摘要:
An optoelectronic component comprising an optoelectronic semiconductor chip (104) having a contact side (106) and a radiation coupling-out side (108) situated opposite; a chip carrier (102), on which the semiconductor chip (104) is applied via its contact side (106); a radiation conversion element (110) applied on the radiation coupling-out side (108); and a reflective potting compound (112), which is applied on the chip carrier (102) and laterally encloses the semiconductor chip (104) and the radiation conversion element (110); wherein the potting compound (112) adjoins an upper edge of the radiation conversion element (110) in a substantially flush fashion, such that a top side of the radiation conversion element (110) is free of the potting compound (112).
摘要:
A method of producing an optoelectronic component includes providing a cavity; introducing a liquid matrix material with phosphor particles distributed therein into the cavity; introducing a semiconductor chip into the matrix material; sedimenting the phosphor particles in the matrix material; and curing the matrix material, wherein a conversion layer including phosphor particles is produced, said conversion layer being arranged on the semiconductor chip.
摘要:
An optoelectronic semi-conductor component includes a first carrier having a top side and an underside laying opposite the top side of the first carrier, wherein the first carrier has a first and a second region; at least one optoelectronic semiconductor chip arranged at the top side on the first carrier; and at least one electronic component arranged in the second region at the underside of the first carrier, wherein the first region has a greater thickness in a vertical direction than the second region, wherein, at the underside, the first region projects beyond the second region in a vertical direction, and the at least one electronic component is electrically conductively connected to the at least one optoelectronic semi-conductor chip.