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公开(公告)号：US4494303A
公开(公告)日：1985-01-22
申请号：US480825
申请日：1983-03-31
IPC分类号： H01L21/762 , H01L21/76
CPC分类号： H01L21/76297 , Y10S438/977
摘要： Structures useful for dielectrically isolated high voltage devices are produced utilizing a melting technique. In this technique a cavity is produced in a silicon wafer, the surface of the cavity is, for example, oxidized to form a dielectric material, and silicon is deposited onto the dielectric material so that it extends to a region where it is in contact with single crystal silicon, e.g., a portion of the wafer. The entire region of polycrystalline silicon is then melted. Upon termination of the melting energy, the polycrystalline silicon is converted into a thick region of dielectrically isolated single crystal silicon. This thick region is useful for the formation of high voltage devices.
摘要翻译： 使用熔化技术生产用于介电隔离的高压器件的结构。 在该技术中，在硅晶片中产生空腔，空腔的表面例如被氧化以形成介电材料，并且将硅沉积到电介质材料上，使得其延伸到与其接触的区域 单晶硅，例如晶片的一部分。 然后将多晶硅的整个区域熔化。 在熔化能量终止时，多晶硅转化为介电离子单晶硅的厚区域。 该厚区域可用于形成高压器件。
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公开(公告)号：US4461670A
公开(公告)日：1984-07-24
申请号：US374309
申请日：1982-05-03
IPC分类号： H01L21/20 , H01L21/268 , H01L21/762 , C30B1/08
CPC分类号： H01L21/2022 , H01L21/2686 , H01L21/76248 , Y10S148/091 , Y10S148/093
摘要： Dielectrically isolated regions of single crystal silicon are produced through the use of a specific melting process. In this process, a substrate having regions of single crystal silicon contacting regions of non-single crystal silicon that overlie a dielectric material are treated. In particular, the entire region(s) of non-single crystal silicon is melted utilizing primarily radiant energy. Cooling is then initiated and the molten silicon is converted into a region of single crystal material. Isolation is completed by removing the appropriate regions of single crystal silicon.
摘要翻译： 通过使用特定的熔融工艺制备单晶硅的绝缘隔离区域。 在该方法中，处理具有覆盖在电介质材料上的非单晶硅的单晶硅接触区域的基板。 特别地，非单晶硅的整个区域主要利用辐射能来熔化。 然后开始冷却，并将熔融的硅转化成单晶材料的区域。 通过去除单晶硅的适当区域来完成隔离。
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公开(公告)号：US4497683A
公开(公告)日：1985-02-05
申请号：US374308
申请日：1982-05-03
IPC分类号： C30B25/18 , H01L21/20 , H01L21/762 , C30B25/10 , B05D5/12
CPC分类号： C30B25/18 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/02639 , H01L21/76294 , Y10S117/905 , Y10S148/003 , Y10S148/09 , Y10S148/123
摘要： Dielectrically isolated semiconductor devices are producible through a relatively convenient fabrication procedure. In this fabrication procedure, a substrate having regions of single crystal silicon and regions of silicon oxide is employed. Such substrate is expeditiously produced by methods which leave the surface of the single crystal regions below those of the silicon oxide regions. Silicon is deposited by CVD onto the structure with its regions of silicon dioxide and single crystal silicon. Initially, the conditions of the CVD procedure are controlled so that epitaxial silicon grows on the regions of single crystal silicon but essentially no growth is induced on the silicon oxide regions. When the growth of the single crystal regions has proceeded sufficiently to produce a substantially planar structure, advantageously the deposition conditions are adjusted so that silicon is also deposited on the surface of the silicon oxide. The polycrystalline or amorphous silicon layer overlying regions of silicon oxide produced from this growth is then converted into single crystal silicon.
摘要翻译： 绝缘隔离的半导体器件可通过相对方便的制造工艺生产。 在该制造方法中，使用具有单晶硅区域和氧化硅区域的衬底。 通过使单晶区域的表面低于氧化硅区域的方法，快速地制造这种衬底。 通过CVD将硅沉积到具有二氧化硅和单晶硅的区域的结构上。 首先，控制CVD工艺的条件使得外延硅在单晶硅的区域上生长，但是在氧化硅区域上基本上不产生生长。 当单晶区域的生长充分进行以产生基本上平面的结构时，有利地调节沉积条件，使得硅也沉积在氧化硅的表面上。 然后将由该生长产生的覆盖氧化硅区域的多晶或非晶硅层转化为单晶硅。
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公开(公告)号：US5961877A
公开(公告)日：1999-10-05
申请号：US568112
申请日：1995-12-06
IPC分类号： B81B3/00 , B81C1/00 , C09K13/08 , H01L21/20 , H01L21/205 , H01L21/306 , H01L21/762 , H01L29/161 , C09K13/00
CPC分类号： H01L29/161 , C09K13/08 , H01L21/02381 , H01L21/0245 , H01L21/02529 , H01L21/02532 , H01L21/0262 , H01L21/30604 , H01L21/76251 , Y10S148/059 , Y10S148/15
摘要： Silicon-germanium-based compositions comprising silicon, germanium, and carbon (i.e., Si--Ge--C), methods for growing Si--Ge--C epitaxial layer(s) on a substrate, etchants especially suitable for Si--Ge--C etch-stops, and novel methods of use for Si--Ge--C compositions are provided. In particular, the invention relates to Si--Ge--C compositions, especially for use as etch-stops and related processes and etchants useful for microelectronic and nanotechnology fabrication.
摘要翻译： 包含硅，锗和碳的硅 - 锗基组合物（即Si-Ge-C），用于在衬底上生长Si-Ge-C外延层的方法，特别适用于Si-Ge-C蚀刻的蚀刻剂 并提供了Si-Ge-C组合物的新颖的使用方法。 特别地，本发明涉及Si-Ge-C组合物，特别是用作蚀刻停止剂和用于微电子和纳米技术制造的相关工艺和蚀刻剂。
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公开(公告)号：US5080549A
公开(公告)日：1992-01-14
申请号：US547463
申请日：1990-07-02
IPC分类号： B25J9/10 , B25J15/06 , H01L21/683
CPC分类号： B25J15/0616 , B25J9/107 , H01L21/6838 , Y10S414/139 , Y10S414/141
摘要： Wafer handling apparatus operating under the Bernoulli principle to pick up, transport and deposit wafers, which apparatus includes a plate having a plurality of laterally oriented outlets and a central outlet for discharging gas in a pattern sufficient to develop a low pressure enviroment to pick up the wafer while bathing the wafer in radially outflowing gases to prevent intrusion and deposition on the wafer of particulate matter in suspension.
摘要翻译： 在伯努利原理下操作的晶片处理设备用于拾取，运输和沉积晶片，该装置包括具有多个横向定向的出口的板，以及用于以足以形成低压环境的气体排出气体的中心出口 同时将晶片浸泡在径向流出的气体中，以防止在悬浮液中颗粒物质的晶片上的侵入和沉积。
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6.发明授权Method and apparatus for substrate heating in an axially symmetric epitaxial deposition apparatus 失效在轴向对称外延沉积设备中用于衬底加热的方法和装置
公开(公告)号：US4654509A
公开(公告)日：1987-03-31
申请号：US784739
申请日：1985-10-07
CPC分类号： C30B25/105
摘要： In an epitaxial deposition reactor with an axially symmetric gas flow carrying the deposition materials, apparatus and method for heating the substrate and associated susceptor uniformly is described. The apparatus includes at least one chamber having a plurality of heat lamps passing therethrough, the chamber being generally disposed symmetrically with respect to an axis of the substrate. The walls of the chamber are appropriately coated to reflect the light from the heat lamps and the outermost lamps can be energized to produce a higher temperature than the centrally located lamps to compensate for regions of the reactor that provide access to the substrate and therefore promote thermal losses. The spacing of the lamps can be varied also to compensate for thermal non-uniformity of the heating cavity. In a first embodiment, a lower chamber can be a chamber similar to the first chamber with the exception that the lamps are rotated 90.degree.. In a second embodiment, the lower chamber consists only of reflecting surfaces with no sources of heat generated therein. However, in this embodiment a portion of the lower chamber has a reflectivity different from the reflectivity of the remainder portion of the chamber. The substrate can be rotated to provide a further averaging of possible thermal structure. In a third embodiment, parabolic reflectors are associated with each lamp to provide greater uniformity in the radiation impinging on the substrate-susceptor combination. Chambers having heating lamps with both parabolic reflectors and with planar reflecting surfaces are also described.
摘要翻译： 在具有承载沉积材料的轴向对称气流的外延沉积反应器中，描述了均匀地加热衬底和相关联的基座的装置和方法。 该装置包括至少一个室，其具有穿过其中的多个加热灯，该室通常相对于基板的轴对称设置。 室的壁被适当地涂覆以反射来自加热灯的光，并且最外面的灯可以被激励以产生比中心位置的灯更高的温度，以补偿提供对基板的接近的反应器的区域，并且因此促进热 损失。 灯的间隔也可以改变以补偿加热腔的热不均匀性。 在第一实施例中，下室可以是类似于第一室的室，除了灯旋转90度。 在第二实施例中，下室仅由不产生热源的反射表面组成。 然而，在该实施例中，下室的一部分具有与腔室的其余部分的反射率不同的反射率。 可以旋转衬底以提供可能的热结构的进一步平均。 在第三实施例中，抛物面反射器与每个灯相关联，以在照射到衬底感受器组合上的辐射中提供更大的均匀性。 还描述了具有抛物面反射器和平面反射表面的加热灯的室。
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公开(公告)号：US6064081A
公开(公告)日：2000-05-16
申请号：US7526
申请日：1998-01-15
申请人： McDonald Robinson , Richard C. Westhoff , Charles E. Hunt , Li Ling , Ziv Atzmon
发明人： McDonald Robinson , Richard C. Westhoff , Charles E. Hunt , Li Ling , Ziv Atzmon
IPC分类号： B81B3/00 , B81C1/00 , C09K13/08 , H01L21/20 , H01L21/205 , H01L21/306 , H01L21/762 , H01L29/161 , H01L31/0312
CPC分类号： H01L29/161 , C09K13/08 , H01L21/02381 , H01L21/0245 , H01L21/02529 , H01L21/02532 , H01L21/0262 , H01L21/30604 , H01L21/76251 , Y10S148/059 , Y10S148/15
摘要： Silicon-germanium-based compositions comprising silicon, germanium, and carbon (i.e., Si--Ge--C), methods for growing Si--Ge--C epitaxial layer(s) on a substrate, etchants especially suitable for Si--Ge--C etch-stops, and novel methods of use for Si--Ge--C compositions are provided. In particular, the invention relates to Si--Ge--C compositions, especially for use as etch-stops and related processes and etchants useful for microelectronic and nanotechnology fabrication.
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8.发明授权Metalorganic deposition method for forming epitaxial thallium-based copper oxide superconducting films 失效用于形成外延铊基氧化铜超导薄膜的金属有机沉积方法
公开(公告)号：US5071830A
公开(公告)日：1991-12-10
申请号：US238919
申请日：1988-08-31
CPC分类号： H01L39/2448 , C23C14/087 , H01L39/143 , H01L39/2451 , H01P1/203 , Y10S428/93 , Y10S505/701 , Y10S505/702 , Y10S505/734 , Y10S505/735
摘要： An epitaxial thallium-based copper oxide superconducting film is formed on a crystalline substrate by metalorganic deposition which comprises forming a film of carboxylate soap solution on said substrate, prepyrolyzing said film at a temperature of 350.degree. C. or less and pyrolyzing said film at a temperature of 800.degree.900.degree. C. in the presence of oxygen and an overpressure of thallium for a sufficient time to produce said epitaxial superconducting film.
摘要翻译： 外延铊基氧化铜超导膜是通过金属有机沉积在晶体基底上形成的，其包括在所述基底上形成羧酸盐皂溶液膜，在350℃或更低的温度下预分解所述膜，并在 温度为800-900℃，在氧的存在下和铊的过压足够的时间以产生所述外延超导膜。
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公开(公告)号：US4828224A
公开(公告)日：1989-05-09
申请号：US108771
申请日：1987-10-15
申请人： Richard Crabb , McDonald Robinson , Mark R. Hawkins , Dennis L. Goodwin , Armand P. Ferro , Albert E. Ozias , Wiebe B. deBoer
发明人： Richard Crabb , McDonald Robinson , Mark R. Hawkins , Dennis L. Goodwin , Armand P. Ferro , Albert E. Ozias , Wiebe B. deBoer
CPC分类号： C30B29/06 , C30B25/10 , Y10S414/137 , Y10S414/139
摘要： This invention discloses a system for chemically depositing various materials carried by a reactant gas onto substrates for manufacturing semiconductor devices. The system includes special loading and unloading sub-system for placement of substrates to be processed into the system and subsequent extraction without contamination of the system. A special substrate handling sub-system is provided for moving the substrates to and from at least one processing sub-system without physically contacting the planar surfaces of the substrates. The processing sub-system includes a horizontal gas flow reaction chamber having a rotatable susceptor therein for rotating the single substrate supportable thereon about an axis that is normal to the center of the substrate for averaging of the temperature and reactant gas concentration variables. The processing sub-system is separated from the handling sub-system by a special isolation valve and a gas injection device is used to inject the gas into the reaction chamber with a predetermined velocity profile. A special temperature sensing arrangement is provided in the processing sub-system for controlling a radiant heating sub-system which is provided above and below the reaction chamber.
摘要翻译： 本发明公开了一种用于将由反应气体承载的各种材料化学沉积到用于制造半导体器件的衬底上的系统。 该系统包括专用的装载和卸载子系统，用于将要处理的基板放置在系统中，随后提取而不会污染系统。 提供了一种特殊的基板处理子系统，用于将基板移动到至少一个处理子系统并且从至少一个处理子系统移动，而不物理地接触基板的平面表面。 处理子系统包括水平气流反应室，其中具有可旋转的基座，用于使可支撑在其上的单个基板绕垂直于基板中心的轴线旋转，以平均温度和反应气体浓度变量。 处理子系统通过特殊隔离阀与处理子系统分离，并且气体注入装置用于以预定的速度分布将气体注入反应室。 在处理子系统中设置有用于控制设置在反应室上方和下方的辐射加热子系统的特殊温度检测装置。
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公开(公告)号：US5819684A
公开(公告)日：1998-10-13
申请号：US661461
申请日：1996-06-10
申请人： Mark R. Hawkins , McDonald Robinson
发明人： Mark R. Hawkins , McDonald Robinson
IPC分类号： C23C16/455 , C30B25/14 , C23C16/00
CPC分类号： C30B25/14 , C23C16/455
摘要： The present invention relates to improved injectors for use in CVD reactor systems, and more specifically for use in epitaxial deposition systems for processing a single wafer-at-a-time. The improved injectors of the present invention are used to provide a predetermined desired shaped velocity profile for the injected reactant gases for insuring a more uniform deposition on a single wafer to be processed within the reactor system. In the first embodiment, the reactant gas is fed into a horizontal gas distribution manifold cavity and distributed horizontally in both directions. The gas then passes through a manifold wall having a pattern of predetermined sized and spaced apertures therein. The size of the apertures and the distribution of these sizes, shapes the resultant velocity profile to a desired pattern. Since the volume flow rate through each aperture of the manifold member increases as the diameter of the aperture increases, the resultant velocity profile produced will have its maximum at the center where the largest apertures exist and its minimum at the sides where the smallest apertures exist and the velocity profile will have a desired predetermined shape as it exits the gas delivery chamber and is turned 90.degree. for injection into the input of the reaction chamber. In an alternate embodiment, a plurality of linearly dimensioned slots are provided between spacer legs for producing the predetermined desired shaped velocity profile.
摘要翻译： 本发明涉及用于CVD反应器系统的改进喷射器，更具体地涉及用于一次处理单个晶片的外延沉积系统。 本发明的改进的喷射器用于为注入的反应气体提供预定的期望的成形速度分布，以确保在反应器系统内待处理的单个晶片上更均匀的沉积。 在第一实施例中，反应气体被供给到水平气体分配歧管腔中，并且沿两个方向水平分布。 然后气体通过其中具有预定尺寸和间隔开的孔的图案的歧管壁。 孔的尺寸和这些尺寸的分布将合成的速度分布形成期望的图案。 由于通过歧管构件的每个孔口的体积流量随着孔径的增加而增加，所产生的合成速度分布将在存在最大孔径的中心处具有最大值，并且在存在最小孔隙的侧面处其最小值; 当离开气体输送室时，速度分布将具有期望的预定形状，并且转动90°以注入反应室的输入。 在替代实施例中，在间隔腿之间提供多个线性尺寸的狭槽，用于产生预定的所需成形速度分布。
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