公开(公告)号：US20060065635A1

公开(公告)日：2006-03-30

申请号：US11271673

申请日：2005-11-09

申请人： Garo Derderian ,  Gurtej Sandhu ,  Ross Dando ,  Craig Carpenter ,  Philip Campbell

发明人： Garo Derderian ,  Gurtej Sandhu ,  Ross Dando ,  Craig Carpenter ,  Philip Campbell

IPC分类号： C23C16/52 ,  C03C15/00

CPC分类号： H01J37/32477 ,  C23C16/4404 ,  H01J37/3244 ,  H01J2237/022

摘要： Methods for passivating exposed surfaces within an apparatus for depositing thin films on a substrate are disclosed. Interior surfaces of a deposition chamber and conduits in communication therewith are passivated to prevent reactants used in a deposition process and reaction products from adsorbing or chemisorbing to the interior surfaces. The surfaces may be passivated for this purpose by surface treatments, lining, temperature regulation, or combinations thereof. A method for determining a temperature or temperature range at which to maintain a surface to minimize accumulation of reactants and reaction products is also disclosed. A deposition apparatus with passivated surfaces within the deposition chamber and gas flow paths is also disclosed.

摘要翻译： 公开了在用于在衬底上沉积薄膜的装置中的暴露表面钝化的方法。 沉积室的内表面和与其连通的导管被钝化以防止在沉积过程中使用的反应物和反应产物吸附或化学吸附到内表面。 表面可以通过表面处理，衬里，温度调节或其组合来钝化。 还公开了用于确定维持表面以使反应物和反应产物的积聚最小化的温度或温度范围的方法。 还公开了在沉积室和气体流动路径内具有钝化表面的沉积设备。

公开(公告)号：US20060289969A1

公开(公告)日：2006-12-28

申请号：US11458989

申请日：2006-07-20

申请人： Ross Dando ,  Dan Gealy ,  Craig Carpenter ,  Philip Campbell ,  Allen Mardian

发明人： Ross Dando ,  Dan Gealy ,  Craig Carpenter ,  Philip Campbell ,  Allen Mardian

IPC分类号： H01L23/58

CPC分类号： H01L21/02271 ,  C23C16/45523 ,  C23C16/483 ,  H01L21/0228 ,  H01L21/3141 ,  H01L29/78

摘要： Electronic devices and systems are provided with material structured from irradiation of a gas precursor with electromagnetic energy at a frequency tuned to an absorption frequency of the gas precursor. The frequency of the electromagnetic energy may be selected to impart specific amounts of energy to a gas precursor at a specific frequency that provides point of use activation of the gas precursor.

摘要翻译： 电子设备和系统具有由气体前体辐射的材料构成，其电磁能量被调谐到气体前体的吸收频率。 可以选择电磁能量的频率，以提供气体前体的特定量的能量，其以提供气体前体的使用激活的特定频率。

公开(公告)号：US20060288937A1

公开(公告)日：2006-12-28

申请号：US11458984

申请日：2006-07-20

申请人： Ross Dando ,  Dan Gealy ,  Craig Carpenter ,  Philip Campbell ,  Allen Mardian

发明人： Ross Dando ,  Dan Gealy ,  Craig Carpenter ,  Philip Campbell ,  Allen Mardian

IPC分类号： C23C16/00

CPC分类号： H01L21/02271 ,  C23C16/45523 ,  C23C16/483 ,  H01L21/0228 ,  H01L21/3141 ,  H01L29/78

摘要： Apparatus is provided for a method of forming a film on a substrate that includes activating a gas precursor to deposit a material on the substrate by irradiating the gas precursor with electromagnetic energy at a frequency tuned to an absorption frequency of the gas precursor. The electromagnetic energy may be provided by an array of lasers. The frequency of the laser beam may be selected by switching from one laser in the array to another laser in the array. The laser array may include laser diodes, one or more tunable lasers, solid state lasers, or gas lasers. The frequency of the electromagnetic energy may be selected to impart specific amounts of energy to a gas precursor at a specific frequency that provides point of use activation of the gas precursor.

摘要翻译： 提供了一种在衬底上形成膜的方法，该方法包括通过用调谐到气体前体的吸收频率的频率的电磁能照射气体前体来激活气体前体以将材料沉积在衬底上。 电磁能可由激光阵列提供。 可以通过从阵列中的一个激光器切换到阵列中的另一个激光器来选择激光束的频率。 激光器阵列可以包括激光二极管，一个或多个可调激光器，固态激光器或气体激光器。 可以选择电磁能量的频率，以提供气体前体的特定量的能量，其以提供气体前体的使用激活的特定频率。

公开(公告)号：US20070036895A1

公开(公告)日：2007-02-15

申请号：US11519430

申请日：2006-09-11

申请人： Craig Carpenter ,  Ross Dando ,  Philip Campbell

发明人： Craig Carpenter ,  Ross Dando ,  Philip Campbell

IPC分类号： H05H1/24 ,  C23C16/00

CPC分类号： C23C16/45536 ,  C23C16/45525 ,  C23C16/511 ,  C30B25/105 ,  H01J37/32192 ,  H01Q21/0087

摘要： The invention includes a deposition apparatus having a reaction chamber, and a microwave source external to the chamber. The microwave source is configured to direct microwave radiation toward the chamber. The chamber includes a window through which microwave radiation from the microwave source can pass into the chamber. The invention also includes deposition methods (such as CVD or ALD methods) in which microwave radiation is utilized to activate at least one component within a reaction chamber during deposition of a material over a substrate within the reaction chamber.

摘要翻译： 本发明包括具有反应室的沉积设备和室外的微波源。 微波源构造成将微波辐射引导到腔室。 该室包括一个窗口，通过该窗口，微波源的微波辐射可以通过该窗口进入腔室。 本发明还包括沉积方法（例如CVD或ALD方法），其中在将材料沉积在反应室内的衬底上时，利用微波辐射来激活反应室内的至少一个组分。

公开(公告)号：US20050142291A1

公开(公告)日：2005-06-30

申请号：US11062571

申请日：2005-02-22

申请人： Ross Dando ,  Philip Campbell ,  Craig Carpenter ,  Allen Mardian

发明人： Ross Dando ,  Philip Campbell ,  Craig Carpenter ,  Allen Mardian

IPC分类号： C23C16/44 ,  C23C16/00

CPC分类号： C23C16/4405 ,  C23C16/4412

摘要： A chemical vapor deposition chamber has a vacuum exhaust line extending therefrom. Material is deposited over a first plurality of substrates within the deposition chamber under conditions effective to deposit effluent product over internal walls of the vacuum exhaust line. At least a portion of the vacuum exhaust line is isolated from the deposition chamber. While isolating, a cleaning fluid is flowed to the vacuum exhaust line effective to at least reduce thickness of the effluent product over the internal walls within the vacuum exhaust line from what it was prior to initiating said flowing. After said flowing, the portion of the vacuum exhaust line, and the deposition chamber are provided in fluid communication with one another and material is deposited over a second plurality of substrates within the deposition chamber under conditions effective to deposit effluent product over internal walls of the vacuum exhaust line.

摘要翻译： 化学气相沉积室具有从其延伸的真空排气管。 在有效地将流出物产物沉积在真空排气管的内壁上的条件下，材料沉积在沉积室内的第一组多个衬底上。 真空排气管线的至少一部分与沉积室隔离。 在分离时，清洁流体流到真空排气管线，有效地至少将真空排气管内的内壁上的流出物的厚度从起始流动之前的厚度减小到最小。 在所述流动之后，真空排气管线的部分和沉积室彼此流体连通地设置，并且在有效地将流出物产物沉积在沉积物的内壁上的条件下，在沉积室内的第二多个基板上沉积材料 真空排气管。

公开(公告)号：US20050112890A1

公开(公告)日：2005-05-26

申请号：US11027726

申请日：2004-12-30

申请人： Philip Campbell ,  Craig Carpenter ,  Ross Dando ,  Kevin Hamer

发明人： Philip Campbell ,  Craig Carpenter ,  Ross Dando ,  Kevin Hamer

IPC分类号： C23C16/44 ,  C23C16/455 ,  H01L21/316 ,  H01L21/302 ,  H01L21/461

CPC分类号： C23C16/45519 ,  C23C16/45544 ,  C23C16/45568 ,  H01L21/31604

摘要： The invention includes a method of forming a layer on a semiconductor substrate that is provided within a reaction chamber. The chamber has at least two inlet ports that terminate in openings. A first material is flowed into the reaction chamber through the opening of a first of the inlet ports. At least a portion of the first material is deposited onto the substrate. The reaction chamber is purged by flowing an inert material into the reaction chamber through the opening of a second of the inlet ports. The inert material passes from the opening and through a distribution head that is positioned within the reaction chamber between the first and second openings. A second material can then be flowed into the chamber through an opening in a third inlet port and deposited onto the substrate. The invention also includes a chemical vapor deposition apparatus.

公开(公告)号：US20060027326A1

公开(公告)日：2006-02-09

申请号：US11208964

申请日：2005-08-22

申请人： Craig Carpenter ,  Ross Dando ,  Allen Mardian ,  Kevin Hamer ,  Raynald Cantin ,  Philip Campbell ,  Kimberly Tschepen ,  Randy Mercil

发明人： Craig Carpenter ,  Ross Dando ,  Allen Mardian ,  Kevin Hamer ,  Raynald Cantin ,  Philip Campbell ,  Kimberly Tschepen ,  Randy Mercil

IPC分类号： C23F1/00

CPC分类号： H01L21/67126 ,  C23C16/4409 ,  C23C16/54 ,  Y10S414/139

摘要： A semiconductor substrate processor includes a substrate transfer chamber and a plurality of substrate processing chambers connected therewith. An interfacial structure is received between at least one of the processing chambers and the transfer chamber. The interfacial structure includes a substantially non-metallic, thermally insulative mass of material interposed between the one processing chamber and the transfer chamber. The mass is of sufficient volume to effectively reduce heat transfer from the processing chamber to the transfer chamber than would otherwise occur in the absence of said mass of material. An interfacial structure includes a body having a substrate passageway extending therethrough. The passageway includes walls at least a portion of which are substantially metallic. The body includes material peripheral of the walls which is substantially non-metallic and thermally insulative. The substantially non-metallic material has mounting openings extending at least partially therein.

摘要翻译： 半导体衬底处理器包括衬底传送室和与之连接的多个衬底处理室。 在至少一个处理室和传送室之间接收界面结构。 界面结构包括插入在一个处理室和传送室之间的基本上非金属的绝热材料块。 质量足够的体积以有效地减少从处理室到传送室的传热比否则不存在所述材料块的情况。 界面结构包括具有延伸穿过其中的基底通道的主体。 该通道包括其至少一部分基本上是金属的壁。 主体包括基本上非金属和热绝缘的壁的材料周边。 基本上非金属材料具有其中至少部分延伸的安装开口。

公开(公告)号：US20050241581A1

公开(公告)日：2005-11-03

申请号：US11175523

申请日：2005-07-05

申请人： Craig Carpenter ,  Ross Dando ,  Philip Campbell ,  Allen Mardian ,  Jeff Fuss ,  Randy Mercil

发明人： Craig Carpenter ,  Ross Dando ,  Philip Campbell ,  Allen Mardian ,  Jeff Fuss ,  Randy Mercil

IPC分类号： C23C16/44 ,  C23C16/455 ,  C30B25/08 ,  C23C16/00

CPC分类号： C23C16/45544 ,  C30B25/08

摘要： A chemical vapor deposition (CVD) apparatus includes a deposition chamber defined partly by a chamber wall. The chamber wall has an innermost surface inside the chamber and an outermost surface outside the chamber. The apparatus further includes a valve body having a seat between the innermost and outermost surfaces of the chamber wall. The chamber wall can be a lid and the valve can include a portion of the lid as at least a part of the seat. The valve body can include at least a part of a valve housing between the innermost and outermost surfaces of the chamber wall. Such a valve body can even include a portion of the chamber wall as at least part of the valve housing. The deposition apparatus can further include at least a part of a process chemical inlet to the valve body between the innermost and outermost surfaces of the chamber wall. In one example, the chamber wall can form at least a part of the chemical inlet. A deposition method includes temporarily isolating a process chemical supply line from a deposition chamber at a chamber wall of the deposition chamber. While isolated at the chamber wall, the supply line can be filled to a first pressure with chemical through a supply valve upstream from the chamber wall. The chemical can be released from the supply line into the deposition chamber at the chamber wall. The supply line can be again temporarily isolated from the deposition chamber at the chamber wall.

摘要翻译： 化学气相沉积（CVD）装置包括由室壁部分地限定的沉积室。 室壁具有在腔室内的最内表面和室外的最外表面。 该装置还包括阀体，其具有在室壁的最内表面和最外表面之间的座。 室壁可以是盖子，并且阀门可以包括作为座椅的至少一部分的盖子的一部分。 阀体可以包括在室壁的最内表面和最外表面之间的阀壳的至少一部分。 这种阀体甚至可以包括作为阀壳体的至少一部分的室壁的一部分。 沉积设备还可以包括在室壁的最内表面和最外表面之间的阀体的至少一部分过程化学品入口。 在一个示例中，室壁可以形成化学品入口的至少一部分。 沉积方法包括将沉积室的沉积室临时隔离工艺化学品供应管线。 虽然在室壁处隔离，但是供应管线可以通过来自室壁上游的供应阀将化学物质填充到第一压力。 化学品可以从供应管线释放到室壁处的沉积室中。 供应管线可以再次临时从室壁处的沉积室隔离。

公开(公告)号：US20050078462A1

公开(公告)日：2005-04-14

申请号：US10683806

申请日：2003-10-10

申请人： Ross Dando ,  Dan Gealy ,  Craig Carpenter ,  Philip Campbell ,  Allen Mardian

发明人： Ross Dando ,  Dan Gealy ,  Craig Carpenter ,  Philip Campbell ,  Allen Mardian

IPC分类号： C23C16/48 ,  H01L21/314 ,  H01L29/78

CPC分类号： H01L21/02271 ,  C23C16/45523 ,  C23C16/483 ,  H01L21/0228 ,  H01L21/3141 ,  H01L29/78

摘要： Apparatus is provided for a method of forming a film on a substrate that includes activating a gas precursor to deposit a material on the substrate by irradiating the gas precursor with electromagnetic energy at a frequency tuned to an absorption frequency of the gas precursor. The electromagnetic energy can be provided by an array of lasers. The frequency of the laser beam is selected by switching from one laser in the array to another laser in the array. The laser array may include laser diodes, one or more tunable lasers, solid state lasers, or gas lasers. The frequency of the electromagnetic energy is selected to impart specific amounts of energy to a gas precursor at a specific frequency that provides point of use activation of the gas precursor.

摘要翻译： 提供了一种在衬底上形成膜的方法，该方法包括通过用调谐到气体前体的吸收频率的频率的电磁能照射气体前体来激活气体前体以将材料沉积在衬底上。 电磁能可由激光阵列提供。 通过从阵列中的一个激光器切换到阵列中的另一个激光器来选择激光束的频率。 激光器阵列可以包括激光二极管，一个或多个可调激光器，固态激光器或气体激光器。 选择电磁能量的频率以将特定量的能量以提供气体前体的使用激活的特定频率赋予气体前体。

公开(公告)号：US20060172087A1

公开(公告)日：2006-08-03

申请号：US11394988

申请日：2006-03-30

申请人： Cem Basceri ,  Irina Vasilyeva ,  Ammar Derraa ,  Philip Campbell ,  Gurtej Sandhu

发明人： Cem Basceri ,  Irina Vasilyeva ,  Ammar Derraa ,  Philip Campbell ,  Gurtej Sandhu

IPC分类号： C23C16/14

CPC分类号： H01L21/28518 ,  C23C16/42 ,  H01L21/28556

摘要： Chemical vapor deposition methods of forming titanium silicide including layers on substrates are disclosed. TiCl4 and at least one silane are first fed to the chamber at or above a first volumetric ratio of TiCl4 to silane for a first period of time. The ratio is sufficiently high to avoid measurable deposition of titanium silicide on the substrate. Alternately, no measurable silane is fed to the chamber for a first period of time. Regardless, after the first period, TiCl4 and at least one silane are fed to the chamber at or below a second volumetric ratio of TiCl4 to silane for a second period of time. If at least one silane was fed during the first period of time, the second volumetric ratio is lower than the first volumetric ratio. Regardless, the second feeding is effective to plasma enhance chemical vapor deposit a titanium silicide including layer on the substrate.

摘要翻译： 公开了在衬底上形成包括层的硅化钛的化学气相沉积方法。 TiCl 4 S和至少一种硅烷首先以等于或高于TiCl 4的第一体积比与硅烷一起进料到室中，持续第一段时间。 该比例足够高以避免钛硅化物在衬底上的可测量沉积。 或者，在第一时间段内没有可测量的硅烷进料到室中。 无论如何，在第一阶段之后，将TiCl 4 S和至少一种硅烷以等于或低于TiCl 4的第二体积比与硅烷一起进料到室中，持续第二阶段 时间。 如果在第一时间段内进料至少一种硅烷，则第二体积比率低于第一体积比。 无论如何，第二次进料对于等离子体有效地提高了化学气相沉积在基底上的包含硅的硅化钛。