公开(公告)号：US07740823B2

公开(公告)日：2010-06-22

申请号：US11976237

申请日：2007-10-23

申请人： Oleg Ledyaev ,  Ki Ho Park ,  Si Hyuk Lee ,  Soo Min Lee

发明人： Oleg Ledyaev ,  Ki Ho Park ,  Si Hyuk Lee ,  Soo Min Lee

IPC分类号： C01B21/06

CPC分类号： C30B25/18 ,  C30B29/403

摘要： A method of growing a III group nitride single crystal by using a metal-organic chemical vapor deposition (MOCVD) process, the method including: preparing an r-plane (1-102) substrate; forming a nitride-based nucleation layer on the substrate; and growing a nonpolar a-plane nitride gallium single crystal on the nitride-based nucleation layer while altering increase and decrease of a ratio of V/III group to alternate a horizontal growth mode and a vertical growth mode.

摘要翻译： 一种通过使用金属有机化学气相沉积（MOCVD）法生长III族氮化物单晶的方法，所述方法包括：制备r-平面（1-102）衬底; 在基板上形成氮化物基成核层; 并且在氮化物基成核层上生长非极性a面平面氮化镓镓单晶，同时改变V / III基团的比例的增加和减小以交替水平生长模式和垂直生长模式。

公开(公告)号：US20080152570A1

公开(公告)日：2008-06-26

申请号：US11976237

申请日：2007-10-23

申请人： Oleg Ledyaev ,  Ki Ho Park ,  Si Hyuk Lee ,  Soo Min Lee

发明人： Oleg Ledyaev ,  Ki Ho Park ,  Si Hyuk Lee ,  Soo Min Lee

IPC分类号： C30B25/00 ,  C01B21/00

CPC分类号： C30B25/18 ,  C30B29/403

摘要： A method of growing a III group nitride single crystal by using a metal-organic chemical vapor deposition (MOCVD) process, the method including: preparing an r-plane (1-102) substrate; forming a nitride-based nucleation layer on the substrate; and growing a nonpolar a-plane nitride gallium single crystal on the nitride-based nucleation layer while altering increase and decrease of a ratio of V/III group to alternate a horizontal growth mode and a vertical growth mode.

摘要翻译： 一种通过使用金属有机化学气相沉积（MOCVD）法生长III族氮化物单晶的方法，所述方法包括：制备r-平面（1-102）衬底; 在基板上形成氮化物基成核层; 并且在氮化物基成核层上生长非极性a面平面氮化镓镓单晶，同时改变V / III基团的比例的增加和减小以交替水平生长模式和垂直生长模式。

公开(公告)号：US08026156B2

公开(公告)日：2011-09-27

申请号：US12489819

申请日：2009-06-23

申请人： Soo Min Lee ,  Cheol Kyu Kim ,  Jaeun Yoo ,  Sung Hwan Jang ,  Masayoshi Koike

发明人： Soo Min Lee ,  Cheol Kyu Kim ,  Jaeun Yoo ,  Sung Hwan Jang ,  Masayoshi Koike

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L33/0075 ,  H01L21/02002 ,  H01L21/02389 ,  H01L21/02439 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/0079

摘要： In a method for fabricating a nitride-based compound layer, first, a GaN substrate is prepared. A mask layer with a predetermined pattern is formed on the GaN substrate to expose a partial area of the GaN substrate. Then a buffer layer is formed on the partially exposed GaN substrate. The buffer layer is made of a material having a 10% or less lattice mismatch with GaN. Thereafter, the nitride-based compound is grown laterally from a top surface of the buffer layer toward a top surface of the mask layer and the nitride-based compound layer is vertically grown to a predetermined thickness. Also, the mask layer and the buffer layer are removed via wet-etching to separate the nitride-based compound layer from the GaN substrate.

摘要翻译： 在制造氮化物类化合物层的方法中，首先制备GaN衬底。 在GaN衬底上形成具有预定图案的掩模层，以暴露GaN衬底的部分区域。 然后在部分曝光的GaN衬底上形成缓冲层。 缓冲层由具有10％以下与GaN的晶格失配的材料制成。 此后，氮化物类化合物从缓冲层的顶表面朝向掩模层的顶表面横向生长，并且氮化物基化合物层垂直生长至预定厚度。 此外，通过湿蚀刻除去掩模层和缓冲层，以将氮化物基化合物层与GaN衬底分离。

公开(公告)号：US07859086B2

公开(公告)日：2010-12-28

申请号：US11723065

申请日：2007-03-16

申请人： Cheol Kyu Kim ,  Yung Ho Ryu ,  Soo Min Lee ,  Jong In Yang ,  Tae Hyung Kim

发明人： Cheol Kyu Kim ,  Yung Ho Ryu ,  Soo Min Lee ,  Jong In Yang ,  Tae Hyung Kim

IPC分类号： H01L33/00 ,  H01L29/04 ,  H01L29/12

CPC分类号： H01L29/2003 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02664 ,  H01L33/0075

摘要： A nitride semiconductor single crystal substrate, a manufacturing method thereof and a method for manufacturing a vertical nitride semiconductor device using the same. According to an aspect of the invention, in the nitride semiconductor single crystal substrate, upper and lower regions are divided along a thickness direction, the nitride single crystal substrate having a thickness of at least 100 μm. Here, the upper region has a doping concentration that is five times or greater than that of the lower region. Preferably, a top surface of the substrate in the upper region has Ga polarity. Also, according to a specific embodiment of the invention, the lower region is intentionally un-doped and the upper region is n-doped. Preferably, each of the upper and lower regions has a doping concentration substantially identical in a thickness direction.

摘要翻译： 氮化物半导体单晶衬底，其制造方法和使用其的垂直氮化物半导体器件的制造方法。 根据本发明的一个方面，在氮化物半导体单晶衬底中，沿着厚度方向分割上部和下部区域，所述氮化物单晶衬底的厚度至少为100μm。 这里，上部区域的掺杂浓度为下部区域的5倍以上。 优选地，上部区域中的基板的顶表面具有Ga极性。 此外，根据本发明的具体实施例，下部区域有意地未掺杂，并且上部区域是n掺杂的。 优选地，上部区域和下部区域中的每一个具有在厚度方向上基本相同的掺杂浓度。

公开(公告)号：US20070215983A1

公开(公告)日：2007-09-20

申请号：US11723065

申请日：2007-03-16

申请人： Cheol Kyu Kim ,  Yung Ho Ryu ,  Soo Min Lee ,  Jong In Yang ,  Tae Hyung Kim

发明人： Cheol Kyu Kim ,  Yung Ho Ryu ,  Soo Min Lee ,  Jong In Yang ,  Tae Hyung Kim

IPC分类号： H01L29/12

CPC分类号： H01L29/2003 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02664 ,  H01L33/0075

摘要： A nitride semiconductor single crystal substrate, a manufacturing method thereof and a method for manufacturing a vertical nitride semiconductor device using the same. According to an aspect of the invention, in the nitride semiconductor single crystal substrate, upper and lower regions are divided along a thickness direction, the nitride single crystal substrate having a thickness of at least 100 μm. Here, the upper region has a doping concentration that is five times or greater than that of the lower region. Preferably, a top surface of the substrate in the upper region has Ga polarity. Also, according to a specific embodiment of the invention, the lower region is intentionally un-doped and the upper region is n-doped. Preferably, each of the upper and lower regions has a doping concentration substantially identical in a thickness direction.

摘要翻译： 氮化物半导体单晶衬底，其制造方法和使用其的垂直氮化物半导体器件的制造方法。 根据本发明的一个方面，在氮化物半导体单晶衬底中，沿厚度方向分割上下区域，氮化物单晶衬底的厚度至少为100μm。 这里，上部区域的掺杂浓度为下部区域的5倍以上。 优选地，上部区域中的基板的顶表面具有Ga极性。 此外，根据本发明的具体实施例，下部区域有意地未掺杂，并且上部区域是n掺杂的。 优选地，上部区域和下部区域中的每一个具有在厚度方向上基本相同的掺杂浓度。

公开(公告)号：US07067401B2

公开(公告)日：2006-06-27

申请号：US11235278

申请日：2005-09-27

申请人： Sun Woon Kim ,  In Eung Kim ,  Hun Joo Hahm ,  Soo Min Lee ,  Dong Joon Kim ,  Je Won Kim

发明人： Sun Woon Kim ,  In Eung Kim ,  Hun Joo Hahm ,  Soo Min Lee ,  Dong Joon Kim ,  Je Won Kim

IPC分类号： H01L21/20

CPC分类号： C30B29/406 ,  C30B25/02 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/0254 ,  H01L21/0262 ,  Y10S438/967

摘要： Disclosed is a method of fabricating nitride semiconductors in a MOCVD reactor. GaN is first deposited on an inner wall of the MOCVD reactor, and a sapphire substrate is loaded into the MOCVD reactor. The sapphire substrate is heated and etching gas is injected into the MOCVD reactor. NH3 gas is injected into the MOCVD reactor to nitrify the surface of the sapphire substrate. A nitride semiconductor layer is grown on the nitrified sapphire substrate. By surface-reforming the sapphire substrate and then growing the nitride semiconductor layer on the surface-reformed sapphire substrate via MOCVD without formation of a low temperature buffer layer, an excellent nitride semiconductor structure can be realized. In this circumstance, the nitride semiconductor layer for example of GaN can be grown effectively on the surface-treated sapphire substrate because GaN deposition occurs on the sapphire substrate while it is etched.

公开(公告)号：US5897359A

公开(公告)日：1999-04-27

申请号：US987474

申请日：1997-12-09

申请人： Deok Ho Cho ,  Soo Min Lee ,  Tae Hyeon Han ,  Byung Ryul Ryum ,  Kwang Eui Pyun

发明人： Deok Ho Cho ,  Soo Min Lee ,  Tae Hyeon Han ,  Byung Ryul Ryum ,  Kwang Eui Pyun

IPC分类号： H01L29/74 ,  H01L21/331 ,  H01L29/737 ,  H01L21/8222

CPC分类号： H01L29/66242 ,  H01L29/7378

摘要： There is disclosed a method of manufacturing a silicon/silicon germanium heterojunction bipolar transistor having a good conformity and an improved speed characteristic, which includes the steps of sequentially laminating an underlying nitride film, an oxide film, a polycrystalline silicon film and an upper nitride on a semiconductor substrate on which devices are separated and a collector is formed; sequentially etching said upper nitride film and said polycrystalline silicon film using the emitter as a mask, and then forming a side wall nitride film; selectively wet-etching said oxide film to form a side base linker opening; burying said base linker opening with a polycrystalline silicon; oxidizing said polycrystalline silicon film buried into said base linker opening and then removing said oxide film by means of the selective wet-etch process; removing said upper nitride and then forming a silicon/silicon germanium film as a base film on the exposed thereof; and forming an emitter said silicon/silicon germanium film.

摘要翻译： 公开了一种制造具有良好一致性和改进的速度特性的硅/硅锗异质结双极晶体管的方法，其包括以下步骤：将下面的氮化物膜，氧化物膜，多晶硅膜和上部氮化物依次层压在 半导体衬底，器件分离并形成集电极; 使用发射极作为掩模，依次蚀刻所述上部氮化物膜和所述多晶硅膜，然后形成侧壁氮化物膜; 选择性地湿蚀刻所述氧化膜以形成侧基连接器开口; 用多晶硅掩埋所述基底连接器开口; 氧化所述多晶硅膜，所述多晶硅膜埋入所述基底连接器开口中，然后通过选择性湿蚀刻工艺除去所述氧化物膜; 去除所述上部氮化物，然后在其暴露时形成硅/硅锗膜作为基膜; 以及形成所述硅/硅锗膜的发射极。

公开(公告)号：US09034850B2

公开(公告)日：2015-05-19

申请号：US13511065

申请日：2010-11-19

申请人： Seon Mi Kim ,  Min Hee Lee ,  Jae Sun Kim ,  Hoe Chul Jung ,  So Young Lee ,  Soo Min Lee ,  Eun Jeong Kim ,  Eui Sun Park ,  Sung Hoon Park ,  Bong Yong Lee ,  Key An Um

发明人： Seon Mi Kim ,  Min Hee Lee ,  Jae Sun Kim ,  Hoe Chul Jung ,  So Young Lee ,  Soo Min Lee ,  Eun Jeong Kim ,  Eui Sun Park ,  Sung Hoon Park ,  Bong Yong Lee ,  Key An Um

IPC分类号： A01N57/00 ,  C07D239/545 ,  A61K31/506 ,  C07D239/46 ,  C07D401/04 ,  C07D403/04 ,  C07D405/14 ,  C07D213/74 ,  C07D253/075 ,  C07D401/12 ,  C07D401/14 ,  C07D403/06 ,  C07D403/12 ,  C07D405/12 ,  C07D409/12 ,  C07D409/14 ,  C07D413/12 ,  C07D417/12 ,  C07D487/04 ,  C07D491/048 ,  C07F9/6558

CPC分类号： C07D239/545 ,  A61K31/506 ,  C07D213/74 ,  C07D239/46 ,  C07D253/075 ,  C07D401/04 ,  C07D401/12 ,  C07D401/14 ,  C07D403/04 ,  C07D403/06 ,  C07D403/12 ,  C07D405/12 ,  C07D405/14 ,  C07D409/12 ,  C07D409/14 ,  C07D413/12 ,  C07D417/12 ,  C07D487/04 ,  C07D491/048 ,  C07F9/65583 ,  C07F9/65586

摘要： Disclosed are compounds useful as gonadotrophin-releasing hormone (“GnRH”) receptor antagonist.

摘要翻译： 公开了可用作促性腺激素释放激素（“GnRH”）受体拮抗剂的化合物。

公开(公告)号：US20100190968A1

公开(公告)日：2010-07-29

申请号：US12446523

申请日：2006-10-24

申请人： Bong Cheol Kim ,  Wonrack Choi ,  Soo Min Lee ,  Se Jun Yun ,  Chang-Kyun Han ,  Guang-Jin Im ,  Wie-Jong Kwak

发明人： Bong Cheol Kim ,  Wonrack Choi ,  Soo Min Lee ,  Se Jun Yun ,  Chang-Kyun Han ,  Guang-Jin Im ,  Wie-Jong Kwak

IPC分类号： C07H15/256

CPC分类号： A61K31/015

摘要： The present invention relates to the use of oleanane-type triterpene saponin compounds, which are effective for improving memory and learning ability, as an effective ingredient of drugs for the treatment and prevention of dementia and mild cognitive impairment and health foods for the improvement of brain functions including cognitive function.

摘要翻译： 本发明涉及作为治疗和预防痴呆和轻度认知障碍的药物的有效成分和用于改善脑的健康食品的有利于提高记忆力和学习能力的油酸型三萜皂苷化合物的用途 功能包括认知功能。

公开(公告)号：US07645688B2

公开(公告)日：2010-01-12

申请号：US11790329

申请日：2007-04-25

申请人： Soo Min Lee ,  Masayoshi Koike ,  Sung Hwan Jang ,  Hyo Won Suh

发明人： Soo Min Lee ,  Masayoshi Koike ,  Sung Hwan Jang ,  Hyo Won Suh

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： C30B25/02 ,  C30B25/183 ,  C30B29/403 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02447 ,  H01L21/02472 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/02609

摘要： A method of growing a non-polar m-plane nitride semiconductor. A (11-23) plane sapphire substrate is prepared, and a non-polar (10-10) nitride semiconductor is grown on the sapphire substrate. The present invention can also be applied to a method for manufacturing other m-plane hexagonal semiconductors.

摘要翻译： 一种生长非极性m面氮化物半导体的方法。 制备（11-23）平面蓝宝石衬底，在蓝宝石衬底上生长非极性（10-10）氮化物半导体。 本发明也可以应用于制造其它m面六边形半导体的方法。