摘要:
A hybrid HardWire device is provided that comprises a gate array core and a set of mask programmable I/O cells having I/O characteristics similar to those of an FPGA, i.e., sufficiently the same so the HardWire device can be used as a drop-in replacement for the FPGA with no redesign of the original system. Using this HardWire device, a user's design originally implemented in an FPGA can be emulated in the HardWire device, which then replaces the FPGA in the same board at a lower cost. In another embodiment, the I/O cells are mask programmable such that they can emulate the I/O characteristics of FPGAs from any of two or more FPGA families. This ability reduces the number of separate HardWire devices that must be designed, manufactured, tested, stored, and sold, and also simplifies the software required to convert designs to the new device. Some embodiments of the invention can also emulate other programmable devices such as PLDs.
摘要:
A method of implementing a boundary scan chain is provided using a programmable IC that includes dedicated boundary scan logic having a programmable boundary scan bit-order. Boundary scan cells are provided, each cell being capable of providing the boundary scan functions associated with one I/O pad. In a mask programmable device, dedicated tracks are provided for adding mask programmable interconnect lines. In other programmable ICs such as FPGAs or PLDs, programmable interconnect lines are provided. In either case, the interconnect lines are used to implement the boundary scan data chain. Using these lines, the programmed device can "swap the order" of I/O cells in the boundary scan data chain, or leave cells out of the chain entirely. In one embodiment, the interconnect lines traverse each cell, programmably connecting the data inputs and outputs of adjacent or non-adjacent boundary scan cells. In other embodiments, the interconnect lines are physically located outside the boundary scan cells, either in a ring between the cell and the core or in the core itself.
摘要:
A hybrid HardWire device is provided that comprises a gate array core and a set of mask programmable I/O cells having I/O characteristics similar to those of an FPGA, i.e., sufficiently the same so the HardWire device can be used as a drop-in replacement for the FPGA with no redesign of the original system. Using this HardWire device, a user's design originally implemented in an FPGA can be emulated in the HardWire device, which then replaces the FPGA in the same board at a lower cost. In another embodiment, the I/O cells are mask programmable such that they can emulate the I/O characteristics of FPGAs from any of two or more FPGA families. This ability reduces the number of separate HardWire devices that must be designed, manufactured, tested, stored, and sold, and also simplifies the software required to convert designs to the new device. Some embodiments of the invention can also emulate other programmable devices such as PLDs.
摘要:
A programmable IC is provided that includes dedicated boundary scan logic having a programmable boundary scan bit-order. Boundary scan cells are provided, each cell being capable of providing the boundary scan functions associated with one I/O pad. In a mask programmable device, dedicated tracks are provided for adding mask programmable interconnect lines. In other programmable ICs such as FPGAs or PLDs, programmable interconnect lines are provided. In either case, the interconnect lines are used to implement the boundary scan data chain. Using these lines, the programmed device can "swap the order" of I/O cells in the boundary scan data chain, or leave cells out of the chain entirely. In one embodiment, the interconnect lines traverse each cell, programmably connecting the data inputs and outputs of adjacent or non-adjacent boundary scan cells. In other embodiments, the interconnect lines are physically located outside the boundary scan cells, either in a ring between the cell and the core or in the core itself.
摘要:
A memory array has a first memory cell with a plurality of transistors connected so as to restore a data value to a node of the memory cell to an initial value following an event upsetting the initial value. A first portion of the plurality of transistors is in a first cell portion and a second portion of the plurality of transistors is in a second cell portion. A second memory cell has a third cell portion and a fourth cell portion. The third cell portion is between the first cell portion and the second cell portion and adjacent to each of the first cell portion and the second cell portion. In a particular embodiment, the memory cell is a single-event-upset (“SEU”) tolerant memory cell and the first and second cell portions are each a half cell of a sixteen transistor memory cell.
摘要:
A method of providing a family of integrated circuits (ICs) includes applying a first product selection code (PSC) to a first IC die, applying a second PSC to a second IC die, and providing a third packaged IC die. The first IC die includes first and second portions, both of which are operational based on the first PSC. The second IC die is a duplicate of the first die, but the second portion is rendered non-operational by the second PSC. The third IC die is substantially similar to the first portion of the first die. The second and third packages can be the same and the packaged dies can be interchangeable in a system. When the dies are programmable logic device (PLD) dies, the second and third dies use the same configuration bit stream, which may be smaller than the configuration bit stream for the first IC die.
摘要:
A delay line for a digital clock manager includes a tap delay structure and a trim delay structure. The trim delay structure includes a first buffer coupled to receive a clock signal from the tap delay structure, and in response, provide a delayed clock signal to a set of clock lines. The trim delay structure also includes a capacitive trim unit having a plurality of capacitive trim elements tapped off the set of clock lines. The capacitive trim elements are selectively enabled or disabled, thereby introducing additional delay to the delayed clock signal on the set of clock lines. Each capacitive trim element can include a transmission gate structure, which is turned on to introduce significant junction capacitance to the set of clock lines. The trim delay structure can also include a second buffer adapted to buffer the delayed clock signal on the set of clock lines.
摘要:
It is sometimes desirable to protect a design used in a PLD from being copied. If the design is stored in a different device from the PLD and read into the PLD through a bitstream, the design may be encrypted as it is read into the PLD and decrypted within the PLD before being loaded into configuration memory cells for configuring the PLD. According to the invention, in such a device, a method is provided to prevent the design from being read back from the PLD in its decrypted state if it had been encrypted when loaded into the PLD.
摘要:
A RAM block includes a circuit for causing the RAM to provide a reset value on the output or a previously captured output value from the RAM when a Reset signal is active. The Reset signal does not change the RAM contents but causes all outputs of the block RAM to be either a reset value or a capture value, as selected by the user. This is useful when the RAM block is configured as a state machine. Thus, in an FPGA or other programmable device, an application can start the state machine in a known state with all address bits equal to 0 and can reset the state machine to this startup state. When the reset signal is active, the state machine can feed back the reset value or capture value to the address inputs of the RAM block that receive state feedback data, regardless of the data actually in those locations.
摘要:
An eFuse sensing circuit replaces the inverters used to provide the “read” output state of a conventional eFuse circuit. The sensing circuit includes a comparator with one input coupled to the eFuse circuitry, and a second input coupled to a reference voltage generator circuit. The reference voltage generator circuit includes an internal resistor. Transistors of the sense circuit are provided to mimic the transistors of the eFuse circuit, so that variations of transistors due to process, voltage and temperature will be substantially the same. The resistor of the sense circuit is then effectively compared with the resistance of the eFuse by the comparator irrespective of temperature and process variations.