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    OPTOELECTRONIC PROJECTION DEVICE
    1.
    发明申请
    OPTOELECTRONIC PROJECTION DEVICE 有权
    光电投影装置

    公开(公告)号：US20110241031A1

    公开(公告)日：2011-10-06

    申请号：US13127328

    申请日：2009-11-27

    申请人： Norwin von Malm ,  Klaus Streubel ,  Patrick Rode ,  Karl Engl ,  Lutz Hoppel ,  Jurgen Moosburger

    发明人： Norwin von Malm ,  Klaus Streubel ,  Patrick Rode ,  Karl Engl ,  Lutz Hoppel ,  Jurgen Moosburger

    IPC分类号： H01L33/62

    CPC分类号： H01L33/62 ,  H01L27/156 ,  H01L33/22 ,  H01L33/382 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An optoelectronic projection device which generates a predefined image during operation, including a semiconductor body having an active layer that generates electromagnetic radiation and a radiation exit side and is an imaging element of the projection device, wherein, to electrically contact the semiconductor body, a first contact layer and a second contact layer are arranged at a rear side of the semiconductor body, the rear side lying opposite the radiation exit side, and are electrically insulated from one another by a separating layer.

    摘要翻译： 一种光电投影装置，其在工作期间产生预定图像，包括具有产生电磁辐射的有源层和辐射出射侧的半导体本体，并且是投影装置的成像元件，其中，与半导体本体电接触， 接触层和第二接触层设置在半导体本体的后侧，后侧与辐射出口侧相对，并且通过分离层彼此电绝缘。

    Optoelectronic Semiconductor Chip
    4.
    发明申请
    Optoelectronic Semiconductor Chip 有权
    光电半导体芯片

    公开(公告)号：US20130228819A1

    公开(公告)日：2013-09-05

    申请号：US13821554

    申请日：2011-08-22

    申请人： Karl Engl ,  Markus Maute ,  Andreas Weimar ,  Lutz Hoeppel ,  Patrick Rode ,  Juergen Moosburger ,  Norwin von Malm

    发明人： Karl Engl ,  Markus Maute ,  Andreas Weimar ,  Lutz Hoeppel ,  Patrick Rode ,  Juergen Moosburger ,  Norwin von Malm

    IPC分类号： H01L33/62

    CPC分类号： H01L33/62 ,  H01L33/20 ,  H01L33/22 ,  H01L33/382 ,  H01L33/405 ,  H01L33/44 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An optoelectronic semiconductor chip includes a semiconductor layer sequence and a carrier substrate. A first and a second electrical contact layer are arranged at least in regions between the carrier substrate and the semiconductor layer sequence and are electrically insulated from one another by an electrically insulating layer. A mirror layer is arranged between the semiconductor layer sequence and the carrier substrate. The minor layer adjoins partial regions of the first electrical contact layer and partial regions of the electrically insulating layer. The partial regions of the electrically insulating layer which adjoin the mirror layer are covered by the second electrical contact layer in such a way that at no point do they adjoin a surrounding medium of the optoelectronic semiconductor chip.

    摘要翻译： 光电子半导体芯片包括半导体层序列和载体基板。 第一和第二电接触层至少布置在载体衬底和半导体层序列之间的区域中，并且通过电绝缘层彼此电绝缘。 半导体层序列和载体基板之间布置有镜层。 次层邻接第一电接触层的部分区域和电绝缘层的部分区域。 邻接镜面层的电绝缘层的部分区域被第二电接触层覆盖，使得它们不会与光电子半导体芯片的周围介质邻接。

    Radiation-emitting semiconductor chip
    5.
    发明授权
    Radiation-emitting semiconductor chip 有权
    辐射发射半导体芯片

    公开(公告)号：US09054016B2

    公开(公告)日：2015-06-09

    申请号：US13123421

    申请日：2009-10-29

    申请人： Jürgen Moosburger ,  Norwin von Malm ,  Patrick Rode ,  Lutz Höppel ,  Karl Engl

    发明人： Jürgen Moosburger ,  Norwin von Malm ,  Patrick Rode ,  Lutz Höppel ,  Karl Engl

    IPC分类号： H01L33/00 ,  H01L27/15 ,  H01L25/16 ,  H01L33/08 ,  H01L33/38

    CPC分类号： H01L27/15 ,  H01L25/167 ,  H01L33/005 ,  H01L33/02 ,  H01L33/08 ,  H01L33/382 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2924/00

    摘要： A radiation-emitting semiconductor chip includes a carrier and a semiconductor body having a semiconductor layer sequence, wherein an emission region and a protective diode region are formed in the semiconductor body having the semiconductor layer sequence; the semiconductor layer sequence includes an active region that generates radiation, the active region being arranged between a first semiconductor layer and a second semiconductor layer; the first semiconductor layer is arranged on a side of the active region which faces away from the carrier; the emission region has a recess extending through the active region; the first semiconductor layer in the emission region is electrically conductively connected to a first connection layer, wherein the first connection layer extends in the recess from the first semiconductor layer toward the carrier; and the first connection layer in the protective diode region is electrically conductively connected to the second semiconductor layer.

    摘要翻译： 辐射发射半导体芯片包括具有半导体层序列的载体和半导体本体，其中在具有半导体层序列的半导体主体中形成发光区域和保护二极管区域; 所述半导体层序列包括产生辐射的有源区，所述有源区布置在第一半导体层和第二半导体层之间; 第一半导体层布置在有源区的背离载体的一侧; 发射区域具有延伸穿过有源区域的凹部; 发射区域中的第一半导体层导电地连接到第一连接层，其中第一连接层在凹部中从第一半导体层朝向载体延伸; 并且保护二极管区域中的第一连接层与第二半导体层导电连接。

    RADIATION-EMITTING SEMICONDUCTOR CHIP
    6.
    发明申请
    RADIATION-EMITTING SEMICONDUCTOR CHIP 有权
    辐射发射半导体芯片

    公开(公告)号：US20110260205A1

    公开(公告)日：2011-10-27

    申请号：US13123421

    申请日：2009-10-29

    申请人： Jürgen Moosburger ,  Norwin Von Malm ,  Patrick Rode ,  Lutz Höppel ,  Karl Engl

    发明人： Jürgen Moosburger ,  Norwin Von Malm ,  Patrick Rode ,  Lutz Höppel ,  Karl Engl

    IPC分类号： H01L33/62

    CPC分类号： H01L27/15 ,  H01L25/167 ,  H01L33/005 ,  H01L33/02 ,  H01L33/08 ,  H01L33/382 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2924/00

    摘要： A radiation-emitting semiconductor chip includes a carrier and a semiconductor body having a semiconductor layer sequence, wherein an emission region and a protective diode region are formed in the semiconductor body having the semiconductor layer sequence; the semiconductor layer sequence includes an active region that generates radiation, the active region being arranged between a first semiconductor layer and a second semiconductor layer; the first semiconductor layer is arranged on a side of the active region which faces away from the carrier; the emission region has a recess extending through the active region; the first semiconductor layer in the emission region is electrically conductively connected to a first connection layer, wherein the first connection layer extends in the recess from the first semiconductor layer toward the carrier; and the first connection layer in the protective diode region is electrically conductively connected to the second semiconductor layer.

    摘要翻译： 辐射发射半导体芯片包括具有半导体层序列的载体和半导体本体，其中在具有半导体层序列的半导体主体中形成发光区域和保护二极管区域; 所述半导体层序列包括产生辐射的有源区，所述有源区布置在第一半导体层和第二半导体层之间; 第一半导体层布置在有源区的背离载体的一侧; 发射区域具有延伸穿过有源区域的凹部; 发射区域中的第一半导体层导电地连接到第一连接层，其中第一连接层在凹部中从第一半导体层朝向载体延伸; 并且保护二极管区域中的第一连接层与第二半导体层导电连接。

    Monolithic, Optoelectronic Semiconductor Body and Method for the Production Thereof
    7.
    发明申请
    Monolithic, Optoelectronic Semiconductor Body and Method for the Production Thereof 有权
    单片，光电半导体及其制造方法

    公开(公告)号：US20110101390A1

    公开(公告)日：2011-05-05

    申请号：US12920317

    申请日：2009-02-25

    申请人： Karl Engl ,  Frank Singer ,  Patrick Rode ,  Lutz Hoppel ,  Martin Strassburg

    发明人： Karl Engl ,  Frank Singer ,  Patrick Rode ,  Lutz Hoppel ,  Martin Strassburg

    IPC分类号： H01L27/15 ,  H01L33/08

    CPC分类号： H01L27/156 ,  H01L33/08 ,  H01L33/382 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An optoelectronic semiconductor body comprises a semiconductor layer sequence which is subdivided into at least two electrically isolated subsegments. The semiconductor layer sequence has an active layer in each subarea. Furthermore, at least three electrical contact pads are provided. A first line level makes contact with a first of the at least two subsegments and with the first contact pad. A second line level makes contact with the second of the at least two subsegments and with a second contact pad. A third line level connects the two subsegments to one another and makes contact with the third contact pad. Furthermore, the line levels are each arranged opposite a first main face, wherein the first main face is intended to emit electromagnetic radiation that is produced.

    摘要翻译： 光电半导体主体包括半导体层序列，其被细分为至少两个电隔离的子区段。 半导体层序列在每个子区域中具有活性层。 此外，提供至少三个电接触垫。 第一线路级别与至少两个子片段中的第一个以及与第一接触焊盘接触。 第二线路级别与至少两个子段中的第二线路接触并且与第二接触焊盘接触。 第三线路电平将两个子段彼此连接并与第三接触焊盘接触。 此外，线路电平各自布置成与第一主面对置，其中第一主面面用于发射产生的电磁辐射。

    LIGHTING DEVICE
    8.
    发明申请
    LIGHTING DEVICE 有权
    照明设备

    公开(公告)号：US20130043496A1

    公开(公告)日：2013-02-21

    申请号：US13522508

    申请日：2011-01-17

    申请人： Matthias Sabathil ,  Norwin von Malm ,  Lutz Hoeppel ,  Stefan Illek ,  Bernd Barchmann ,  Patrick Rode

    发明人： Matthias Sabathil ,  Norwin von Malm ,  Lutz Hoeppel ,  Stefan Illek ,  Bernd Barchmann ,  Patrick Rode

    IPC分类号： H01L33/08

    CPC分类号： H01L25/0753 ,  H01L33/22 ,  H01L33/507 ,  H01L33/58 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A lighting device with front carrier, rear carrier and plurality of light-emitting diode chips, which when in operation emits light and releases waste heat, wherein rear carrier is covered at least in selected locations by front carrier, light-emitting diode chips are arranged between rear carrier and front carrier to form array, light-emitting diodes are contacted electrically by rear and/or front carrier and immobilized mechanically by rear carrier and front carrier, front carrier is coupled thermally conductively to light-emitting diode chips and includes light outcoupling face remote from light-emitting diode chips, which light outcoupling face releases some of waste heat released by light-emitting diode chips into surrounding environment, each light-emitting diode chip is actuated with electrical nominal power of 100 mW or less when lighting device is in operation and has light yield of 100 lm/W or more.

    摘要翻译： 一种具有前载体，后载体和多个发光二极管芯片的照明装置，其在运行时发光并释放废热，其中后载体至少在前载体上被选定的位置覆盖，发光二极管芯片布置 在后载体和前载体之间形成阵列，发光二极管由后和/或前载体电接触并由后载体和前载体机械固定，前载体热传导耦合到发光二极管芯片，并且包括光输出耦合 面对远离发光二极管芯片的光输出耦合面将发光二极管芯片释放的一部分废热释放到周围环境中，当发光二极管芯片的照明装置为100mW或更小时，每个发光二极管芯片的功率为100mW 具有100 lm / W以上的光收率。

    LIGHT-EMITTING DIODE ARRANGEMENT HAVING A PIEZO TRANSFORMER
    9.
    发明申请
    LIGHT-EMITTING DIODE ARRANGEMENT HAVING A PIEZO TRANSFORMER 有权
    具有PIEZO变压器的发光二极管布置

    公开(公告)号：US20140145610A1

    公开(公告)日：2014-05-29

    申请号：US13820181

    申请日：2011-08-24

    申请人： Patrick Rode ,  Norwin von Malm ,  Lutz Höppel

    发明人： Patrick Rode ,  Norwin von Malm ,  Lutz Höppel

    IPC分类号： F21K99/00 ,  F21V23/02

    CPC分类号： F21K9/50 ,  F21K9/60 ,  F21V7/00 ,  F21V23/02 ,  F21V23/023 ,  F21Y2115/10 ,  H01L41/107

    摘要： A light-emitting diode arrangement has a frame-shaped piezo transformer having at least one output-side connection, and having a light-emitting diode module that generates electromagnetic radiation, which module is disposed within the frame-shaped piezo transformer and electrically connects to the output-side connection of the piezo transformer by at least one output-side electrical conductor, wherein radiation emitted by the light-emitting diode module in the direction of the piezo transformer is reflected, at the latter.

    摘要翻译： 发光二极管装置具有至少一个输出侧连接的框形压电变压器，并且具有产生电磁辐射的发光二极管模块，该模块设置在框形压电变压器内并电连接到 通过至少一个输出侧电导体的压电变压器的输出侧连接，其中由发光二极管模块在压电变压器的方向上发射的辐射在后者处被反射。