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公开(公告)号：US20060215272A1
公开(公告)日：2006-09-28
申请号：US11443077
申请日：2006-05-31
申请人： Toralf Gruner , Hans-Jurgen Mann
发明人： Toralf Gruner , Hans-Jurgen Mann
IPC分类号： G02B3/00
CPC分类号： G02B27/286 , G02B13/14 , G02B17/08 , G02B17/0892 , G03F7/70191 , G03F7/70225 , G03F7/70566
摘要： An objective in a microlithographic projection exposure apparatus has a first optical element that has polarization dependent properties causing intensity fluctuations in an image plane of the objective. These fluctuations may be produced by a second optical element that is arranged downstream of the first optical element. A gray filter disposed in the beam path reduces the intensity fluctuations.
摘要翻译： 微光刻投影曝光装置中的目的是具有第一光学元件，该第一光学元件具有导致物镜的图像平面中的强度波动的偏振相关特性。 这些波动可以由布置在第一光学元件的下游的第二光学元件产生。 布置在光束路径中的灰色滤光器减小了强度波动。
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2.发明申请公开(公告)号：US20080192225A1
公开(公告)日：2008-08-14
申请号：US11911454
申请日：2006-04-12
IPC分类号： G03B27/54
CPC分类号： G03F7/70566 , G03F7/70058
摘要： The invention relates to a projection exposure system, in particular for micro-lithography. The projection exposure system according to the invention comprises a light source (18) for producing light in the EUV region. The projection exposure system further comprises a first optical system (19, 20, 21, 22, 23, 24) for illuminating a mask (25) by the light of the light source (18) and a second optical system (26, 27, 28, 29, 30, 31) for imaging the mask (25) on a component (32). At least one polarization-optical element (1) is disposed on the beam path between the light source (18) and the component (32).
摘要翻译： 本发明涉及一种投影曝光系统，特别涉及微光刻技术。 根据本发明的投影曝光系统包括用于在EUV区域中产生光的光源（18）。 投影曝光系统还包括用于通过光源（18）的光照射掩模（25）的第一光学系统（19,20,21,22,23,24）和第二光学系统（26,27,24） 28,29,30,31），用于将所述掩模（25）成像在部件（32）上。 至少一个偏振光学元件（1）设置在光源（18）和部件（32）之间的光束路径上。
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公开(公告)号：US20050018312A1
公开(公告)日：2005-01-27
申请号：US10878611
申请日：2004-06-29
申请人： Toralf Gruner , Hans-Jurgen Mann
发明人： Toralf Gruner , Hans-Jurgen Mann
CPC分类号： G02B27/286 , G02B13/14 , G02B17/08 , G02B17/0892 , G03F7/70191 , G03F7/70225 , G03F7/70566
摘要： A projection lens (10) for a microlithographic projection exposure apparatus has a first optical element, for example a birefringent lens (L2), that has polarization dependent properties causing intensity fluctuations in an image plane of the projection lens. These fluctuation may be produced by a second optical element (24), for example a polarization selective beam splitting layer (28), that is arranged downstream of the first optical element. A gray filter (32; 132; 232) disposed in the beam path reduces the intensity fluctuations.
摘要翻译： 用于微光刻投影曝光装置的投影透镜（10）具有第一光学元件（例如双折射透镜（L2）），其具有导致投影透镜的图像平面中的强度波动的偏振相关特性。 这些波动可以由布置在第一光学元件下游的第二光学元件（24）产生，例如偏振选择分束层（28）。 设置在光束路径中的灰色滤光器（32; 132; 232）减小了强度波动。
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4.发明授权Projection exposure system, method for manufacturing a micro-structured structural member by the aid of such a projection exposure system and polarization-optical element adapted for use in such a system 有权投影曝光系统，借助于这种投影曝光系统和适于在这种系统中使用的偏振光学元件制造微结构结构构件的方法公开(公告)号：US08854606B2
公开(公告)日：2014-10-07
申请号：US13161011
申请日：2011-06-15
CPC分类号： G03F7/70566 , G03F7/70058
摘要： The invention relates to a projection exposure system, in particular for micro-lithography. The projection exposure system according to the invention comprises a light source for producing light in the EUV region. The projection exposure system further comprises a first optical system for illuminating a mask by the light of the light source and a second optical system for imaging the mask on a component. At least one polarization-optical element is disposed on the beam path between the light source and the component.
摘要翻译： 本发明涉及一种投影曝光系统，特别涉及微光刻技术。 根据本发明的投影曝光系统包括用于在EUV区域中产生光的光源。 投影曝光系统还包括用于通过光源的光照射掩模的第一光学系统和用于使部件上的掩模成像的第二光学系统。 至少一个偏振光学元件设置在光源和部件之间的光束路径上。
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公开(公告)号：US08542342B2
公开(公告)日：2013-09-24
申请号：US12408577
申请日：2009-03-20
CPC分类号： G03B27/42 , G03F7/70258
摘要： A lithographic method of manufacturing a miniaturized device using a projection exposure system involves illuminating the object plane of an imaging optics of the projection exposure system with measuring light; detecting, for each of a plurality of locations on an image plane of the imaging optics, an angular distribution of an intensity of the measuring light traversing the image plane at the respective location; adjusting a telecentricity of the projection exposure system based on a selected patterning structure to be imaged and on the plurality of the detected angular distributions; disposing the selected pattern structure to be imaged in a region of the object plane of the imaging optics; disposing a substrate carrying a resist in a region of the image plane of the imaging optics and exposing the resist with imaging light using the projection exposure system with the adjusted telecentricity; and developing the exposed resist and processing the substrate with the developed resist.
摘要翻译： 使用投影曝光系统制造小型化装置的光刻方法包括用测量光照射投影曝光系统的成像光学元件的物平面; 针对所述摄像光学元件的像平面上的多个位置中的每一个检测在相应位置处穿过所述图像平面的测量光的角度分布; 基于要成像的所选择的图案化结构和所述多个所检测的角度分布来调整所述投影曝光系统的远心度; 将要成像的所选择的图案结构设置在成像光学器件的物平面的区域中; 在所述成像光学元件的像面的区域中设置携带抗蚀剂的基板，并且利用所述投影曝光系统以调节的远心度将成像光曝光; 并显影出曝光的抗蚀剂并用显影的抗蚀剂处理衬底。
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6.发明申请公开(公告)号：US20130044303A1
公开(公告)日：2013-02-21
申请号：US13590673
申请日：2012-08-21
申请人： Bernhard Kneer , Markus Deguenther , Toralf Gruner
发明人： Bernhard Kneer , Markus Deguenther , Toralf Gruner
IPC分类号： G03B27/54
CPC分类号： G03F7/70191 , G03F7/70116 , G03F7/70341 , G03F7/70558 , G03F7/7085
摘要： A projection exposure system and a method for operating a projection exposure system for microlithography with an illumination system are disclosed. The illumination system includes at least one variably adjustable pupil-defining element. The illumination stress of at least one optical element of the projection exposure system is determined automatically in the case of an adjustment of the at least one variably adjustable pupil-defining element. From the automatically determined illumination stress, the maximum radiant power of the light source is set or determined and/or in which an illumination system is provided with which different illumination settings can be made. Usage of the projection exposure system is recorded and, from the history of the usage, at least one state parameter of at least one optical element of the projection exposure system is determined.
摘要翻译： 公开了一种用于利用照明系统操作用于微光刻的投影曝光系统的投影曝光系统和方法。 所述照明系统包括至少一个可变地调整的光瞳限定元件。 在调整至少一个可变瞳孔限定元件的情况下，自动确定投影曝光系统的至少一个光学元件的照明应力。 根据自动确定的照明应力，设置或确定光源的最大辐射功率，和/或其中提供可以进行不同照明设置的照明系统。 记录投影曝光系统的使用，并且根据使用历史确定投影曝光系统的至少一个光学元件的至少一个状态参数。
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公开(公告)号：US08325322B2
公开(公告)日：2012-12-04
申请号：US12700122
申请日：2010-02-04
申请人： Markus Hauf , Ulrich Schoenhoff , Payam Tayebati , Michael Thier , Tilmann Heil , Ole Fluegge , Arif Kazi , Alexander Sauerhoefer , Gerhard Focht , Jochen Weber , Toralf Gruner , Aksel Goehnermeier , Dirk Hellweg
发明人： Markus Hauf , Ulrich Schoenhoff , Payam Tayebati , Michael Thier , Tilmann Heil , Ole Fluegge , Arif Kazi , Alexander Sauerhoefer , Gerhard Focht , Jochen Weber , Toralf Gruner , Aksel Goehnermeier , Dirk Hellweg
CPC分类号： G02B7/008 , G02B7/1815 , G02B26/06 , G02B27/0025 , G03F7/70191 , G03F7/70308 , G03F7/70825 , G03F7/70891
摘要： The disclosure relates to an optical correction device with thermal actuators for influencing the temperature distribution in the optical correction device. The optical correction device is constructed from at least two partial elements which differ with regard to their ability to transport heat. Furthermore, the disclosure relates to methods for influencing the temperature distribution in an optical element.
摘要翻译： 本发明涉及具有用于影响光学校正装置中的温度分布的热致动器的光学校正装置。 光学校正装置由至少两个部分元件构成，这些部分元素关于其传送热量的能力而不同。 此外，本公开涉及影响光学元件中的温度分布的方法。
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8.发明授权公开(公告)号：US08319944B2
公开(公告)日：2012-11-27
申请号：US12825001
申请日：2010-06-28
申请人： Helmut Beierl , Sascha Bleidistel , Wolfgang Singer , Toralf Gruner , Alexander Epple , Norbert Wabra , Susanne Beder , Jochen Weber , Heiko Feldmann , Baerbel Schwaer , Olaf Rogalsky , Ari Kazi
发明人： Helmut Beierl , Sascha Bleidistel , Wolfgang Singer , Toralf Gruner , Alexander Epple , Norbert Wabra , Susanne Beder , Jochen Weber , Heiko Feldmann , Baerbel Schwaer , Olaf Rogalsky , Ari Kazi
CPC分类号： G03F7/70341 , G03F7/70891
摘要： A microlithographic projection exposure apparatus comprises a projection objective which images an object onto an image plane and has a lens with a curved surface. In the projection objective there is a liquid or solid medium which directly adjoins the curved surface over a region which is usable for imaging the object. The projection exposure apparatus also has an adjustable manipulator for reducing an image field curvature which is caused by heating of the medium during the projection operation.
摘要翻译： 微光刻投影曝光装置包括将物体成像到平面上并具有弯曲表面的透镜的投影物镜。 在投影物镜中，存在液体或固体介质，其直接邻接可用于成像物体的区域上的曲面。 投影曝光装置还具有可调节的操纵器，用于降低在投影操作期间由介质的加热引起的图像场曲率。
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公开(公告)号：US20120134016A1
公开(公告)日：2012-05-31
申请号：US13364565
申请日：2012-02-02
申请人： Heiko Feldmann , Toralf Gruner , Alexander Epple
发明人： Heiko Feldmann , Toralf Gruner , Alexander Epple
IPC分类号： G02B17/08
CPC分类号： G03F7/70891 , G03F7/70225 , G03F7/70275 , G03F7/705 , G03F7/70983
摘要： The disclosure relates to a method of manufacturing a projection objective, and a projection objective, such as a projection objective configured to be used in a microlithographic process. The method can include defining an initial design for the projection objective and optimizing the design using a merit function. The method can be used in the manufacturing of projection objectives which may be used in a microlithographic process of manufacturing miniaturized devices.
摘要翻译： 本公开涉及一种制造投影物镜的方法，以及投影物镜，例如被配置为在微光刻工艺中使用的投影物镜。 该方法可以包括定义投影物镜的初始设计，并使用优值函数优化设计。 该方法可用于制造可用于制造小型化装置的微光刻工艺中的投影物镜。
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10.发明申请PROJECTION EXPOSURE SYSTEM, METHOD FOR MANUFACTURING A MICRO-STRUCTURED STRUCTURAL MEMBER BY THE AID OF SUCH A PROJECTION EXPOSURE SYSTEM AND POLARIZATION-OPTICAL ELEMENT ADAPTED FOR USE IN SUCH A SYSTEM 有权投影曝光系统，通过这种投影曝光系统的辅助制造微结构结构构件的方法和适用于这种系统的偏光光学元件公开(公告)号：US20110242517A1
公开(公告)日：2011-10-06
申请号：US13161011
申请日：2011-06-15
CPC分类号： G03F7/70566 , G03F7/70058
摘要： The invention relates to a projection exposure system, in particular for micro-lithography. The projection exposure system according to the invention comprises a light source for producing light in the EUV region. The projection exposure system further comprises a first optical system for illuminating a mask by the light of the light source and a second optical system for imaging the mask on a component. At least one polarization-optical element is disposed on the beam path between the light source and the component.
摘要翻译： 本发明涉及一种投影曝光系统，特别涉及微光刻技术。 根据本发明的投影曝光系统包括用于在EUV区域中产生光的光源。 投影曝光系统还包括用于通过光源的光照射掩模的第一光学系统和用于使部件上的掩模成像的第二光学系统。 至少一个偏振光学元件设置在光源和部件之间的光束路径上。
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