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    OPTOELECTRONIC PROJECTION DEVICE
    1.
    发明申请
    OPTOELECTRONIC PROJECTION DEVICE 有权
    光电投影装置

    公开(公告)号：US20110241031A1

    公开(公告)日：2011-10-06

    申请号：US13127328

    申请日：2009-11-27

    申请人： Norwin von Malm ,  Klaus Streubel ,  Patrick Rode ,  Karl Engl ,  Lutz Hoppel ,  Jurgen Moosburger

    发明人： Norwin von Malm ,  Klaus Streubel ,  Patrick Rode ,  Karl Engl ,  Lutz Hoppel ,  Jurgen Moosburger

    IPC分类号： H01L33/62

    CPC分类号： H01L33/62 ,  H01L27/156 ,  H01L33/22 ,  H01L33/382 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An optoelectronic projection device which generates a predefined image during operation, including a semiconductor body having an active layer that generates electromagnetic radiation and a radiation exit side and is an imaging element of the projection device, wherein, to electrically contact the semiconductor body, a first contact layer and a second contact layer are arranged at a rear side of the semiconductor body, the rear side lying opposite the radiation exit side, and are electrically insulated from one another by a separating layer.

    摘要翻译： 一种光电投影装置，其在工作期间产生预定图像，包括具有产生电磁辐射的有源层和辐射出射侧的半导体本体，并且是投影装置的成像元件，其中，与半导体本体电接触， 接触层和第二接触层设置在半导体本体的后侧，后侧与辐射出口侧相对，并且通过分离层彼此电绝缘。

    Radiation-emitting semiconductor chip
    3.
    发明授权
    Radiation-emitting semiconductor chip 有权
    辐射发射半导体芯片

    公开(公告)号：US09054016B2

    公开(公告)日：2015-06-09

    申请号：US13123421

    申请日：2009-10-29

    申请人： Jürgen Moosburger ,  Norwin von Malm ,  Patrick Rode ,  Lutz Höppel ,  Karl Engl

    发明人： Jürgen Moosburger ,  Norwin von Malm ,  Patrick Rode ,  Lutz Höppel ,  Karl Engl

    IPC分类号： H01L33/00 ,  H01L27/15 ,  H01L25/16 ,  H01L33/08 ,  H01L33/38

    CPC分类号： H01L27/15 ,  H01L25/167 ,  H01L33/005 ,  H01L33/02 ,  H01L33/08 ,  H01L33/382 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2924/00

    摘要： A radiation-emitting semiconductor chip includes a carrier and a semiconductor body having a semiconductor layer sequence, wherein an emission region and a protective diode region are formed in the semiconductor body having the semiconductor layer sequence; the semiconductor layer sequence includes an active region that generates radiation, the active region being arranged between a first semiconductor layer and a second semiconductor layer; the first semiconductor layer is arranged on a side of the active region which faces away from the carrier; the emission region has a recess extending through the active region; the first semiconductor layer in the emission region is electrically conductively connected to a first connection layer, wherein the first connection layer extends in the recess from the first semiconductor layer toward the carrier; and the first connection layer in the protective diode region is electrically conductively connected to the second semiconductor layer.

    摘要翻译： 辐射发射半导体芯片包括具有半导体层序列的载体和半导体本体，其中在具有半导体层序列的半导体主体中形成发光区域和保护二极管区域; 所述半导体层序列包括产生辐射的有源区，所述有源区布置在第一半导体层和第二半导体层之间; 第一半导体层布置在有源区的背离载体的一侧; 发射区域具有延伸穿过有源区域的凹部; 发射区域中的第一半导体层导电地连接到第一连接层，其中第一连接层在凹部中从第一半导体层朝向载体延伸; 并且保护二极管区域中的第一连接层与第二半导体层导电连接。

    RADIATION-EMITTING SEMICONDUCTOR CHIP
    4.
    发明申请
    RADIATION-EMITTING SEMICONDUCTOR CHIP 有权
    辐射发射半导体芯片

    公开(公告)号：US20110260205A1

    公开(公告)日：2011-10-27

    申请号：US13123421

    申请日：2009-10-29

    申请人： Jürgen Moosburger ,  Norwin Von Malm ,  Patrick Rode ,  Lutz Höppel ,  Karl Engl

    发明人： Jürgen Moosburger ,  Norwin Von Malm ,  Patrick Rode ,  Lutz Höppel ,  Karl Engl

    IPC分类号： H01L33/62

    CPC分类号： H01L27/15 ,  H01L25/167 ,  H01L33/005 ,  H01L33/02 ,  H01L33/08 ,  H01L33/382 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2924/00

    摘要： A radiation-emitting semiconductor chip includes a carrier and a semiconductor body having a semiconductor layer sequence, wherein an emission region and a protective diode region are formed in the semiconductor body having the semiconductor layer sequence; the semiconductor layer sequence includes an active region that generates radiation, the active region being arranged between a first semiconductor layer and a second semiconductor layer; the first semiconductor layer is arranged on a side of the active region which faces away from the carrier; the emission region has a recess extending through the active region; the first semiconductor layer in the emission region is electrically conductively connected to a first connection layer, wherein the first connection layer extends in the recess from the first semiconductor layer toward the carrier; and the first connection layer in the protective diode region is electrically conductively connected to the second semiconductor layer.

    摘要翻译： 辐射发射半导体芯片包括具有半导体层序列的载体和半导体本体，其中在具有半导体层序列的半导体主体中形成发光区域和保护二极管区域; 所述半导体层序列包括产生辐射的有源区，所述有源区布置在第一半导体层和第二半导体层之间; 第一半导体层布置在有源区的背离载体的一侧; 发射区域具有延伸穿过有源区域的凹部; 发射区域中的第一半导体层导电地连接到第一连接层，其中第一连接层在凹部中从第一半导体层朝向载体延伸; 并且保护二极管区域中的第一连接层与第二半导体层导电连接。

    Optoelectronic Semiconductor Chip
    6.
    发明申请
    Optoelectronic Semiconductor Chip 有权
    光电半导体芯片

    公开(公告)号：US20130228819A1

    公开(公告)日：2013-09-05

    申请号：US13821554

    申请日：2011-08-22

    申请人： Karl Engl ,  Markus Maute ,  Andreas Weimar ,  Lutz Hoeppel ,  Patrick Rode ,  Juergen Moosburger ,  Norwin von Malm

    发明人： Karl Engl ,  Markus Maute ,  Andreas Weimar ,  Lutz Hoeppel ,  Patrick Rode ,  Juergen Moosburger ,  Norwin von Malm

    IPC分类号： H01L33/62

    CPC分类号： H01L33/62 ,  H01L33/20 ,  H01L33/22 ,  H01L33/382 ,  H01L33/405 ,  H01L33/44 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An optoelectronic semiconductor chip includes a semiconductor layer sequence and a carrier substrate. A first and a second electrical contact layer are arranged at least in regions between the carrier substrate and the semiconductor layer sequence and are electrically insulated from one another by an electrically insulating layer. A mirror layer is arranged between the semiconductor layer sequence and the carrier substrate. The minor layer adjoins partial regions of the first electrical contact layer and partial regions of the electrically insulating layer. The partial regions of the electrically insulating layer which adjoin the mirror layer are covered by the second electrical contact layer in such a way that at no point do they adjoin a surrounding medium of the optoelectronic semiconductor chip.

    摘要翻译： 光电子半导体芯片包括半导体层序列和载体基板。 第一和第二电接触层至少布置在载体衬底和半导体层序列之间的区域中，并且通过电绝缘层彼此电绝缘。 半导体层序列和载体基板之间布置有镜层。 次层邻接第一电接触层的部分区域和电绝缘层的部分区域。 邻接镜面层的电绝缘层的部分区域被第二电接触层覆盖，使得它们不会与光电子半导体芯片的周围介质邻接。

    Monolithic, Optoelectronic Semiconductor Body and Method for the Production Thereof
    7.
    发明申请
    Monolithic, Optoelectronic Semiconductor Body and Method for the Production Thereof 有权
    单片，光电半导体及其制造方法

    公开(公告)号：US20110101390A1

    公开(公告)日：2011-05-05

    申请号：US12920317

    申请日：2009-02-25

    申请人： Karl Engl ,  Frank Singer ,  Patrick Rode ,  Lutz Hoppel ,  Martin Strassburg

    发明人： Karl Engl ,  Frank Singer ,  Patrick Rode ,  Lutz Hoppel ,  Martin Strassburg

    IPC分类号： H01L27/15 ,  H01L33/08

    CPC分类号： H01L27/156 ,  H01L33/08 ,  H01L33/382 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An optoelectronic semiconductor body comprises a semiconductor layer sequence which is subdivided into at least two electrically isolated subsegments. The semiconductor layer sequence has an active layer in each subarea. Furthermore, at least three electrical contact pads are provided. A first line level makes contact with a first of the at least two subsegments and with the first contact pad. A second line level makes contact with the second of the at least two subsegments and with a second contact pad. A third line level connects the two subsegments to one another and makes contact with the third contact pad. Furthermore, the line levels are each arranged opposite a first main face, wherein the first main face is intended to emit electromagnetic radiation that is produced.

    摘要翻译： 光电半导体主体包括半导体层序列，其被细分为至少两个电隔离的子区段。 半导体层序列在每个子区域中具有活性层。 此外，提供至少三个电接触垫。 第一线路级别与至少两个子片段中的第一个以及与第一接触焊盘接触。 第二线路级别与至少两个子段中的第二线路接触并且与第二接触焊盘接触。 第三线路电平将两个子段彼此连接并与第三接触焊盘接触。 此外，线路电平各自布置成与第一主面对置，其中第一主面面用于发射产生的电磁辐射。

    RADIATION-EMITTING SEMICONDUCTOR CHIP AND METHOD FOR PRODUCING A RADIATION-EMITTING SEMICONDUCTOR CHIP
    8.
    发明申请
    RADIATION-EMITTING SEMICONDUCTOR CHIP AND METHOD FOR PRODUCING A RADIATION-EMITTING SEMICONDUCTOR CHIP 有权
    辐射发射半导体芯片和产生辐射发射半导体芯片的方法

    公开(公告)号：US20120018763A1

    公开(公告)日：2012-01-26

    申请号：US12922736

    申请日：2009-06-25

    申请人： Karl Engl ,  Berthold Hahn ,  Klaus Streubel ,  Markus Klein

    发明人： Karl Engl ,  Berthold Hahn ,  Klaus Streubel ,  Markus Klein

    IPC分类号： H01L33/62

    CPC分类号： H01L27/15 ,  H01L33/382 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A radiation-emitting semiconductor chip includes: a carrier and a semiconductor body with a semiconductor layer sequence including an active region that generates radiation, a first semiconductor layer and a second semiconductor layer; wherein the active region is arranged between the first semiconductor layer and the second semiconductor layer; the first semiconductor layer is arranged on a side of the active region which faces away from the carrier; the semiconductor body comprises at least one recess which extends through the active region; the first semiconductor layer is electrically conductively connected to a first connection layer extending in the recess from the first semiconductor layer in a direction of the carrier; and the first connection layer is electrically connected to the second semiconductor layer via a protective diode.

    摘要翻译： 辐射发射半导体芯片包括：载体和具有包括产生辐射的有源区的半导体层序列的半导体本体，第一半导体层和第二半导体层; 其中所述有源区布置在所述第一半导体层和所述第二半导体层之间; 第一半导体层布置在有源区的背离载体的一侧; 所述半导体本体包括延伸穿过所述有源区域的至少一个凹部; 所述第一半导体层与所述第一半导体层沿着所述载体的方向导电地连接到在所述凹部中延伸的第一连接层; 并且第一连接层经由保护二极管电连接到第二半导体层。