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1.发明申请PHOTOMASK USING SEPARATED EXPOSURE TECHNIQUE, METHOD OF FABRICATING PHOTOMASK, AND APPARATUS FOR FABRICATING PHOTOMASK BY USING THE METHOD 审中-公开使用分离曝光技术的光电子产品，制造光致发光材料的方法，以及使用该方法制造光电子产品的装置公开(公告)号：US20110244376A1
公开(公告)日：2011-10-06
申请号：US13102836
申请日：2011-05-06
申请人： Hak-seung HAN , Seong-woon Choi , Byung-gook Kim , Hee-bom Kim , Sung-ho Park
发明人： Hak-seung HAN , Seong-woon Choi , Byung-gook Kim , Hee-bom Kim , Sung-ho Park
摘要： A method of fabricating a photomask may include forming a light-shielding layer and a first resist film on a substrate, forming a first resist pattern by exposing first exposed regions of the first resist film to a first exposure source that may have a first energy, forming a first light shielding pattern by etching the selectively exposed light-shielding layer by using the first resist pattern as an etching mask, removing the first resist pattern, forming a second resist film on the first light-shielding layer, exposing second exposed regions of the second resist film that may have a desired pattern shape to a second exposure source that may have a second energy, forming a second light shielding pattern by etching the selectively exposed first light shielding pattern by using the second resist pattern as an etching mask, and removing the second resist pattern.
摘要翻译： 制造光掩模的方法可以包括在基板上形成遮光层和第一抗蚀剂膜，通过将第一抗蚀剂膜的第一曝光区域暴露于可能具有第一能量的第一曝光源形成第一抗蚀剂图案， 通过使用第一抗蚀剂图案作为蚀刻掩模蚀刻选择性地暴露的遮光层来形成第一遮光图案，去除第一抗蚀剂图案，在第一遮光层上形成第二抗蚀剂膜，暴露第二曝光区域 可以具有期望的图案形状的第二抗蚀剂膜可以具有可以具有第二能量的第二曝光源，通过使用第二抗蚀剂图案作为蚀刻掩模蚀刻选择性地暴露的第一遮光图案来形成第二遮光图案;以及 去除第二抗蚀剂图案。
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2.发明授权Photomask using separated exposure technique, method of fabricating photomask, and apparatus for fabricating photomask by using the method 失效使用分离曝光技术的光掩模，光掩模的制造方法以及使用该方法制造光掩模的装置公开(公告)号：US07939223B2
公开(公告)日：2011-05-10
申请号：US11730454
申请日：2007-04-02
申请人： Hak-seung Han , Seong-woon Choi , Byung-gook Kim , Hee-bom Kim , Sung-ho Park
发明人： Hak-seung Han , Seong-woon Choi , Byung-gook Kim , Hee-bom Kim , Sung-ho Park
IPC分类号： G03F1/00
摘要： A method of fabricating a photomask may include forming a light-shielding layer and a first resist film on a substrate, forming a first resist pattern by exposing first exposed regions of the first resist film to a first exposure source that may have a first energy, forming a first light shielding pattern by etching the selectively exposed light-shielding layer by using the first resist pattern as an etching mask, removing the first resist pattern, forming a second resist film on the first light-shielding layer, exposing second exposed regions of the second resist film that may have a desired pattern shape to a second exposure source that may have a second energy, forming a second light shielding pattern by etching the selectively exposed first light shielding pattern by using the second resist pattern as an etching mask, and removing the second resist pattern.
摘要翻译： 制造光掩模的方法可以包括在基板上形成遮光层和第一抗蚀剂膜，通过将第一抗蚀剂膜的第一曝光区域暴露于可能具有第一能量的第一曝光源形成第一抗蚀剂图案， 通过使用第一抗蚀剂图案作为蚀刻掩模蚀刻选择性地暴露的遮光层来形成第一遮光图案，去除第一抗蚀剂图案，在第一遮光层上形成第二抗蚀剂膜，暴露第二曝光区域 可以具有期望的图案形状的第二抗蚀剂膜可以具有可以具有第二能量的第二曝光源，通过使用第二抗蚀剂图案作为蚀刻掩模蚀刻选择性地暴露的第一遮光图案来形成第二遮光图案;以及 去除第二抗蚀剂图案。
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3.发明申请Photomask using separated exposure technique, method of fabricating photomask, and apparatus for fabricating photomask by using the method 失效使用分离曝光技术的光掩模，光掩模的制造方法以及使用该方法制造光掩模的装置公开(公告)号：US20070231715A1
公开(公告)日：2007-10-04
申请号：US11730454
申请日：2007-04-02
申请人： Hak-seung Han , Seong-woon Choi , Byung-gook Kim , Hee-bom Kim , Sung-ho Park
发明人： Hak-seung Han , Seong-woon Choi , Byung-gook Kim , Hee-bom Kim , Sung-ho Park
摘要： A method of fabricating a photomask may include forming a light-shielding layer and a first resist film on a substrate, forming a first resist pattern by exposing first exposed regions of the first resist film to a first exposure source that may have a first energy, forming a first, light shielding pattern by etching the selectively exposed light-shielding layer by using the first resist pattern as an etching mask, removing the first resist pattern, forming a second resist film on the first light-shielding layer, exposing second exposed regions of the second resist film that may have a desired pattern shape to a second exposure source that may have a second energy, forming a second light shielding pattern by etching the selectively exposed first light shielding pattern by using the second resist pattern as an etching mask, and removing the second resist pattern.
摘要翻译： 制造光掩模的方法可以包括在基板上形成遮光层和第一抗蚀剂膜，通过将第一抗蚀剂膜的第一曝光区域暴露于可能具有第一能量的第一曝光源形成第一抗蚀剂图案， 通过使用第一抗蚀剂图案作为蚀刻掩模蚀刻选择性地暴露的遮光层来形成第一遮光图案，去除第一抗蚀剂图案，在第一遮光层上形成第二抗蚀剂膜，暴露第二曝光区域 可以具有期望的图案形状的第二抗蚀剂膜可以具有可以具有第二能量的第二曝光源，通过使用第二抗蚀剂图案作为蚀刻掩模来蚀刻选择性地暴露的第一遮光图案来形成第二遮光图案， 并移除第二抗蚀剂图案。
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4.发明申请公开(公告)号：US20120058432A1
公开(公告)日：2012-03-08
申请号：US13219579
申请日：2011-08-26
申请人： Jin Choi , Byung-gook Kim , Hee-bom Kim , Sang-hee Lee
发明人： Jin Choi , Byung-gook Kim , Hee-bom Kim , Sang-hee Lee
IPC分类号： G03F7/20
摘要： A method of forming a semiconductor device can include determining a shot set including a plurality of shots, based on a final pattern used to form a mask. Shots included in the plurality shots can be classified as being in a first pass shot set or in a second pass shot set, where each can include a plurality of non-directly neighboring shots. A first pass exposure can be performed to radiate a reticle to provide the first pass shot set and a second pass exposure can be performed to radiate the reticle to provide the second pass shot set.
摘要翻译： 形成半导体器件的方法可以包括基于用于形成掩模的最终图案来确定包括多个镜头的镜头组。 包括在多个镜头中的拍摄可以被分类为处于第一传球镜头或第二镜头组中的每一个，其中每个镜头可以包括多个非直接相邻镜头。 可以执行第一遍曝光以辐射掩模版以提供第一遍照射设置，并且可以执行第二曝光曝光以辐射掩模版以提供第二遍照射设置。
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公开(公告)号：US20050140988A1
公开(公告)日：2005-06-30
申请号：US10919367
申请日：2004-08-17
申请人： Dong-gun Lee , Seong-woon Choi , Seong-yong Moon , Byung-gook Kim , Min-ah Kim
发明人： Dong-gun Lee , Seong-woon Choi , Seong-yong Moon , Byung-gook Kim , Min-ah Kim
CPC分类号： G03F7/70625 , G01B11/02
摘要： An OCD measurement equipment, including a tunable laser system, and a method of measuring the CD of patterns formed on a substrate. A light source optical system emits light which wavelength changes over time. A projector optical system projects the light emitted from the light source optical system on the substrate. A substrate support unit supports the substrate. An image relay optical system relays light reflected by the substrate. An image detection optical system detects the light relayed by the image relay optical system using a detector which detects the spatial distribution of the light.
摘要翻译： 包括可调谐激光系统的OCD测量设备以及测量形成在基板上的图案的CD的方法。 光源光学系统发射波长随时间变化的光。 投影仪光学系统将从光源光学系统发射的光投影到基板上。 基板支撑单元支撑基板。 图像中继光学系统中继由基板反射的光。 图像检测光学系统使用检测光的空间分布的检测器来检测由图像中继光学系统中继的光。
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6.发明授权Methods of forming semiconductor devices using photolithographic shot grouping 有权使用光刻射击分组形成半导体器件的方法公开(公告)号：US08475980B2
公开(公告)日：2013-07-02
申请号：US13219579
申请日：2011-08-26
申请人： Jin Choi , Byung-gook Kim , Hee-bom Kim , Sang-hee Lee
发明人： Jin Choi , Byung-gook Kim , Hee-bom Kim , Sang-hee Lee
摘要： A method of forming a semiconductor device can include determining a shot set including a plurality of shots, based on a final pattern used to form a mask. Shots included in the plurality shots can be classified as being in a first pass shot set or in a second pass shot set, where each can include a plurality of non-directly neighboring shots. A first pass exposure can be performed to radiate a reticle to provide the first pass shot set and a second pass exposure can be performed to radiate the reticle to provide the second pass shot set.
摘要翻译： 形成半导体器件的方法可以包括基于用于形成掩模的最终图案来确定包括多个镜头的镜头组。 包括在多个镜头中的拍摄可以被分类为处于第一传球镜头或第二镜头组中的每一个，其中每个镜头可以包括多个非直接相邻镜头。 可以执行第一遍曝光以辐射掩模版以提供第一遍照射设置，并且可以执行第二曝光曝光以辐射掩模版以提供第二遍照射设置。
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公开(公告)号：US20090059197A1
公开(公告)日：2009-03-05
申请号：US12230239
申请日：2008-08-26
申请人： Dong-seok Nam , Byung-gook Kim , Seong-woon Choi
发明人： Dong-seok Nam , Byung-gook Kim , Seong-woon Choi
IPC分类号： G03B27/72
CPC分类号： G03F7/70191 , G03F7/70116 , G03F7/70625
摘要： An exposure apparatus includes a light source adapted to emit light, a photomask in a path of the light between the light source and a semiconductor substrate, the photomask being in a mask plane (MP) and having patterns to be transcribed onto the semiconductor substrate, and a spatial light modulator (SLM) in a first image correction region of the photomask between the light source and the photomask, the SLM being adapted to adjust a distribution of intensity of the light.
摘要翻译： 曝光装置包括适于发光的光源，在光源和半导体衬底之间的光路径中的光掩模，光掩模在掩模平面（MP）中并且具有要转录到半导体衬底上的图案， 以及在光源和光掩模之间的光掩模的第一图像校正区域中的空间光调制器（SLM），SLM适于调节光的强度分布。
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公开(公告)号：US09817309B2
公开(公告)日：2017-11-14
申请号：US14700175
申请日：2015-04-30
申请人： Jung-hwan Lee , Byung-gook Kim , Sang-hyeon Lee
发明人： Jung-hwan Lee , Byung-gook Kim , Sang-hyeon Lee
摘要： Provided are photomasks, methods of fabricating the photomasks, and methods of fabricating a semiconductor device by using the photomasks, in which a critical dimension (CD) of a pattern of a specific region of the photomask is corrected to improve the distribution of CDs of the pattern formed on a wafer. The photomasks may include a substrate and a light-blocking pattern formed on the substrate that includes an absorber layer and an anti-reflection coating (ARC) layer. The light-blocking pattern may include at least one of a first corrected area in which a top surface of the absorber layer is exposed, and a second corrected area in which a correction layer is formed on the ARC layer.
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9.发明申请Photomasks, Methods of Fabricating the Photomasks, and Method of Fabricating Semiconductor Devices by Using the Photomasks 有权光掩模，光掩模的制造方法以及使用光掩模制造半导体器件的方法公开(公告)号：US20160048073A1
公开(公告)日：2016-02-18
申请号：US14700175
申请日：2015-04-30
申请人： Jung-hwan Lee , Byung-gook Kim , Sang-hyeon Lee
发明人： Jung-hwan Lee , Byung-gook Kim , Sang-hyeon Lee
摘要： Provided are photomasks, methods of fabricating the photomasks, and methods of fabricating a semiconductor device by using the photomasks, in which a critical dimension (CD) of a pattern of a specific region of the photomask is corrected to improve the distribution of CDs of the pattern formed on a wafer. The photomasks may include a substrate and a light-blocking pattern formed on the substrate that includes an absorber layer and an anti-reflection coating (ARC) layer. The light-blocking pattern may include at least one of a first corrected area in which a top surface of the absorber layer is exposed, and a second corrected area in which a correction layer is formed on the ARC layer.
摘要翻译： 提供光掩模，制造光掩模的方法以及通过使用光掩模制造半导体器件的方法，其中校正光掩模的特定区域的图案的临界尺寸（CD）以改善光掩模的CD的分布 图案形成在晶片上。 光掩模可以包括衬底和形成在衬底上的遮光图案，其包括吸收层和抗反射涂层（ARC）层。 遮光图案可以包括其中暴露吸收层的顶表面的第一校正区域和其中在ARC层上形成校正层的第二校正区域中的至少一个。
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公开(公告)号：US08817234B2
公开(公告)日：2014-08-26
申请号：US13180776
申请日：2011-07-12
申请人： Jin Choi , Byung-gook Kim
发明人： Jin Choi , Byung-gook Kim
CPC分类号： G02B3/0062 , G02B3/0056 , G02B5/1885 , G02B27/0905 , G02B27/0944 , G02B27/425 , G02B27/4277 , G02B27/50 , G02F1/29 , G02F1/31 , G03F7/70208 , G03F7/70275
摘要： An optical device for splitting a single beam to a plurality of beams and an exposure apparatus including the optical device are disclosed. The optical device includes a first DOE lens array including a plurality of first diffractive optical element (DOE) lenses that are two-dimensionally arranged on a first plane and a second lens array including a plurality of second DOE lenses arranged on a second plane parallel to the first plane so as to respectively correspond to the plurality of first DOE lenses. The first DOE lens array splits a first parallel beam into a plurality of second beams by condensing the first parallel beam and the second DOE lens array modifies the plurality of second beams into a plurality of third beams.
摘要翻译： 公开了一种用于将单个光束分割成多个光束的光学装置和包括该光学装置的曝光装置。 光学装置包括第一DOE透镜阵列，其包括二维地布置在第一平面上的多个第一衍射光学元件（DOE）透镜和第二透镜阵列，所述第二透镜阵列包括布置在平行于第二平面的第二平面上的多个第二DOE透镜 第一平面，以分别对应于多个第一DOE透镜。 第一DOE透镜阵列通过聚焦第一平行光束将第一平行光束分成多个第二光束，并且第二DOE透镜阵列将多个第二光束修改成多个第三光束。
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