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    Reusable semiconductor substrates
    1.
    发明授权
    Reusable semiconductor substrates 有权
    可重复使用的半导体衬底

    公开(公告)号：US09570351B2

    公开(公告)日：2017-02-14

    申请号：US14795684

    申请日：2015-07-09

    Applicant: Hewlett-Packard Development Company, L.P.

    Inventor： Di Liang

    IPC: H01L29/32 ,  H01L21/78 ,  H01L21/02 ,  H01L21/3105 ,  H01L23/00

    CPC classification number: H01L21/78 ,  H01L21/02002 ,  H01L21/02521 ,  H01L21/02609 ,  H01L21/30612 ,  H01L21/3105 ,  H01L21/76254 ,  H01L23/564 ,  H01L29/32

    Abstract: In example implementations, a plurality of material layers and a plurality of etch stop layers are grown on a first substrate. Ions are implanted through at least one material layer of the plurality of material layers into an etch stop layer of the plurality of etch stop layers to create defects in the etch stop layer. A first material layer of the substrate is bonded to a second substrate. The etch stop layer is split to remove the first substrate from the second substrate. The first substrate is reused to bond another material layer of the plurality of material layers to a third substrate.

    Abstract translation: 在示例性实现中，在第一基板上生长多个材料层和多个蚀刻停止层。 离子通过多个材料层中的至少一个材料层注入到多个蚀刻停止层的蚀刻停止层中，以在蚀刻停止层中产生缺陷。 衬底的第一材料层与第二衬底结合。 将蚀刻停止层分开以从第二基板移除第一基板。 第一衬底被重新用于将多个材料层的另一材料层粘合到第三衬底。

    REUSABLE SEMICONDUCTOR SUBSTRATES
    2.
    发明申请
    REUSABLE SEMICONDUCTOR SUBSTRATES 有权
    可重复使用的半导体衬底

    公开(公告)号：US20170011964A1

    公开(公告)日：2017-01-12

    申请号：US14795684

    申请日：2015-07-09

    Applicant: Hewlett-Packard Development Company, L.P.

    Inventor： Di Liang

    IPC: H01L21/78 ,  H01L21/3105 ,  H01L21/02

    CPC classification number: H01L21/78 ,  H01L21/02002 ,  H01L21/02521 ,  H01L21/02609 ,  H01L21/30612 ,  H01L21/3105 ,  H01L21/76254 ,  H01L23/564 ,  H01L29/32

    Abstract: In example implementations, a plurality of material layers and a plurality of etch stop layers are grown on a first substrate. Ions are implanted through at least one material layer of the plurality of material layers into an etch stop layer of the plurality of etch stop layers to create defects in the etch stop layer. A first material layer of the substrate is bonded to a second substrate. The etch stop layer is split to remove the first substrate from the second substrate. The first substrate is reused to bond another material layer of the plurality of material layers to a third substrate.

    Abstract translation: 在示例性实现中，在第一基板上生长多个材料层和多个蚀刻停止层。 离子通过多个材料层中的至少一个材料层注入到多个蚀刻停止层的蚀刻停止层中，以在蚀刻停止层中产生缺陷。 衬底的第一材料层与第二衬底结合。 将蚀刻停止层分开以从第二基板移除第一基板。 第一衬底被重新用于将多个材料层的另一材料层粘合到第三衬底。

    COUPLED RING RESONATOR SYSTEM
    3.
    发明申请
    COUPLED RING RESONATOR SYSTEM 有权
    联轴器谐振器系统

    公开(公告)号：US20150380900A1

    公开(公告)日：2015-12-31

    申请号：US14772352

    申请日：2013-03-13

    Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

    Inventor： Di Liang

    IPC: H01S5/10 ,  G02B6/293 ,  H01S5/30 ,  G02F1/025 ,  H01S5/068

    CPC classification number: H01S5/1071 ,  G02B6/29341 ,  G02F1/025 ,  H01S5/021 ,  H01S5/0215 ,  H01S5/0265 ,  H01S5/0612 ,  H01S5/06804 ,  H01S5/1032 ,  H01S5/142 ,  H01S5/3013 ,  H04B10/801

    Abstract: An example system includes a first ring resonator element for imparting optical gain to a light signal. The example system farther includes a second ring resonator element optically coupled to the first ring resonator element for modulating the light signal. A waveguide can be optically coupled to one of the first ring resonator element or the second ring resonator element for receiving the light signal output from the one of the first ring resonator element or the second ring resonator element, and transmitting the received light signal.

    Abstract translation: 示例性系统包括用于向光信号赋予光学增益的第一环形谐振元件。 该示例系统还包括光耦合到第一环形谐振元件的用于调制光信号的第二环形谐振元件。 波导可以光耦合到第一环形谐振器元件或第二环形谐振元件中的一个，用于接收从第一环形谐振元件或第二环形谐振器元件中的一个输出的光信号，并且发射接收的光信号。

    Thermal Shunt
    8.
    发明申请
    Thermal Shunt 审中-公开
    热分流器

    公开(公告)号：US20150318665A1

    公开(公告)日：2015-11-05

    申请号：US14742279

    申请日：2015-06-17

    Applicant: Hewlett-Packard Development Company, L.P.

    Inventor： Di Liang

    IPC: H01S5/024 ,  H01S5/10 ,  H01S5/02

    CPC classification number: H01S5/021 ,  H01S5/02461 ,  H01S5/02469 ,  H01S5/1071 ,  H01S5/4012 ,  H01S5/4087

    Abstract: A thermal shunt is to transfer heat from a sidewall of a device to a silicon substrate. The device is associated with a Silicon-On-Insulator (SOI) including a buried oxide layer. The thermal shunt extends through the buried oxide layer to the silicon substrate.

    Abstract translation: 热分流器将热量从器件的侧壁传递到硅衬底。 该器件与包括掩埋氧化物层的绝缘体上硅（SOI）相关联。 热分流器延伸穿过掩埋氧化物层到硅衬底。

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