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    Wafer bonded virtual substrate and method for forming the same
    4.
    发明申请
    Wafer bonded virtual substrate and method for forming the same 审中-公开
    晶圆粘结虚拟基板及其形成方法

    公开(公告)号：US20050085049A1

    公开(公告)日：2005-04-21

    申请号：US11004948

    申请日：2004-12-07

    申请人： Harry Atwater ,  James Zahler ,  Anna Morral

    发明人： Harry Atwater ,  James Zahler ,  Anna Morral

    IPC分类号： H01L21/00 ,  H01L21/18 ,  H01L21/30 ,  H01L21/302 ,  H01L21/46 ,  H01L21/461 ,  H01L21/76 ,  H01L31/0328 ,  H01L31/0392 ,  H01L31/109 ,  H01L31/18

    CPC分类号： H01L21/187 ,  H01L21/02096 ,  H01L21/30604 ,  H01L21/30612 ,  H01L21/30625 ,  H01L31/0392 ,  H01L31/03925 ,  H01L31/18 ,  Y02E10/50 ,  Y10S438/933

    摘要： A method of forming a virtual substrate comprised of an optoelectronic device substrate and handle substrate comprises the steps of initiating bonding of the device substrate to the handle substrate, improving or increasing the mechanical strength of the device and handle substrates, and thinning the device substrate to leave a single-crystal film on the virtual substrate such as by exfoliation of a device film from the device substrate. The handle substrate is typically Si or other inexpensive common substrate material, while the optoelectronic device substrate is formed of more expensive and specialized electro-optic material. Using the methodology of the invention a wide variety of thin film electro-optic materials of high quality can be bonded to inexpensive substrates which, serve as the mechanical support for an optoelectronic device layer fabricated in the thin film electro-optic material.

    摘要翻译： 形成由光电子器件基板和手柄基板构成的虚拟基板的方法包括以下步骤：引发装置基板与手柄基板的接合，改善或增加装置的机械强度和处理基板，以及使装置基板变薄 在虚拟基板上留下单晶膜，例如通过从器件衬底剥离器件膜。 手柄基板通常为Si或其它便宜的普通基板材料，而光电器件基板由更昂贵和专门的电光材料形成。 使用本发明的方法，可以将各种各样的高质量的薄膜电光材料粘合到便宜的基板上，这些基板用作在薄膜电光材料中制造的光电子器件层的机械支撑。

    Bonded substrate and method of making same
    5.
    发明申请
    Bonded substrate and method of making same 有权
    粘结基材及其制备方法

    公开(公告)号：US20060208341A1

    公开(公告)日：2006-09-21

    申请号：US11430160

    申请日：2006-05-09

    申请人： Harry Atwater ,  James Zahler

    发明人： Harry Atwater ,  James Zahler

    IPC分类号： H01L31/117

    CPC分类号： H01L21/76254 ,  H01L21/187 ,  H01L31/0304 ,  H01L31/0392 ,  H01L31/0687 ,  H01L31/0693 ,  H01L31/18 ,  H01L31/1852 ,  Y02E10/544 ,  Y10S438/933

    摘要： Ge/Si and other nonsilicon film heterostructures are formed by hydrogen-induced exfoliation of the Ge film which is wafer bonded to a cheaper substrate, such as Si. A thin, single-crystal layer of Ge is transferred to Si substrate. The bond at the interface of the Ge/Si heterostructures is covalent to ensure good thermal contact, mechanical strength, and to enable the formation of an ohmic contact between the Si substrate and Ge layers. To accomplish this type of bond, hydrophobic wafer bonding is used, because as the invention demonstrates the hydrogen-surface-terminating species that facilitate van der Waals bonding evolves at temperatures above 600° C. into covalent bonding in hydrophobically bound Ge/Si layer transferred systems.

    摘要翻译： Ge / Si和其他非硅膜异质结构是通过晶片接合到诸如Si的廉价衬底的Ge膜的氢诱导剥离形成的。 将Ge的薄的单晶层转移到Si衬底。 在Ge / Si异质结构的界面处的键是共价的，以确保良好的热接触，机械强度，并且能够在Si衬底和Ge层之间形成欧姆接触。 为了实现这种类型的键合，使用疏水性晶片结合，因为如本发明所示的那样，促进范德华键的氢表面终止物质在高于600℃的温度下进入共价键，在疏水结合的Ge / Si层中转移 系统。

    Wafer bonded epitaxial templates for silicon heterostructures
    7.
    发明申请
    Wafer bonded epitaxial templates for silicon heterostructures 有权
    用于硅异质结构的晶圆键合外延模板

    公开(公告)号：US20050142879A1

    公开(公告)日：2005-06-30

    申请号：US11004808

    申请日：2004-12-07

    申请人： Harry Atwater ,  James Zahler ,  Anna Fontcubera Morral

    发明人： Harry Atwater ,  James Zahler ,  Anna Fontcubera Morral

    IPC分类号： H01L21/302 ,  H01L21/461 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109

    CPC分类号： H01L21/187 ,  H01L21/30604 ,  H01L21/30612 ,  H01L21/30625 ,  H01L21/76254 ,  H01L31/0392 ,  H01L31/18 ,  H01L33/005 ,  Y02E10/50

    摘要： A heterostructure device layer is epitaxially grown on a virtual substrate, such as an InP/InGaAs/InP double heterostructure. A device substrate and a handle substrate form the virtual substrate. The device substrate is bonded to the handle substrate and is composed of a material suitable for fabrication of optoelectronic devices. The handle substrate is composed of a material suitable for providing mechanical support. The mechanical strength of the device and handle substrates is improved and the device substrate is thinned to leave a single-crystal film on the virtual substrate such as by exfoliation of a device film from the device substrate. An upper portion of the device film exfoliated from the device substrate is removed to provide a smoother and less defect prone surface for an optoelectronic device. A heterostructure is epitaxially grown on the smoothed surface in which an optoelectronic device may be fabricated.

    摘要翻译： 在诸如InP / InGaAs / InP双异质结构的虚拟衬底上外延生长异质结构器件层。 器件衬底和处理衬底形成虚拟衬底。 器件基板结合到手柄基板上，并由适合制造光电器件的材料组成。 手柄基板由适于提供机械支撑的材料组成。 改善了器件和手柄基板的机械强度，并且将器件基板减薄以在虚拟基板上留下单晶膜，例如通过从器件衬底剥离器件膜。 去除从器件衬底剥离的器件膜的上部，以为光电子器件提供更平滑和更不易出现的表面。 在其上可以制造光电器件的平滑表面上外延生长异质结构。