First and second type deep trench isolation (DTI) structures which extend from surface of the epitaxial layer to a portion of the base substrate are formed to isolate different device regions defined in the substrate. The first and second type DTI structures have different width dimensions. Shallow trench isolation (STI) regions are formed in the epitaxial layer and at least one transistor is formed on the epitaxial layer. The first and second type DTI structures effectively isolate the transistor from other device regions and enhances the breakdown voltage.
摘要:
A device which includes a substrate defined with a device region having an ESD protection circuit is disclosed. The ESD protection circuit has a transistor. The transistor includes a gate having first and second sides. A first diffusion region is disposed adjacent to the first side of the gate and a second diffusion region is disposed in the device region displaced away from the second side of the gate. The first and second diffusion regions include dopants of a first polarity type. A drift isolation region is disposed between the gate and the second diffusion region. A first device well encompasses the device region and a second device well is disposed within the first device well. A drain well having dopants of the first polarity type is disposed under the second diffusion region and within the first device well.
摘要:
A device having a substrate defined with a device region is presented. The device region includes an ESD protection circuit having a transistor. The transistor includes a gate having first and second sides, a first diffusion region disposed adjacent to the first side of the gate and a second diffusion region displaced away from the second side of the gate. The device includes a first device well encompasses the device region and a second device well disposed within the first device well. The second device well encompasses the first diffusion region and at least a part of the gate. The device also includes a third well which is disposed within the second device well and a drain well which encompasses the second diffusion region and extends below the gate.
摘要:
A device having a substrate defined with a device region is presented. The device region includes an ESD protection circuit having a transistor. The transistor includes a gate having first and second sides, a first diffusion region adjacent to the first side of the gate and a second diffusion region displaced away from the second side of the gate. The device includes a first device well which encompasses the device region and a second device well disposed within the first device well. The device further includes a drift well which encompasses the second diffusion region of which edges of the drift well do not extend below the gate and is away from a channel region, and a drain well which is disposed under the second diffusion region and extends below the gate.