公开(公告)号：US5457336A

公开(公告)日：1995-10-10

申请号：US322811

申请日：1994-10-13

申请人： Hao Fang ,  Sameer Haddad ,  Chi Chang

发明人： Hao Fang ,  Sameer Haddad ,  Chi Chang

IPC分类号： H01L27/02 ,  H01L27/115

CPC分类号： H01L27/0251 ,  H01L27/115

摘要： An improved nonvolatile memory device is provided, in which the threshold voltage variations (V.sub.ts) and transconductance degradation are significantly reduced. The NVM includes protection structure for limiting the process induced damage incurred during the manufacturing process. The protection structure is utilized to provide reliable and stable dielectrical characteristics for the NVM device. The protection structure is easy to implement and will not affect the conventional NVM performance.

摘要翻译： 提供了一种改进的非易失性存储器件，其中阈值电压变化（Vts）和跨导劣化显着降低。 NVM包括用于限制在制造过程中产生的过程引起的损坏的保护结构。 该保护结构用于为NVM器件提供可靠和稳定的介电特性。 保护结构易于实现，不会影响传统的NVM性能。

公开(公告)号：US5978272A

公开(公告)日：1999-11-02

申请号：US871589

申请日：1997-06-06

申请人： Hao Fang ,  Sameer Haddad ,  Nader Radjy

发明人： Hao Fang ,  Sameer Haddad ,  Nader Radjy

IPC分类号： G11C16/04 ,  H01L29/423 ,  H01L29/788 ,  G11C11/34

CPC分类号： G11C16/0416 ,  H01L29/42324 ,  H01L29/7886 ,  G11C2216/10

摘要： A nonvolatile memory structure is disclosed. The nonvolatile memory structure includes a substrate, a heavily doped drain junction disposed in the substrate, and a lightly doped source junction disposed in the substrate. The source junction is diffused more deeply than the drain junction. The nonvolatile memory structure also includes a gate structure. The gate structure has a floating gate capacitively coupled to the substrate and a control gate capacitively coupled to the floating gate. The heavily doped drain junction has a central portion proximate to the gate structure. The lightly doped source junction also has a central portion proximate to the gate structure. At least the central portion of the lightly doped source junction is more lightly doped than the central portion of the heavily doped drain junction.

摘要翻译： 公开了非易失性存储器结构。 非易失性存储器结构包括衬底，设置在衬底中的重掺杂漏极结，以及设置在衬底中的轻掺杂源极结。 源极结比漏极结扩散更深。 非易失性存储器结构还包括栅极结构。 栅极结构具有电容耦合到衬底的浮动栅极和与浮动栅极电容耦合的控制栅极。 重掺杂漏极结具有靠近栅极结构的中心部分。 轻掺杂源极结还具有靠近栅极结构的中心部分。 至少轻掺杂源结的中心部分比重掺杂漏极结的中心部分更轻掺杂。

公开(公告)号：US20120302017A1

公开(公告)日：2012-11-29

申请号：US13566741

申请日：2012-08-03

申请人： Mark S. CHANG ,  Hao Fang ,  King Wai Kelwin Ko

发明人： Mark S. CHANG ,  Hao Fang ,  King Wai Kelwin Ko

IPC分类号： H01L21/336

CPC分类号： H01L27/11521 ,  H01L21/76816 ,  H01L27/115

摘要： A method and system for providing at least one contact in a flash memory device is disclosed. The flash memory device includes a plurality of gate stacks and at lease one component including a polysilicon layer as a top surface. The method and system further include forming a silicide on the top surface of the polysilicon layer and providing an insulating layer covering the plurality of gate stacks, the at least one component and the silicide. The method and system also include etching the insulating layer to provide at least one contact hole. The insulating layer etching step uses the silicide as an etch stop layer to ensure that the insulating etching step does not etch through the polysilicon layer. The method and system also include filling the at least one contact hole with a conductor.

摘要翻译： 公开了一种用于在闪速存储器件中提供至少一个触点的方法和系统。 闪速存储器件包括多个栅极堆叠，并且至少包括一个包括多晶硅层作为顶表面的部件。 该方法和系统还包括在多晶硅层的顶表面上形成硅化物，并提供覆盖多个栅叠层，至少一个元件和硅化物的绝缘层。 该方法和系统还包括蚀刻绝缘层以提供至少一个接触孔。 绝缘层蚀刻步骤使用硅化物作为蚀刻停止层，以确保绝缘蚀刻步骤​​不会蚀刻穿过多晶硅层。 该方法和系统还包括用导体填充至少一个接触孔。

公开(公告)号：US07767817B2

公开(公告)日：2010-08-03

申请号：US10570807

申请日：2004-09-07

申请人： Binghe Wang ,  Xingming Gao ,  Wenqian Yang ,  Hao Fang ,  Jun Yan

发明人： Binghe Wang ,  Xingming Gao ,  Wenqian Yang ,  Hao Fang ,  Jun Yan

IPC分类号： C07D215/00 ,  C07D215/12

CPC分类号： C07F5/025 ,  G01N2021/6439

摘要： Described herein are boronic acid fluorescent compounds and methods of use thereof.

摘要翻译： 本文描述的是硼酸荧光化合物及其使用方法。

公开(公告)号：US20080144384A1

公开(公告)日：2008-06-19

申请号：US12031640

申请日：2008-02-14

申请人： Tuan D. Pham ,  Masaaki Higashitani ,  Hao Fang ,  Gerrit Jan Hemink

发明人： Tuan D. Pham ,  Masaaki Higashitani ,  Hao Fang ,  Gerrit Jan Hemink

IPC分类号： G11C16/06

CPC分类号： G11C16/0483 ,  H01L23/5222 ,  H01L27/105 ,  H01L27/115 ,  H01L27/11526 ,  H01L27/11534 ,  H01L2924/0002 ,  H01L2924/00

摘要： A NAND flash memory device incorporates a unique booster plate design. The booster plate is biased during read and program operations and the coupling to the floating gates in many cases reduces the voltage levels necessary to program and read the charge stored in the gates. The booster plate also shields against unwanted coupling between floating gates. Self boosting, local self boosting, and erase area self boosting modes used with the unique booster plate further improve read/write reliability and accuracy. A more compact and reliable memory device can hence be realized according to the present invention.

摘要翻译： NAND闪存器件采用独特的增压板设计。 升压板在读取和编程操作期间被偏置，并且在许多情况下与浮动栅极的耦合降低了编程和读取存储在栅极中的电荷所需的电压电平。 升压板还屏蔽浮动栅极之间的不必要的耦合。 自升压，局部自升压，以及独特升压板使用的擦除区域自升压模式，进一步提高了读/写可靠性和精度。 因此，根据本发明可以实现更紧凑和可靠的存储器件。

公开(公告)号：US07167330B2

公开(公告)日：2007-01-23

申请号：US11100162

申请日：2005-04-06

申请人： Carl F. Elliott ,  Hao Fang ,  Ross S. Wilson

发明人： Carl F. Elliott ,  Hao Fang ,  Ross S. Wilson

IPC分类号： G11B5/03

CPC分类号： G11B20/1403 ,  G11B5/012 ,  G11B20/00086 ,  G11B20/0021 ,  G11B20/00579 ,  G11B20/10009 ,  G11B20/10425 ,  G11B2020/10898 ,  G11B2220/2516

摘要： A recording system stores recording cycle information identifying the parameters for recording user data on a particular data sector. During a subsequent operation, the recording system employs the recording cycle information to select a different set of parameters for recording new user data at the particular data sector. One of the parameters might identify a recorded pattern in a balance pad at the data sector, and another one of the parameters might identify a scrambler seed value. By employing a different set of recording parameters for each occurrence of recording user data at the particular sector, sample timing of, for example, a read channel might be based on an average of easy and hard transitions.

摘要翻译： 记录系统存储识别用于在特定数据扇区上记录用户数据的参数的记录周期信息。 在随后的操作期间，记录系统采用记录周期信息来选择用于在特定数据扇区记录新用户数据的不同参数集合。 参数中的一个可以识别数据扇区中的平衡衬垫中的记录模式，另一个参数可以识别加扰器种子值。 通过对特定扇区的记录用户数据的每次出现采用不同的记录参数集合，例如读通道的采样定时可以基于简单和硬转换的平均值。

公开(公告)号：US07141469B2

公开(公告)日：2006-11-28

申请号：US10967198

申请日：2004-10-19

申请人： Jung-Cheng Kao ,  Hao Fang

发明人： Jung-Cheng Kao ,  Hao Fang

IPC分类号： H01L21/8238

CPC分类号： H01L28/60 ,  H01L27/0629

摘要： A method of forming poly insulator poly capacitors by using self-aligned salicide process for mixed mode analog devices. These capacitors are formed in the self-aligned salicide process as stacked poly insulator poly (PIP) capacitors. In the self-aligned salicide process, a self-aligned salicide block process is needed to protect the the salicide formation process from electrostatic discharge (ESD) devices such as resistors or capacitors. The oxide layer of the self-aligned salicide block is used as the dielectric layer of the capacitors to form the PIP capacitor. Therefore, some process steps are omitted due to the formation of the PIP capacitors.

摘要翻译： 通过对混合模式模拟装置使用自对准自对准硅化物工艺形成多晶硅绝缘体多晶硅电容器的方法。 这些电容器在自对准的自对准硅化物工艺中形成为堆叠的多晶硅绝缘体聚（PIP）电容器。 在自对准的自对准硅化物工艺中，需要自对准的自对准硅化物阻挡工艺来保护自对准硅化物形成工艺免受例如电阻器或电容器的静电放电（ESD）器件的影响。 自对准硅化物块的氧化物层用作电容器的电介质层以形成PIP电容器。 因此，由于形成PIP电容器，省略了一些处理步骤。

公开(公告)号：US20050174668A1

公开(公告)日：2005-08-11

申请号：US10776701

申请日：2004-02-11

申请人： Hao Fang ,  Cameron Rabe

发明人： Hao Fang ,  Cameron Rabe

IPC分类号： G11B5/00 ,  G11B5/012 ,  G11B5/09

CPC分类号： G11B5/012 ,  G11B2005/0013

摘要： An impedance matched write circuit is provided that shunts one or more matching resistors. The impedance matched write circuit includes an interconnect for connecting to a write head and at least one resistor between a control voltage and the interconnect for impedance matching to the interconnect. A transistor can be connected across the resistor to shunt current that would otherwise pass through the resistor during an overshoot mode. The transistor may be a PMOS transistor or a combination of PMOS and NMOS transistors. A gate voltage of the transistor is controlled by a source such that the transistor is turned on in an overshoot mode and turned off during a steady state mode.

摘要翻译： 提供阻抗匹配写电路，其分流一个或多个匹配电阻器。 阻抗匹配写入电路包括用于连接到写入头的互连和用于与互连的阻抗匹配的控制电压和互连之间的至少一个电阻器。 晶体管可以跨过电阻连接，以分流电流，否则在过冲模式下电流将通过电阻。 晶体管可以是PMOS晶体管或PMOS和NMOS晶体管的组合。 晶体管的栅极电压由源极控制，使得晶体管以过冲模式导通，并在稳态模式期间截止。

公开(公告)号：US06492229B2

公开(公告)日：2002-12-10

申请号：US09729516

申请日：2000-12-04

申请人： Masaaki Higashitani ,  Toru Ishigaki ,  Hao Fang

发明人： Masaaki Higashitani ,  Toru Ishigaki ,  Hao Fang

IPC分类号： H01L218247

CPC分类号： H01L27/11521 ,  H01L27/115 ,  H01L27/11524

摘要： A semiconductor device having reduced field oxide recess and method of fabrication is disclosed. The method of fabricating the semiconductor device begins by performing an HF dip process on a substrate after field oxidation followed by performing a select gate oxidation. Thereafter, a core implant and a field implant are performed. After the implants, a tunnel oxide mask is deposited. The select gate oxide is then etched in areas uncovered by the tunnel oxide mask, and tunnel oxidation is performed.

摘要翻译： 公开了一种具有减小的场氧化物凹陷和制造方法的半导体器件。 制造半导体器件的方法是通过在场氧化之后对衬底进行HF浸渍法，然后进行选择栅极氧化而开始的。 此后，进行核心植入和场植入。 在植入物之后，沉积隧道氧化物掩模。 然后在不被隧道氧化物掩模覆盖的区域中蚀刻选择栅极氧化物，并且执行隧道氧化。

公开(公告)号：US06448593B1

公开(公告)日：2002-09-10

申请号：US09491532

申请日：2000-01-26

申请人： Masaaki Higashitani ,  Hao Fang

发明人： Masaaki Higashitani ,  Hao Fang

IPC分类号： H01L2902

CPC分类号： H01L29/788 ,  H01L21/28273 ,  H01L27/0266

摘要： The present invention provides a method and apparatus for providing a polysilicon type-1 ESD transistor in a flash memory chip. The method and apparatus include providing a select gate transistor that includes a gate, a floating gate, a medium doped junction, and a source and drain. The method and apparatus further include forming the source and drain by performing a lightly doped drain (LDD) mask and etch, performing a LDD spacer deposition and LDD spacer etch, and performing a N+ implant mask and a N+ implant.

摘要翻译： 本发明提供一种用于在闪存芯片中提供多晶硅型1型ESD晶体管的方法和装置。 该方法和装置包括提供包括栅极，浮动栅极，中等掺杂结以及源极和漏极的选择栅极晶体管。 所述方法和装置还包括通过执行轻掺杂漏极（LDD）掩模和蚀刻，执行LDD间隔物沉积和LDD间隔物蚀刻以及执行N +注入掩模和N +注入来形成源极和漏极。