公开(公告)号：US4956314A

公开(公告)日：1990-09-11

申请号：US357844

申请日：1989-05-30

申请人： Gordon Tam ,  Ronald N. Legge ,  Wayne M. Paulson

发明人： Gordon Tam ,  Ronald N. Legge ,  Wayne M. Paulson

IPC分类号： H01L21/302 ,  H01L21/285 ,  H01L21/306 ,  H01L21/311 ,  H01L21/3115 ,  H01L21/338

CPC分类号： H01L29/66871 ,  H01L21/28587 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31155

摘要： A method for differentially etching silicon nitride, preferably formed in a hydrogen free environment, wherein hydrogen is implanted into various regions of the silicon nitride. The silicon nitride may then be etched by a number of different etchants, some of which will etch the implanted regions appreciably faster and others which will etch the non-implanted regions more quickly. This method is especially useful in the fabrication of self-aligned gate devices.

摘要翻译： 用于差异蚀刻氮化硅的方法，优选在无氢环境中形成，其中将氢注入到氮化硅的各个区域中。 氮化硅然后可以被许多不同的蚀刻剂蚀刻，其中一些蚀刻剂将蚀刻蚀刻注入区域的速度更快，而其它蚀刻剂将更快地蚀刻非注入区域。 该方法在自对准栅极器件的制造中特别有用。

公开(公告)号：US4857481A

公开(公告)日：1989-08-15

申请号：US322943

申请日：1989-03-14

申请人： Gordon Tam ,  Lisa R. Granick

发明人： Gordon Tam ,  Lisa R. Granick

IPC分类号： H01L21/306 ,  H01L21/28 ,  H01L21/338 ,  H01L21/768 ,  H01L29/812

CPC分类号： H01L21/7688 ,  H01L21/7682 ,  H01L21/76885

摘要： An improved method of fabricating airbridge metal interconnects uses two photoresist layers having different solubility characteristics. This allows for the removal of one resist without affecting the other. Thus, the underlying semiconductor structure is protected from subsequent etches of the ground plane metal. Consequently, a greater process latitude allows for obtaining higher device yields in fabricating high frequency semiconductor devices employing airbridge metal interconnects.

摘要翻译： 制造气桥金属互连的改进方法使用具有不同溶解度特性的两个光致抗蚀剂层。 这允许去除一个抗蚀剂而不影响另一个抗蚀剂。 因此，保护​​下面的半导体结构免受接地平面金属的后续蚀刻。 因此，更大的工艺纬度允许在制造使用空中桥接金属互连的高频半导体器件中获得更高的器件产量。

公开(公告)号：US20060114085A1

公开(公告)日：2006-06-01

申请号：US11151704

申请日：2005-06-14

申请人： Rimantas Vaitkus ,  Jun Shen ,  Charles Wheeler ,  Meichun Ruan ,  Gordon Tam

发明人： Rimantas Vaitkus ,  Jun Shen ,  Charles Wheeler ,  Meichun Ruan ,  Gordon Tam

IPC分类号： H01H51/22

CPC分类号： H01H50/005 ,  H01H2050/007

摘要： A system and method are used to route input signals from an input node to N output nodes. The system includes an input section that receives input signals, an output section that transmits output signals based on the input signals, and a switching section. The switching section includes switches that control transmission of the input signals from the input section to the output section. The switches can be latching micro-magnetic switches that include a magnet proximate to a substrate, a cantilever coupled to the substrate and positioned proximate to the magnet, the cantilever coupled to a magnetic material, and a conductor coupled to the substrate, the conductor conducting a current that induces a first torque in the cantilever.

摘要翻译： 使用系统和方法将输入信号从输入节点路由到N个输出节点。 该系统包括接收输入信号的输入部分，基于输入信号发送输出信号的输出部分和切换部分。 切换部分包括控制从输入部分到输出部分的输入信号的传输的开关。 开关可以是闭锁微型磁开关，其包括靠近基板的磁体，耦合到基板并且靠近磁体定位的悬臂，耦合到磁性材料的悬臂和耦合到基板的导体，导体导电 在悬臂中引起第一转矩的电流。

公开(公告)号：US07300815B2

公开(公告)日：2007-11-27

申请号：US11113344

申请日：2005-04-25

申请人： Gordon Tam ,  Jun Shen

发明人： Gordon Tam ,  Jun Shen

IPC分类号： H01L21/441

CPC分类号： H01H50/005 ,  H01H2050/007

摘要： Described is a process to pattern adhesion and top contact layers in such a way that at least some portion of the top contact layers overlaps the adhesion layer, while another portion of the top contact layer overlaps with the bottom contacts, but does not overlap with the adhesion layer. The overlap between the top contact layer and the adhesion layer helps to hold the top contact layer onto the sacrificial layer. Because there is no overlap between the adhesion layer and the bottom contact, the removal of adhesion layer is no longer necessary, leading to better contacts and simplifying the fabrication process.

摘要翻译： 描述了以使得至少部分顶部接触层与粘合层重叠的方式图案粘合和顶部接触层的过程，而顶部接触层的另一部分与底部接触部重叠，但是不与 粘附层。 顶部接触层和粘合层之间的重叠有助于将顶部接触层保持在牺牲层上。 因为粘合层和底部接触之间没有重叠，所以不再需要去除粘附层，导致更好的接触和简化制造过程。

公开(公告)号：US07202765B2

公开(公告)日：2007-04-10

申请号：US10845425

申请日：2004-05-14

申请人： Jun Shen ,  Rimantas L. Vaitkus ,  Gordon Tam ,  Meichun Ruan

发明人： Jun Shen ,  Rimantas L. Vaitkus ,  Gordon Tam ,  Meichun Ruan

IPC分类号： H01H51/22

CPC分类号： H01P1/127 ,  H01H50/005 ,  H01H2050/007

摘要： Radio frequency (RF) switch comprising an electromagnet formed on a magnet, a transmission line formed on the electromagnet and having a ground line and a signal line, and a movable contact connected to either the ground line or the signal line and capable of electrically coupling the ground line with the signal line. The transmission line is capable of propagating a RF signal if the ground line is electrically decoupled from the signal line. Conversely, the transmission line is incapable of propagating a RF signal if the ground line is electrically coupled with the signal line. The electromagnet can comprise an electromagnetic coil, formed in a layer of dielectric material, electrically coupled to a current source. Preferably, the movable contact is capable of being magnetically actuated, and is latchable. The magnet, the electromagnet, the transmission line, and the movable contact can have dimensions at a micron order of magnitude. The transmission line can be a coplanar waveguide. The coplanar waveguide can include a ground plane positioned between a layer of dielectric material and the electromagnet. The coplanar waveguide can also include means to electrically couple the ground plane to the ground line.

摘要翻译： 射频（RF）开关，其包括形成在磁体上的电磁体，形成在电磁体上并具有接地线和信号线的传输线，以及连接到地线或信号线的可移动触点，并且能够电耦合 地线与信号线。 如果接地线与信号线电耦合，则传输线能够传播RF信号。 相反，如果接地线与信号线电耦合，则传输线不能传播RF信号。 电磁体可以包括电磁线圈，其形成在电耦合到电流源的电介质材料层中。 优选地，可动触头能够被磁力驱动，并且可锁定。 磁体，电磁体，传输线和可动触点可以具有微米数量级的尺寸。 传输线可以是共面波导。 共面波导可以包括位于介电材料层和电磁体之间的接地平面。 共面波导还可以包括将接地平面电耦合到地线的装置。

公开(公告)号：US4814258A

公开(公告)日：1989-03-21

申请号：US77357

申请日：1987-07-24

申请人： Gordon Tam

发明人： Gordon Tam

IPC分类号： G03F7/09 ,  G03C1/495 ,  G03C1/76

CPC分类号： G03F7/094

摘要： An effective bi-layer photoresist structure comprising a bottom planarization layer or PMGI and a top photoresist imaging layer which eliminates an intermixing layer between the top photoresist imaging layer and the bottom planarization layer, and provides a desired undercut profile between the two layers to insure efficient lift-off for gate fabrication, said undercut profile formed due to the solubility effect of a solvent soak on the two layers.

摘要翻译： 一种有效的双层光致抗蚀剂结构，其包括底部平坦化层或PMGI和顶部光致抗蚀剂成像层，其消除顶部光致抗蚀剂成像层和底部平坦化层之间的混合层，并且在两层之间提供期望的底切轮廓以确保有效 用于浇口制造的剥离，由于溶剂浸泡在两层上的溶解作用而形成所述底切轮廓。

公开(公告)号：US07420447B2

公开(公告)日：2008-09-02

申请号：US11151663

申请日：2005-06-14

申请人： Meichun Ruan ,  Jun Shen ,  Gordon Tam

发明人： Meichun Ruan ,  Jun Shen ,  Gordon Tam

IPC分类号： H01H51/22

CPC分类号： H01H50/005 ,  H01H2050/007

摘要： A micro-magnetic switch includes a permanent magnet and a supporting device having contacts coupled thereto and an embedded coil. The supporting device can be positioned proximate to the magnet. The switch also includes a cantilever coupled at a central point to the supporting device. The cantilever has a conducting material coupled proximate an end and on a side of the cantilever facing the supporting device and having a soft magnetic material coupled thereto. During thermal cycling the cantilever can freely expand based on being coupled at a central point to the supporting device, which substantially reduces coefficient of thermal expansion differences between the cantilever and the supporting device.

摘要翻译： 微型磁性开关包括永磁体和具有与其连接的触点和嵌入式线圈的支撑装置。 支撑装置可以靠近磁体定位。 开关还包括在支撑装置的中心点处联接的悬臂。 悬臂具有接近靠近支撑装置的悬臂的端部和一侧上的导电材料，并且具有与其连接的软磁性材料。 在热循环期间，悬臂可以基于在支撑装置的中心点处联接而自由地膨胀，这大大降低了悬臂与支撑装置之间的热膨胀差异系数。

公开(公告)号：US06424083B1

公开(公告)日：2002-07-23

申请号：US09501071

申请日：2000-02-09

申请人： Gordon Tam ,  Ganming Qin ,  Barry P. O'Brien

发明人： Gordon Tam ,  Ganming Qin ,  Barry P. O'Brien

IPC分类号： H01J130

CPC分类号： H01J1/3042

摘要： A field emission device (100) includes a cathode (110) and a ballast resistor (112) connected to cathode (110). Ballast resistor (112) includes a thin metallic layer (113) and a protective layer (114) disposed on metallic layer (113). Metallic layer (113) is made from chromium and has a thickness of about 40 angstroms. Protective layer (114) is made from sputtered silicon and has a thickness of about 500 angstroms. A portion of metallic layer (113) makes physical contact with cathode (110) and is sandwiched between cathode (110) and protective layer (114). Protective layer (114) is positioned to shield metallic layer (113) from high transient voltages.

摘要翻译： 场发射器件（100）包括阴极（110）和连接到阴极（110）的镇流电阻器（112）。 镇流电阻器（112）包括薄金属层（113）和设置在金属层（113）上的保护层（114）。 金属层（113）由铬制成，厚度约为40埃。 保护层（114）由溅射硅制成，厚度约为500埃。 金属层（113）的一部分与阴极（110）物理接触并夹在阴极（110）和保护层（114）之间。 保护层（114）被定位成屏蔽金属层（113）免受高瞬态电压的影响。

公开(公告)号：US5541122A

公开(公告)日：1996-07-30

申请号：US415832

申请日：1995-04-03

申请人： Shang-Hui L. Tu ,  Gordon Tam ,  Pak Tam

发明人： Shang-Hui L. Tu ,  Gordon Tam ,  Pak Tam

IPC分类号： H01L21/331 ,  H01L29/739 ,  H01L21/265

CPC分类号： H01L29/66333 ,  H01L29/7395 ,  Y10S148/126

摘要： A method of fabricating a fast-switching, low-R(on) insulated-gate bipolar transistor including providing an N-type semiconductor wafer with a planar surface, forming a thin heavily-doped layer, having a concentration in the range of 3.times.10.sup.17 /cm.sup.3 to 1.times.10.sup.19 /cm.sup.3, in the wafer adjacent the planar surface, providing a P-type semiconductor wafer, and bonding a surface of the P-type wafer to the planar surface of the N-type wafer. An emitter and a gate are then formed in the N-type wafer in the usual manner and a collector is formed on the P-type wafer.

摘要翻译： 一种制造快速切换低R（on）绝缘栅双极晶体管的方法，包括提供具有平面表面的N型半导体晶片，形成浓度在3×10 17 /℃范围内的薄重掺杂层， cm 3至1×10 19 / cm 3，在与平面相邻的晶片中，提供P型半导体晶片，并将P型晶片的表面接合到N型晶片的平面表面。 然后以通常的方式在N型晶片中形成发射极和栅极，并在P型晶片上形成集电极。

公开(公告)号：US5105250A

公开(公告)日：1992-04-14

申请号：US594576

申请日：1990-10-09

申请人： Gordon Tam ,  Lynnita K. Knoch

发明人： Gordon Tam ,  Lynnita K. Knoch

IPC分类号： H01L29/737

CPC分类号： H01L29/7378

摘要： A heterojunction bipolar transistor having a thin, lightly doped, silicon emitter disposed on a silicon-germanium base layer exhibits low emitter resistance and low emitter-base capacitance. The lightly doped silicon emitter maintains the bandgap differential between silicon-germanium and silicon. The silicon emitter is fabricated such that the silicon emitter will be substantially depleted at zero bias, resulting in low emitter-base resistance and emitter resistance.

摘要翻译： 具有设置在硅 - 锗基底层上的薄的轻掺杂的硅发射极的异质结双极晶体管表现出低发射极电阻和低发射极 - 基极电容。 轻掺杂硅发射体保持硅 - 锗和硅之间的带隙差异。 制造硅发射器，使得硅发射极在零偏压下基本上耗尽，导致低发射极 - 基极电阻和发射极电阻。