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公开(公告)号：US20140313816A1
公开(公告)日：2014-10-23
申请号：US14345295
申请日：2011-10-12
CPC分类号： H01L27/2463 , G11C13/0004 , G11C13/0007 , G11C13/0011 , G11C13/003 , G11C13/004 , G11C13/0069 , G11C2013/0045 , G11C2213/33 , G11C2213/72 , H01L29/88 , H01L45/16
摘要： The present disclosure provides a memory cell that includes a resistive memory element disposed between a first conductor and a second conductor, the first conductor and the second conductor configured to activate the resistive memory element. The memory cell also includes a backward diode disposed in series with the memory element between the memory element and either the first conductor or the second conductor.
摘要翻译： 本公开提供了一种存储单元，其包括设置在第一导体和第二导体之间的电阻性存储元件，第一导体和第二导体被配置为激活电阻式存储元件。 存储单元还包括与存储元件串联设置在存储元件与第一导体或第二导体之间的后向二极管。
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公开(公告)号：US09299746B2
公开(公告)日：2016-03-29
申请号：US14345295
申请日：2011-10-12
CPC分类号： H01L27/2463 , G11C13/0004 , G11C13/0007 , G11C13/0011 , G11C13/003 , G11C13/004 , G11C13/0069 , G11C2013/0045 , G11C2213/33 , G11C2213/72 , H01L29/88 , H01L45/16
摘要： The present disclosure provides a memory cell that includes a resistive memory element disposed between a first conductor and a second conductor, the first conductor and the second conductor configured to activate the resistive memory element. The memory cell also includes a backward diode disposed in series with the memory element between the memory element and either the first conductor or the second conductor.
摘要翻译： 本公开提供了一种存储单元，其包括设置在第一导体和第二导体之间的电阻性存储元件，第一导体和第二导体被配置为激活电阻式存储元件。 存储单元还包括与存储元件串联设置在存储元件与第一导体或第二导体之间的后向二极管。
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公开(公告)号：US08729518B2
公开(公告)日：2014-05-20
申请号：US13281186
申请日：2011-10-25
IPC分类号： H01L47/00
CPC分类号： H01L47/00 , H01L27/26 , H01L45/08 , H01L45/1233 , H01L45/145 , H01L45/146 , Y10T428/197 , Y10T428/24802 , Y10T428/24917 , Y10T428/24926
摘要： A multilayer structure is disclosed that includes a conductive layer, a layer of a negative differential resistance (NDR) material disposed above the conductive layer, a layer M2 disposed above the NDR material, a second layer of NDR material disposed above layer M2, and a conductive layer disposed above the second NDR layer. Layer M2 can include a conductive material interspersed with regions of a dielectric material or a layer of the dielectric material and regions of the conductive material disposed above and below the dielectric material.
摘要翻译： 公开了一种多层结构，其包括导电层，设置在导电层上方的负差动电阻（NDR）材料层，设置在NDR材料上方的层M2，设置在层M2上方的NDR材料的第二层，以及 导电层设置在第二NDR层之上。 层M2可以包括散布有电介质材料的区域或电介质材料层的导电材料和设置在电介质材料上方和下方的导电材料的区域。
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公开(公告)号：US09331700B2
公开(公告)日：2016-05-03
申请号：US14345594
申请日：2011-10-28
IPC分类号： G11C11/00 , G11C11/41 , H01L47/00 , H01L27/24 , H01L27/26 , H03K19/177 , G11C19/28 , H03K3/357 , H01L45/00 , H03K3/037 , H03K19/003 , G11C13/00
CPC分类号： G11C11/419 , G11C11/41 , G11C13/0007 , G11C19/28 , G11C2013/0073 , G11C2213/15 , G11C2213/32 , H01L45/04 , H01L45/1233 , H01L45/146 , H01L49/003 , H03K3/037 , H03K3/357 , H03K19/00315 , H03K19/1776
摘要： A metal-insulator phase transition (MIT) flip-flop employs a selected one of a pair of bi-stable operating states to represent a logic state of the MIT flip-flop. The MIT flip-flop includes an MIT device having a current-controlled negative differential resistance (CC-NDR) to provide the pair of bi-stable operating states. A bi-stable operating state of the pair is capable of being selected by a programing voltage. Once the bi-stable operating state is selected, the bi-stable operating state is capable of being maintained by a bias voltage applied to the MIT device.
摘要翻译： 金属 - 绝缘体相变（MIT）触发器采用一对双稳态工作状态中选择的一个来表示MIT触发器的逻辑状态。 MIT触发器包括具有电流控制的负差分电阻（CC-NDR）的MIT装置，以提供一对双稳态工作状态。 该对的双稳态工作状态能够通过编程电压进行选择。 一旦选择了双稳态操作状态，双稳态操作状态就能够通过施加到MIT设备的偏压来保持。
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公开(公告)号：US20140313818A1
公开(公告)日：2014-10-23
申请号：US14345594
申请日：2011-10-28
IPC分类号： H03K19/177 , G11C11/41 , H03K3/037
CPC分类号： G11C11/419 , G11C11/41 , G11C13/0007 , G11C19/28 , G11C2013/0073 , G11C2213/15 , G11C2213/32 , H01L45/04 , H01L45/1233 , H01L45/146 , H01L49/003 , H03K3/037 , H03K3/357 , H03K19/00315 , H03K19/1776
摘要： A metal-insulator phase transition (MIT) flip-flop employs a selected one of a pair of bi-stable operating states to represent a logic state of the MIT flip-flop. The MIT flip-flop includes an MIT device having a current-controlled negative differential resistance (CC-NDR) to provide the pair of bi-stable operating states. A bi-stable operating state of the pair is capable of being selected by a programing voltage. Once the bi-stable operating state is selected, the bi-stable operating state is capable of being maintained by a bias voltage applied to the MIT device.
摘要翻译： 金属 - 绝缘体相变（MIT）触发器采用一对双稳态工作状态中选择的一个来表示MIT触发器的逻辑状态。 MIT触发器包括具有电流控制的负差分电阻（CC-NDR）的MIT装置，以提供一对双稳态工作状态。 该对的双稳态工作状态能够通过编程电压进行选择。 一旦选择了双稳态操作状态，双稳态操作状态就能够通过施加到MIT设备的偏压来保持。
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公开(公告)号：US09846565B2
公开(公告)日：2017-12-19
申请号：US14349352
申请日：2011-10-27
CPC分类号： G06F5/08 , G11C7/1012 , G11C7/1036 , G11C19/00 , G11C19/28 , G11C21/00
摘要： Shiftable memory employs ring registers to shift a contiguous subset of data words stored in the ring registers within the shiftable memory. A shiftable memory includes a memory having built-in word-level shifting capability. The memory includes a plurality of ring registers to store data words. A contiguous subset of data words is shiftable between sets of the ring registers of the plurality from a first location to a second location within the memory. The contiguous subset of data words has a size that is smaller than a total size of the memory. The memory shifts only data words stored inside the contiguous subset when the contiguous subset is shifted.
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公开(公告)号：US08882217B2
公开(公告)日：2014-11-11
申请号：US13283197
申请日：2011-10-27
CPC分类号： B41J2/1753 , B41J2/17546 , B41J2/17559
摘要： A printhead assembly for a printing device is provided that includes a printhead comprising non-volatile memory elements. The memory elements include memristive elements. Each memristive element includes an active region disposed between two electrodes. The active region includes a switching layer formed of a switching material capable of carrying a species of dopants and a conductive layer in electrical contact with the switching layer, the conductive layer being formed of a dopant source material that includes the species of dopants that are capable of drifting into the switching layer under an applied potential.
摘要翻译： 提供了一种用于打印装置的打印头组件，其包括包括非易失性存储器元件的打印头。 存储元件包括忆阻元件。 每个忆阻元件包括设置在两个电极之间的有源区。 有源区包括由能够承载多种掺杂剂和与开关层电接触的导电层的开关材料形成的开关层，该导电层由掺杂剂源材料形成，掺杂剂源材料包括能够掺杂的掺杂剂的种类 在施加电位下漂移到开关层。
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公开(公告)号：US20130106930A1
公开(公告)日：2013-05-02
申请号：US13283197
申请日：2011-10-27
IPC分类号： B41J2/07
CPC分类号： B41J2/1753 , B41J2/17546 , B41J2/17559
摘要： A printhead assembly for a printing device is provided that includes a printhead comprising non-volatile memory elements. The memory elements include memristive elements. Each memristive element includes an active region disposed between two electrodes. The active region includes a switching layer formed of a switching material capable of carrying a species of dopants and a conductive layer in electrical contact with the switching layer, the conductive layer being formed of a dopant source material that includes the species of dopants that are capable of drifting into the switching layer under an applied potential.
摘要翻译： 提供了一种用于打印装置的打印头组件，其包括包括非易失性存储器元件的打印头。 存储元件包括忆阻元件。 每个忆阻元件包括设置在两个电极之间的有源区。 有源区包括由能够承载多种掺杂剂和与开关层电接触的导电层的开关材料形成的开关层，该导电层由掺杂剂源材料形成，掺杂剂源材料包括能够掺杂的掺杂剂的种类 在施加电位下漂移到开关层。
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公开(公告)号：US20140304467A1
公开(公告)日：2014-10-09
申请号：US14349352
申请日：2011-10-27
CPC分类号： G06F5/08 , G11C7/1012 , G11C7/1036 , G11C19/00 , G11C19/28 , G11C21/00
摘要： Shiftable memory employs ring registers to shift a contiguous subset of data words stored in the ring registers within the shiftable memory. A shiftable memory includes a memory having built-in word-level shifting capability. The memory includes a plurality of ring registers to store data words. A contiguous subset of data words is shiftable between sets of the ring registers of the plurality from a first location to a second location within the memory. The contiguous subset of data words has a size that is smaller than a total size of the memory. The memory shifts only data words stored inside the contiguous subset when the contiguous subset is shifted.
摘要翻译： 可移动存储器使用振铃寄存器来移位存储在可移位存储器内的环形寄存器中的数据字的连续子集。 可移位存储器包括具有内置字级移位能力的存储器。 存储器包括多个用于存储数据字的环形寄存器。 数据字的连续子集可在存储器内的第一位置到第二位置的多个环形寄存器的集合之间移位。 数据字的连续子集具有小于存储器总大小的大小。 当连续子集移位时，存储器仅移动存储在连续子集内的数据字。
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10.发明申请公开(公告)号：US20130099187A1
公开(公告)日：2013-04-25
申请号：US13281186
申请日：2011-10-25
CPC分类号： H01L47/00 , H01L27/26 , H01L45/08 , H01L45/1233 , H01L45/145 , H01L45/146 , Y10T428/197 , Y10T428/24802 , Y10T428/24917 , Y10T428/24926
摘要： A multilayer structure is disclosed that includes a conductive layer, a layer of a negative differential resistance (NDR) material disposed above the conductive layer, a layer M2 disposed above the NDR material, a second layer of NDR material disposed above layer M2, and a conductive layer disposed above the second NDR layer. Layer M2 can include a conductive material interspersed with regions of a dielectric material or a layer of the dielectric material and regions of the conductive material disposed above and below the dielectric material.
摘要翻译： 公开了一种多层结构，其包括导电层，设置在导电层上方的负差动电阻（NDR）材料层，设置在NDR材料上方的层M2，设置在层M2上方的NDR材料的第二层，以及 导电层设置在第二NDR层之上。 层M2可以包括散布有电介质材料的区域或电介质材料层的导电材料和设置在电介质材料上方和下方的导电材料的区域。
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