公开(公告)号：US06617661B2

公开(公告)日：2003-09-09

申请号：US09485915

申请日：2000-05-17

申请人： Hartmut Michel ,  Bernd Bireckoven ,  Dirk Hoheisel ,  Ning Qu

发明人： Hartmut Michel ,  Bernd Bireckoven ,  Dirk Hoheisel ,  Ning Qu

IPC分类号： H01L2900

CPC分类号： H01L29/87 ,  H01L27/04 ,  H01L29/0684

摘要： A high-voltage component and a method for its manufacture. The component functions to switch currents at high voltages. The component is composed of partial components that are connected in series and are laterally supported on a self-supporting semiconductor wafer. The partial components switch through, for example, at a given voltage applied between a first bridge cathode and an anodic metallization.

摘要翻译： 高压元件及其制造方法。 该组件用于在高电压下切换电流。 该部件由串联连接并横向支撑在自支撑半导体晶片上的部分部件组成。 部分组件例如通过施加在第一桥式阴极和阳极金属化之间的给定电压来切换。

公开(公告)号：US5780877A

公开(公告)日：1998-07-14

申请号：US795624

申请日：1997-02-06

申请人： Bernd Bireckoven ,  Dirk Hoheisel ,  Ning Qu

发明人： Bernd Bireckoven ,  Dirk Hoheisel ,  Ning Qu

IPC分类号： H01L29/74 ,  F02P7/03 ,  H01L31/111

CPC分类号： F02P7/035 ,  H01L31/1113

摘要： A break-over photodiode, designed as a light-sensitive thyristor, can be stacked using a series connection with a plurality of break-over photodiodes, such stacking representing a high-voltage break-over diode. The break-over photodiode can be triggered by lateral illumination in an edge zone, and includes a gate-layer resistivity under the emitter which is greater in an edge zone of the break-over photodiode than in the central zone of the break-over photodiode. The light sensitivity of the laterally illuminatable break-over photodiode is increased by a greater gate-layer resistivity in the edge zone as compared to the central zone.

摘要翻译： 设计为感光晶闸管的断路光电二极管可以使用与多个断开光电二极管的串联连接堆叠，这样堆叠代表高压断路二极管。 断路光电二极管可以通过边缘区域中的横向照明来触发，并且在发射极之下包括栅极层电阻率，其在断开光电二极管的边缘区域比在断开光电二极管的中心区域更大 。 与中心区域相比，侧向可照明的断开光电二极管的光敏度在边缘区域中增加了更大的栅极层电阻率。

公开(公告)号：US6137124A

公开(公告)日：2000-10-24

申请号：US963447

申请日：1997-11-03

申请人： Hartmut Michel ,  Peter Flohrs ,  Christian Pluntke ,  Alfred Goerlach ,  Anton Mindl ,  Ning Qu

发明人： Hartmut Michel ,  Peter Flohrs ,  Christian Pluntke ,  Alfred Goerlach ,  Anton Mindl ,  Ning Qu

IPC分类号： H01L23/58 ,  H01L29/80 ,  H01L29/8605 ,  H01L29/772 ,  H01L29/745 ,  H01L29/808

CPC分类号： H01L29/8605

摘要： A vertical semiconductor component has an integrated switching device, which delivers an electric value correlating with the rear potential. The semiconductor component includes a doping region with a hole, which is free of the doping atoms of the doping region. The hole, when properly sized and contacted, can supply an electric current correlating with the rear potential.

摘要翻译： 垂直半导体部件具有集成开关器件，其提供与后部电势相关的电气值。 半导体元件包括具有空穴的掺杂区，其没有掺杂区的掺杂原子。 该孔在适当的尺寸和接触时可以提供与后方电位相关的电流。

公开(公告)号：US09446083B2

公开(公告)日：2016-09-20

申请号：US14129803

申请日：2012-06-25

申请人： Junwu Xing ,  Ning Qu ,  Yiqian Xing

发明人： Junwu Xing ,  Ning Qu ,  Yiqian Xing

IPC分类号： A01N65/00 ,  A61K36/21 ,  A61K31/20 ,  A61K31/201 ,  A61K31/202 ,  A61K8/37 ,  A61Q17/00 ,  A61Q17/04 ,  A61Q19/00 ,  A61Q19/10 ,  A61K8/97

CPC分类号： A61K36/21 ,  A61K8/37 ,  A61K8/97 ,  A61K31/20 ,  A61K31/201 ,  A61K31/202 ,  A61Q17/00 ,  A61Q17/04 ,  A61Q19/00 ,  A61Q19/005 ,  A61Q19/007 ,  A61Q19/10 ,  A61K2300/00

摘要： A fatty acid composition containing linoleic acid, linolenic acid and oleic acid is provided. Also provided is a fatty acid composition containing linoleic acid, linolenic acid and oleic acid, and at least one selected from palmitinic acid, palmitoleic acid, stearic acid, arachidic acid and docosanoic acid. A plant extract and a pharmaceutical preparation are provided, wherein the pharmaceutical preparation contains an active component including at least one of the fatty acid composition, the plant extract and modified products thereof. Also provided is an application of the fatty acid composition, the plant extract and the pharmaceutical preparation in multiple fields. The pharmaceutical preparation may function to repair various wounds and traumas in skin, mucosa, lumina and muscular tissues.

摘要翻译： 提供含有亚油酸，亚麻酸和油酸的脂肪酸组合物。 还提供了含有亚油酸，亚麻酸和油酸的脂肪酸组合物，以及选自棕榈酸，棕榈油酸，硬脂酸，花生酸和二十二烷酸中的至少一种。 提供植物提取物和药物制剂，其中所述药物制剂含有包含脂肪酸组合物，植物提取物及其改性产物中的至少一种的活性成分。 还提供了脂肪酸组合物，植物提取物和药物制剂在多个领域中的应用。 药物制剂可用于修复皮肤，粘膜，管腔和肌肉组织中的各种伤口和创伤。

公开(公告)号：US20140287076A1

公开(公告)日：2014-09-25

申请号：US14129803

申请日：2012-06-25

申请人： Junwu Xing ,  Ning Qu ,  Yiqian Xing

发明人： Junwu Xing ,  Ning Qu ,  Yiqian Xing

IPC分类号： A61K36/21 ,  A61K31/202 ,  A61K31/20 ,  A61K31/201

CPC分类号： A61K36/21 ,  A61K8/37 ,  A61K8/97 ,  A61K31/20 ,  A61K31/201 ,  A61K31/202 ,  A61Q17/00 ,  A61Q17/04 ,  A61Q19/00 ,  A61Q19/005 ,  A61Q19/007 ,  A61Q19/10 ,  A61K2300/00

摘要： A fatty acid composition containing linoleic acid, linolenic acid and oleic acid is provided. Also provided is a fatty acid composition containing linoleic acid, linolenic acid and oleic acid, and at least one selected from palmitinic acid, palmitoleic acid, stearic acid, arachidic acid and docosanoic acid. A plant extract and a pharmaceutical preparation are provided, wherein the pharmaceutical preparation contains an active component including at least one of the fatty acid composition, the plant extract and modified products thereof. Also provided is an application of the fatty acid composition, the plant extract and the pharmaceutical preparation in multiple fields. The pharmaceutical preparation may function to repair various wounds and traumas in skin, mucosa, lumina and muscular tissues.

摘要翻译： 提供含有亚油酸，亚麻酸和油酸的脂肪酸组合物。 还提供了含有亚油酸，亚麻酸和油酸的脂肪酸组合物，以及选自棕榈酸，棕榈油酸，硬脂酸，花生酸和二十二烷酸中的至少一种。 提供植物提取物和药物制剂，其中所述药物制剂含有包含脂肪酸组合物，植物提取物及其改性产物中的至少一种的活性成分。 还提供了脂肪酸组合物，植物提取物和药物制剂在多个领域中的应用。 药物制剂可用于修复皮肤，粘膜，管腔和肌肉组织中的各种伤口和创伤。

公开(公告)号：US20140239435A1

公开(公告)日：2014-08-28

申请号：US14236604

申请日：2012-07-19

申请人： Ning Qu ,  Alfred Goerlach

发明人： Ning Qu ,  Alfred Goerlach

IPC分类号： H01L29/06 ,  H01L29/868 ,  H01L29/872

CPC分类号： H01L29/0634 ,  H01L29/0649 ,  H01L29/66143 ,  H01L29/868 ,  H01L29/872

摘要： A semiconductor chip has an n+-doped substrate, above which an n-doped epilayer having trenches is introduced, the trenches being filled with p-doped semiconductor material and in each case having a highly p-doped region at their top side, such that an alternating arrangement of n-doped regions having a first width and p-doped regions having a second width is present. A first metal layer functioning as an anode is provided on the front side of the chip and forms a Schottky contact with the n-doped epilayer and forms an ohmic contact with the highly p-doped regions. A second metal layer which represents an ohmic contact and functioning as a cathode is formed on the rear side of the semiconductor chip. A dielectric layer is provided between each n-doped region and an adjacent p-doped region.

摘要翻译： 半导体芯片具有n +掺杂的衬底，其上引入具有沟槽的n掺杂外延层，沟槽被p掺杂半导体材料填充，并且在每种情况下在其顶侧具有高p掺杂区域，使得 存在具有第一宽度的n掺杂区域和具有第二宽度的p掺杂区域的交替布置。 用作阳极的第一金属层设置在芯片的正面，并与n掺杂的外延层形成肖特基接触，并与高p掺杂区形成欧姆接触。 表示欧姆接触并用作阴极的第二金属层形成在半导体芯片的后侧。 在每个n掺杂区域和相邻的p掺杂区域之间提供介电层。

公开(公告)号：US08578483B2

公开(公告)日：2013-11-05

申请号：US12221109

申请日：2008-07-31

申请人： Arvind Seshadri ,  Ning Qu ,  Adrian Perrig

发明人： Arvind Seshadri ,  Ning Qu ,  Adrian Perrig

IPC分类号： G06F21/00

CPC分类号： G06F21/57 ,  G06F21/74 ,  G06F2221/2105

摘要： Systems and methods are provided for preventing unauthorized modification of an operating system. The system includes an operating system comprised of kernel code for controlling access to operation of a processing unit. The system further includes an enforcement agent executing at a higher privilege than the kernel code such that any changes to the kernel code are approved by the enforcement agent prior to execution.

摘要翻译： 提供了用于防止对操作系统的未经授权的修改的系统和方法。 该系统包括由用于控制对处理单元的操作的访问的内核代码组成的操作系统。 该系统还包括执行代码比内核代码更高的权限执行，使得在执行之前，执行代理人核准对内核代码的任何更改。

公开(公告)号：US08334179B2

公开(公告)日：2012-12-18

申请号：US12733775

申请日：2008-09-17

申请人： Ning Qu ,  Alfred Goerlach

发明人： Ning Qu ,  Alfred Goerlach

IPC分类号： H01L21/8234

CPC分类号： H01L29/868 ,  H01L29/0611 ,  H01L29/0623 ,  H01L29/161 ,  H01L29/861 ,  H01L29/872 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor system is described, which is made up of a highly n-doped silicon substrate and a first n-silicon epitaxial layer, which is directly contiguous to the highly n-doped silicon substrate, and having a p-doped SiGe layer, which is contiguous to a second n-doped silicon epitaxial layer and forms a heterojunction diode, which is situated above the first n-doped silicon epitaxial layer and in which the pn-junction is situated within the p-doped SiGe layer. The first n-silicon epitaxial layer has a higher doping concentration than the second n-silicon epitaxial layer. Situated between the two n-doped epitaxial layers is at least one p-doped emitter trough, which forms a buried emitter, a pn-junction both to the first n-doped silicon epitaxial layer and also to the second n-doped silicon epitaxial layer being formed, and the at least one emitter trough being completely enclosed by the two epitaxial layers.

摘要翻译： 描述了半导体系统，其由高度n掺杂的硅衬底和与第一n型硅衬底直接相邻并具有p掺杂的SiGe层的第一n型硅外延层组成，其中 与第二n掺杂硅外延层邻接并形成异质结二极管，该异质结二极管位于第一n掺杂硅外延层之上，并且其中pn结位于p掺杂SiGe层内。 第一n硅外延层具有比第二n硅外延层更高的掺杂浓度。 位于两个n掺杂外延层之间的是至少一个p掺杂的发射极沟槽，其形成掩埋发射极，pn结与第一n掺杂硅外延层以及第二n掺杂硅外延层 并且所述至少一个发射极槽被两个外延层完全包围。

公开(公告)号：US20120280353A1

公开(公告)日：2012-11-08

申请号：US13505534

申请日：2010-09-21

申请人： Ning Qu ,  Alfred Goerlach

发明人： Ning Qu ,  Alfred Goerlach

IPC分类号： H01L29/47 ,  H01L21/20

CPC分类号： H01L27/0248 ,  H01L29/866 ,  H01L29/872 ,  H01L29/8725

摘要： A protective element for electronics has at least one Schottky diode and at least one Zener diode which are located between a power supply and the electronics, the anode of the Schottky diode being connected to the power supply and the cathode of the Schottky diode being connected to the electronics, and the cathode and the anode of the Zener diode are connected to ground. The Schottky diode is a trench MOS barrier junction diode or trench MOS barrier Schottky (TMBS) diode or a trench junction barrier Schottky (TJBS) diode and includes an integrated semiconductor arrangement, which has at least one trench MOS barrier Schottky diode and a p-doped substrate, which is used as the anode of the Zener diode.

摘要翻译： 用于电子器件的保护元件具有至少一个肖特基二极管和位于电源和电子器件之间的至少一个齐纳二极管，肖特基二极管的阳极连接到电源，肖特基二极管的阴极连接到 电子器件，齐纳二极管的阴极和阳极连接到地。 肖特基二极管是沟槽MOS势垒结二极管或沟槽MOS势垒肖特基（TMBS）二极管或沟槽结势垒肖特基（TJBS）二极管，并且包括集成半导体布置，其具有至少一个沟槽MOS势垒肖特基二极管和p- 掺杂衬底，用作齐纳二极管的阳极。

公开(公告)号：US20100237456A1

公开(公告)日：2010-09-23

申请号：US12733753

申请日：2008-09-15

申请人： Ning Qu ,  Alfred Goerlach

发明人： Ning Qu ,  Alfred Goerlach

IPC分类号： H01L29/866

CPC分类号： H01L29/0634 ,  H01L29/0619 ,  H01L29/0649 ,  H01L29/872 ,  H01L29/8725

摘要： A semiconductor system having a trench MOS barrier Schottky diode, having an integrated substrate PN diode as a clamping element (TMBS-ub-PN), suitable in particular as a Zener diode having a breakdown voltage of approximately 20V for use in a vehicle generator system, the TMBS-sub-PN being made up of a combination of Schottky diode, MOS structure, and substrate PN diode, and the breakdown voltage of substrate PN diode BV_pn being lower than the breakdown voltage of Schottky diode BV_schottky and the breakdown voltage of MOS structure BV_mos.

摘要翻译： 具有沟槽MOS势垒肖特基二极管的半导体系统，其具有作为钳位元件（TMBS-ub-PN）的集成衬底PN二极管，特别适用于具有大约20V的击穿电压的齐纳二极管，用于车辆发电机系统 TMBS-sub-PN由肖特基二极管，MOS结构和衬底PN二极管的组合构成，并且衬底PN二极管BV_pn的击穿电压低于肖特基二极管BV_肖特基的击穿电压和MOS的击穿电压 结构BV_mos。