公开(公告)号：US4814848A

公开(公告)日：1989-03-21

申请号：US58825

申请日：1987-06-05

申请人： Hajime Akimoto ,  Harushisa Ando ,  Toshifumi Ozaki ,  Hideyuki Ono ,  Shinya Ohba ,  Masaaki Nakai ,  Norio Koike

发明人： Hajime Akimoto ,  Harushisa Ando ,  Toshifumi Ozaki ,  Hideyuki Ono ,  Shinya Ohba ,  Masaaki Nakai ,  Norio Koike

IPC分类号： H01L27/146 ,  H01L27/148 ,  H01L29/78 ,  H01L27/14 ,  H01L29/06

CPC分类号： H01L27/14887

摘要： A solid-state imaging device having a plurality of semiconductor layers of a first conductivity type for photo-electric conversion provided on the surface of a first semiconductor layer of a second conductivity type which is formed on a part of one surface of a semiconductor substrate of the first conductivity type, a semiconductor layer of the first conductivity type for charge transfer provided on the surface of a second semiconductor layer of the second conductivity type which is formed on a part of the surface of the substrate, and a signal output means. The first semiconductor layer of the second conductivity type and the second semiconductor layer of the second conductivity type are formed in different steps so that the first semiconductor layer is disposed deeper than the second semiconductor layer.

摘要翻译： 一种具有多个第一导电类型的用于光电转换的半导体层的固态成像装置，其设置在第二导电类型的第一半导体层的表面上，该第二半导体层形成在半导体衬底的一个表面的一部分上 第一导电型，形成在基板表面的一部分上的第二导电类型的第二半导体层的表面上的用于电荷转移的第一导电类型的半导体层和信号输出装置。 第二导电类型的第一半导体层和第二导电类型的第二半导体层以不同的步骤形成，使得第一半导体层被设置为比第二半导体层更深。

公开(公告)号：US4908684A

公开(公告)日：1990-03-13

申请号：US70552

申请日：1987-07-07

申请人： Norio Koike ,  Toshifumi Ozaki ,  Masaaki Nakai ,  Haruhisa Ando ,  Shinya Ohba ,  Hideyuki Ono ,  Hajime Akimoto ,  Hajime Kinugasa

发明人： Norio Koike ,  Toshifumi Ozaki ,  Masaaki Nakai ,  Haruhisa Ando ,  Shinya Ohba ,  Hideyuki Ono ,  Hajime Akimoto ,  Hajime Kinugasa

IPC分类号： H01L27/146 ,  H01L27/148

CPC分类号： H01L27/14887

摘要： A solid-state imaging device includes a vertical CCD shift register for transferring electric charge. The electrode of the vertical CCD located nearest to the substrate is extended outside of the region of the vertical CCD to a region of a layer where isolation is required. The layer is thus imparted with two functions, that is, the function of the CCD electrode and that of the iolation electrode. An overflow transistor is also provided to discharge excess charge produced by high intensity light.

摘要翻译： 固态成像装置包括用于传送电荷的垂直CCD移位寄存器。 位于最靠近基板的垂直CCD的电极在垂直CCD的区域的外部延伸到需要隔离的层的区域。 因此，该层具有两种功能，即CCD电极和绝缘电极的功能。 还提供溢流晶体管以排出由高强度光产生的过量电荷。

公开(公告)号：US4862487A

公开(公告)日：1989-08-29

申请号：US178197

申请日：1988-04-06

申请人： Haruhisa Ando ,  Masaaki Nakai ,  Hideyuki Ono ,  Toshifumi Ozaki ,  Shinya Ohba ,  Norio Koike

发明人： Haruhisa Ando ,  Masaaki Nakai ,  Hideyuki Ono ,  Toshifumi Ozaki ,  Shinya Ohba ,  Norio Koike

IPC分类号： G11C19/28 ,  G11C27/04 ,  H01L27/148 ,  H04N5/335 ,  H04N5/341 ,  H04N5/353 ,  H04N5/369 ,  H04N5/3728

CPC分类号： H04N3/1525 ,  G11C19/282 ,  G11C27/04 ,  H01L27/14831 ,  H04N3/1556

摘要： Vertical CCD registers constituting parts of an interline type CCD imaging device hold independently the signal charges transferred from photoelectric conversion elements and having different storage durations. Transfer of charge to the vertical CCD registers from the photoelectric conversion element is performed at least twice during one field period. The vertical CCD registers transfer the signal charges of different storage durations independent of one another.

摘要翻译： 构成行间CCD型CCD成像装置的垂直CCD寄存器独立地保持从光电转换元件传送的信号电荷并具有不同的存储持续时间。 从光电转换元件向垂直CCD寄存器的电荷转移至少在一个场期间进行两次。 垂直CCD寄存器将不同存储持续时间的信号电荷彼此独立地传输。

公开(公告)号：US4689687A

公开(公告)日：1987-08-25

申请号：US796752

申请日：1985-11-12

申请人： Norio Koike ,  Masaaki Nakai ,  Haruhisa Ando ,  Toshifumi Ozaki ,  Shinya Ohba ,  Hideyuki Ono ,  Toshiyuki Akiyama

发明人： Norio Koike ,  Masaaki Nakai ,  Haruhisa Ando ,  Toshifumi Ozaki ,  Shinya Ohba ,  Hideyuki Ono ,  Toshiyuki Akiyama

IPC分类号： H01L27/148 ,  H04N5/359 ,  H04N5/3728 ,  H04N3/14

CPC分类号： H01L27/14831 ,  H04N5/3595 ,  H04N5/3728

摘要： A charge transfer type solid-state device incorporating a charge coupled device (CCD). In order to eliminate field after image and smear, at least two electrode pairs are provided in a vertical CCD shift register for transferring the signal charges stored in photoelectric conversion elements, the electrode pairs being disposed within the vertical pitch of the photoelectric conversion elements. P

摘要翻译： 包含电荷耦合器件（CCD）的电荷转移型固态器件。 为了消除图像和污迹后的场，在垂直CCD移位寄存器中提供至少两个电极对，用于传送存储在光电转换元件中的信号电荷，电极对设置在光电转换元件的垂直间距内。

公开(公告)号：US4809075A

公开(公告)日：1989-02-28

申请号：US109319

申请日：1987-10-19

申请人： Hajime Akimoto ,  Toshifumi Ozaki ,  Shinya Ohba

发明人： Hajime Akimoto ,  Toshifumi Ozaki ,  Shinya Ohba

IPC分类号： H01L27/146 ,  H01L27/148 ,  H04N5/335 ,  H04N5/357 ,  H04N5/359 ,  H04N5/363 ,  H04N5/374 ,  H04N5/3745 ,  H04N5/378 ,  H04N3/14

CPC分类号： H04N5/37457 ,  H01L27/14818 ,  H01L27/14831 ,  H04N5/378

摘要： A solid-state imaging device is constructed by integrating a plurality of face plate elements of an imager in the shape of a matrix on a semiconductor substrate. The face plate elements are formed of photodiodes, in which charges corresponding to incident light are accumulated. The charges are converted into currents or voltages by a plurality of amplifying means disposed in the matrix and which are provided adjacent to the photodiodes. The currents or the voltages obtained through conversion are delivered out of the matrix through signal lines. To the signal lines a correlated double sampling circuit is connected, and this curcuit detects a difference in outputs of the amplifying means between a case when the charges of the photodiodes are not present in the input portions of the amplifying means and a case when they are present therein.

摘要翻译： 固态成像装置通过在半导体衬底上集成成像器形状的成像器的多个面板元件而构成。 面板元件由光电二极管形成，其中对应于入射光的电荷被累积。 通过设置在矩阵中并与光电二极管相邻设置的多个放大装置将电荷转换成电流或电压。 通过转换获得的电流或电压通过信号线传送出矩阵。 对于信号线，连接相关的双采样电路，并且该电路在放大装置的输入部分中不存在光电二极管的电荷的情况与它们之间的情况下检测放大装置的输出的差异 在其中存在。

公开(公告)号：US4942474A

公开(公告)日：1990-07-17

申请号：US281220

申请日：1988-12-08

申请人： Hajime Akimoto ,  Shinya Ohba ,  Toshifumi Ozaki

发明人： Hajime Akimoto ,  Shinya Ohba ,  Toshifumi Ozaki

IPC分类号： H04N5/3745

CPC分类号： H04N3/1512

摘要： A solid-state imaging device including a plurality of photoelectric conversion elements (for example, photodiodes) arranged on a semiconductor substrate so as to form a matrix and read-out means for reading out signal charges which are stored in the photodiodes in accordance with incident light, in a predetermined order, is disclosed in which device the read-out means is made up of a plurality of active elements such as a MOS transistor connected to a photodiode, part of the active elements are used as a pixel amplifier for amplifying the signal charge of the photodiode in such a manner that the signal charge is converted into a current or voltage, the output of the pixel amplifier at a time the signal charge of the photodiode is not applied to the input part of the pixel amplifier and the output of the pixel amplifier at a time the signal charge of the photodiode is applied to the input part of the pixel amplifier are separately stored in a pair of storage means, and the outputs of a plurality of pairs of storage means are successively taken out in accordance with a scanning signal.

摘要翻译： 一种固态成像装置，其包括布置在半导体衬底上的多个光电转换元件（例如，光电二极管），以形成矩阵和读出装置，用于根据事件读出存储在光电二极管中的信号电荷 公开了以预定顺序的光，读出装置由多个有源元件（例如连接到光电二极管的MOS晶体管）构成，其中有源元件的一部分用作像素放大器，用于放大 光电二极管的信号电荷使得信号电荷被转换为电流或电压，在光电二极管的信号电荷未被施加到像素放大器的输入部分的时间处的像素放大器的输出和输出 在光电二极管的信号电荷施加到像素放大器的输入部分的时间分别存储在一对存储装置中，并且输出的像素放大器的输出 根据扫描信号依次取出多对存储装置。

公开(公告)号：US4621291A

公开(公告)日：1986-11-04

申请号：US462763

申请日：1983-02-01

申请人： Iwao Takemoto ,  Shinya Ohba ,  Masakazu Aoki ,  Haruhisa Ando ,  Masaaki Nakai ,  Toshifumi Ozaki ,  Takuya Imaide

发明人： Iwao Takemoto ,  Shinya Ohba ,  Masakazu Aoki ,  Haruhisa Ando ,  Masaaki Nakai ,  Toshifumi Ozaki ,  Takuya Imaide

IPC分类号： H01L27/146 ,  H04N5/335 ,  H04N5/341 ,  H04N5/365 ,  H04N5/372 ,  H04N5/374 ,  H04N5/378 ,  H04N3/14

CPC分类号： H04N3/1568

摘要： This invention relates to an area imaging device having an array of picture elements formed of photodiodes and insulated-gate MOSTs which is vertically scanned by a shift register and horizontally scanned by a charge transfer device (CTD). The solid-state imaging device according to this invention has a transfer MOST provided between a vertical signal output line and a horizontal switch MOST, a resetting MOST connected to the junction between said transfer MOST and the horizontal switch MOST, and a mechanism for setting the vertical signal line at a reference potential just before signal transfer. The transfer MOST connected between the junction of the horizontal switch MOST and the resetting MOST and the vertical signal line is a double-gate MOST formed of a series connection of a transfer gate and another transfer gate. Therefore, the charges under the gate of the transfer MOST can be removed for fixed noise to be greatly reduced.

摘要翻译： 本发明涉及一种具有由光电二极管和绝缘栅极MOST形成的像素阵列的区域成像装置，其由移位寄存器垂直扫描并由电荷转移装置（CTD）水平扫描。 根据本发明的固态成像装置具有设置在垂直信号输出线和水平开关MOST之间的转移MOST，连接到所述传输MOST和水平开关MOST之间的连接处的复位MOST，以及用于设置 在信号传输之前的垂直信号线处于参考电位。 连接在水平开关MOST和复位MOST的连接点与垂直信号线之间的传输MOST是由传输门和另一个传输门的串联连接形成的双栅极MOST。 因此，为了降低固定噪声，可以去除传输MOST的栅极下的电荷。

公开(公告)号：US4532549A

公开(公告)日：1985-07-30

申请号：US473865

申请日：1983-03-10

申请人： Toshifumi Ozaki ,  Shinya Ohba ,  Iwao Takemoto ,  Masaaki Nakai ,  Haruhisa Ando ,  Shusaku Nagahara ,  Takuya Imaide ,  Kenji Takahashi ,  Toshiyuki Akiyama

发明人： Toshifumi Ozaki ,  Shinya Ohba ,  Iwao Takemoto ,  Masaaki Nakai ,  Haruhisa Ando ,  Shusaku Nagahara ,  Takuya Imaide ,  Kenji Takahashi ,  Toshiyuki Akiyama

IPC分类号： H01L27/146 ,  H04N5/335 ,  H04N5/341 ,  H04N5/359 ,  H04N5/365 ,  H04N5/369 ,  H04N5/372 ,  H04N5/374 ,  H04N5/378 ,  H04N5/30

CPC分类号： H01L27/14643

摘要： Disclosed is a solid-state imaging device wherein optical information of a number of photo-electric conversion elements arranged in a matrix is read into vertical signal lines by a vertical shift register and then the optical information on the vertical signal lines is horizontally scanned by a horizontal register of a charge transfer device. Bias charge storage means and quasi-signal sweep-out drains are disposed between the horizontal register and the vertical signal lines, and a bias charge input means is arranged in the horizontal register. In order to ensure high efficiency in transferring signals between the vertical lines to the storage means, the sweep-out drains and the charge transfer device, it is arranged for bias charges to be provided at each stage of transfer. Thus, bias charges supplied from the storage means are used to transfer charges from the vertical lines to the storage means. Similarly bias charges directly injected from the quasi-signal sweep-out drains are used to sweep out quasi-signals from the storage means to the quasi-signal sweep-out drains. Finally bias charges supplied from the bias charge input means of the charge transfer device are used to read signals from the storage means into the charge transfer device. By virtue of this, the sweep-out efficiency of the quasi-signals from the capacitances which supply the bias charges and a read-out efficiency of the signal charges are enhanced and a high quality of video signal is produced.

摘要翻译： 公开了一种固态成像装置，其中以矩阵形式布置的多个光电转换元件的光学信息被垂直移位寄存器读入垂直信号线，然后垂直信号线上的光信息被水平扫描 电荷转移装置的水平寄存器。 偏置电荷存储装置和准信号扫除漏极设置在水平寄存器和垂直信号线之间，偏置电荷输入装置布置在水平寄存器中。 为了确保在垂直线之间向存储装置，扫除漏极和电荷转移装置传输信号的高效率，布置为在每个转移阶段提供偏置电荷。 因此，使用从存储装置提供的偏置电荷将电荷从垂直线传送到存储装置。 类似地，从准信号扫除漏极直接注入的偏置电荷用于将准信号从存储装置扫除到准信号扫除漏极。 最后，从电荷转移装置的偏置电荷输入装置提供的偏置电荷用于从存储装置读取信号到电荷转移装置中。 由此，来自提供偏置电荷的电容的准信号的扫除效率和信号电荷的读出效率被增强，并且产生高质量的视频信号。

公开(公告)号：US4443818A

公开(公告)日：1984-04-17

申请号：US329609

申请日：1981-12-10

申请人： Shinya Ohba ,  Masaaki Nakai ,  Toshifumi Ozaki ,  Kenji Takahashi

发明人： Shinya Ohba ,  Masaaki Nakai ,  Toshifumi Ozaki ,  Kenji Takahashi

IPC分类号： H01L27/146 ,  H04N5/335 ,  H04N5/341 ,  H04N5/359 ,  H04N5/369 ,  H04N5/372 ,  H04N3/14 ,  G11C7/06

CPC分类号： H04N3/1512 ,  H01L27/14643 ,  H04N3/1568

摘要： A solid-state imaging device comprises an array of picture elements and a horizontal CTD shift register. In a horizontal blanking period, two or more sets of signals from vertical signal output lines coupled to the picture element array are stored in the horizontal CTD shift register. In a horizontal scanning period, the horizontal CTD shift register operates in a 3-phase (or 4-phase) driving fashion to deliver picture image information signal to its output part.

摘要翻译： 固态成像装置包括像素阵列和水平CTD移位寄存器。 在水平消隐期间，耦合到像素阵列的垂直信号输出线的两组或更多组信号存储在水平CTD移位寄存器中。 在水平扫描周期中，水平CTD移位寄存器以三相（或四相）驱动方式工作，以将图像信息信号传送到其输出部分。

公开(公告)号：US4577231A

公开(公告)日：1986-03-18

申请号：US476415

申请日：1983-03-17

申请人： Shinya Ohba ,  Haruhisa Ando ,  Masaaki Nakai ,  Toshifumi Ozaki ,  Koichi Seki ,  Kenji Takahashi ,  Toshiyuki Akiyama ,  Iwao Takemoto ,  Takuya Imaide ,  Akihide Okuda ,  Masaharu Kubo

发明人： Shinya Ohba ,  Haruhisa Ando ,  Masaaki Nakai ,  Toshifumi Ozaki ,  Koichi Seki ,  Kenji Takahashi ,  Toshiyuki Akiyama ,  Iwao Takemoto ,  Takuya Imaide ,  Akihide Okuda ,  Masaharu Kubo

IPC分类号： H01L27/146 ,  H04N5/335 ,  H04N5/341 ,  H04N5/359 ,  H04N5/365 ,  H04N5/372 ,  H04N3/14

CPC分类号： H04N3/1512 ,  H01L27/14643

摘要： Disclosed is a two-dimensionally arrayed solid-state imaging device for a television camera having a photodiode array arranged at a photo-sensing section and a readout horizontal register constructed by a charge transfer device (CTD) such as a BCD, CCD or BBD. An inverter circuit is provided for each of the vertical signal lines. An input of the inverter circuit is connected to a vertical signal line drain of at least one transfer transistor arranged between the vertical signal line and the CTD, and an output of the inverter circuit is connected to a gate of the transfer transistor. Transfer efficiency is improved by the insertion of the inverter circuit and fixed pattern noise is substantially reduced by supplying bias currents.

摘要翻译： 公开了一种用于电视摄像机的二维阵列固态成像装置，其具有布置在感光部分的光电二极管阵列和由诸如BCD，CCD或BBD的电荷转移装置（CTD）构成的读出水平寄存器。 为每条垂直信号线提供一个反相器电路。 逆变器电路的输入端连接在布置在垂直信号线和CTD之间的至少一个传输晶体管的垂直信号线漏极，反相器电路的输出端连接到转移晶体管的栅极。 通过插入逆变器电路来提高转移效率，并且通过提供偏置电流大大减少固定图案噪声。