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    Selectively converted inter-layer dielectric
    1.
    发明申请
    Selectively converted inter-layer dielectric 有权
    选择性转换的层间电介质

    公开(公告)号：US20050236714A1

    公开(公告)日：2005-10-27

    申请号：US11170322

    申请日：2005-06-28

    申请人： Jihperng Leu ,  Grant Kloster ,  David Gracias ,  Lee Rockford ,  Peter Moon ,  Chris Barns

    发明人： Jihperng Leu ,  Grant Kloster ,  David Gracias ,  Lee Rockford ,  Peter Moon ,  Chris Barns

    IPC分类号： H01L21/312 ,  H01L21/316 ,  H01L21/768 ,  H01L23/48

    CPC分类号： H01L21/76835 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/312 ,  H01L21/3124 ,  H01L21/31695 ,  H01L21/76807 ,  H01L21/7682

    摘要： An inter-layer dielectric structure and method of making such structure are disclosed. A composite dielectric layer, initially comprising a porous matrix and a porogen, is formed. Subsequent to other processing treatments, the porogen is decomposed and removed from at least a portion of the porous matrix, leaving voids defined by the porous matrix in areas previously occupied by the porogen. The resultant structure has a desirably low k value as a result of the porosity and materials comprising the porous matrix and porogen. The composite dielectric layer may be used in concert with other dielectric layers of varying porosity, dimensions, and material properties to provide varied mechanical and electrical performance profiles.

    摘要翻译： 公开了一种层间电介质结构及其制造方法。 形成初始包含多孔基质和致孔剂的复合介电层。 在其它处理处理之后，致孔剂从多孔基体的至少一部分分解和除去，留下由多孔基质定义的空隙，其中先前由致孔剂占据的区域。 所得结构由于孔隙率和包含多孔基质和致孔剂的材料而具有期望的低k值。 复合介电层可以与具有不同孔隙率，尺寸和材料性质的其它电介质层一起使用，以提供不同的机械和电气性能轮廓。

    Low-k dielectric film with good mechanical strength
    4.
    发明授权
    Low-k dielectric film with good mechanical strength 失效
    低k电介质膜具有良好的机械强度

    公开(公告)号：US06964919B2

    公开(公告)日：2005-11-15

    申请号：US10217966

    申请日：2002-08-12

    申请人： Grant Kloster ,  Lee Rockford ,  Jihperng Leu

    发明人： Grant Kloster ,  Lee Rockford ,  Jihperng Leu

    IPC分类号： H01L21/316 ,  H01L21/768 ,  H01L23/532 ,  H01L21/4763 ,  H01L21/44

    CPC分类号： H01L21/7684 ,  H01L21/02131 ,  H01L21/02164 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31629 ,  H01L21/76808 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The present invention discloses a method including providing a substrate; forming a dielectric over the substrate, the dielectric having a k value of about 2.5 or lower, the dielectric having a Young's modulus of elasticity of about 15 GigaPascals or higher; forming an opening in the dielectric; and forming a conductor in the opening.The present invention further discloses a structure including a substrate; a dielectric located over the substrate, the dielectric having a k value of 2.5 or lower, the dielectric having a Young's modulus of elasticity of about 15 GigaPascals or higher; an opening located in the dielectric; and a conductor located in the opening.

    摘要翻译： 本发明公开了一种提供基板的方法， 在所述基板上形成电介质，所述电介质具有约2.5或更低的k值，所述电介质具有约15千兆帕或更高的弹性模量; 在电介质中形成开口; 并在开口中形成导体。 本发明还公开了一种包括基板的结构; 电介质位于衬底上方，电介质的k值为2.5或更低，电介质具有约15千兆帕或更高的弹性模量; 位于电介质中的开口; 和位于开口中的导体。