EPITAXIAL FORMATION STRUCTURES AND ASSOCIATED METHODS OF MANUFACTURING SOLID STATE LIGHTING DEVICES
    3.
    发明申请
    EPITAXIAL FORMATION STRUCTURES AND ASSOCIATED METHODS OF MANUFACTURING SOLID STATE LIGHTING DEVICES 有权
    外延形成结构及制造固态照明装置的相关方法

    公开(公告)号:US20110057165A1

    公开(公告)日:2011-03-10

    申请号:US12878815

    申请日:2010-09-09

    申请人: Thomas Pinnington

    发明人: Thomas Pinnington

    IPC分类号: H01L33/04 H01L21/20

    摘要: Epitaxial formation structures and associated methods of manufacturing solid state lighting (“SSL”) devices with target thermal expansion characteristics are disclosed herein. In one embodiment, an SSL device includes a composite structure having a composite CTE temperature dependency, a formation structure on the composite structure, and an SSL structure on the formation structure. The SSL structure has an SSL temperature dependency, and a difference between the composite CTE and SSL temperature dependencies is below 3 ppm/° C. over the temperature range.

    摘要翻译: 本文公开了外延形成结构和制造具有目标热膨胀特性的固态照明(“SSL”)器件的相关方法。 在一个实施例中,SSL设备包括具有复合CTE温度依赖性的复合结构,复合结构上的形成结构以及地层结构上的SSL结构。 SSL结构具有SSL温度依赖性,并且在温度范围内,复合CTE和SSL温度依赖性之间的差异低于3ppm /℃。