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    METHOD FOR MANUFACTURING BACK-THINNED SOLID-STATE IMAGING DEVICE
    1.
    发明申请
    METHOD FOR MANUFACTURING BACK-THINNED SOLID-STATE IMAGING DEVICE 有权

    公开(公告)号：US20230045038A1

    公开(公告)日：2023-02-09

    申请号：US17792799

    申请日：2021-01-19

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Koei YAMAMOTO ,  Tatsuki KASUYA ,  Kazuhiro TANIZAKI ,  Yoshiyuki SUZUKI

    IPC: H01L27/146

    Abstract: A method for manufacturing a back-illuminated solid-state imaging device includes a first step of preparing a first conduction-type semiconductor layer having a front surface and a back surface, a second step of forming a first asperity region on the front surface of the semiconductor layer by selectively etching the front surface of the semiconductor layer, a third step of forming a second asperity region on the front surface of the semiconductor layer by smoothening asperities of the first asperity region, and a fourth step of forming an insulating layer along the second asperity region and forming a plurality of charge transfer electrodes on the insulating layer.

    DEVICE FOR READING RADIOLOGICAL IMAGES
    3.
    发明申请
    DEVICE FOR READING RADIOLOGICAL IMAGES 有权
    阅读放射学图像的设备

    公开(公告)号：US20160139278A1

    公开(公告)日：2016-05-19

    申请号：US14900710

    申请日：2014-06-10

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Koei YAMAMOTO ,  Toshihiro OIKAWA ,  Hiroki SUZUKI ,  Yuichi MIYAMOTO ,  Naoto SAKURAI

    IPC: G01T1/20

    CPC classification number: G01T1/2014 ,  A61B6/42 ,  A61B6/54 ,  G01T1/208 ,  G03B42/02

    Abstract: A radiological image reading device includes a MEMS mirror that scan a recording medium on which a radiological image is recorded with excitation light; a light detecting element that includes a plurality of channels, each channel including a photodiode array, and detects light emitted from an irradiation position of the excitation light on the recording medium; a MEMS mirror driving circuit that determines as a light detection channel to detect the light, a channel corresponding to the irradiation position of the excitation light, out of the plurality of channels; and a reading circuit that reads the detection result of the light from the channel determined by the MEMS mirror driving circuit.

    Abstract translation: 放射学图像读取装置包括扫描利用激发光记录放射性图像的记录介质的MEMS反射镜; 光检测元件，其包括多个通道，每个通道包括光电二极管阵列，并且检测从记录介质上的激发光的照射位置发射的光; MEMS反射镜驱动电路，其确定为多个通道中的用于检测与所述激发光的照射位置相对应的光的光检测通道; 以及读取电路，其从由MEMS镜驱动电路确定的通道读取光的检测结果。

    ULTRAVIOLET SENSOR AND ULTRAVIOLET DETECTING DEVICE
    4.
    发明申请
    ULTRAVIOLET SENSOR AND ULTRAVIOLET DETECTING DEVICE 有权
    超紫外线传感器和超紫外检测器件

    公开(公告)号：US20160086989A1

    公开(公告)日：2016-03-24

    申请号：US14855968

    申请日：2015-09-16

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Koei YAMAMOTO ,  Kenzo HAYATSU ,  Terumasa NAGANO ,  Yuki OKUWA ,  Ryuta YAMADA

    IPC: H01L27/146 ,  H01L31/107 ,  H01L31/028

    CPC classification number: H01L31/107 ,  H01L27/14603 ,  H01L27/14618 ,  H01L27/14625 ,  H01L27/14636 ,  H01L27/14643 ,  H01L31/028 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/16195 ,  H01L2924/00014

    Abstract: An ultraviolet sensor includes a silicon photodiode array having a plurality of first pixel regions and a plurality of second pixel regions. A filter film is disposed on each of the first pixel regions so as to cover each first pixel region, except on each second pixel region. The filter film lowers transmittance in a detection target wavelength range in the ultraviolet region. Each of each first pixel region and each second pixel region includes at least one pixel having an avalanche photodiode to operate in Geiger mode, and a quenching resistor connected in series to the avalanche photodiode. Each of the quenching resistors in the plurality of first pixel regions is connected through a first signal line to a first output terminal. Each of the quenching resistors in the plurality of second pixel regions is connected through a second signal line to a second output terminal.

    Abstract translation: 紫外线传感器包括具有多个第一像素区域和多个第二像素区域的硅光电二极管阵列。 除了每个第二像素区域之外，在每个第一像素区域上设置滤光膜以覆盖每个第一像素区域。 滤光膜降低紫外线区域的检测对象波长范围的透射率。 每个第一像素区域和每个第二像素区域中的每一个包括至少一个具有雪崩光电二极管以Geiger模式操作的像素，以及与雪崩光电二极管串联连接的淬灭电阻器。 多个第一像素区域中的每个淬火电阻器通过第一信号线连接到第一输出端子。 多个第二像素区域中的每个淬灭电阻器通过第二信号线连接到第二输出端子。

    OPTICAL SENSOR
    5.
    发明申请
    OPTICAL SENSOR 审中-公开
    光传感器

    公开(公告)号：US20170047470A1

    公开(公告)日：2017-02-16

    申请号：US15305371

    申请日：2015-04-23

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Koei YAMAMOTO ,  Hiroshi OKAMOTO ,  Masaomi TAKASAKA ,  Yuki OKUWA ,  Shinya IWASHINA

    IPC: H01L31/16 ,  H01L31/0232 ,  H01L33/60

    CPC classification number: H01L31/165 ,  G01C2009/066 ,  H01L31/02325 ,  H01L33/60

    Abstract: An optical sensor includes: a light emitting element 40; a lower substrate 20 on which the light emitting element 40 is provided; an upper substrate 10 provided so that the light emitting element 40 is positioned between the upper substrate 10 and the lower substrate 20; and an optical block 30 provided on the upper substrate 10. The upper substrate 10 includes a division-type photodiode SD. The optical block 30 is configured to reflect light emitted from the light emitting element 40 toward a measurement target R, and light reflected by the measurement target R is incident onto the division-type photodiode SD.

    Abstract translation: 光学传感器包括：发光元件40; 设置有发光元件40的下基板20; 设置为使得发光元件40位于上基板10和下基板20之间的上基板10; 以及设置在上基板10上的光学块30.上基板10包括分割型光电二极管SD。 光学块30被配置为将从发光元件40发射的光朝向测量对象R反射，并且由测量对象R反射的光入射到分割型光电二极管SD上。

    SEMICONDUCTOR LIGHT-DETECTING ELEMENT
    7.
    发明申请
    SEMICONDUCTOR LIGHT-DETECTING ELEMENT 审中-公开
    半导体光检测元件

    公开(公告)号：US20140061835A1

    公开(公告)日：2014-03-06

    申请号：US14073249

    申请日：2013-11-06

    Applicant: Hamamatsu Photonics K.K.

    Inventor： Akira SAKAMOTO ,  Takashi IIDA ,  Koei YAMAMOTO ,  Kazuhisa YAMAMURA ,  Terumasa NAGANO

    IPC: H01L31/0236

    CPC classification number: H01L31/02366 ,  H01L27/1446 ,  H01L31/0236 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    Abstract: Prepared is an n− type semiconductor substrate 1 having a first principal surface 1a and a second principal surface 1b opposed to each other, and having a p+ type semiconductor region 3 formed on the first principal surface 1a side. At least a region opposed to the p+ type semiconductor region 3 in the second principal surface 1b of the n− type semiconductor substrate 1 is irradiated with a pulsed laser beam to form an irregular asperity 10. After formation of the irregular asperity 10, an accumulation layer 11 with an impurity concentration higher than that of the n− type semiconductor substrate 1 is formed on the second principal surface 1b side of the n− type semiconductor substrate 1. After formation of the accumulation layer 11, the n− type semiconductor substrate 1 is subjected to a thermal treatment.

    Abstract translation: 制备的n型半导体衬底1具有彼此相对的第一主表面1a和第二主表面1b，并且具有形成在第一主表面1a侧上的p +型半导体区域3。 在n型半导体衬底1的第二主表面1b中至少与p +型半导体区域3相对的区域用脉冲激光束照射以形成不规则凹凸。在形成不规则凹凸10之后，积累 在n型半导体衬底1的第二主表面1b侧上形成杂质浓度高于n型半导体衬底1的层11。在形成蓄积层11之后，n型半导体衬底1 进行热处理。

    PHOTODETECTOR DEVICE
    8.
    发明申请
    PHOTODETECTOR DEVICE 有权

    公开(公告)号：US20210356319A1

    公开(公告)日：2021-11-18

    申请号：US17384915

    申请日：2021-07-26

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Takuya FUJITA ,  Yusei TAMURA ,  Kenji MAKINO ,  Takashi BABA ,  Koei YAMAMOTO

    IPC: G01J1/44 ,  H01L27/144 ,  H01L31/02 ,  H01L31/107

    Abstract: A photodetector device includes an avalanche photodiode array substrate formed from compound semiconductor. A plurality of avalanche photodiodes arranged to operate in a Geiger mode are two-dimensionally arranged on the avalanche photodiode array substrate. A circuit substrate includes a plurality of output units which are connected to each other in parallel to form at least one channel. Each of the output units includes a passive quenching element and a capacitative element. The passive quenching element is connected in series to at least one of the plurality of avalanche photodiodes. The capacitative element is connected in series to at least one of the avalanche photodiodes and is connected in parallel to the passive quenching element.

    LIGHT DETECTION DEVICE
    9.
    发明申请
    LIGHT DETECTION DEVICE 审中-公开

    公开(公告)号：US20190334050A1

    公开(公告)日：2019-10-31

    申请号：US16348187

    申请日：2017-11-09

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Shigeyuki NAKAMURA ,  Shunsuke ADACHI ,  Takashi BABA ,  Terumasa NAGANO ,  Koei YAMAMOTO

    IPC: H01L31/101 ,  H01L27/146 ,  H01L31/02

    Abstract: A photodetecting device includes a semiconductor photodetecting element including a plurality of pixels distributed two-dimensionally and a mount substrate including a plurality of signal processing units arranged to process output signals from the corresponding pixels. The semiconductor photodetecting element includes, for each of the pixels, a plurality of avalanche photodiodes arranged to operate in Geiger mode, a plurality of quenching resistors each electrically connected in series with a respective avalanche photodiodes, and a through-electrode electrically connected to the plurality of quenching resistors. Each of the signal processing units includes a current mirror circuit electrically connected to the plurality of avalanche photodiodes via the corresponding through-electrode and arranged to output a signal corresponding to output signals from the plurality of avalanche photodiodes. The number of signal processing units included on the mount substrate is more than the number of light receiving regions in each of the pixels.

    PHOTOELECTRIC CONVERSION ELEMENT AND PHOTOELECTRIC CONVERSION MODULE
    10.
    发明申请
    PHOTOELECTRIC CONVERSION ELEMENT AND PHOTOELECTRIC CONVERSION MODULE 审中-公开

    公开(公告)号：US20190051767A1

    公开(公告)日：2019-02-14

    申请号：US16064165

    申请日：2016-12-12

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Koei YAMAMOTO ,  Shigeyuki NAKAMURA ,  Terumasa NAGANO ,  Kenichi SATO

    IPC: H01L31/02 ,  H01L31/107 ,  G01T1/24 ,  H03K23/78 ,  H04N5/378

    Abstract: A photoelectric conversion element includes: a plurality of pixels that are formed on a common semiconductor substrate and each of which includes an avalanche photodiode; a first line that is formed on the semiconductor substrate, is electrically connected to two or more first pixels included in the plurality of pixels, and collectively extracts output currents from the two or more first pixels; and a second line that is formed on the semiconductor substrate, is electrically connected to two or more second pixels included in the plurality of pixels, and collectively extracts output currents from the two or more second pixels. A light receiving area of each first pixel is larger than a light receiving area of each second pixel.

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