摘要:
The invention relates to an optical recording medium comprising a substrate, a recording layer and optionally one or more reflecting layers, wherein the recording layer comprises a compound of formula (I). For the detailed definitions of the further substituents, see the description. Recording and playback are effected especially at a wavelength of from 300 to 500 nm, for example using a blue laser. The recording and playback quality is excellent and allows a high storage density even at high speeds.
摘要:
The invention relates to an optical recording medium comprising a substrate, a recording layer and optionally one or more reflecting layers, wherein the recording layer comprises a compound of formula (I) or a tautomeric or mesomeric form thereof, wherein G1 and G2 are each independently of the other C(R5) or N; M1 is a lanthanide or transition metal of groups 4 to 10; P is a phthalocyanino diradical; and R1 to R5 are substituents as defined in the description and the claims. Recording and playback are effected especially at a wavelength of from 350 to 500 nm, for example using a blue laser. The recording and playback quality is excellent and allows a high storage density.
摘要:
The invention relates to novel optical recording media, which comprise particular novel metal chelates and have an excellent recording and playback quality, especially at a wavelength of from 300 to 500 nm.
摘要:
The invention relates to novel optical recording materials that comprise specific and in some cases novel diketone enamines or metal chelates thereof and that have excellent recording and playback quality especially at a wavelength of 350-500 nm. The invention accordingly relates to an optical recording medium comprising a substrate, a recording layer and optionally a reflecting layer, wherein the recording layer comprises a compound of formula (I), wherein M is hydrogen, aluminium or, preferably, a transition metal, which may in addition be coordinated with one or more further ligands and/or, for balancing out an excess charge, where applicable, may have an electrostatic interaction with one or more further ions inside or outside the coordination sphere, but M in formulae (Ib) and (Ic) is not hydrogen, Q is C—H, N or C—R6, it being possible for the stereochemistry of the C=Q double bond to be either E or Z. For the exact definitions of R1 to R6 reference should be made to the description. Also claimed are the novel compounds, especially tetracoordinated chelates, and a process for the preparation thereof.
摘要:
The present invention relates to compounds of the formula (I) wherein the substituents are as defined in claim 1, and their use as organic semiconductor in organic devices, like diodes, organic field effect transistors and/or a solar cells. The compounds of the formula I have excellent solubility in organic solvents. High efficiency of energy conversion, excellent field-effect mobility, good on/off current ratios and/or excellent stability can be observed, when said compounds are used in semiconductor devices or organic photovoltaic (PV) devices (solar cells).
摘要:
The present invention relates to compounds of the formula (I) wherein the substituents are as defined in claim 1, and their use as organic semiconductor in organic devices, like diodes, organic field effect transistors and/or a solar cells. The compounds of the formula I have excellent solubility in organic solvents. High efficiency of energy conversion, excellent field-effect mobility, good on/off current ratios and/or excellent stability can be observed, when said compounds are used in semiconductor devices or organic photovoltaic (PV) devices (solar cells).
摘要:
A semiconducting layer comprising a non-polymeric quinoid heteroacene compound of the formula (I) wherein X stands for O, S or NR, each of R, R1, R2, R3, R4, R5, R6, R7, R8 being independently selected from hydrogen and an organic residue, or 2 or more thereof together forming one or more annealed rings, which may be substituted or unsubstituted, carbocyclic or helerocyclic, aromatic, quinoid or aliphatic, may be used e.g. for the manufacture of a diode, an organic field effect transistor, an organic thin film transistor, or a device containing a diode and/or an organic field effect transistor and/or organic thin film transistor.
摘要:
A novel semiconductor device comprises an azaperylene organic semiconductor of the formula I (I) wherein each of R1, R2, R3 and R4 independently is selected from H, unsubstituted or substituted alkyl, unsubstituted or substituted alkenyl, unsubstituted or substituted alkynyl, unsubstituted or substituted aryl, halogen, Si(RH)3, XR6; or one or more of R1 and R2, R2 and R3, R3 and R4, together with the carbon atoms they are bonding to, form a saturated or unsaturated, unsubstituted or substituted carbocyclic or heterocyclic ring; R5 is OR7, SR7, NR7R8, unsubstituted or substituted alkyl, unsubstituted or substituted alkenyl, unsubstituted or substituted alkynyl, or unsubstituted or substituted aryl; R6 is Si(R11)3, unsubstituted or substituted alkyl, unsubstituted or substituted alkenyl, unsubstituted or substituted alkynyl, unsubstituted or substituted aryl; R7 is H, unsubstituted or substituted alkyl, unsubstituted or substituted alkenyl, unsubstituted or substituted alkynyl, unsubstituted or substituted aryl; X is O, S, NR8; Rδ is H, unsubstituted or substituted alkyl, unsubstituted or substituted alkenyl, unsubstituted or substituted alkynyl, unsubstituted or substituted aryl, R11 being C1-C20-alkyl or -alkoxy.
摘要:
A semiconducting layer comprising a non-polymeric quinoid heteroacene compound of the formula (I) wherein X stands for O, S or NR, each of R, R1, R2, R3, R4, R5, R6, R7, R8 being independently selected from hydrogen and an organic residue, or 2 or more thereof together forming one or more annealed rings, which may be substituted or unsubstituted, carbocyclic or helerocyclic, aromatic, quinoid or aliphatic, may be used e.g. for the manufacture of a diode, an organic field effect transistor, an organic thin film transistor, or a device containing a diode and/or an organic field effect transistor and/or organic thin film transistor.