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    Solid-state imaging device with high quasi-signal sweep-out efficiency and high signal charge transfer efficiency
    1.
    发明授权
    Solid-state imaging device with high quasi-signal sweep-out efficiency and high signal charge transfer efficiency 失效
    具有高准信号扫频效率和高信号电荷转移效率的固态成像装置

    公开(公告)号：US4532549A

    公开(公告)日：1985-07-30

    申请号：US473865

    申请日：1983-03-10

    申请人： Toshifumi Ozaki ,  Shinya Ohba ,  Iwao Takemoto ,  Masaaki Nakai ,  Haruhisa Ando ,  Shusaku Nagahara ,  Takuya Imaide ,  Kenji Takahashi ,  Toshiyuki Akiyama

    发明人： Toshifumi Ozaki ,  Shinya Ohba ,  Iwao Takemoto ,  Masaaki Nakai ,  Haruhisa Ando ,  Shusaku Nagahara ,  Takuya Imaide ,  Kenji Takahashi ,  Toshiyuki Akiyama

    IPC分类号： H01L27/146 ,  H04N5/335 ,  H04N5/341 ,  H04N5/359 ,  H04N5/365 ,  H04N5/369 ,  H04N5/372 ,  H04N5/374 ,  H04N5/378 ,  H04N5/30

    CPC分类号： H01L27/14643

    摘要： Disclosed is a solid-state imaging device wherein optical information of a number of photo-electric conversion elements arranged in a matrix is read into vertical signal lines by a vertical shift register and then the optical information on the vertical signal lines is horizontally scanned by a horizontal register of a charge transfer device. Bias charge storage means and quasi-signal sweep-out drains are disposed between the horizontal register and the vertical signal lines, and a bias charge input means is arranged in the horizontal register. In order to ensure high efficiency in transferring signals between the vertical lines to the storage means, the sweep-out drains and the charge transfer device, it is arranged for bias charges to be provided at each stage of transfer. Thus, bias charges supplied from the storage means are used to transfer charges from the vertical lines to the storage means. Similarly bias charges directly injected from the quasi-signal sweep-out drains are used to sweep out quasi-signals from the storage means to the quasi-signal sweep-out drains. Finally bias charges supplied from the bias charge input means of the charge transfer device are used to read signals from the storage means into the charge transfer device. By virtue of this, the sweep-out efficiency of the quasi-signals from the capacitances which supply the bias charges and a read-out efficiency of the signal charges are enhanced and a high quality of video signal is produced.

    摘要翻译： 公开了一种固态成像装置，其中以矩阵形式布置的多个光电转换元件的光学信息被垂直移位寄存器读入垂直信号线，然后垂直信号线上的光信息被水平扫描 电荷转移装置的水平寄存器。 偏置电荷存储装置和准信号扫除漏极设置在水平寄存器和垂直信号线之间，偏置电荷输入装置布置在水平寄存器中。 为了确保在垂直线之间向存储装置，扫除漏极和电荷转移装置传输信号的高效率，布置为在每个转移阶段提供偏置电荷。 因此，使用从存储装置提供的偏置电荷将电荷从垂直线传送到存储装置。 类似地，从准信号扫除漏极直接注入的偏置电荷用于将准信号从存储装置扫除到准信号扫除漏极。 最后，从电荷转移装置的偏置电荷输入装置提供的偏置电荷用于从存储装置读取信号到电荷转移装置中。 由此，来自提供偏置电荷的电容的准信号的扫除效率和信号电荷的读出效率被增强，并且产生高质量的视频信号。

    Solid-state imaging device
    2.
    发明授权
    Solid-state imaging device 失效
    固态成像装置

    公开(公告)号：US4443818A

    公开(公告)日：1984-04-17

    申请号：US329609

    申请日：1981-12-10

    申请人： Shinya Ohba ,  Masaaki Nakai ,  Toshifumi Ozaki ,  Kenji Takahashi

    发明人： Shinya Ohba ,  Masaaki Nakai ,  Toshifumi Ozaki ,  Kenji Takahashi

    IPC分类号： H01L27/146 ,  H04N5/335 ,  H04N5/341 ,  H04N5/359 ,  H04N5/369 ,  H04N5/372 ,  H04N3/14 ,  G11C7/06

    CPC分类号： H04N3/1512 ,  H01L27/14643 ,  H04N3/1568

    摘要： A solid-state imaging device comprises an array of picture elements and a horizontal CTD shift register. In a horizontal blanking period, two or more sets of signals from vertical signal output lines coupled to the picture element array are stored in the horizontal CTD shift register. In a horizontal scanning period, the horizontal CTD shift register operates in a 3-phase (or 4-phase) driving fashion to deliver picture image information signal to its output part.

    摘要翻译： 固态成像装置包括像素阵列和水平CTD移位寄存器。 在水平消隐期间，耦合到像素阵列的垂直信号输出线的两组或更多组信号存储在水平CTD移位寄存器中。 在水平扫描周期中，水平CTD移位寄存器以三相（或四相）驱动方式工作，以将图像信息信号传送到其输出部分。

    Solid-state imaging device
    5.
    发明授权
    Solid-state imaging device 失效
    固态成像装置

    公开(公告)号：US4621291A

    公开(公告)日：1986-11-04

    申请号：US462763

    申请日：1983-02-01

    申请人： Iwao Takemoto ,  Shinya Ohba ,  Masakazu Aoki ,  Haruhisa Ando ,  Masaaki Nakai ,  Toshifumi Ozaki ,  Takuya Imaide

    发明人： Iwao Takemoto ,  Shinya Ohba ,  Masakazu Aoki ,  Haruhisa Ando ,  Masaaki Nakai ,  Toshifumi Ozaki ,  Takuya Imaide

    IPC分类号： H01L27/146 ,  H04N5/335 ,  H04N5/341 ,  H04N5/365 ,  H04N5/372 ,  H04N5/374 ,  H04N5/378 ,  H04N3/14

    CPC分类号： H04N3/1568

    摘要： This invention relates to an area imaging device having an array of picture elements formed of photodiodes and insulated-gate MOSTs which is vertically scanned by a shift register and horizontally scanned by a charge transfer device (CTD). The solid-state imaging device according to this invention has a transfer MOST provided between a vertical signal output line and a horizontal switch MOST, a resetting MOST connected to the junction between said transfer MOST and the horizontal switch MOST, and a mechanism for setting the vertical signal line at a reference potential just before signal transfer. The transfer MOST connected between the junction of the horizontal switch MOST and the resetting MOST and the vertical signal line is a double-gate MOST formed of a series connection of a transfer gate and another transfer gate. Therefore, the charges under the gate of the transfer MOST can be removed for fixed noise to be greatly reduced.

    摘要翻译： 本发明涉及一种具有由光电二极管和绝缘栅极MOST形成的像素阵列的区域成像装置，其由移位寄存器垂直扫描并由电荷转移装置（CTD）水平扫描。 根据本发明的固态成像装置具有设置在垂直信号输出线和水平开关MOST之间的转移MOST，连接到所述传输MOST和水平开关MOST之间的连接处的复位MOST，以及用于设置 在信号传输之前的垂直信号线处于参考电位。 连接在水平开关MOST和复位MOST的连接点与垂直信号线之间的传输MOST是由传输门和另一个传输门的串联连接形成的双栅极MOST。 因此，为了降低固定噪声，可以去除传输MOST的栅极下的电荷。

    Solid-state imaging device
    6.
    发明授权
    Solid-state imaging device 失效
    固态成像装置

    公开(公告)号：US4814848A

    公开(公告)日：1989-03-21

    申请号：US58825

    申请日：1987-06-05

    申请人： Hajime Akimoto ,  Harushisa Ando ,  Toshifumi Ozaki ,  Hideyuki Ono ,  Shinya Ohba ,  Masaaki Nakai ,  Norio Koike

    发明人： Hajime Akimoto ,  Harushisa Ando ,  Toshifumi Ozaki ,  Hideyuki Ono ,  Shinya Ohba ,  Masaaki Nakai ,  Norio Koike

    IPC分类号： H01L27/146 ,  H01L27/148 ,  H01L29/78 ,  H01L27/14 ,  H01L29/06

    CPC分类号： H01L27/14887

    摘要： A solid-state imaging device having a plurality of semiconductor layers of a first conductivity type for photo-electric conversion provided on the surface of a first semiconductor layer of a second conductivity type which is formed on a part of one surface of a semiconductor substrate of the first conductivity type, a semiconductor layer of the first conductivity type for charge transfer provided on the surface of a second semiconductor layer of the second conductivity type which is formed on a part of the surface of the substrate, and a signal output means. The first semiconductor layer of the second conductivity type and the second semiconductor layer of the second conductivity type are formed in different steps so that the first semiconductor layer is disposed deeper than the second semiconductor layer.

    摘要翻译： 一种具有多个第一导电类型的用于光电转换的半导体层的固态成像装置，其设置在第二导电类型的第一半导体层的表面上，该第二半导体层形成在半导体衬底的一个表面的一部分上 第一导电型，形成在基板表面的一部分上的第二导电类型的第二半导体层的表面上的用于电荷转移的第一导电类型的半导体层和信号输出装置。 第二导电类型的第一半导体层和第二导电类型的第二半导体层以不同的步骤形成，使得第一半导体层被设置为比第二半导体层更深。