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15 条记录 (耗时 0.016 秒)

    Herbicidal formulation
    1.
    发明授权
    Herbicidal formulation 失效
    除草配方

    公开(公告)号：US4612034A

    公开(公告)日：1986-09-16

    申请号：US554769

    申请日：1983-11-28

    申请人： Paul J. Kruger ,  George Schwartzkopf

    发明人： Paul J. Kruger ,  George Schwartzkopf

    IPC分类号： A01N59/24

    CPC分类号： A01N59/24

    摘要： An improved herbicidal formulation comprising a mixture of the isopropylamine salt of glyphosate and an effective potentiating amount of an ammonium, quaternary alkyl ammonium, alkali metal or alkaline earth metal thiocyanate.

    摘要翻译： 一种改进的除草剂，其包含草甘膦的异丙胺盐和有效增强量的铵，季烷基铵，碱金属或碱土金属硫氰酸盐的混合物。

    Cleaning wafer substrates of metal contamination while maintaining wafer smoothness
    2.
    发明授权
    Cleaning wafer substrates of metal contamination while maintaining wafer smoothness 失效
    清洁晶圆衬底的金属污染，同时保持晶圆平滑度

    公开(公告)号：US5989353A

    公开(公告)日：1999-11-23

    申请号：US729565

    申请日：1996-10-11

    申请人： David C. Skee ,  George Schwartzkopf

    发明人： David C. Skee ,  George Schwartzkopf

    IPC分类号： B08B3/04 ,  C11D7/26 ,  C11D7/32 ,  C11D7/50 ,  C11D11/00 ,  C03C23/00 ,  B08B7/00 ,  C11D9/00 ,  C11D17/00

    CPC分类号： C11D7/261 ,  C11D11/0047 ,  C11D7/268 ,  C11D7/3209 ,  C11D7/3218 ,  C11D7/5022

    摘要： Microelectronics wafer substrate surfaces are cleaned to remove metal contamination while maintaining wafer substrate surface smoothness by contacting the wafer substrate surfaces with an aqueous cleaning solution of an alkaline, metal ion-free base and a polyhydroxy compound containing from two to ten --OH groups and having the formula: ##STR1## wherein or in which --R--, --R.sup.1 --, --R.sup.2 -- and --R.sup.3 -- are alkylene radicals containing two to ten carbon atoms, x is a whole integer of from 1 to 4 and y is a whole integer of from 1 to 8, with the proviso that the number of carbon atoms in the polyhydroxy compound does not exceed ten, and wherein the water present in the aqueous cleaning solution is at least about 40% by weight of the cleaning composition.

    摘要翻译： 通过使晶片衬底表面与含有2至10个-OH基团的碱金属离子型碱和多羟基化合物的水性清洗溶液接触，并保持晶片衬底表面平滑度，并且具有 式中R 1，R 2，R 2和R 3 - 为含有2至10个碳原子的亚烷基，x为1至4的整数，y为整数， 1至8，条件是多羟基化合物中的碳原子数不超过10，并且其中存在于清洁水溶液中的水为清洁组合物的至少约40重量％。

    CONDITIONING COMPOSITIONS FOR SOLAR CELLS
    4.
    发明申请
    CONDITIONING COMPOSITIONS FOR SOLAR CELLS 审中-公开
    太阳能电池的调节组合物

    公开(公告)号：US20120187336A1

    公开(公告)日：2012-07-26

    申请号：US13354423

    申请日：2012-01-20

    申请人： Shahriar Naghshineh ,  Ewa Oldak ,  George Schwartzkopf

    发明人： Shahriar Naghshineh ,  Ewa Oldak ,  George Schwartzkopf

    IPC分类号： C09K13/02 ,  H01L31/18 ,  B08B3/08 ,  B08B3/12 ,  C11D7/60 ,  C09K13/00

    CPC分类号： C11D11/0047 ,  C11D7/06 ,  C11D7/3209 ,  H01L31/02363 ,  H01L31/18 ,  Y02E10/50

    摘要： Method of using improved compositions for conditioning silicon surfaces during the manufacture of photovoltaic devices. Used for removing particles, organic contamination, and unwanted metals from these surfaces. Also used for removing a thin layer of silicon as required for damage removal or texturing. These conditioning and surface preparation compositions comprise one or more water soluble strongly basic components capable of producing a pH greater than 10, one or more water soluble organic amines, one or more chelating agents, and water.

    摘要翻译： 在制造光伏器件期间使用改进的组合物调节硅表面的方法。 用于从这些表面去除颗粒，有机污染物和不需要的金属。 也用于去除薄层的硅，以防止损坏去除或纹理化。 这些调理和表面处理组合物包含一种或多种能够产生大于10的pH的水溶性强碱性组分，一种或多种水溶性有机胺，一种或多种螯合剂和水。

    CLEANING COMPOSITIONS WITH VERY LOW DIELECTRIC ETCH RATES
    5.
    发明申请
    CLEANING COMPOSITIONS WITH VERY LOW DIELECTRIC ETCH RATES 审中-公开
    清洁组合物具有非常低的介电蚀刻速率

    公开(公告)号：US20100018550A1

    公开(公告)日：2010-01-28

    申请号：US12505690

    申请日：2009-07-20

    申请人： George Schwartzkopf ,  Ewa Oldak ,  Shahriar Naghshineh

    发明人： George Schwartzkopf ,  Ewa Oldak ,  Shahriar Naghshineh

    IPC分类号： C23G1/00 ,  C11D3/60

    CPC分类号： C23G1/18 ,  C11D3/0073 ,  C11D7/10 ,  C11D7/265 ,  C11D7/3209 ,  C11D7/3218 ,  C11D11/0047 ,  H01L21/02063 ,  H01L21/02071 ,  H01L21/6704 ,  H01L21/67051 ,  H01L21/76814 ,  H01L21/76838

    摘要： Aqueous cleaning compositions comprising a tertiary organic amine, an organic acid, a non-metallic fluoride salt, a corrosion inhibitor, e.g., ascorbic acid or its derivatives alone or in combination, balance water, effective to remove plasma processing residues (sidewall polymer) which include metal-organic complexes and/or inorganic salts, oxides, hydroxides or complexes which form films or residues either alone or in combination with the organic polymer resins. These compositions clean effectively at low temperatures without etching metal or dielectric layers, including low-κ dielectric materials.

    摘要翻译： 包含叔有机胺，有机酸，非金属氟化物盐，腐蚀抑制剂（例如抗坏血酸或其衍生物单独或组合）的水性清洁组合物平衡水，有效去除等离子体处理残留物（侧壁聚合物），其中 包括单独或与有机聚合物树脂组合形成膜或残余物的金属 - 有机络合物和/或无机盐，氧化物，氢氧化物或络合物。 这些组合物在低温下有效地清洁，而不蚀刻包括低kappa介电材料的金属或电介质层。

    Deep UV photoresist with alkyl 2-diazo-1-ones as solubility modification agents
    8.
    发明授权
    Deep UV photoresist with alkyl 2-diazo-1-ones as solubility modification agents 失效
    具有2-重氮基-1-烷基的深UV光致抗蚀剂作为溶解度改性剂

    公开(公告)号：US4959293A

    公开(公告)日：1990-09-25

    申请号：US264335

    申请日：1988-10-28

    申请人： George Schwartzkopf ,  John B. Covington ,  Kathleen B. Gabriel

    发明人： George Schwartzkopf ,  John B. Covington ,  Kathleen B. Gabriel

    IPC分类号： G03F7/016 ,  G03F7/075

    CPC分类号： G03F7/0755 ,  G03F7/0163

    摘要： 2-diazo-1-ones are useful deep UV photoresist solubility modification agents exhibiting improved photosensitivity allowing shorter deep UV exposure times to achieve the same extent of photoreaction as with prior art solubility modification agents. The 2-diazo-1-one solubility modification agents when used as photoactive solubility modification components in photoresist compositions permit the photoresist compositions to act as either positive or negative photoresist compositions depending upon the developer employed, namely, as a positive resist when a metal ion containing developer is employed and as a negative resist when a metal ion free developer is employed.

    摘要翻译： 2-重氮-1-酮是有用的深UV光致抗蚀剂溶解度改进剂，其具有改善的光敏性，允许较短的深紫外线曝光时间，以达到与现有技术的溶解度改性剂相同程度的光反应。 当用作光致抗蚀剂组合物中的光活性溶解度改性组分时，2-重氮-1-一种溶解度改性剂允许光致抗蚀剂组合物作为正性或负性光致抗蚀剂组合物，取决于所用的显影剂，即当金属离子 当使用含金属离子的显影剂时，使用含氮显影剂和作为负性抗蚀剂。

    Photosensitive solubilization inhibition agents, and deep ultra-violet lithographic resist compositions
    9.
    发明授权
    Photosensitive solubilization inhibition agents, and deep ultra-violet lithographic resist compositions 失效
    光敏增溶抑制剂和深紫外光刻抗蚀剂组合物

    公开(公告)号：US4752551A

    公开(公告)日：1988-06-21

    申请号：US914473

    申请日：1986-10-02

    申请人： George Schwartzkopf

    发明人： George Schwartzkopf

    IPC分类号： G03C1/72 ,  C07F7/08 ,  G03F7/016 ,  G03C1/54 ,  G03C1/60 ,  C07C113/00

    CPC分类号： C07F7/0818 ,  G03F7/0163

    摘要： Photosensitive solubilization inhibitor compounds of the formula ##STR1## wherein: x is an integer equal to the valence or functionality of the radical R, andR is a radical selected from the group consisting of the residue of a mono-, di-, tri- or polyfunctional alkanol or silicon-containing alkanol and is attached to the oxy atom of the carboxyl group through a carbon atom.Positive deep ultra-violet photoresists which are base developable comprise base soluble polymers and the photosensitive solubilization inhibition agents. Lithographic resist images are formed with the deep ultra-violet photoresists upon exposure to deep ultra-violet light.