公开(公告)号：US20070089991A1

公开(公告)日：2007-04-26

申请号：US11639733

申请日：2006-12-14

申请人： Gregory Wilson ,  Paul McHugh ,  Robert Weaver ,  Thomas Ritzdorf

发明人： Gregory Wilson ,  Paul McHugh ,  Robert Weaver ,  Thomas Ritzdorf

IPC分类号： C25D21/12

CPC分类号： C25D21/12 ,  C25D17/001 ,  C25F3/30

摘要： A facility for selecting and refining electrical parameters for processing a microelectronic workpiece in a processing chamber is described. The facility initially configures the electrical parameters in accordance with either a mathematical model of the processing chamber or experimental data derived from operating the actual processing chamber. After a workpiece is processed with the initial parameter configuration, the results are measured and a sensitivity matrix based upon the mathematical model of the processing chamber is used to select new parameters that correct for any deficiencies measured in the processing of the first workpiece. These parameters are then used in processing a second workpiece, which may be similarly measured, and the results used to further refine the parameters. In some embodiments, the facility analyzes a profile of the seed layer applied to a workpiece, and determines and communicates to a material deposition tool a set of control parameters designed to deposit material on the workpiece in a manner that compensates for deficiencies in the seed layer.

摘要翻译： 描述了一种用于选择和精炼用于在处理室中处理微电子工件的电参数的设备。 该设备最初根据处理室的数学模型或从操作实际处理室得到的实验数据来初始配置电参数。 在用初始参数配置处理工件之后，测量结果，并且使用基于处理室的数学模型的灵敏度矩阵来选择校正在第一工件的处理中测量的任何缺陷的新参数。 然后将这些参数用于处理可以类似地测量的第二工件，并且用于进一步改进参数的结果。 在一些实施例中，设备分析施加到工件的种子层的轮廓，并且确定并传送材料沉积工具一组控制参数，这些控制参数被设计成以补偿种子层中的缺陷的方式在工件上沉积材料 。

公开(公告)号：US20050189227A1

公开(公告)日：2005-09-01

申请号：US11097671

申请日：2005-03-31

申请人： Gregory Wilson ,  Paul McHugh ,  Robert Weaver ,  Thomas Ritzdorf

发明人： Gregory Wilson ,  Paul McHugh ,  Robert Weaver ,  Thomas Ritzdorf

IPC分类号： B23H3/02 ,  C25B9/00 ,  C25C3/16 ,  C25C3/20 ,  C25D5/00 ,  C25D5/02 ,  C25D17/00 ,  C25D21/12 ,  C25F7/00 ,  G06F19/00

CPC分类号： C25D21/12 ,  C25D17/001 ,  C25F3/30

摘要： A facility for selecting and refining electrical parameters for processing a microelectronic workpiece in a processing chamber is described. The facility initially configures the electrical parameters in accordance with either a mathematical model of the processing chamber or experimental data derived from operating the actual processing chamber. After a workpiece is processed with the initial parameter configuration, the results are measured and a sensitivity matrix based upon the mathematical model of the processing chamber is used to select new parameters that correct for any deficiencies measured in the processing of the first workpiece. These parameters are then used in processing a second workpiece, which may be similarly measured, and the results used to further refine the parameters. In some embodiments, the facility analyzes a profile of the seed layer applied to a workpiece, and determines and communicates to a material deposition tool a set of control parameters designed to deposit material on the workpiece in a manner that compensates for deficiencies in the seed layer.

公开(公告)号：US20070034516A1

公开(公告)日：2007-02-15

申请号：US11392477

申请日：2006-03-28

申请人： Gregory Wilson ,  Paul McHugh ,  Robert Weaver ,  Thomas Ritzdorf

发明人： Gregory Wilson ,  Paul McHugh ,  Robert Weaver ,  Thomas Ritzdorf

IPC分类号： C25D21/12

CPC分类号： G05B19/41875 ,  C25D7/123 ,  C25D17/001 ,  C25D21/12 ,  G05B2219/32182 ,  G05B2219/32216 ,  G05B2219/45031 ,  Y02P90/22 ,  Y02P90/265

摘要： A facility for selecting and refining electrical parameters for processing a microelectronic workpiece in a processing chamber is described. The facility initially configures the electrical parameters in accordance with either a numerical of the processing chamber or experimental data derived from operating the actual processing chamber. After a workpiece is processed with the initial parameter configuration, the results are measured and a sensitivity matrix based upon the numerical model of the processing chamber is used to select new parameters that correct for any deficiencies measured in the processing of the first workpiece. These parameters are then used in processing a second workpiece, which may be similarly measured, and the results used to further refine the parameters.

摘要翻译： 描述了一种用于选择和精炼用于在处理室中处理微电子工件的电参数的设备。 该设施最初根据处理室的数值或从操作实际处理室得到的实验数据来配置电参数。 在用初始参数配置处理工件之后，测量结果，并且使用基于处理室的数值模型的灵敏度矩阵来选择校正在第一工件的处理中测量的任何缺陷的新参数。 然后将这些参数用于处理可以类似地测量的第二工件，并且用于进一步改进参数的结果。

公开(公告)号：US20050245083A1

公开(公告)日：2005-11-03

申请号：US11053050

申请日：2005-02-07

申请人： Linlin Chen ,  Gregory Wilson ,  Paul McHugh ,  Robert Weaver ,  Thomas Ritzdorf

发明人： Linlin Chen ,  Gregory Wilson ,  Paul McHugh ,  Robert Weaver ,  Thomas Ritzdorf

IPC分类号： C25D3/38 ,  C25D5/02 ,  C25D5/08 ,  C25D5/10 ,  C25D5/50 ,  C25D7/12 ,  C25D17/10 ,  C25D21/12 ,  H01L21/288 ,  H01L21/44 ,  H01L21/768

CPC分类号： H01L21/76868 ,  C25D3/38 ,  C25D5/08 ,  C25D5/10 ,  C25D5/50 ,  C25D7/123 ,  C25D17/02 ,  C25D17/10 ,  C25D17/12 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76873 ,  H01L21/76877 ,  H01L2221/1089 ,  Y10S204/07 ,  Y10T428/12493

摘要： A process for metallization of a workpiece, such as a semiconductor workpiece. In an embodiment, an alkaline electrolytic copper bath is used to electroplate copper onto a seed layer, electroplate copper directly onto a barrier layer material, or enhance an ultra-thin copper seed layer which has been deposited on the barrier layer using a deposition process such as PVD. The resulting copper layer provides an excellent conformal copper coating that fills trenches, vias, and other microstructures in the workpiece. When used for seed layer enhancement, the resulting copper seed layer provide an excellent conformal copper coating that allows the microstructures to be filled with a copper layer having good uniformity using electrochemical deposition techniques. Further, copper layers that are electroplated in the disclosed manner exhibit low sheet resistance and are readily annealed at low temperatures.

摘要翻译： 用于对诸如半导体工件的工件进行金属化的工艺。 在一个实施方案中，使用碱性电解铜浴将铜电镀到种子层上，将铜直接电镀到阻挡层材料上，或者使用沉积方法增强已经沉积在阻挡层上的超薄铜籽晶层 作为PVD。 所得到的铜层提供了一种优异的保形铜涂层，其填充工件中的沟槽，通孔和其它微结构。 当用于种子层增强时，所得到的铜种子层提供了优异的共形铜涂层，其允许使用电化学沉积技术使微结构填充具有良好均匀性的铜层。 此外，以所公开的方式电镀的铜层表现出低的薄层电阻，并且在低温下容易退火。

公开(公告)号：US20050167273A1

公开(公告)日：2005-08-04

申请号：US11096972

申请日：2005-03-31

申请人： Gregory Wilson ,  Paul McHugh ,  Robert Weaver ,  Thomas Ritzdorf

发明人： Gregory Wilson ,  Paul McHugh ,  Robert Weaver ,  Thomas Ritzdorf

IPC分类号： B23H3/02 ,  C25B9/00 ,  C25C3/16 ,  C25C3/20 ,  C25D5/00 ,  C25D5/02 ,  C25D17/00 ,  C25D21/12 ,  C25F7/00 ,  G06F19/00

CPC分类号： C25D21/12 ,  C25D17/001 ,  C25F3/30

摘要： A facility for selecting and refining electrical parameters for processing a microelectronic workpiece in a processing chamber is described. The facility initially configures the electrical parameters in accordance with either a mathematical model of the processing chamber or experimental data derived from operating the actual processing chamber. After a workpiece is processed with the initial parameter configuration, the results are measured and a sensitivity matrix based upon the mathematical model of the processing chamber is used to select new parameters that correct for any deficiencies measured in the processing of the first workpiece. These parameters are then used in processing a second workpiece, which may be similarly measured, and the results used to further refine the parameters. In some embodiments, the facility analyzes a profile of the seed layer applied to a workpiece, and determines and communicates to a material deposition tool a set of control parameters designed to deposit material on the workpiece in a manner that compensates for deficiencies in the seed layer.

公开(公告)号：US20070221502A1

公开(公告)日：2007-09-27

申请号：US11739553

申请日：2007-04-24

申请人： Gregory Wilson ,  Paul McHugh ,  Robert Weaver ,  Thomas Ritzdorf

发明人： Gregory Wilson ,  Paul McHugh ,  Robert Weaver ,  Thomas Ritzdorf

IPC分类号： C25D21/12

CPC分类号： G05B19/41875 ,  C25D7/123 ,  C25D17/001 ,  C25D21/12 ,  G05B2219/32182 ,  G05B2219/32216 ,  G05B2219/45031 ,  Y02P90/22 ,  Y02P90/265

摘要： A facility for selecting and refining electrical parameters for processing a microelectronic workpiece in a processing chamber is described. The facility initially configures the electrical parameters in accordance with either a numerical of the processing chamber or experimental data derived from operating the actual processing chamber. After a workpiece is processed with the initial parameter configuration, the results are measured and a sensitivity matrix based upon the numerical model of the processing chamber is used to select new parameters that correct for any deficiencies measured in the processing of the first workpiece. These parameters are then used in processing a second workpiece, which may be similarly measured, and the results used to further refine the parameters.

摘要翻译： 描述了一种用于选择和精炼用于在处理室中处理微电子工件的电参数的设备。 该设施最初根据处理室的数值或从操作实际处理室得到的实验数据来配置电参数。 在用初始参数配置处理工件之后，测量结果，并且使用基于处理室的数值模型的灵敏度矩阵来选择校正在第一工件的处理中测量的任何缺陷的新参数。 然后将这些参数用于处理可以类似地测量的第二工件，并且用于进一步改进参数的结果。

公开(公告)号：US20060000716A1

公开(公告)日：2006-01-05

申请号：US11038455

申请日：2005-01-18

申请人： Gregory Wilson ,  Paul McHugh ,  Robert Weaver ,  Thomas Ritzdorf

发明人： Gregory Wilson ,  Paul McHugh ,  Robert Weaver ,  Thomas Ritzdorf

IPC分类号： C25D21/12 ,  C25D5/00

CPC分类号： C25D5/08 ,  C25D7/123 ,  C25D17/001 ,  C25D17/12 ,  C25D21/12 ,  Y10S204/07

摘要： A facility for selecting and refining electrical parameters for processing a microelectronic workpiece in a processing chamber is described. The facility initially configures the electrical parameters in accordance with either a mathematical model of the processing chamber or experimental data derived from operating the actual processing chamber. After a workpiece is processed with the initial parameter configuration, the results are measured and a sensitivity matrix based upon the mathematical model of the processing chamber is used to select new parameters that correct for any deficiencies measured in the processing of the first workpiece. These parameters are then used in processing a second workpiece, which may be similarly measured, and the results used to further refine the parameters.

公开(公告)号：US20050183959A1

公开(公告)日：2005-08-25

申请号：US11097508

申请日：2005-03-31

申请人： Gregory Wilson ,  Paul McHugh ,  Robert Weaver ,  Thomas Ritzdorf

发明人： Gregory Wilson ,  Paul McHugh ,  Robert Weaver ,  Thomas Ritzdorf

IPC分类号： C23C14/54 ,  C23C16/52 ,  C25D7/12 ,  C25D21/12 ,  C25D5/02

CPC分类号： C23C16/52 ,  C23C14/545 ,  C25D7/123 ,  C25D21/12

摘要： A facility for selecting and refining electrical parameters for processing a microelectronic workpiece in a processing chamber is described. The facility initially configures the electrical parameters in accordance with either a mathematical model of the processing chamber or experimental data derived from operating the actual processing chamber. After a workpiece is processed with the initial parameter configuration, the results are measured and a sensitivity matrix based upon the mathematical model of the processing chamber is used to select new parameters that correct for any deficiencies measured in the processing of the first workpiece. These parameters are then used in processing a second workpiece, which may be similarly measured, and the results used to further refine the parameters. In some embodiments, the facility analyzes a profile of the seed layer applied to a workpiece, and determines and communicates to a material deposition tool a set of control parameters designed to deposit material on the workpiece in a manner that compensates for deficiencies in the seed layer.

摘要翻译： 描述了一种用于选择和精炼用于在处理室中处理微电子工件的电参数的设备。 该设备最初根据处理室的数学模型或从操作实际处理室得到的实验数据来初始配置电参数。 在用初始参数配置处理工件之后，测量结果，并且使用基于处理室的数学模型的灵敏度矩阵来选择校正在第一工件的处理中测量的任何缺陷的新参数。 然后将这些参数用于处理可以类似地测量的第二工件，并且用于进一步改进参数的结果。 在一些实施例中，设备分析施加到工件的种子层的轮廓，并且确定并传送材料沉积工具一组控制参数，这些控制参数被设计成以补偿种子层中的缺陷的方式在工件上沉积材料 。

公开(公告)号：US20050167274A1

公开(公告)日：2005-08-04

申请号：US11097068

申请日：2005-03-31

申请人： Gregory Wilson ,  Paul McHugh ,  Robert Weaver ,  Thomas Ritzdorf

发明人： Gregory Wilson ,  Paul McHugh ,  Robert Weaver ,  Thomas Ritzdorf

IPC分类号： B23H3/02 ,  C25B9/00 ,  C25C3/16 ,  C25C3/20 ,  C25D5/00 ,  C25D5/02 ,  C25D17/00 ,  C25D21/12 ,  C25F7/00 ,  G06F19/00

CPC分类号： C25D21/12 ,  C25D17/001 ,  C25F3/30

摘要： A facility for selecting and refining electrical parameters for processing a microelectronic workpiece in a processing chamber is described. The facility initially configures the electrical parameters in accordance with either a mathematical model of the processing chamber or experimental data derived from operating the actual processing chamber. After a workpiece is processed with the initial parameter configuration, the results are measured and a sensitivity matrix based upon the mathematical model of the processing chamber is used to select new parameters that correct for any deficiencies measured in the processing of the first workpiece. These parameters are then used in processing a second workpiece, which may be similarly measured, and the results used to further refine the parameters. In some embodiments, the facility analyzes a profile of the seed layer applied to a workpiece, and determines and communicates to a material deposition tool a set of control parameters designed to deposit material on the workpiece in a manner that compensates for deficiencies in the seed layer.

公开(公告)号：US20050084987A1

公开(公告)日：2005-04-21

申请号：US10970809

申请日：2004-10-20

申请人： Gregory Wilson ,  Paul McHugh ,  Robert Weaver ,  Thomas Ritzdorf,

发明人： Gregory Wilson ,  Paul McHugh ,  Robert Weaver ,  Thomas Ritzdorf,

IPC分类号： C23C14/54 ,  C23C16/52 ,  C25D5/00 ,  C25D7/12 ,  C25D17/00 ,  C25D21/12 ,  G06F17/50 ,  G06F19/00 ,  H01L21/00

CPC分类号： C23C16/52 ,  C23C14/545 ,  C25D7/123 ,  C25D21/12 ,  G05B2219/37576 ,  G05B2219/45031

摘要： A facility for selecting and refining electrical parameters for processing a microelectronic workpiece in a processing chamber is described. The facility initially configures the electrical parameters in accordance with either a mathematical model of the processing chamber or experimental data derived from operating the actual processing chamber. After a workpiece is processed with the initial parameter configuration, the results are measured and a sensitivity matrix based upon the mathematical model of the processing chamber is used to select new parameters that correct for any deficiencies measured in the processing of the first workpiece. These parameters are then used in processing a second workpiece, which may be similarly measured, and the results used to further refine the parameters. In some embodiments, the facility analyzes a profile of the seed layer applied to a workpiece, and determines and communicates to a material deposition tool a set of control parameters designed to deposit material on the workpiece in a manner that compensates for deficiencies in the seed layer.

摘要翻译： 描述了一种用于选择和精炼用于在处理室中处理微电子工件的电参数的设备。 该设备最初根据处理室的数学模型或从操作实际处理室得到的实验数据来初始配置电参数。 在用初始参数配置处理工件之后，测量结果，并且使用基于处理室的数学模型的灵敏度矩阵来选择校正在第一工件的处理中测量的任何缺陷的新参数。 然后将这些参数用于处理可以类似地测量的第二工件，并且用于进一步改进参数的结果。 在一些实施例中，设备分析施加到工件的种子层的轮廓，并且确定并传送材料沉积工具一组控制参数，这些控制参数被设计成以补偿种子层中的缺陷的方式在工件上沉积材料 。