公开(公告)号：US20050073689A1

公开(公告)日：2005-04-07

申请号：US10676679

申请日：2003-10-01

Applicant: H. Pang ,  R. Austin

Inventor： H. Pang ,  R. Austin

IPC: G01J11/00 ,  G01B9/02

CPC classification number: G01J11/00 ,  H01S3/10053 ,  H01S3/105 ,  H01S3/106 ,  H01S3/1394 ,  H01S3/2383

Abstract: Time-correlation methods for determining pulse characteristics from a modelocked ultrafast laser include a cross-correlation method and an auto-correlation method. In the cross-correlation method, pulses from the laser and pulses from another modelocked laser are incident on a two-photon detector that responds when the pulses overlap in time. The lasers are synchronized to the same frequency and the phase difference between pulses from the two lasers is varied to vary the temporal pulse overlap while recording the detector response. Pulse characteristics are determined from recorded data representing the detector response as a function of phase difference. In the auto-correlation method, pulses from one laser are divided into two components. One component follows a fixed delay path before being temporally overlapped at the detector with another component that has not been delayed. The temporal overlap is varied by varying the pulse repetition frequency. Pulse characteristics are determined from recorded data representing the detector response as a function of phase difference.

Abstract translation: 用于从锁模超快激光器确定脉冲特性的时间相关方法包括互相关方法和自相关方法。 在互相关方法中，来自激光器的脉冲和来自另一个锁模激光器的脉冲入射在双光子检测器上，当脉冲在时间上重叠时响应。 激光器被同步到相同的频率，并且来自两个激光器的脉冲之间的相位差被改变以在记录检测器响应的同时改变时间脉冲重叠。 根据表示作为相位差的函数的检测器响应的记录数据确定脉冲特性。 在自相关方法中，来自一个激光器的脉冲被分成两部分。 一个组件遵循固定的延迟路径，然后在未被延迟的另一个组件在检测器处暂时重叠。 通过改变脉冲重复频率来改变时间重叠。 根据表示作为相位差的函数的检测器响应的记录数据确定脉冲特性。

公开(公告)号：US20050169340A1

公开(公告)日：2005-08-04

申请号：US10767420

申请日：2004-01-29

Applicant: Serguei Anikitchev ,  Hailong Zhou ,  R. Austin

Inventor： Serguei Anikitchev ,  Hailong Zhou ,  R. Austin

IPC: H01L21/00 ,  H01S3/091 ,  H01S3/094 ,  H01S5/00 ,  H01S5/026 ,  H01S5/028 ,  H01S5/04 ,  H01S5/042 ,  H01S5/223 ,  H01S5/40

CPC classification number: H01S5/041 ,  H01S5/026 ,  H01S5/028 ,  H01S5/0287 ,  H01S5/0288 ,  H01S5/0425 ,  H01S5/2231 ,  H01S5/4031 ,  H01S2304/00

Abstract: A multilayer semiconductor laser includes a substrate on which is formed a semiconductor multilayer heterostructure divided into a plurality of electrically pumped regions and an elongated optically pumped region. The electrically pumped regions generate and delivering optical pump radiation laterally into the elongated optically pumped region. Output radiation is generated and delivered by the optically pumped region.

Abstract translation: 多层半导体激光器包括在其上形成分为多个电泵浦区域和细长的光泵浦区域的半导体多层异质结构的衬底。 电泵浦区域产生并将光泵浦辐射横向输送到细长的光泵浦区域中。 输出辐射由光泵浦区域产生和传送。

公开(公告)号：US20050277215A1

公开(公告)日：2005-12-15

申请号：US11194000

申请日：2005-07-29

Applicant: Serguei Anikitchev ,  Hailong Zhou ,  R. Austin

Inventor： Serguei Anikitchev ,  Hailong Zhou ,  R. Austin

IPC: H01L21/00 ,  H01S3/091 ,  H01S3/094 ,  H01S5/00 ,  H01S5/026 ,  H01S5/028 ,  H01S5/04 ,  H01S5/042 ,  H01S5/223 ,  H01S5/40

CPC classification number: H01S5/041 ,  H01S5/026 ,  H01S5/028 ,  H01S5/0287 ,  H01S5/0288 ,  H01S5/0425 ,  H01S5/2231 ,  H01S5/4031 ,  H01S2304/00

Abstract: A multilayer semiconductor laser includes a substrate on which is formed a semiconductor multilayer heterostructure divided into a plurality of electrically pumped regions and an elongated optically pumped region. The electrically pumped regions generate and deliver optical pump radiation laterally into the elongated optically pumped region. Output radiation is generated and delivered by the optically pumped region.

Abstract translation: 多层半导体激光器包括在其上形成分为多个电泵浦区域和细长的光泵浦区域的半导体多层异质结构的衬底。 电泵浦区域产生并将光泵浦辐射横向地传送到细长的光泵浦区域。 输出辐射由光泵浦区域产生和传送。

公开(公告)号：US20050265421A1

公开(公告)日：2005-12-01

申请号：US11193122

申请日：2005-07-29

Applicant: Stuart Butterworth ,  Andrea Caprara ,  R. Austin

Inventor： Stuart Butterworth ,  Andrea Caprara ,  R. Austin

IPC: H01S3/081 ,  H01S3/082 ,  H01S3/083 ,  H01S3/0941 ,  H01S3/10 ,  H01S3/105 ,  H01S3/109 ,  H01S5/04 ,  H01S5/06 ,  H01S5/10 ,  H01S5/14 ,  H01S5/183 ,  H01S5/42

CPC classification number: H01S3/109 ,  H01S3/07 ,  H01S3/0816 ,  H01S3/082 ,  H01S3/083 ,  H01S3/0941 ,  H01S3/1003 ,  H01S3/105 ,  H01S5/041 ,  H01S5/141 ,  H01S5/183 ,  H01S5/423

Abstract: An optically pumped semiconductor laser includes an active ring-resonator having two or more optically pumped semiconductor (OPS) structures each including a mirror-structure and a multilayer gain-structure. The mirror-structures serve as fold mirrors for the resonator axis. An optically nonlinear crystal may be included in the ring-resonator for generating second-harmonic radiation from fundamental radiation generated in the resonator. Another optically nonlinear crystal may be provided for generating third-harmonic or fourth-harmonic radiation from the second-harmonic radiation. In one example, including a third-harmonic generating crystal, a passive ring-resonator partially coaxial with the active ring-resonator is provided for circulating second-harmonic radiation to provide resonant amplification of the second-harmonic radiation for enhancing third-harmonic conversion. Apparatus for automatically maintaining the passive ring-resonator in a resonant condition for the second-harmonic radiation is disclosed.

Abstract translation: 光泵浦半导体激光器包括具有两个或多个光泵浦半导体（OPS）结构的有源环形谐振器，每个结构包括镜面结构和多层增益结构。 镜结构用作谐振器轴的折叠镜。 环形谐振器中可以包括光学非线性晶体，用于从在谐振器中产生的基本辐射产生二次谐波辐射。 可以提供另一种光学非线性晶体用于从二次谐波辐射产生三次谐波或四次谐波辐射。 在一个示例中，包括三次谐波产生晶体，提供与有源环形谐振器部分同轴的无源环形谐振器，用于循环二次谐波辐射以提供用于增强三次谐波转换的二次谐波辐射的谐振放大。 公开了用于将二次谐波辐射的谐振条件下的无源环形谐振器自动维持的装置。

公开(公告)号：US20060216037A1

公开(公告)日：2006-09-28

申请号：US11087479

申请日：2005-03-23

Applicant: Alexander Wiessner ,  Thomas Schroeder ,  Hans-Stephan Albrecht ,  R. Austin

Inventor： Alexander Wiessner ,  Thomas Schroeder ,  Hans-Stephan Albrecht ,  R. Austin

IPC: H04B10/00

CPC classification number: H01S3/0057

Abstract: A pulse-stretcher has an optical delay loop including a beamsplitter. The beamsplitter divides an input pulse into a temporal sequence of pulse replicas, a first of which is transmitted by the beamsplitter and the remainder of which are reflected by the beamsplitter along the path of the transmitted replica. The sequence of replicas form an initially stretched pulse having a longer duration and lower peak power than the input pulse. A prism cooperative with the delay loop reflects the initially stretched pulse back into the delay loop along a path laterally displaced from the replica path. The beamsplitter divides the initially stretched pulse into a temporal sequence of pulse replicas propagating along a common path to form a finally stretched pulse, having a longer duration and a lower peak power than the initially stretched pulse. The finally stretched pulse has a sequence of power peaks. Peak power in the pulse is minimized when the beamsplitter reflectivity is selected such that the power of the first two of these peaks is equal.

Abstract translation: 脉冲展宽器具有包括分束器的光学延迟回路。 分束器将输入脉冲分成脉冲副本的时间序列，第一个脉冲副本由分束器发送，其余部分由分光器沿着所发送的副本的路径反射。 复制序列形成具有比输入脉冲更长的持续时间和更低峰值功率的初始拉伸脉冲。 与延迟环路的棱镜协同工作将沿着沿着从复制路径横向移位的路径的初始拉伸脉冲反射回延迟环路。 分束器将初始拉伸的脉冲划分成沿着公共路径传播的脉冲复制的时间序列，以形成具有比初始拉伸的脉冲更长的持续时间和更低的峰值功率的最终拉伸的脉冲。 最后拉伸的脉冲具有一系列功率峰值。 当选择分束器反射率使得这些峰中的前两个的功率相等时，脉冲中的峰值功率被最小化。

公开(公告)号：US20050063428A1

公开(公告)日：2005-03-24

申请号：US10667675

申请日：2003-09-22

Applicant: Serguei Anikitchev ,  R. Austin

Inventor： Serguei Anikitchev ,  R. Austin

IPC: G02B27/09 ,  G02B27/10 ,  H01S5/00 ,  H01S5/024 ,  H01S5/40 ,  H01S3/10 ,  H01S3/08

CPC classification number: G02B27/0955 ,  G02B19/0014 ,  G02B19/0057 ,  H01S5/005 ,  H01S5/024 ,  H01S5/4012 ,  H01S5/4031

Abstract: Apparatus for projecting a line of light includes a linear array of diode-lasers arranged in a diode-laser bar. The apparatus includes an optical system. Components of the system include a plurality of lenses and array of cylindrical microlenses having the same spacing as diode-lasers in the diode-laser array. The microlens array is spaced at a distance from the diode-laser bar and aligned with the diode-laser bar such that the front focal plane of the microlens array is between the diode-laser bar and the microlens array. The optical system components are configured and arranged to project overlapping elongated images in a predetermined plane. The overlapping images form the line of light. The elongated images are images of cross-sections of beams from the diode-lasers where the beams are intersected by the front focal plane of the microlens array.

Abstract translation: 用于投射一束光的装置包括布置在二极管激光条中的二极管激光器的线性阵列。 该装置包括光学系统。 该系统的组件包括多个透镜和具有与二极管激光器阵列中的二极管激光器相同间隔的圆柱形微透镜阵列。 微透镜阵列与二极管激光棒间隔一定距离，并与二极管激光条对准，使得微透镜阵列的前焦平面位于二极管激光条和微透镜阵列之间。 光学系统组件被配置和布置成在预定平面中投影重叠的细长图像。 重叠的图像形成光线。 细长图像是来自二极管激光器的光束横截面的图像，其中光束与微透镜阵列的前焦平面相交。

公开(公告)号：US20070036194A1

公开(公告)日：2007-02-15

申请号：US11203734

申请日：2005-08-15

Applicant: Sergei Govorkov ,  Luis Spinelli ,  R. Austin

Inventor： Sergei Govorkov ,  Luis Spinelli ,  R. Austin

IPC: H01S3/22 ,  H01S3/091 ,  H01S3/09

CPC classification number: H01S5/041 ,  B82Y20/00 ,  H01S5/0222 ,  H01S5/02296 ,  H01S5/024 ,  H01S5/141 ,  H01S5/183 ,  H01S5/3018 ,  H01S5/3045 ,  H01S5/327 ,  H01S5/347

Abstract: In an optically pumped semiconductor laser including a semiconductor laser heterostructure, energy of high-energy electrons of an electron beam is converted by excimer formation and dissociation in a gas into ultraviolet (UV) radiation. The ultraviolet radiation is used to optically pump the heterostructure. Materials of the heterostructure may include II-VI compounds, oxides, or diamond. Both surface-emitting and edge-emitting heterostructures may be optically pumped by the UV radiation.

Abstract translation: 在包括半导体激光异质结构的光泵浦半导体激光器中，电子束的高能电子的能量通过准分子的形成和气体中的解离转化成紫外（UV）辐射。 使用紫外线辐射来泵浦异质结构。 异质结构的材料可以包括II-VI化合物，氧化物或金刚石。 表面发射和边缘发射异质结构都可以通过UV辐射被光泵浦。

公开(公告)号：US20050276301A1

公开(公告)日：2005-12-15

申请号：US10866907

申请日：2004-06-14

Applicant: Luis Spinelli ,  Hailong Zhou ,  R. Austin

Inventor： Luis Spinelli ,  Hailong Zhou ,  R. Austin

IPC: H01S3/0941 ,  H01S5/00 ,  H01S5/04 ,  H01S5/14 ,  H01S5/183 ,  H01S5/343 ,  H01S5/347 ,  H01S5/40 ,  H01S3/093 ,  H01S3/091 ,  H01S3/092 ,  H01S3/094

CPC classification number: B82Y20/00 ,  H01S3/094057 ,  H01S3/0941 ,  H01S5/005 ,  H01S5/041 ,  H01S5/141 ,  H01S5/183 ,  H01S5/34333 ,  H01S5/347 ,  H01S5/4025

Abstract: A semiconductor laser includes a multilayer semiconductor laser heterostructure including at least one active layer of a II-VI semiconductor material and is optically pumped by one or more indium gallium nitride (InGaN) diode-lasers. Group II elements in the II-VI semiconductor material are zinc, cadmium, magnesium, beryllium, strontium, and barium. Group VI elements in the II-VI semiconductor material are Sulfur, Selenium, and Tellurium. In one example of the laser an edge emitting heterostructure includes two active layers of zinc cadmium selenide, two waveguide layers of zinc magnesium sulfoselenide, and two cladding layers, also of zinc magnesium sulfoselenide. Proportions of elements in the cladding layer material and the waveguide layer material are selected such that the waveguide layer material has a higher bandgap than the material of the waveguide layers. In another example, a two dimensional array of InGaN diode-lasers is arranged to optically pump a one dimensional array of II-VI edge-emitting heterostructure lasers.

Abstract translation: 半导体激光器包括包含至少一个II-VI半导体材料的有源层的多层半导体激光异质结构，并被一个或多个铟镓氮（InGaN）二极管激光器光泵浦。 II-VI族半导体材料中的II族元素是锌，镉，镁，铍，锶和钡。 II-VI族半导体材料中的VI族元素是硫，硒和碲。 在激光器的一个实例中，边缘发射异质结构包括两个硒化锌镉活性层，两个磺酸锌镁纳米波导层和两个包层，也是锌硫酸镁镁。 选择包层材料和波导层材料中的元素的比例使得波导层材料具有比波导层的材料更高的带隙。 在另一个示例中，布置InGaN二极管激光器的二维阵列以光学泵浦II-VI边缘发射异质结构激光器的一维阵列。