Phase controlled surface coil magnetic resonance imaging
    1.
    发明授权
    Phase controlled surface coil magnetic resonance imaging 失效
    相控面磁共振成像

    公开(公告)号:US06952100B1

    公开(公告)日:2005-10-04

    申请号:US10709354

    申请日:2004-04-29

    IPC分类号: G01R33/3415 G01V3/00

    CPC分类号: G01R33/3415

    摘要: A magnetic resonance imaging assembly is provided. The assembly includes a magnet assembly defining a scanning bore along a z-direction. The assembly further includes a surface coil assembly positioned within the scanning bore. The surface coil assembly receives an imaging field. The surface coil assembly comprises a first surface coil positioned along the z-direction. The first surface coil is induced with a first coil current comprised of a first coil amplitude and a first coil phase. The surface coil assembly includes a second surface coil positioned along said z-direction. The second surface coil is induced with a second coil current comprised of a second coil amplitude and a second coil phase. The second coil phase is varied from the first coil phase to correct asymmetries within the imaging field.

    摘要翻译: 提供磁共振成像组件。 组件包括沿z方向限定扫描孔的磁体组件。 组件还包括位于扫描孔内的表面线圈组件。 表面线圈组件接收成像场。 表面线圈组件包括沿z方向定位的第一表面线圈。 用第一线圈振幅和第一线圈相位的第一线圈电流感应第一表面线圈。 表面线圈组件包括沿着z方向定位的第二表面线圈。 第二表面线圈由包括第二线圈振幅和第二线圈相的第二线圈电流感应。 第二线圈相位从第一线圈相位变化,以校正成像场内的不对称性。

    Composition for removing photoresist layer and method for using it
    3.
    发明授权
    Composition for removing photoresist layer and method for using it 有权
    去除光致抗蚀剂层的组合物及其使用方法

    公开(公告)号:US08038749B2

    公开(公告)日:2011-10-18

    申请号:US11920247

    申请日:2006-05-12

    IPC分类号: C09G1/02 C09G1/04

    摘要: A composition for removing a photoresist layer and a method for using it are disclosed. The composition comprises a chemical portion which includes water and chemical constituents dissolving or softening the photoresist layer and a mechanical portion which is abrasive particles. Using the composition and the method according to the present invention can decrease the conventional two steps of removing a photoresist layer process to one step, thereby simplifying the procedure, shortening the removing time and reducing the cost. The chemical constituents in the composition according to the present invention are of low toxicity and flammability and the amount used is small, which makes it more friendly with the environment and decreases the expense of disposing the waste.

    摘要翻译: 公开了一种用于除去光致抗蚀剂层的组合物及其使用方法。 组合物包括化学部分,其包括水和溶解或软化光致抗蚀剂层的化学成分和作为磨料颗粒的机械部分。 使用根据本发明的组合物和方法可以将将光致抗蚀剂层处理去除一个步骤的常规两个步骤减少,从而简化了步骤,缩短了去除时间并降低了成本。 根据本发明的组合物中的化学成分具有低毒性和易燃性,并且所用量小,这使得它对环境更加友好并且降低了废弃物的处理费用。

    Chemical mechanical polishing slurry useful for copper/tantalum substrates
    5.
    发明授权
    Chemical mechanical polishing slurry useful for copper/tantalum substrates 失效
    用于铜/钽基板的化学机械抛光浆料

    公开(公告)号:US06217416B1

    公开(公告)日:2001-04-17

    申请号:US09105065

    申请日:1998-06-26

    IPC分类号: C09K1300

    CPC分类号: C23F3/00 C09G1/02 H01L21/3212

    摘要: The present invention is a first CMP slurry including an abrasive, an oxidizing agent, a complexing agent, a film forming agent and an organic amino compound, a second polishing slurry including an abrasive, an oxidizing agent, and acetic acid wherein the weight ratio of the oxidizing agent to acetic acid is at least 10 and a method for using the first and second polishing slurries sequentially to polish a substrate containing copper and containing tantalum or tantalum nitride or both tantalum and tantalum nitride.

    摘要翻译: 本发明是包括研磨剂,氧化剂,配位剂,成膜剂和有机氨基化合物的第一CMP浆料,包括研磨剂,氧化剂和乙酸的第二研磨浆料,其中重量比 氧化剂至乙酸为至少10,并且依次使用第一和第二抛光浆料的方法来抛光含有铜并含有钽或氮化钽或钽或氮化钽的基板。

    Multi-oxidizer precursor for chemical mechanical polishing
    6.
    发明授权
    Multi-oxidizer precursor for chemical mechanical polishing 失效
    用于化学机械抛光的多氧化剂前体

    公开(公告)号:US6039891A

    公开(公告)日:2000-03-21

    申请号:US890778

    申请日:1997-07-11

    CPC分类号: C09G1/02

    摘要: A chemical mechanical polishing slurry precursor comprising urea, a second oxidizer, an organic acid, and an abrasive, and a method for using the chemical mechanical polishing slurry precursor to prepare a chemical mechanical polishing slurry with a first oxidizer and thereafter using the slurry to remove titanium, titanium nitride, and an aluminum alloy containing layers from a substrate.

    摘要翻译: 一种包含尿素,第二氧化剂,有机酸和研磨剂的化学机械抛光浆料前体,以及使用化学机械抛光浆料前体用第一氧化剂制备化学机械抛光浆料的方法,然后使用浆料除去 钛,氮化钛和含有层的铝合金。

    Multi-oxidizer slurry for chemical mechanical polishing
    7.
    发明授权
    Multi-oxidizer slurry for chemical mechanical polishing 失效
    用于化学机械抛光的多氧化剂浆料

    公开(公告)号:US5783489A

    公开(公告)日:1998-07-21

    申请号:US718937

    申请日:1996-09-24

    IPC分类号: C09G1/02 B44C1/22

    CPC分类号: C09G1/02

    摘要: A chemical mechanical polishing slurry comprising at least two oxidizing agents, an organic acid and an abrasive and a method for using the chemical mechanical polishing slurry to remove titanium, titanium nitride, and an aluminum alloy containing layer from a substrate.

    摘要翻译: 包含至少两种氧化剂,有机酸和研磨剂的化学机械抛光浆料以及使用化学机械抛光浆料从基材除去钛,氮化钛和含铝合金层的方法。

    Method of polishing a multi-layer substrate
    9.
    发明授权
    Method of polishing a multi-layer substrate 有权
    抛光多层基材的方法

    公开(公告)号:US06867140B2

    公开(公告)日:2005-03-15

    申请号:US10353512

    申请日:2003-01-29

    CPC分类号: H01L21/3212 C09G1/02

    摘要: The invention provides a method for polishing one or more layers of a multi-layer substrate that includes a first metal layer and a second layer comprising (i) contacting the first metal layer with a polishing system comprising a liquid carrier, at least one oxidizing agent, at least one polishing additive that increases the rate at which the system polishes at least one layer of the substrate, at least one stopping compound with a polishing selectivity of the first metal layer:second layer of at least about 30:1, wherein the stopping compound is a cationically charged nitrogen containing compound selected from compounds comprising amines, imines, amides, imides, and mixtures thereof, and a polishing pad and/or an abrasive, and (ii) polishing the first metal layer with the system until at least a portion of the first metal layer is removed from the substrate.

    摘要翻译: 本发明提供了一种用于抛光一层或多层多层基材的方法,所述多层基材包括第一金属层和第二层,其包括(i)使第一金属层与包括液体载体,至少一种氧化剂 至少一种抛光添加剂,其增加系统抛光至少一层基材的速率,至少一种具有至少约30:1的第一金属层的抛光选择性的停止化合物:第二层,其至少约30:1 停止化合物是选自包含胺,亚胺,酰胺,酰亚胺及其混合物的化合物的阳离子充氮的含氮化合物,以及抛光垫和/或研磨剂,和(ii)用系统抛光第一金属层直到至少 从衬底去除第一金属层的一部分。

    Method of polishing a multi-layer substrate
    10.
    发明授权
    Method of polishing a multi-layer substrate 有权
    抛光多层基材的方法

    公开(公告)号:US06852632B2

    公开(公告)日:2005-02-08

    申请号:US10353542

    申请日:2003-01-29

    CPC分类号: C09G1/02

    摘要: The invention provides a method for polishing one or more layers of a multi-layer substrate that includes a first metal layer and a second layer comprising (i) contacting the first metal layer with a polishing system comprising a liquid carrier, at least one oxidizing agent, at least one polishing additive that increases the rate at which the system polishes at least one layer of the substrate, wherein the polishing additive is selected from the group consisting of pyrophosphates, condensed phosphates, phosphonic acids and salts thereof, amines, amino alcohols, amides, imines, imino acids, nitriles, nitros, thiols thioesters, thioethers, carbothiolic acids, carbothionic acids, thiocarboxylic acids, thiosalicylic acids, and mixtures thereof, and a polishing pad and/or an abrasive, and (ii) polishing the first metal layer with the system until at least a portion of the first metal layer is removed from the substrate.

    摘要翻译: 本发明提供了一种用于抛光一层或多层多层基材的方法,所述多层基材包括第一金属层和第二层,其包括(i)使第一金属层与包括液体载体,至少一种氧化剂 至少一种抛光添加剂,其增加系统抛光至少一层基材的速率,其中所述抛光添加剂选自焦磷酸盐,缩合磷酸盐,膦酸及其盐,胺,氨基醇, 酰胺,亚胺,亚氨基酸,腈,亚硝基,硫醇硫酯,硫醚,硫代硫酸,碳硫酸,硫代羧酸,硫代水杨酸及其混合物,以及抛光垫和/或磨料,和(ii) 层,直到第一金属层的至少一部分从衬底去除。