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公开(公告)号：US20050264787A1
公开(公告)日：2005-12-01
申请号：US11133531
申请日：2005-05-20
申请人： Hans-Jurgen Mann , Wolfgang Singer
发明人： Hans-Jurgen Mann , Wolfgang Singer
CPC分类号： G03F7/70233 , G02B5/005 , G02B17/0657 , G03F7/7025
摘要： A projection lens for a EUV microlithographic projection exposure apparatus comprises a diaphragm (BL) which is arranged at a distance (D) in front of a mirror (S2) of the lens. The diaphragm (BL) has a non-round aperture with an edge contour that may be configured such two rays of a light bundle disposed symmetrically with respect to a chief ray are treated equally, i.e. either both rays pass through the diaphragm aperture or both are blocked by the diaphragm.
摘要翻译： 用于EUV微光刻投影曝光装置的投影透镜包括在透镜的反射镜（S 2）的前方设置有距离（D）的光阑（BL）。 隔膜（BL）具有非圆形孔口，其边缘轮廓可以被配置为相对于主射线对称设置的两束光线被均等地对待，即两条光线通过光阑孔径或两者都是 被隔膜封闭
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2.发明申请公开(公告)号：US20080192225A1
公开(公告)日：2008-08-14
申请号：US11911454
申请日：2006-04-12
IPC分类号： G03B27/54
CPC分类号： G03F7/70566 , G03F7/70058
摘要： The invention relates to a projection exposure system, in particular for micro-lithography. The projection exposure system according to the invention comprises a light source (18) for producing light in the EUV region. The projection exposure system further comprises a first optical system (19, 20, 21, 22, 23, 24) for illuminating a mask (25) by the light of the light source (18) and a second optical system (26, 27, 28, 29, 30, 31) for imaging the mask (25) on a component (32). At least one polarization-optical element (1) is disposed on the beam path between the light source (18) and the component (32).
摘要翻译： 本发明涉及一种投影曝光系统，特别涉及微光刻技术。 根据本发明的投影曝光系统包括用于在EUV区域中产生光的光源（18）。 投影曝光系统还包括用于通过光源（18）的光照射掩模（25）的第一光学系统（19,20,21,22,23,24）和第二光学系统（26,27,24） 28,29,30,31），用于将所述掩模（25）成像在部件（32）上。 至少一个偏振光学元件（1）设置在光源（18）和部件（32）之间的光束路径上。
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3.发明申请公开(公告)号：US20070188729A1
公开(公告)日：2007-08-16
申请号：US11738935
申请日：2007-04-23
申请人： Hans-Jurgen Mann , Wolfgang Singer
发明人： Hans-Jurgen Mann , Wolfgang Singer
IPC分类号： G03B27/54
CPC分类号： G03F7/70233 , G02B5/005 , G02B17/0657 , G03F7/7025
摘要： A projection lens for a EUV microlithographic projection exposure apparatus comprises a diaphragm (BL) which is arranged at a distance (D) in front of a mirror (S2) of the lens. The diaphragm (BL) has a non-round aperture with an edge contour that may be configured such two rays of a light bundle disposed symmetrically with respect to a chief ray are treated equally, i.e. either both rays pass through the diaphragm aperture or both are blocked by the diaphragm.
摘要翻译： 用于EUV微光刻投影曝光装置的投影透镜包括在透镜的反射镜（S 2）的前方设置有距离（D）的光阑（BL）。 隔膜（BL）具有非圆形孔口，其边缘轮廓可以被配置为相对于主射线对称设置的两束光束被均等地对待，即两条光线通过隔膜孔径或两者都是 被隔膜封闭
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公开(公告)号：US20110273791A1
公开(公告)日：2011-11-10
申请号：US13183823
申请日：2011-07-15
申请人： Hans-Jurgen Mann , David Shafer , Wilhelm Ulrich
发明人： Hans-Jurgen Mann , David Shafer , Wilhelm Ulrich
IPC分类号： G02B17/02
CPC分类号： G03F7/70233 , G02B13/143 , G02B17/061 , G02B17/0652 , G02B17/0657
摘要： In general, in one aspect, the invention features an objective arranged to image radiation from an object plane to an image plane, including a plurality of elements arranged to direct the radiation from the object plane to the image plane, wherein the objective has an image side numerical aperture of more than 0.55 and a maximum image side field dimension of more than 1 mm, and the objective is a catoptric objective.
摘要翻译： 通常，在一个方面，本发明的特征在于设置成将从物体平面到图像平面的辐射成像的目标，包括布置成将来自物体平面的辐射引导到图像平面的多个元件，其中物镜具有图像 侧面数值孔径大于0.55，最大像侧场尺寸大于1 mm，目标是一个反射目标。
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公开(公告)号：US20070195317A1
公开(公告)日：2007-08-23
申请号：US11656878
申请日：2007-01-23
IPC分类号： G01N21/00
CPC分类号： G02B27/0043 , G02B17/0647 , G03F7/70233 , G03F7/70258 , Y10S359/90
摘要： An objective and method of fabricating an objective, particularly a projection objective for microlithography, comprising a plurality of optical elements. In one example, the method comprises acts of determining groups of optically similar optical elements or surfaces having at least two members, determining wavefront deformations by the optical elements or surfaces, determining the necessary corrections for the optical elements or surfaces of a group, and performing the corrections for a group at a group member.
摘要翻译： 一种制造物镜的目的和方法，特别是用于微光刻的投影物镜，其包括多个光学元件。 在一个示例中，该方法包括确定具有至少两个构件的光学相似的光学元件或表面的组的动作，确定光学元件或表面的波前变形，确定组的光学元件或表面的必要校正，以及执行 一个团体成员的一个组的更正。
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公开(公告)号：US20080137183A1
公开(公告)日：2008-06-12
申请号：US12012825
申请日：2008-02-06
申请人： Hans-Jurgen Mann , Wilhelm Ulrich , Gunther Seitz
发明人： Hans-Jurgen Mann , Wilhelm Ulrich , Gunther Seitz
CPC分类号： G03F7/70233 , G02B17/0657 , G03F7/70275
摘要： A projection objective provides a light path for a light bundle from an object field in an object plane to an image field in an image plane. The projection objective includes a first mirror (S1), a second mirror (S2), a third mirror (S3), a fourth mirror (S4), a fifth mirror (S5), a sixth mirror (S6), a seventh mirror (S7), and an eighth mirror (S8). The light path is provided via the eight mirrors, and in the light path exactly one intermediate image of the object field is provided.
摘要翻译： 投影物镜提供从物体平面中的物场到像平面中的图像场的光束的光路。 投影物镜包括第一镜（S 1），第二镜（S 2），第三镜（S 3），第四镜（S 4），第五镜（S 5），第六镜 ），第七反射镜（S7）和第八反射镜（S8）。 通过八个反射镜提供光路，并且在光路中提供了物场的一个中间图像。
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公开(公告)号：US20060066940A1
公开(公告)日：2006-03-30
申请号：US11216560
申请日：2005-08-31
申请人： Johann Trenkler , Hans-Jurgen Mann , Udo Nothelfer
发明人： Johann Trenkler , Hans-Jurgen Mann , Udo Nothelfer
CPC分类号： G02B5/0891 , B82Y10/00 , G02B5/0816 , G02B5/085 , G03F7/7015 , G03F7/70916 , G03F7/70958 , G21K1/062
摘要： The invention relates to a reflective optical element and an EUV lithography appliance containing one such element, said appliance displaying a low propensity to contamination. According to the invention, the reflective optical element has a protective layer system consisting of at least one layer. The optical characteristics of the protective layer system are between those of a spacer and an absorber or correspond to those of a spacer. The selection of a material with the smallest possible imaginary part and a real part which is as close to 1 as possible in terms of the refractive index leads to a plateau-type reflectivity course according to the thickness of the protective layer system between two thicknesses d1 and d2. The thickness of the protective layer system is selected in such a way that it is less than d2.
摘要翻译： 本发明涉及一种包含一种这样的元件的反射光学元件和EUV光刻器具，所述器具显示出低的污染倾向。 根据本发明，反射型光学元件具有由至少一层构成的保护层系统。 保护层系统的光学特性在间隔物和吸收体的光学特性之间，或对应于间隔物的光学特性。 在折射率方面选择具有尽可能小的虚部和实部尽可能接近1的材料导致根据保护层系统的厚度在两个厚度d之间的平台型反射率过程 1和d 2。 选择保护层系统的厚度使其小于d 2。
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公开(公告)号：US20060050258A1
公开(公告)日：2006-03-09
申请号：US11243407
申请日：2005-10-04
申请人： Russell Hudyma , Hans-Jurgen Mann , Udo Dinger
发明人： Russell Hudyma , Hans-Jurgen Mann , Udo Dinger
IPC分类号： G03B27/54
CPC分类号： G02B17/0657 , G02B17/0652 , G03B27/54 , G03F7/70233 , G03F7/70275
摘要： An EUV optical projection system includes at least six reflecting surfaces for imaging an object (OB) on an image (IM). The system is preferably configured to form an intermediate image (IMI) along an optical path from the object (OB) to the image (IM) between a secondary mirror (M2) and a tertiary mirror (M3), such that a primary mirror (M1) and the secondary mirror (M2) form a first optical group (G1) and the tertiary mirror (M3), a fourth mirror (M4), a fifth mirror (M5) and a sixth mirror (M6) form a second optical group (G2). The system also preferably includes an aperture stop (APE) located along the optical path from the object (OB) to the image (IM) between the primary mirror (M1) and the secondary mirror (M2). The secondary mirror (M2) is preferably concave, and the tertiary mirror (M3) is preferably convex. Each of the six reflecting surfaces preferably receives a chief ray (CR) from a central field point at an incidence angle of less than substantially 15°. The system preferably has a numerical aperture greater than 0.18 at the image (IM). The system is preferably configured such that a chief ray (CR) converges toward the optical axis (OA) while propagating between the secondary mirror (M2) and the tertiary mirror (M3).
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公开(公告)号：US20050018312A1
公开(公告)日：2005-01-27
申请号：US10878611
申请日：2004-06-29
申请人： Toralf Gruner , Hans-Jurgen Mann
发明人： Toralf Gruner , Hans-Jurgen Mann
CPC分类号： G02B27/286 , G02B13/14 , G02B17/08 , G02B17/0892 , G03F7/70191 , G03F7/70225 , G03F7/70566
摘要： A projection lens (10) for a microlithographic projection exposure apparatus has a first optical element, for example a birefringent lens (L2), that has polarization dependent properties causing intensity fluctuations in an image plane of the projection lens. These fluctuation may be produced by a second optical element (24), for example a polarization selective beam splitting layer (28), that is arranged downstream of the first optical element. A gray filter (32; 132; 232) disposed in the beam path reduces the intensity fluctuations.
摘要翻译： 用于微光刻投影曝光装置的投影透镜（10）具有第一光学元件（例如双折射透镜（L2）），其具有导致投影透镜的图像平面中的强度波动的偏振相关特性。 这些波动可以由布置在第一光学元件下游的第二光学元件（24）产生，例如偏振选择分束层（28）。 设置在光束路径中的灰色滤光器（32; 132; 232）减小了强度波动。
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公开(公告)号：US20090251772A1
公开(公告)日：2009-10-08
申请号：US12399775
申请日：2009-03-06
申请人： Johann TRENKLER , Hans-Jurgen Mann , Udo Nothelfer
发明人： Johann TRENKLER , Hans-Jurgen Mann , Udo Nothelfer
IPC分类号： G02B5/00
CPC分类号： G02B5/0891 , B82Y10/00 , G02B5/0816 , G02B5/085 , G03F7/7015 , G03F7/70916 , G03F7/70958 , G21K1/062
摘要： A reflective optical element and an EUV lithography appliance containing one such element are provided, the appliance displaying a low propensity to contamination. According to the invention, the reflective optical element has a protective layer system consisting of at least one layer. The optical characteristics of the protective layer system are between those of a spacer and an absorber, or correspond to those of a spacer. The selection of a material with the smallest possible imaginary part and a real part which is as close to 1 as possible in terms of the refractive index leads to a plateau-type reflectivity course according to the thickness of the protective layer system between two thicknesses d1 and d2. The thickness of the protective layer system is selected in such a way that it is less than d2.
摘要翻译： 提供了包含一个这样的元件的反射光学元件和EUV光刻设备，该器具显示出低的污染倾向。 根据本发明，反射型光学元件具有由至少一层构成的保护层系统。 保护层系统的光学特性在间隔物和吸收体的光学特性之间，或者对应于间隔物的光学特性。 选择具有尽可能小的虚部的材料和在折射率方面尽可能接近1的实部导致根据两个厚度之间的保护层系统的厚度d1的平台型反射率过程 和d2。 保护层系统的厚度选择为小于d2。
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