公开(公告)号：US08501054B2

公开(公告)日：2013-08-06

申请号：US12922628

申请日：2010-06-03

申请人： Han Sup Lee ,  Byoung Guk Park ,  Yi Seul Yang ,  Ki Woon Choi ,  Joon Ho Lee ,  Ki Ho Park ,  Hoi Chang Yang

发明人： Han Sup Lee ,  Byoung Guk Park ,  Yi Seul Yang ,  Ki Woon Choi ,  Joon Ho Lee ,  Ki Ho Park ,  Hoi Chang Yang

IPC分类号： B29D11/00

CPC分类号： B29D11/00365 ,  B29D11/00298 ,  G02B3/0031

摘要： An apparatus for manufacturing a micro lens array, wherein lenses having various standards are easily manufactured by forming a micro lens array by adjusting a vacuum condition in a vacuum chamber. The apparatus including: a vacuum chamber including a vacuum space therein; a vacuum unit for forming a vacuum inside the vacuum chamber; an upper frame disposed inside the vacuum chamber and to which a substrate is installed on a lower surface of the upper frame; an elevator for ascending and descending the upper frame; a lower frame disposed below the upper frame; a master plate disposed on the lower frame and includes a plurality of molding grooves on an upper surface of the master plate; and a heater installed to a side of the master plate to heat up the master plate.

摘要翻译： 一种用于制造微透镜阵列的装置，其中通过调节真空室中的真空状态来形成微透镜阵列容易地制造具有各种标准的透镜。 该装置包括：真空室，其中包括真空空间; 用于在真空室内形成真空的真空单元; 设置在所述真空室内的上框架，并且将基板安装在所述上框架的下表面上; 用于升高和降低上部框架的电梯; 设置在上框架下方的下框架; 主板，其设置在所述下框架上，并且在所述主板的上表面上包括多个模制槽; 以及安装在主板侧面以加热主板的加热器。

公开(公告)号：US20110127684A1

公开(公告)日：2011-06-02

申请号：US12922628

申请日：2010-06-03

申请人： Han Sup Lee ,  Byoung Guk Park ,  Yi Seul Yang ,  Ki Woon Choi ,  Joon Ho Lee ,  Ki Ho Park ,  Hoi Chang Yang

发明人： Han Sup Lee ,  Byoung Guk Park ,  Yi Seul Yang ,  Ki Woon Choi ,  Joon Ho Lee ,  Ki Ho Park ,  Hoi Chang Yang

IPC分类号： B29D11/00 ,  B29C35/02 ,  B29C39/42

CPC分类号： B29D11/00365 ,  B29D11/00298 ,  G02B3/0031

摘要： An apparatus for manufacturing a micro lens array, wherein lenses having various standards are easily manufactured by forming a micro lens array by adjusting a vacuum condition in a vacuum chamber. The apparatus including: a vacuum chamber including a vacuum space therein; a vacuum unit for forming a vacuum inside the vacuum chamber; an upper frame disposed inside the vacuum chamber and to which a substrate is installed on a lower surface of the upper frame; an elevator for ascending and descending the upper frame; a lower frame disposed below the upper frame; a master plate disposed on the lower frame and includes a plurality of molding grooves on an upper surface of the master plate; and a heater installed to a side of the master plate to heat up the master plate.

摘要翻译： 一种用于制造微透镜阵列的装置，其中通过调节真空室中的真空状态来形成微透镜阵列容易地制造具有各种标准的透镜。 该装置包括：真空室，其中包括真空空间; 用于在真空室内形成真空的真空单元; 设置在所述真空室内的上框架，并且将基板安装在所述上框架的下表面上; 用于升高和降低上部框架的电梯; 设置在上框架下方的下框架; 主板，其设置在所述下框架上，并且在所述主板的上表面上包括多个模制槽; 以及安装在主板侧面以加热主板的加热器。

公开(公告)号：US20100117061A1

公开(公告)日：2010-05-13

申请号：US12350188

申请日：2009-01-07

申请人： Suk Ho YOON ,  Ki Ho Park ,  Joong Kon Son

发明人： Suk Ho YOON ,  Ki Ho Park ,  Joong Kon Son

IPC分类号： H01L29/12

CPC分类号： H01L33/06

摘要： There is provided a nitride semiconductor device. A nitride semiconductor device according to an aspect of the invention may include: an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; an active layer provided between the n-type and p-type nitride semiconductor layers and having quantum well layers and quantum barrier layers alternately stacked on each other; and an electron blocking layer provided between the active layer and the p-type nitride semiconductor layer, and having a plurality of first nitride layers formed of a material having a higher band gap energy than the quantum barrier layers and a plurality of second nitride layers formed of a material having a lower band gap energy than the first nitride layers, the first and second nitride layers alternately stacked on each other to form a stacked structure, wherein the plurality of first nitride layers have energy levels bent at predetermined inclinations, and with greater proximity to the p-type nitride semiconductor layer, the first nitride layers have a smaller inclination of the energy level.

摘要翻译： 提供一种氮化物半导体器件。 根据本发明的一个方面的氮化物半导体器件可以包括：n型氮化物半导体层; p型氮化物半导体层; 设置在n型和p型氮化物半导体层之间并且具有彼此交替堆叠的量子阱层和量子势垒层的有源层; 以及设置在有源层和p型氮化物半导体层之间的电子阻挡层，并且具有由具有比量子势垒层更高的带隙能量的材料形成的多个第一氮化物层和形成的多个第二氮化物层 具有比第一氮化物层低的带隙能量的材料，第一和第二氮化物层彼此交替堆叠以形成堆叠结构，其中多个第一氮化物层具有以预定倾斜度弯曲的能级，并且具有更大的 靠近p型氮化物半导体层，第一氮化物层具有较小的能级倾斜度。

公开(公告)号：US08859314B2

公开(公告)日：2014-10-14

申请号：US13523571

申请日：2012-06-14

申请人： Jong Sun Maeng ,  Ki Ho Park ,  Bum Joon Kim ,  Hyun Seok Ryu ,  Jung Hyun Lee ,  Boung Kyun Kim ,  Ki Sung Kim ,  Suk Ho Yoon

发明人： Jong Sun Maeng ,  Ki Ho Park ,  Bum Joon Kim ,  Hyun Seok Ryu ,  Jung Hyun Lee ,  Boung Kyun Kim ,  Ki Sung Kim ,  Suk Ho Yoon

IPC分类号： H01L33/32 ,  H01L33/00

CPC分类号： H01L33/007 ,  H01L21/67109 ,  H01L21/68764 ,  H01L21/68771 ,  H01L33/0079

摘要： There is provided a method of manufacturing a semiconductor light emitting device, the method including: sequentially growing a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer on a semiconductor growth substrate to form a light emitting part; forming a support part on the second conductivity type semiconductor layer to be coupled to the light emitting part; separating the semiconductor growth substrate from the light emitting part; and applying an etching gas to the semiconductor growth substrate to remove a residue of the first conductivity type semiconductor layer from a surface of the semiconductor growth substrate.

摘要翻译： 提供一种制造半导体发光器件的方法，该方法包括：在半导体生长衬底上依次生长第一导电类型半导体层，有源层和第二导电类型半导体层，以形成发光部分; 在要耦合到所述发光部分的所述第二导电类型半导体层上形成支撑部分; 将半导体生长衬底与发光部分分离; 以及向所述半导体生长衬底施加蚀刻气体以从所述半导体生长衬底的表面去除所述第一导电类型半导体层的残留物。

公开(公告)号：US20140121530A1

公开(公告)日：2014-05-01

申请号：US13686291

申请日：2012-11-27

申请人： Jae Hun Kim ,  Seok Lee ,  Hyuk Jae Lee ,  Taikjin Lee ,  Sun Ho Kim ,  Seok Hwan Kim ,  Jin Wook Jeoung ,  Ki Ho Park ,  Ju Yeong Oh ,  Deok Ha Woo ,  Chulki Kim

发明人： Jae Hun Kim ,  Seok Lee ,  Hyuk Jae Lee ,  Taikjin Lee ,  Sun Ho Kim ,  Seok Hwan Kim ,  Jin Wook Jeoung ,  Ki Ho Park ,  Ju Yeong Oh ,  Deok Ha Woo ,  Chulki Kim

IPC分类号： A61B3/14

CPC分类号： A61B3/145

摘要： An apparatus for measuring ganglion cells may include: a light generation unit configured to irradiate a first light signal polarized in a first direction and a second light signal polarized in a second direction perpendicular to the first direction to a subject; a reflected light processing unit configured to generate an amplification signal corresponding to an image of the subject using a first reflection signal, which is the first light signal reflected from the subject, and a second reflection signal, which is the second light signal reflected from the subject; and an image processing unit configured to measure ganglion cells in the subject using the amplification signal. The apparatus may be used to count the number of normal ganglion cells in the retina by measuring a phase difference of two lights polarized in different directions. The apparatus may also be used to monitor the progress of glaucoma.

摘要翻译： 用于测量神经节细胞的装置可以包括：光产生单元，被配置为将与第一方向垂直的第二方向上的沿第一方向偏振的第一光信号和第二光信号偏振到对象; 反射光处理单元，被配置为使用作为从被摄体反射的第一光信号的第一反射信号和从第二反射信号反射的第二反射信号来生成与被摄体的图像相对应的放大信号， 学科; 以及图像处理单元，被配置为使用所述放大信号来测量所述对象中的神经节细胞。 该装置可以通过测量在不同方向上偏振的两个光的相位差来计数视网膜中正常神经节细胞的数量。 该装置还可用于监测青光眼的进展。

公开(公告)号：US20080152570A1

公开(公告)日：2008-06-26

申请号：US11976237

申请日：2007-10-23

申请人： Oleg Ledyaev ,  Ki Ho Park ,  Si Hyuk Lee ,  Soo Min Lee

发明人： Oleg Ledyaev ,  Ki Ho Park ,  Si Hyuk Lee ,  Soo Min Lee

IPC分类号： C30B25/00 ,  C01B21/00

CPC分类号： C30B25/18 ,  C30B29/403

摘要： A method of growing a III group nitride single crystal by using a metal-organic chemical vapor deposition (MOCVD) process, the method including: preparing an r-plane (1-102) substrate; forming a nitride-based nucleation layer on the substrate; and growing a nonpolar a-plane nitride gallium single crystal on the nitride-based nucleation layer while altering increase and decrease of a ratio of V/III group to alternate a horizontal growth mode and a vertical growth mode.

摘要翻译： 一种通过使用金属有机化学气相沉积（MOCVD）法生长III族氮化物单晶的方法，所述方法包括：制备r-平面（1-102）衬底; 在基板上形成氮化物基成核层; 并且在氮化物基成核层上生长非极性a面平面氮化镓镓单晶，同时改变V / III基团的比例的增加和减小以交替水平生长模式和垂直生长模式。

公开(公告)号：US07868316B2

公开(公告)日：2011-01-11

申请号：US12350188

申请日：2009-01-07

申请人： Suk Ho Yoon ,  Ki Ho Park ,  Joong Kon Son

发明人： Suk Ho Yoon ,  Ki Ho Park ,  Joong Kon Son

IPC分类号： H01L33/06

CPC分类号： H01L33/06

摘要： There is provided a nitride semiconductor device. A nitride semiconductor device according to an aspect of the invention may include: an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; an active layer provided between the n-type and p-type nitride semiconductor layers and having quantum well layers and quantum barrier layers alternately stacked on each other; and an electron blocking layer provided between the active layer and the p-type nitride semiconductor layer, and having a plurality of first nitride layers formed of a material having a higher band gap energy than the quantum barrier layers and a plurality of second nitride layers formed of a material having a lower band gap energy than the first nitride layers, the first and second nitride layers alternately stacked on each other to form a stacked structure, wherein the plurality of first nitride layers have energy levels bent at predetermined inclinations, and with greater proximity to the p-type nitride semiconductor layer, the first nitride layers have a smaller inclination of the energy level.

摘要翻译： 提供一种氮化物半导体器件。 根据本发明的一个方面的氮化物半导体器件可以包括：n型氮化物半导体层; p型氮化物半导体层; 设置在n型和p型氮化物半导体层之间并且具有彼此交替堆叠的量子阱层和量子势垒层的有源层; 以及设置在有源层和p型氮化物半导体层之间的电子阻挡层，并且具有由具有比量子势垒层更高的带隙能量的材料形成的多个第一氮化物层和形成的多个第二氮化物层 具有比第一氮化物层低的带隙能量的材料，第一和第二氮化物层彼此交替堆叠以形成堆叠结构，其中多个第一氮化物层具有以预定倾斜度弯曲的能级，并且具有更大的 靠近p型氮化物半导体层，第一氮化物层具有较小的能级倾斜度。

公开(公告)号：US20060211681A1

公开(公告)日：2006-09-21

申请号：US10550301

申请日：2004-03-24

申请人： Gwang Lee ,  Young Ahn ,  Ki Ho Park ,  Hong Ki Jun

发明人： Gwang Lee ,  Young Ahn ,  Ki Ho Park ,  Hong Ki Jun

IPC分类号： A61K31/55 ,  C12P17/00 ,  C07D245/02 ,  C12N1/21

CPC分类号： C07D243/04

摘要： The present invention relates to an adenosine deaminase inhibitor and a novel Bacillus sp. strain which produces it. Particularly, the present 5 invention relates to the adenosine deaminase inhibitor, and the novel Bacillus sp. IADA-7 producing the above adenosine deaminase inhibitor. The adenosine deaminase inhibitor of the present Invention shows superior antibacterial and anticancer activities to the previously reported adenosine deaminase inhibitors.

摘要翻译： 本发明涉及腺苷脱氨酶抑制剂和新型芽孢杆菌属 产生它的菌株 特别地，本发明涉及腺苷脱氨酶抑制剂和新型芽孢杆菌属。 产生上述腺苷脱氨酶抑制剂的IADA-7。 本发明的腺苷脱氨酶抑制剂对先前报道的腺苷脱氨酶抑制剂显示出优异的抗菌活性和抗癌活性。

公开(公告)号：US07740823B2

公开(公告)日：2010-06-22

申请号：US11976237

申请日：2007-10-23

申请人： Oleg Ledyaev ,  Ki Ho Park ,  Si Hyuk Lee ,  Soo Min Lee

发明人： Oleg Ledyaev ,  Ki Ho Park ,  Si Hyuk Lee ,  Soo Min Lee

IPC分类号： C01B21/06

CPC分类号： C30B25/18 ,  C30B29/403

摘要： A method of growing a III group nitride single crystal by using a metal-organic chemical vapor deposition (MOCVD) process, the method including: preparing an r-plane (1-102) substrate; forming a nitride-based nucleation layer on the substrate; and growing a nonpolar a-plane nitride gallium single crystal on the nitride-based nucleation layer while altering increase and decrease of a ratio of V/III group to alternate a horizontal growth mode and a vertical growth mode.

摘要翻译： 一种通过使用金属有机化学气相沉积（MOCVD）法生长III族氮化物单晶的方法，所述方法包括：制备r-平面（1-102）衬底; 在基板上形成氮化物基成核层; 并且在氮化物基成核层上生长非极性a面平面氮化镓镓单晶，同时改变V / III基团的比例的增加和减小以交替水平生长模式和垂直生长模式。

公开(公告)号：US07390800B2

公开(公告)日：2008-06-24

申请号：US10550301

申请日：2004-03-24

申请人： Gwang Lee ,  Young Hwan Ahn ,  Ki Ho Park ,  Hong Ki Jun

发明人： Gwang Lee ,  Young Hwan Ahn ,  Ki Ho Park ,  Hong Ki Jun

IPC分类号： C07D243/04 ,  A61K31/551

CPC分类号： C07D243/04

摘要： The present invention relates to an adenosine deaminase inhibitor and a novel Bacillus sp. strain which produces it. Particularly, the present 5 invention relates to the adenosine deaminase inhibitor, and the novel Bacillus sp. IADA-7 producing the above adenosine deaminase inhibitor. The adenosine deaminase inhibitor of the present Invention shows superior antibacterial and anticancer activities to the previously reported adenosine deaminase inhibitors.

摘要翻译： 本发明涉及腺苷脱氨酶抑制剂和新型芽孢杆菌属 产生它的菌株 特别地，本发明涉及腺苷脱氨酶抑制剂和新型芽孢杆菌属。 产生上述腺苷脱氨酶抑制剂的IADA-7。 本发明的腺苷脱氨酶抑制剂对先前报道的腺苷脱氨酶抑制剂显示出优异的抗菌活性和抗癌活性。