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    Method for producing a directional layer by cathode sputtering, and device for implementing the method
    1.
    发明授权
    Method for producing a directional layer by cathode sputtering, and device for implementing the method 有权
    通过阴极溅射制造定向层的方法，以及用于实施该方法的装置

    公开(公告)号：US09587306B2

    公开(公告)日：2017-03-07

    申请号：US11968300

    申请日：2008-01-02

    申请人： Hartmut Rohrmann ,  Hanspeter Friedli ,  Jürgen Weichart ,  Stanislav Kadlec ,  Martin Dubs

    发明人： Hartmut Rohrmann ,  Hanspeter Friedli ,  Jürgen Weichart ,  Stanislav Kadlec ,  Martin Dubs

    IPC分类号： C23C14/34 ,  G11B5/851 ,  H01J37/34

    CPC分类号： C23C14/34 ,  G11B5/851 ,  H01J37/34 ,  H01J37/3447

    摘要： For producing a directional layer for instance with constant nominal directionality, such as a low-retentivity layer with a preferred direction of magnetization or a support layer for such a layer by cathode sputtering on a substrate surface (4), the coating process takes place in a manner whereby particles emanating from a target surface (6) impinge predominantly from directions whose projections onto the substrate surface (4) lies within a preferred angular range surrounding the nominal direction. This is achieved for instance by positioning a collimator (8), encompassing plates (9) that extend at a normal angle to the substrate surface (4) parallel to the nominal direction in front of the substrate surface (4), but in lieu of or in addition to such positioning the location or movement of the substrate surface (4) relative to the target surface (6) can also be suitably adjusted or controlled.

    摘要翻译： 为了产生例如具有恒定标称方向性的定向层，例如具有优选磁化方向的低保持层或用于通过阴极溅射在衬底表面（4）上的这种层的支撑层，涂覆过程发生在 一种从目标表面（6）发出的颗粒主要从其上突出到基板表面（4）上的方向处于围绕标称方向的优选角度范围内的方式。 这例如通过定位准直器（8）来实现，该准直器（8）围绕与基板表面（4）平行于基板表面（4）的标称方向的法向角度延伸的板（9），但代替 或者除了这样的定位之外，还可以适当地调整或控制衬底表面（4）相对于目标表面（6）的位置或移动。

    Arc suppression and pulsing in high power impulse magnetron sputtering (HIPIMS)
    2.
    发明授权
    Arc suppression and pulsing in high power impulse magnetron sputtering (HIPIMS) 有权
    大功率脉冲磁控溅射（HIPIMS）中的电弧抑制和脉冲

    公开(公告)号：US09355824B2

    公开(公告)日：2016-05-31

    申请号：US11954507

    申请日：2007-12-12

    申请人： Stanislav Kadlec ,  Jürgen Weichart

    发明人： Stanislav Kadlec ,  Jürgen Weichart

    IPC分类号： H01J37/34 ,  H01J37/32 ,  C23C14/35 ,  C23C14/34

    CPC分类号： C23C14/3485 ,  C23C14/35 ,  H01J37/32944 ,  H01J37/3408 ,  H01J37/3444 ,  H01J37/3467

    摘要： An apparatus for generating sputtering of a target to produce a coating on a substrate is provided. The apparatus comprises a magnetron including a cathode and an anode. A power supply is operably connected to the magnetron and at least one capacitor is operably connected to the power supply. The apparatus also includes an inductance operably connected to the at least one capacitor. A first switch and a second switch are also provided. The first switch operably connects the power supply to the magnetron to charge the magnetron and the first switch is configured to charge the magnetron according to a first pulse. The second switch is operably connected to discharge the magnetron. The second switch is configured to discharge the magnetron according to a second pulse.

    摘要翻译： 提供了一种用于产生靶的溅射以在基底上产生涂层的装置。 该装置包括包括阴极和阳极的磁控管。 电源可操作地连接到磁控管，并且至少一个电容器可操作地连接到电源。 该装置还包括可操作地连接到至少一个电容器的电感。 还提供第一开关和第二开关。 第一开关可操作地将电源连接到磁控管以对磁控管充电，并且第一开关被配置为根据第一脉冲对磁控管充电。 第二开关可操作地连接以放电磁控管。 第二开关被配置为根据第二脉冲放电磁控管。

    Target shaping
    3.
    发明授权
    Target shaping 有权

    公开(公告)号：US09611537B2

    公开(公告)日：2017-04-04

    申请号：US13032922

    申请日：2011-02-23

    申请人： Stanislav Kadlec ,  Jürgen Weichart

    发明人： Stanislav Kadlec ,  Jürgen Weichart

    IPC分类号： C23C14/00 ,  C23C14/34

    CPC分类号： C23C14/3407 ,  H01J37/3405 ,  H01J37/3423

    摘要： A target for a physical vapor deposition system includes a top, a bottom, and a base. The base essentially is defined by the surface of the target to be sputtered. A first, inner ring and a second, outer ring extend from the base. Each ring has an inner side and an outer side, wherein sputtering is concentrated on the outer sides by means of a magnet arrangement adjacent to the target.

    RF substrate bias with high power impulse magnetron sputtering (HIPIMS)
    4.
    发明授权
    RF substrate bias with high power impulse magnetron sputtering (HIPIMS) 有权
    高功率脉冲磁控溅射（HIPIMS）的RF衬底偏置

    公开(公告)号：US08435389B2

    公开(公告)日：2013-05-07

    申请号：US11954490

    申请日：2007-12-12

    申请人： Stanislav Kadlec ,  Jürgen Weichart

    发明人： Stanislav Kadlec ,  Jürgen Weichart

    IPC分类号： C23C14/00 ,  C23C14/32 ,  C25B9/00 ,  C25B11/00 ,  C25B13/00

    CPC分类号： C23C14/3485 ,  C23C14/35 ,  H01J37/32944 ,  H01J37/3408 ,  H01J37/3444 ,  H01J37/3467

    摘要： An apparatus for generating sputtering of a target to produce a coating on a substrate with a current density on a cathode of a magnetron between 0.1 and 10 A/cm2 is provided. The apparatus comprises a power supply that is operably connected to the magnetron and at least one capacitor is operably connected to the power supply. A first switch is also provided. The first switch operably connects the power supply to the magnetron to charge the magnetron and the first switch is configured to charge the magnetron according to a first pulse. An electrical bias device is operably connected to the substrate and configured to apply a substrate bias.

    摘要翻译： 提供了一种用于产生靶的溅射以在磁控管的阴极上的电流密度在0.1至10A / cm 2之间的衬底上产生涂层的设备。 该装置包括可操作地连接到磁控管的电源，并且至少一个电容器可操作地连接到电源。 还提供第一开关。 第一开关可操作地将电源连接到磁控管以对磁控管充电，并且第一开关被配置为根据第一脉冲对磁控管充电。 电偏置装置可操作地连接到衬底并且被配置为施加衬底偏置。

    TARGET SHAPING
    5.
    发明申请
    TARGET SHAPING 有权
    目标造型

    公开(公告)号：US20110203920A1

    公开(公告)日：2011-08-25

    申请号：US13032922

    申请日：2011-02-23

    申请人： Stanislav Kadlec ,  Jürgen Weichart

    发明人： Stanislav Kadlec ,  Jürgen Weichart

    IPC分类号： C23C14/35 ,  C23C14/34

    CPC分类号： C23C14/3407 ,  H01J37/3405 ,  H01J37/3423

    摘要： A target for a physical vapor deposition system includes a top, a bottom, and a base. The base essentially is defined by the surface of the target to be sputtered. A first, inner ring and a second, outer ring extend from the base. Each ring has an inner side and an outer side, wherein sputtering is concentrated on the outer sides by means of a magnet arrangement adjacent to the target.

    摘要翻译： 物理气相沉积系统的靶包括顶部，底部和底部。 基体基本上由要溅射的靶的表面限定。 第一内环和第二外环从基座延伸。 每个环具有内侧和外侧，其中溅射通过与靶相邻的磁体排列集中在外侧上。

    RF SPUTTERING ARRANGEMENT
    9.
    发明申请
    RF SPUTTERING ARRANGEMENT 有权
    RF射频安排

    公开(公告)号：US20100155238A1

    公开(公告)日：2010-06-24

    申请号：US12644596

    申请日：2009-12-22

    申请人： Jürgen Weichart ,  Heinz Felzer

    发明人： Jürgen Weichart ,  Heinz Felzer

    IPC分类号： C23C14/35 ,  C23C14/34

    CPC分类号： H01J37/34 ,  H01J37/32541 ,  H01J37/3408 ,  H01J37/3438

    摘要： Apparatus for sputtering comprises a vacuum chamber, at least one first electrode having a first surface arranged in the vacuum chamber, a counter electrode having a surface arranged in the vacuum chamber and a RF generator. The RF generator is configured to apply a RF electric field across the at least one first electrode and the counter electrode so as to ignite a plasma between the first electrode and the counter electrode. The counter electrode comprises at least two cavities in communication with the vacuum chamber. the cavities each have dimensions such that a plasma can be formed in the cavity.

    摘要翻译： 用于溅射的装置包括真空室，具有布置在真空室中的第一表面的至少一个第一电极，具有布置在真空室中的表面的对电极和RF发生器。 RF发生器被配置为在所述至少一个第一电极和对电极之间施加RF电场，以点燃第一电极和对电极之间的等离子体。 对电极包括与真空室连通的至少两个空腔。 空腔各自具有这样的尺寸，使得能够在空腔中形成等离子体。