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    Solid-state imaging device with high quasi-signal sweep-out efficiency and high signal charge transfer efficiency
    2.
    发明授权
    Solid-state imaging device with high quasi-signal sweep-out efficiency and high signal charge transfer efficiency 失效
    具有高准信号扫频效率和高信号电荷转移效率的固态成像装置

    公开(公告)号：US4532549A

    公开(公告)日：1985-07-30

    申请号：US473865

    申请日：1983-03-10

    申请人： Toshifumi Ozaki ,  Shinya Ohba ,  Iwao Takemoto ,  Masaaki Nakai ,  Haruhisa Ando ,  Shusaku Nagahara ,  Takuya Imaide ,  Kenji Takahashi ,  Toshiyuki Akiyama

    发明人： Toshifumi Ozaki ,  Shinya Ohba ,  Iwao Takemoto ,  Masaaki Nakai ,  Haruhisa Ando ,  Shusaku Nagahara ,  Takuya Imaide ,  Kenji Takahashi ,  Toshiyuki Akiyama

    IPC分类号： H01L27/146 ,  H04N5/335 ,  H04N5/341 ,  H04N5/359 ,  H04N5/365 ,  H04N5/369 ,  H04N5/372 ,  H04N5/374 ,  H04N5/378 ,  H04N5/30

    CPC分类号： H01L27/14643

    摘要： Disclosed is a solid-state imaging device wherein optical information of a number of photo-electric conversion elements arranged in a matrix is read into vertical signal lines by a vertical shift register and then the optical information on the vertical signal lines is horizontally scanned by a horizontal register of a charge transfer device. Bias charge storage means and quasi-signal sweep-out drains are disposed between the horizontal register and the vertical signal lines, and a bias charge input means is arranged in the horizontal register. In order to ensure high efficiency in transferring signals between the vertical lines to the storage means, the sweep-out drains and the charge transfer device, it is arranged for bias charges to be provided at each stage of transfer. Thus, bias charges supplied from the storage means are used to transfer charges from the vertical lines to the storage means. Similarly bias charges directly injected from the quasi-signal sweep-out drains are used to sweep out quasi-signals from the storage means to the quasi-signal sweep-out drains. Finally bias charges supplied from the bias charge input means of the charge transfer device are used to read signals from the storage means into the charge transfer device. By virtue of this, the sweep-out efficiency of the quasi-signals from the capacitances which supply the bias charges and a read-out efficiency of the signal charges are enhanced and a high quality of video signal is produced.

    摘要翻译： 公开了一种固态成像装置，其中以矩阵形式布置的多个光电转换元件的光学信息被垂直移位寄存器读入垂直信号线，然后垂直信号线上的光信息被水平扫描 电荷转移装置的水平寄存器。 偏置电荷存储装置和准信号扫除漏极设置在水平寄存器和垂直信号线之间，偏置电荷输入装置布置在水平寄存器中。 为了确保在垂直线之间向存储装置，扫除漏极和电荷转移装置传输信号的高效率，布置为在每个转移阶段提供偏置电荷。 因此，使用从存储装置提供的偏置电荷将电荷从垂直线传送到存储装置。 类似地，从准信号扫除漏极直接注入的偏置电荷用于将准信号从存储装置扫除到准信号扫除漏极。 最后，从电荷转移装置的偏置电荷输入装置提供的偏置电荷用于从存储装置读取信号到电荷转移装置中。 由此，来自提供偏置电荷的电容的准信号的扫除效率和信号电荷的读出效率被增强，并且产生高质量的视频信号。

    Method of reducing vertical smears of a solid state image sensor
    4.
    发明授权
    Method of reducing vertical smears of a solid state image sensor 失效
    降低固态图像传感器垂直涂片的方法

    公开(公告)号：US4578707A

    公开(公告)日：1986-03-25

    申请号：US662133

    申请日：1984-10-18

    申请人： Naoki Ozawa ,  Toshiyuki Akiyama ,  Shuusaku Nagahara ,  Shinya Ohba ,  Haruhisa Ando ,  Toshifumi Ozaki

    发明人： Naoki Ozawa ,  Toshiyuki Akiyama ,  Shuusaku Nagahara ,  Shinya Ohba ,  Haruhisa Ando ,  Toshifumi Ozaki

    IPC分类号： H04N5/217 ,  H04N3/12

    CPC分类号： H04N5/2175

    摘要： Herein disclosed is a method of reducing the vertical smears which are generated in a solid state image sensor including a plurality of vertical signal lines for transferring signal charges in a vertical direction and at least one charge transfer device for transferring the signal charges in a horizontal direction.The smear charges stored in the vertical signal lines and the signal charges generated in a photoelectric conversion element in response to an incident ray are inputted separately of each other for a horizontal blanking period to the charge transfer device for the horizontal transfer. During a tracing period, a smear voltage and a signal voltage are outputted separately of each other from said charge transfer device. The smear voltage adjusted is subtracted from the signal voltage to eliminate the smear component which has been mixed into the signal voltage.

    摘要翻译： 这里公开了一种减少在包括用于在垂直方向上传送信号电荷的多个垂直信号线的固态图像传感器中产生的垂直涂片的方法，以及用于在水平方向上传送信号电荷的至少一个电荷转移装置 。 存储在垂直信号线中的拖尾电荷和在光电转换元件中产生的响应于入射光线的信号电荷在水平消隐期间彼此分开地输入到用于水平传送的电荷转移装置。 在跟踪期间，污染电压和信号电压彼此分离地从所述电荷转移装置输出。 从信号电压中减去调整的污迹电压，以消除已混入信号电压的污迹分量。

    Solid-state imaging device
    5.
    发明授权
    Solid-state imaging device 失效
    固态成像装置

    公开(公告)号：US4209806A

    公开(公告)日：1980-06-24

    申请号：US928734

    申请日：1978-07-27

    申请人： Norio Koike ,  Iwao Takemoto ,  Toshiyuki Akiyama ,  Haruhisa Ando ,  Shinya Ohba ,  Masatada Horiuchi ,  Masaharu Kubo

    发明人： Norio Koike ,  Iwao Takemoto ,  Toshiyuki Akiyama ,  Haruhisa Ando ,  Shinya Ohba ,  Masatada Horiuchi ,  Masaharu Kubo

    IPC分类号： H01L27/088 ,  H01L27/146 ,  H04N5/335 ,  H04N5/341 ,  H04N5/359 ,  H04N5/372 ,  H04N5/374 ,  H04N3/14 ,  H01L27/14 ,  H01L29/78

    CPC分类号： H01L27/14643 ,  H01L27/088

    摘要： In a solid-state imaging device wherein a plurality of photoelectric conversion elements, horizontal and vertical scanning circuits for addressing the photoelectric conversion elements, and horizontal and vertical switching transistors are comprised in a major surface region of an N (or P)-type semiconductor body, a solid-state imaging device characterized in that a plurality of P (or N)-type impurity layers isolated from one another are disposed in the major surface region of the semiconductor body, that the switching transistors and the photoelectric conversion elements are integrated in one of the impurity layers, the horizontal scanning circuit being integrated in another impurity layer, the vertical scanning circuit being integrated in still another impurity layer, and that predetermined voltages are applied to electrodes disposed on the respective impurity layers.

    摘要翻译： 在其中多个光电转换元件，用于寻址光电转换元件的水平和垂直扫描电路以及水平和垂直开关晶体管的固态成像器件包括在N（或P）型半导体的主表面区域中 其特征在于，在所述半导体主体的主表面区域设置有彼此隔离的多个P（或N）型杂质层，所述开关晶体管和所述光电转换元件被集成 在一个杂质层中，水平扫描电路集成在另一个杂质层中，垂直扫描电路集成在另一个杂质层中，并且预定电压施加到设置在各个杂质层上的电极。

    Solid state imaging device and method with row-by-row charge transfer
    8.
    发明授权
    Solid state imaging device and method with row-by-row charge transfer 失效
    固态成像装置和逐行电荷转移方法

    公开(公告)号：US4675887A

    公开(公告)日：1987-06-23

    申请号：US736259

    申请日：1985-05-21

    申请人： Toshiyuki Akiyama ,  Norio Koike ,  Kenji Ito ,  Takeshi Ogino ,  Shuusaku Nagahara

    发明人： Toshiyuki Akiyama ,  Norio Koike ,  Kenji Ito ,  Takeshi Ogino ,  Shuusaku Nagahara

    IPC分类号： H01L27/14 ,  H01L27/148 ,  H04N5/335 ,  H04N5/341 ,  H04N5/355 ,  H04N5/359 ,  H04N5/3728 ,  H04N5/374 ,  G11C19/28 ,  H01L29/78 ,  H01L31/00

    CPC分类号： H04N3/1568

    摘要： A solid stage imaging device, in which photodiodes each capable of converting incident light into a electric charge and accumulating the electric charge are arranged regularly in a matrix, e.g. in horizontal and vertical directions, and electric charges of the photodiodes are sent to the outside by means of CCD's, includes a scanning circuit which scans switching MOS transistors for transferring the electric charges of the photodiodes to vertical CCD's, in a vertical direction so that switching MOS transistors in a row parallel to a horizontal direction can be driven independently of switching MOS transistors in another row. When the solid state imaging device is driven, an operation for transferring an electric charge in each vertical CCD and an operation for driving switching MOS transistors in the next row with the aid of the scanning circuit are alternately performed, to reduce the amount of smear and to increase the dynamic range of each vertical CCD, without increasing the number of CCD's used.

    摘要翻译： 一种固体级成像装置，其中将能够将入射光转换成电荷并累积电荷的光电二极管规则地布置在矩阵中，例如， 在水平和垂直方向上，光电二极管的电荷通过CCD发送到外部，包括扫描电路，扫描开关MOS晶体管，用于沿垂直方向扫描光电二极管的电荷到垂直CCD，以便切换 与水平方向平行的MOS晶体管可以独立于另一行中的开关MOS晶体管而被驱动。 当固态成像装置被驱动时，交替执行用于在每个垂直CCD中传送电荷的操作和用于驱动下一行中的开关MOS晶体管的操作，以减少涂抹量和 增加每个垂直CCD的动态范围，而不增加CCD使用的数量。