公开(公告)号：US08465587B2

公开(公告)日：2013-06-18

申请号：US12649937

申请日：2009-12-30

申请人： Glenn S. Solomon ,  David J. Miller

发明人： Glenn S. Solomon ,  David J. Miller

IPC分类号： C30B21/02

CPC分类号： C30B29/406 ,  C30B25/08 ,  C30B25/10

摘要： Hydride vapor-phase deposition (HVPE) systems are disclosed. An HVPE hydride vapor-phase deposition system may include a reactant source chamber and a growth chamber containing a susceptor coupled to the reactant source chamber. The reactant source chamber may be configured to create a reactant gas through a chemical reaction between a solid or liquid precursor and a different precursor gas. The reactant source chamber can be configured to operate at a temperature T(M) significantly above room temperature. The reactant gas can be chemically unstable at or near room temperature. The susceptor is configured to receive a substrate and maintain the substrate at a substrate temperature T(S). The growth chamber includes walls can be configured to operate at a temperature T(C) such that T(M), T(S) are greater than T(C).

摘要翻译： 公开了氢化物气相沉积（HVPE）系统。 HVPE氢化物气相沉积系统可以包括反应物源室和包含耦合到反应物源室的基座的生长室。 反应物源室可经配置以通过固体或液体前体与不同前体气体之间的化学反应产生反应气体。 反应物源室可以被配置为在明显高于室温的温度T（M）下操作。 反应物气体在室温或室温下可能化学不稳定。 基座构造成接收基板并将基板保持在基板温度T（S）。 生长室包括壁可被配置成在温度T（℃）下操作使得T（M），T（S）大于T（℃）。

公开(公告)号：US6117213A

公开(公告)日：2000-09-12

申请号：US307292

申请日：1999-05-07

申请人： Tetsuzo Ueda ,  Glenn S. Solomon ,  David J. Miller

发明人： Tetsuzo Ueda ,  Glenn S. Solomon ,  David J. Miller

IPC分类号： B01D46/00 ,  B01D46/42

CPC分类号： B01D46/4263 ,  B01D46/10 ,  Y10S438/905

摘要： A method for removing particulate matter from an exhaust stream, in which the exhaust stream is passed through a particle trap assembly. The trap assembly includes a particle trap having a trap inlet, a filter region located downstream from the trap inlet, and an upstream portion located upstream from the filter region. The cross-sectional area of the upstream portion is preferably at least as great as the cross-sectional area of the filter region. The particle trap may be operably coupled directly to a source of an exhaust stream via a connector unit. The trap assembly may include a heating unit for heating at least a portion of the trap assembly, and a bellows-like connector unit.

摘要翻译： 一种从废气流中除去颗粒物质的方法，其中废气流通过颗粒捕集器组件。 捕集器组件包括具有捕集器入口，位于捕集器入口下游的过滤器区域和位于过滤器区域上游的上游部分的颗粒捕集器。 上游部分的横截面积优选至少与过滤器区域的横截面面积一样大。 颗粒捕集器可以通过连接器单元可操作地连接到排气流的源。 捕集器组件可以包括用于加热捕集器组件的至少一部分的加热单元和波纹管状连接器单元。

公开(公告)号：US20110155049A1

公开(公告)日：2011-06-30

申请号：US12649937

申请日：2009-12-30

申请人： Glenn S. Solomon ,  David J. Miller

发明人： Glenn S. Solomon ,  David J. Miller

IPC分类号： C30B25/10 ,  C30B25/08 ,  C30B25/14

CPC分类号： C30B29/406 ,  C30B25/08 ,  C30B25/10

摘要： Hydride vapor-phase deposition (HVPE) systems are disclosed. An HVPE hydride vapor-phase deposition system may include a reactant source chamber and a growth chamber containing a susceptor coupled to the reactant source chamber. The reactant source chamber may be configured to create a reactant gas through a chemical reaction between a solid or liquid precursor and a different precursor gas. The reactant source chamber can be configured to operate at a temperature T(M) significantly above room temperature. The reactant gas can be chemically unstable at or near room temperature. The susceptor is configured to receive a substrate and maintain the substrate at a substrate temperature T(S). The growth chamber includes walls can be configured to operate at a temperature T(C) such that T(M), T(S) are greater than T(C).

摘要翻译： 公开了氢化物气相沉积（HVPE）系统。 HVPE氢化物气相沉积系统可以包括反应物源室和包含耦合到反应物源室的基座的生长室。 反应物源室可经配置以通过固体或液体前体与不同前体气体之间的化学反应产生反应气体。 反应物源室可以被配置为在明显高于室温的温度T（M）下操作。 反应物气体在室温或室温下可能化学不稳定。 基座构造成接收基板并将基板保持在基板温度T（S）。 生长室包括壁可被配置成在温度T（℃）下操作使得T（M），T（S）大于T（℃）。

公开(公告)号：US06498113B1

公开(公告)日：2002-12-24

申请号：US09874939

申请日：2001-06-04

申请人： Glenn S. Solomon ,  David J. Miller

发明人： Glenn S. Solomon ,  David J. Miller

IPC分类号： H01L2131

CPC分类号： C30B23/02 ,  C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  C30B29/60 ,  C30B29/64 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02664 ,  H01L21/02694 ,  H01L21/268

摘要： A method for the production of crack-free Group III-Nitride layers is disclosed. The method proceeds by growing a crack-free first layer of Group III-Nitride on a starting substrate. A partial to complete loss of coherency is then achieved between a lattice of the first layer and a lattice of the starting substrate. A second layer is grown to form a composite layer that includes the first layer and the second layer such that the first layer is between the second layer and the substrate. The starting substrate may then be completely separated from the composite layer to produce the freestanding crack-free Group III-Nitride layer.

摘要翻译： 公开了生产无裂纹III-III族氮化物层的方法。 该方法通过在起始衬底上生长III-氮化物的无裂纹第一层而进行。 然后在第一层的晶格和起始衬底的晶格之间实现部分完全相干性的损失。 生长第二层以形成包括第一层和第二层的复合层，使得第一层位于第二层和衬底之间。 然后可以将起始衬底与复合层完全分离，以产生独立的无裂纹III-III族氮化物层。

公开(公告)号：US06176925B1

公开(公告)日：2001-01-23

申请号：US09307154

申请日：1999-05-07

申请人： Glenn S. Solomon ,  David J. Miller ,  Tetsuzo Ueda

发明人： Glenn S. Solomon ,  David J. Miller ,  Tetsuzo Ueda

IPC分类号： C30B2502

CPC分类号： C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/0254 ,  H01L21/02614 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/0079 ,  Y10S117/915

摘要： An n-doped, high quality gallium nitride substrate suitable for further device or epitaxial processing, and method for making the same. The nitride substrate is produced by epitaxial deposition of first metal nitride layer on a non-native substrate followed by a second deposition of metal nitride. During the second deposition of metal nitride, a liquid metal layer is formed at the interface of the non-native substrate and the metal nitride layer form. The formed metal nitride layer may be detached from the non-native substrate to provide an metal nitride substrate with a high quality inverse surface. A epitaxial metal nitride layer may be deposited on the inverse surface of metal nitride substrate. The metal nitride substrate and the epitaxial metal nitride layer thereon may be deposited using the same hydride vapor-phase epitaxy system.

摘要翻译： 适合进一步的器件或外延处理的n掺杂的高品质氮化镓衬底及其制造方法。 氮化物衬底通过在非天然衬底上外延沉积第一金属氮化物层，然后第二次沉积金属氮化物来制造。 在金属氮化物的第二沉积期间，在非天然衬底和金属氮化物层形式的界面处形成液态金属层。 形成的金属氮化物层可以从非天然衬底分离，以提供具有高质量反面的金属氮化物衬底。 可以在金属氮化物衬底的反面上沉积外延金属氮化物层。 可以使用相同的氢化物气相外延系统沉积金属氮化物衬底及其上的外延金属氮化物层。

公开(公告)号：US06768135B2

公开(公告)日：2004-07-27

申请号：US10023910

申请日：2001-12-18

申请人： Glenn S. Solomon ,  David J. Miller ,  Tetsuzo Ueda

发明人： Glenn S. Solomon ,  David J. Miller ,  Tetsuzo Ueda

IPC分类号： H01L3300

CPC分类号： H01L21/0262 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/0254 ,  Y10T428/12493 ,  Y10T428/12528 ,  Y10T428/12576

摘要： A method for forming an epitaxial layer involves depositing a buffer layer on a substrate by a first deposition process, followed by deposition of an epitaxial layer by a second deposition process. By using such a dual process, the first and second deposition processes can be optimized, with respect to performance, growth rate, and cost, for different materials of each layer. A semiconductor heterostructure prepared by a dual deposition process includes a buffer layer formed on a substrate by MOCVD, and an epitaxial layer formed on the buffer layer, the epitaxial layer deposited by hydride vapor-phase deposition.

摘要翻译： 用于形成外延层的方法包括通过第一沉积工艺在衬底上沉积缓冲层，随后通过第二沉积工艺沉积外延层。 通过使用这种双重过程，可以针对每个层的不同材料，针对性能，生长速率和成本优化第一和第二沉积工艺。 通过双沉积工艺制备的半导体异质结构包括通过MOCVD在衬底上形成的缓冲层和形成在缓冲层上的外延层，通过氢化物气相沉积沉积外延层。

公开(公告)号：US06355107B1

公开(公告)日：2002-03-12

申请号：US09675313

申请日：2000-09-29

申请人： Glenn S. Solomon ,  David J. Miller ,  Tetsuzo Ueda

发明人： Glenn S. Solomon ,  David J. Miller ,  Tetsuzo Ueda

IPC分类号： C23C1400

CPC分类号： C23C16/45519 ,  C23C16/303 ,  C23C16/4405 ,  C23C16/45576 ,  C30B25/02 ,  C30B25/14 ,  C30B29/403 ,  C30B29/406

摘要： A reaction assembly of a vapor-phase deposition system includes a reaction chamber leading to a gullet outlet, and a sheath leading to a sheath outlet. The gullet outlet and the sheath outlet at the distal end of the reaction assembly, the distal end including a compound nozzle. The reaction assembly generates a compound gas stream for projection from the compound nozzle towards a target substrate. The compound gas stream includes a reagent gas stream and a sheath gas stream, wherein the sheath gas stream at least partially envelopes the reagent gas stream. Methods for generating and delivering a compound gas stream, and for performing vapor-phase deposition, are also disclosed.

摘要翻译： 气相沉积系统的反应组件包括通向齿槽出口的反应室和通向鞘出口的鞘。 在反应组件的远端处的齿槽出口和鞘出口，远端包括复合喷嘴。 反应组件产生用于从复合喷嘴朝向目标基底突出的复合气流。 复合气流包括反应气流和鞘气流，其中鞘气流至少部分地包围反应气流。 还公开了用于产生和输送复合气流并进行气相沉积的方法。

公开(公告)号：US06190629B1

公开(公告)日：2001-02-20

申请号：US09293443

申请日：1999-04-16

申请人： Glenn S. Solomon ,  David J. Miller ,  Tetsuzo Ueda

发明人： Glenn S. Solomon ,  David J. Miller ,  Tetsuzo Ueda

IPC分类号： C01C112

CPC分类号： B01D53/18 ,  B01D53/14 ,  B01D53/1493 ,  B01D2251/70 ,  C23C16/4412 ,  Y02C20/30

摘要： A scrubber assembly for removal of water soluble and/or alkaline gases from an exhaust stream uses a scrubber mixture contained within at least one scrubber vessel. Preferably the scrubber mixture include a liquid phase including an aqueous acid solution, and solid phase including a solid organic acid. Preferably, the scrubber mixture includes a solid carboxylic acid having low toxicity and low corrosiveness to system components. In one embodiment, a plurality of scrubber vessels, each containing the scrubber mixture are connected in series. The scrubber assembly may further include an indicator tank containing an indicator mixture. The pH of the scrubber mixture and/or indicator mixture may be monitored, thereby making operation of the system not only simpler and more reliable, but also more efficient. A method for removal of water soluble and/or alkaline gases from an exhaust stream is also disclosed.

摘要翻译： 用于从排气流中除去水溶性和/或碱性气体的洗涤器组件使用包含在至少一个洗涤器容器内的洗涤器混合物。 优选地，洗涤器混合物包括含有酸水溶液的液相和包含固体有机酸的固相。 优选地，洗涤器混合物包括对系统组分具有低毒性和低腐蚀性的固体羧酸。 在一个实施例中，每个含有洗涤器混合物的洗涤器容器串联连接。 洗涤器组件还可以包括含有指示剂混合物的指示器罐。 可以监测洗涤器混合物和/或指示剂混合物的pH，从而使系统的操作不仅更简单和更可靠，而且更有效。 还公开了一种从废气流中除去水溶性和/或碱性气体的方法。

公开(公告)号：US06676751B2

公开(公告)日：2004-01-13

申请号：US09904464

申请日：2001-07-12

申请人： Glenn S. Solomon ,  David J. Miller ,  Tetsuzo Ueda

发明人： Glenn S. Solomon ,  David J. Miller ,  Tetsuzo Ueda

IPC分类号： C30B2814

CPC分类号： C30B25/10 ,  C23C16/4405 ,  C30B29/40 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262

摘要： An epitaxial film of a III-V compound may be formed on a non-native substrate by sequentially forming a plurality of epitaxial layers on the substrate at a growth temperature. By cooling the substrate and each sequentially grown epitaxial layer to a sub-growth temperature prior to resumption of epitaxial growth, stress within the sample (due to thermal mismatch between the substrate and the epitaxial layer) is periodically relieved. Sequential epitaxial growth is combined with system etching to provide an epitaxial layer which not only has a lower propensity to shatter, but also exhibits improved surface morphology. Sequential hydride vapor-phase epitaxy using HCl as both source gas and etchant, allows integration of sequential deposition and system etching into a single process.

摘要翻译： 可以在非天然衬底上通过在生长温度下在衬底上依次形成多个外延层来形成III-V族化合物的外延膜。 通过在恢复外延生长之前将衬底和每个顺序生长的外延层冷却到次生长温度，周期性地释放样品内的应力（由于衬底和外延层之间的热失配）。 顺序外延生长与系统蚀刻相结合以提供外延层，其不仅具有较低的粉碎倾向，而且表现出改进的表面形态。 使用HCl作为源气体和蚀刻剂的顺序氢化物气相外延允许将顺序沉积和系统蚀刻集成到单个工艺中。

公开(公告)号：US06673149B1

公开(公告)日：2004-01-06

申请号：US09656305

申请日：2000-09-06

申请人： Glenn S. Solomon ,  David J. Miller ,  Tetsuzo Ueda

发明人： Glenn S. Solomon ,  David J. Miller ,  Tetsuzo Ueda

IPC分类号： C30B2518

CPC分类号： C30B23/02 ,  C30B25/02 ,  C30B25/18 ,  C30B29/403 ,  C30B29/406 ,  Y10S117/915

摘要： A method for the production of a crack-free epitiaxial film having a thickness greater than that which can be achieved by continuous epitaxial crystal growth. This epitaxial film can be used as is in a device, used as a substrate platform for further epitaxy, or separated from the initial substrate material and used as a free-standing substrate platform. The method utilizes a defect-rich initial layer that absorbs epitaxially derived stresses and another layer, which is not defect-rich, which planarizes the crystal growth front, if necessary and provides high quality epitaxial region near the surface.

摘要翻译： 一种生产具有大于可通过连续外延晶体生长实现的厚度的无裂纹的双轴向膜的方法。 该外延膜可以原样使用在用作进一步外延的衬底平台或与初始衬底材料分离并用作独立衬底平台的器件中。 该方法利用了富含外延衍生应力的富含缺陷的初始层和不富含缺陷的另一层，如果需要，可平面化晶体生长前沿，并在表面附近提供高质量的外延区域。