公开(公告)号：US20100117061A1

公开(公告)日：2010-05-13

申请号：US12350188

申请日：2009-01-07

申请人： Suk Ho YOON ,  Ki Ho Park ,  Joong Kon Son

发明人： Suk Ho YOON ,  Ki Ho Park ,  Joong Kon Son

IPC分类号： H01L29/12

CPC分类号： H01L33/06

摘要： There is provided a nitride semiconductor device. A nitride semiconductor device according to an aspect of the invention may include: an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; an active layer provided between the n-type and p-type nitride semiconductor layers and having quantum well layers and quantum barrier layers alternately stacked on each other; and an electron blocking layer provided between the active layer and the p-type nitride semiconductor layer, and having a plurality of first nitride layers formed of a material having a higher band gap energy than the quantum barrier layers and a plurality of second nitride layers formed of a material having a lower band gap energy than the first nitride layers, the first and second nitride layers alternately stacked on each other to form a stacked structure, wherein the plurality of first nitride layers have energy levels bent at predetermined inclinations, and with greater proximity to the p-type nitride semiconductor layer, the first nitride layers have a smaller inclination of the energy level.

摘要翻译： 提供一种氮化物半导体器件。 根据本发明的一个方面的氮化物半导体器件可以包括：n型氮化物半导体层; p型氮化物半导体层; 设置在n型和p型氮化物半导体层之间并且具有彼此交替堆叠的量子阱层和量子势垒层的有源层; 以及设置在有源层和p型氮化物半导体层之间的电子阻挡层，并且具有由具有比量子势垒层更高的带隙能量的材料形成的多个第一氮化物层和形成的多个第二氮化物层 具有比第一氮化物层低的带隙能量的材料，第一和第二氮化物层彼此交替堆叠以形成堆叠结构，其中多个第一氮化物层具有以预定倾斜度弯曲的能级，并且具有更大的 靠近p型氮化物半导体层，第一氮化物层具有较小的能级倾斜度。

公开(公告)号：US20120322188A1

公开(公告)日：2012-12-20

申请号：US13523571

申请日：2012-06-14

申请人： Jong Sun MAENG ,  Ki Ho PARK ,  Bum Joon KIM ,  Hyun Seok RYU ,  Jung Hyun LEE ,  Boung Kyun KIM ,  Ki Sung KIM ,  Suk Ho YOON

发明人： Jong Sun MAENG ,  Ki Ho PARK ,  Bum Joon KIM ,  Hyun Seok RYU ,  Jung Hyun LEE ,  Boung Kyun KIM ,  Ki Sung KIM ,  Suk Ho YOON

IPC分类号： H01L33/32

CPC分类号： H01L33/007 ,  H01L21/67109 ,  H01L21/68764 ,  H01L21/68771 ,  H01L33/0079

摘要： There is provided a method of manufacturing a semiconductor light emitting device, the method including: sequentially growing a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer on a semiconductor growth substrate to form a light emitting part; forming a support part on the second conductivity type semiconductor layer to be coupled to the light emitting part; separating the semiconductor growth substrate from the light emitting part; and applying an etching gas to the semiconductor growth substrate to remove a residue of the first conductivity type semiconductor layer from a surface of the semiconductor growth substrate.

摘要翻译： 提供一种制造半导体发光器件的方法，该方法包括：在半导体生长衬底上依次生长第一导电类型半导体层，有源层和第二导电类型半导体层，以形成发光部分; 在要耦合到所述发光部分的所述第二导电类型半导体层上形成支撑部分; 将半导体生长衬底与发光部分分离; 以及向所述半导体生长衬底施加蚀刻气体以从所述半导体生长衬底的表面去除所述第一导电类型半导体层的残留物。

公开(公告)号：US20120261687A1

公开(公告)日：2012-10-18

申请号：US13441562

申请日：2012-04-06

申请人： Hyun Wook SHIM ,  Suk Ho YOON ,  Tan SAKONG ,  Je Won KIM ,  Ki Sung KIM

发明人： Hyun Wook SHIM ,  Suk Ho YOON ,  Tan SAKONG ,  Je Won KIM ,  Ki Sung KIM

IPC分类号： H01L33/32

CPC分类号： H01L33/04 ,  H01L33/32

摘要： There is provided a nitride semiconductor light emitting device including: n-type and p-type nitride semiconductor layers; an active layer disposed between the n-type and p-type nitride semiconductor layers; and an electron injection layer disposed between the n-type nitride semiconductor layer and the active layer. The electron injection layer has a multilayer structure, in which three or more layers having different energy band gaps are stacked, and the multilayer structure is repetitively stacked at least twice. At least one layer among the three or more layers has a reduced energy band gap in individual multilayer structures in a direction toward the active layer, and the layer having the lowest energy band gap has an increased thickness in individual multilayer structures in a direction toward the active layer.

摘要翻译： 提供了一种氮化物半导体发光器件，包括：n型和p型氮化物半导体层; 设置在n型和p型氮化物半导体层之间的有源层; 以及设置在n型氮化物半导体层和有源层之间的电子注入层。 电子注入层具有多层结构，其中堆叠具有不同能带隙的三层或更多层，多层结构重复堆叠至少两次。 三层或更多层中的至少一层在朝向有源层的方向上在单个多层结构中具有减小的能带隙，并且具有最低能带隙的层在朝着该层的方向的单个多层结构中具有增加的厚度 活动层

公开(公告)号：US20150207025A1

公开(公告)日：2015-07-23

申请号：US14472159

申请日：2014-08-28

申请人： Do Young RHEE ,  Sung Tae KIM ,  Young Sun KIM ,  Chul Min KIM ,  Suk Ho YOON ,  Sang Don LEE

发明人： Do Young RHEE ,  Sung Tae KIM ,  Young Sun KIM ,  Chul Min KIM ,  Suk Ho YOON ,  Sang Don LEE

IPC分类号： H01L33/00 ,  H01L33/12

CPC分类号： H01L33/005 ,  H01L33/007

摘要： A method of manufacturing a semiconductor light emitting device includes forming, on a substrate, a first region of a light emitting structure and the light emitting structure includes a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. A protective layer is formed on the first region in a first chamber. The substrate with the first region and the protective layer formed thereon is transferred to a second chamber. A second region is formed on the first region. The first and second regions are disposed in a direction perpendicular to the substrate. The protective layer is grown above a defective region included in the first region and removed before or while the second region is formed.

摘要翻译： 一种制造半导体发光器件的方法包括在衬底上形成发光结构的第一区域，并且发光结构包括第一导电型半导体层，有源层和第二导电类型半导体层 。 在第一室中的第一区域上形成保护层。 将形成有第一区域和保护层的基板转移到第二室。 第二区域形成在第一区域上。 第一和第二区域沿垂直于衬底的方向设置。 保护层生长在包括在第一区域中的缺陷区域上方，并且在形成第二区域之前或之后除去。

公开(公告)号：US20150221826A1

公开(公告)日：2015-08-06

申请号：US14540969

申请日：2014-11-13

申请人： Jung Seung YANG ,  Seong Joon CHO ,  Bum Joon KIM ,  Dong Gyu SHIN ,  Hyun Wook SHIM ,  Suk Ho YOON

发明人： Jung Seung YANG ,  Seong Joon CHO ,  Bum Joon KIM ,  Dong Gyu SHIN ,  Hyun Wook SHIM ,  Suk Ho YOON

IPC分类号： H01L33/24 ,  H01L33/12 ,  H01L33/32 ,  H01L33/00 ,  H01L33/06

CPC分类号： H01L33/24 ,  H01L33/0079 ,  H01L33/04 ,  H01L33/32

摘要： The nitride semiconductor light emitting device includes a first conductivity-type nitride semiconductor layer, a first superlattice layer disposed on the first conductivity-type nitride semiconductor layer, a pit forming layer disposed on the first superlattice layer and having a plurality of V-shaped pits, a second superlattice layer, an active layer, and a second conductivity-type nitride semiconductor layer disposed on the active layer and filling the V-shaped pits. The second superlattice layer is disposed on the pit forming layer and has windings that have the same shape as a shape of windings generated by the V-shaped pits. The active layer is disposed on the second superlattice layer and has windings that have the same shape as the shape of the windings generated by the V-shaped pits.

摘要翻译： 氮化物半导体发光器件包括第一导电型氮化物半导体层，设置在第一导电型氮化物半导体层上的第一超晶格层，设置在第一超晶格层上并具有多个V形凹坑的凹坑形成层 ，第二超晶格层，有源层和设置在有源层上并填充V形凹坑的第二导电型氮化物半导体层。 第二超晶格层设置在凹坑形成层上，并且具有与由V形凹坑产生的绕组形状相同形状的绕组。 有源层设置在第二超晶格层上，并且具有与由V形凹坑产生的绕组形状相同形状的绕组。

公开(公告)号：US20160099378A1

公开(公告)日：2016-04-07

申请号：US14714223

申请日：2015-05-15

申请人： Sang Heon HAN ,  Dong Yul LEE ,  Seung Hyun KIM ,  Jang Mi KIM ,  Suk Ho YOON ,  Sang Jun LEE

发明人： Sang Heon HAN ,  Dong Yul LEE ,  Seung Hyun KIM ,  Jang Mi KIM ,  Suk Ho YOON ,  Sang Jun LEE

IPC分类号： H01L33/00 ,  H01L33/14 ,  H01L33/32 ,  H01L33/06

CPC分类号： H01L33/0075 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/06 ,  H01L33/145 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48237 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

摘要： A method of fabricating a semiconductor light emitting device includes forming a first conductivity type semiconductor layer, forming an active layer by alternately forming a plurality of quantum well layers and a plurality of quantum barrier layers on the first conductivity type semiconductor layer, and forming a second conductivity type semiconductor layer on the active layer. The plurality of quantum barrier layers include at least one first quantum barrier layer adjacent to the first conductivity type semiconductor layer and at least one second quantum barrier layer adjacent to the second conductivity type semiconductor layer. The forming of the active layer includes allowing the at least one first quantum barrier layer to be grown at a first temperature and allowing the at least one second quantum barrier layer to be grown at a second temperature lower than the first temperature.

摘要翻译： 一种制造半导体发光器件的方法包括：形成第一导电型半导体层，通过在第一导电型半导体层上交替地形成多个量子阱层和多个量子势垒层来形成有源层，并形成第二导电型半导体层 导电型半导体层。 多个量子势垒层包括与第一导电类型半导体层相邻的至少一个第一量子势垒层和与第二导电类型半导体层相邻的至少一个第二量子势垒层。 活性层的形成包括允许至少一个第一量子势垒层在第一温度下生长并允许至少一个第二量子势垒层在低于第一温度的第二温度下生长。

公开(公告)号：US20150311062A1

公开(公告)日：2015-10-29

申请号：US14578940

申请日：2014-12-22

申请人： Dong Yul LEE ,  Sang Heon HAN ,  Seung Hyun KIM ,  Jang Mi KIM ,  William SOLARI ,  Hyun Wook SHIM ,  Suk Ho YOON

发明人： Dong Yul LEE ,  Sang Heon HAN ,  Seung Hyun KIM ,  Jang Mi KIM ,  William SOLARI ,  Hyun Wook SHIM ,  Suk Ho YOON

IPC分类号： H01L21/02 ,  H01L33/00

CPC分类号： H01L21/0254 ,  C23C16/34 ,  C23C16/4404 ,  H01L21/02107 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02496 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/007

摘要： A method of manufacturing a semiconductor device, includes forming an aluminum compound film on a surface of a process chamber by supplying an aluminum (Al) source to the process chamber, the surface contacting the aluminum source in the process chamber; disposing a wafer on a susceptor provided in the process chamber after forming the aluminum compound film; and forming a thin film for the semiconductor device on the wafer.

摘要翻译： 一种制造半导体器件的方法包括通过向处理室提供铝（Al）源，与处理室中的铝源接触的表面，在处理室的表面上形成铝化合物膜; 在形成铝化合物膜之后，在设置在处理室中的基座上设置晶片; 并在晶片上形成用于半导体器件的薄膜。