公开(公告)号：US06667248B2

公开(公告)日：2003-12-23

申请号：US09949414

申请日：2001-09-05

申请人： Hichem M'Saad ,  Chad Peterson ,  Zhuang Li ,  Anchuan Wang ,  Farhad Moghadam

发明人： Hichem M'Saad ,  Chad Peterson ,  Zhuang Li ,  Anchuan Wang ,  Farhad Moghadam

IPC分类号： H01L2131

CPC分类号： H01L21/02131 ,  C23C16/401 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31629

摘要： A method is provided for forming a fluorinated silicate glass layer with HDP-CVD having a lower dielectric constant without compromising the mechanical properties of hardness and compressive stress. A gaseous mixture comprising a silicon-containing gas, an oxygen-containing gas, and a fluorine-containing gas is provided to a process chamber. The ratio of the flow rate of the fluorine-containing gas to the flow rate of the silicon-containing gas is greater than 0.65. A high-density plasma is generated from the gaseous mixture by applying a source RF power having a power density less than 12 W/cm2. A bias is applied to a substrate in the process chamber at a bias power density greater than 0.8 W/cm2 and less than 2.4 W/cm2. The fluorinated silicate glass layer is deposited onto the substrate using the high-density plasma.

摘要翻译： 提供了一种用于在不影响硬度和压缩应力的机械性能的情况下形成具有较低介电常数的HDP-CVD的氟化硅酸盐玻璃层的方法。 将包含含硅气体，含氧气体和含氟气体的气体混合物提供到处理室。 含氟气体的流量与含硅气体的流量比大于0.65。 通过施加功率密度小于12W / cm 2的源RF功率，从气体混合物产生高密度等离子体。 以大于0.8W / cm 2且小于2.4W / cm 2的偏置功率密度对处理室中的衬底施加偏压。 使用高密度等离子体将氟化硅酸盐玻璃层沉积在基板上。

公开(公告)号：US06521546B1

公开(公告)日：2003-02-18

申请号：US09593851

申请日：2000-06-14

申请人： Michael Barnes ,  Hichem M'Saad ,  Huong Thanh Nguyen ,  Farhad Moghadam

发明人： Michael Barnes ,  Hichem M'Saad ,  Huong Thanh Nguyen ,  Farhad Moghadam

IPC分类号： H01L2131

CPC分类号： H01L21/02131 ,  C23C16/30 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/3127 ,  H01L21/31629

摘要： A method of forming an integrated circuit using a fluoro-organosilicate layer is disclosed. The fluoro-organosilicate layer is formed by applying an electric field to a gas mixture comprising a fluoro-organosilane compound and an oxidizing gas. The fluoro-organosilicate layer is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the fluoro-organosilicate layer is used as a hardmask. In another integrated circuit fabrication process, the fluoro-organosilicate layer is incorporated into a damascene structure.

摘要翻译： 公开了一种使用氟 - 有机硅酸盐层形成集成电路的方法。 通过向包含氟 - 有机硅烷化合物和氧化气体的气体混合物施加电场而形成氟 - 有机硅酸盐层。 氟 - 有机硅酸盐层与集成电路制造工艺兼容。 在一个集成电路制造工艺中，氟 - 有机硅酸盐层用作硬掩模。 在另一集成电路制造工艺中，氟 - 有机硅酸盐层被结合到镶嵌结构中。

公开(公告)号：US06926926B2

公开(公告)日：2005-08-09

申请号：US09953685

申请日：2001-09-10

申请人： Seon-Mee Cho ,  Hichem M'Saad ,  Farhad Moghadam

发明人： Seon-Mee Cho ,  Hichem M'Saad ,  Farhad Moghadam

IPC分类号： C23C16/32 ,  C23C16/507 ,  H01L21/314 ,  C23C16/30

CPC分类号： H01L21/02167 ,  C23C16/325 ,  C23C16/507 ,  H01L21/02274 ,  H01L21/314

摘要： A SiC-based layer is deposited on a substrate having an electrical resistivity between about 1 and 100 Ω cm. The substrate is disposed in a process chamber. A gaseous mixture having a silicon-containing gas and a hydrocarbon-containing gas is flowed to the process chamber. A high-density plasma, having an ion density greater than about 1011 ions/cm3 is generated from the plasma. A small electrical bias, between about 0.65 and 1.30 W/cm2, is applied to the substrate. The low bias compensates for an unexpected cooling that results when depositing the SiC-based layer but is low enough that implantation of hydrogen is minimized.

摘要翻译： 将SiC基层沉积在具有约1和100Ωcm之间的电阻率的基底上。 基板设置在处理室中。 具有含硅气体和含烃气体的气体混合物流入处理室。 从等离子体产生具有大于约10 11 /离子/ cm 3的离子密度的高密度等离子体。 将大约0.65和1.30W / cm 2之间的小的电偏压施加到基底上。 低偏压补偿了当沉积SiC基层时产生意外的冷却，但是足够低以使氢的注入最小化。

公开(公告)号：US06803325B2

公开(公告)日：2004-10-12

申请号：US10120713

申请日：2002-04-10

申请人： Hichem M'Saad ,  Dana Tribula ,  Manoj Vellaikal ,  Farhad Moghadam ,  Sameer Desai

发明人： Hichem M'Saad ,  Dana Tribula ,  Manoj Vellaikal ,  Farhad Moghadam ,  Sameer Desai

IPC分类号： H01L2131

CPC分类号： H01L21/02131 ,  C23C16/401 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31629

摘要： A method of formation of a damascene FSG film with good adhesion to silicon nitride in an HDP-CVD system. Silane (SiH4), silicon tetrafluoride (SiF4), oxygen (O2) and argon (Ar) are used as the reactant gases. SiH4, SiF4, and O2 react to form the FSG. Ar is introduced to promote gas dissociation. All four gases are used for depositing most of the FSG film. SiH4 is not used during deposition of the interfacial part of the FSG film. The interfacial part of the FSG film refers either to the topmost portion, if silicon nitride is to be deposited on top of the FSG or the bottom portion if the FSG is to be deposited on top of silicon nitride. Using SiH4 with the SiF4 tends to mitigate the destructive effects of SiF4 throughout most of the deposition. By removing the SiH4 from the deposition of the interfacial part of the FSG film less hydrogen is incorporated into the film in the interfacial region and adhesion to overlying or underlying silicon nitride is improved.

摘要翻译： 在HDP-CVD系统中形成对氮化硅具有良好粘附性的镶嵌FSG膜的方法。 使用硅烷（SiH 4），四氟化硅（SiF 4），氧（O 2）和氩（Ar）作为反应气体。 SiH4，SiF4和O2反应形成FSG。 引入Ar来促进气体分解。 所有四种气体都用于沉积大部分FSG膜。 在沉积FSG膜的界面部分期间不使用SiH4。 如果要将FSG沉积在氮化硅的顶部，则FSG膜的界面部分指的是最高部分，如果氮化硅沉积在FSG或底部的顶部。 SiF4与SiF4的共同作用倾向于减少SiF4在大部分沉积过程中的破坏作用。 通过从FSG膜的界面部分的沉积中除去SiH 4，在界面区域中较少的氢被引入到膜中，并且改善了覆盖或下面的氮化硅的粘合性。

公开(公告)号：US06410457B1

公开(公告)日：2002-06-25

申请号：US09569744

申请日：2000-05-11

申请人： Hichem M'Saad ,  Dana Tribula ,  Manoj Vellaikal ,  Farhad Moghadam ,  Sameer Desai

发明人： Hichem M'Saad ,  Dana Tribula ,  Manoj Vellaikal ,  Farhad Moghadam ,  Sameer Desai

IPC分类号： H01L2131

CPC分类号： H01L21/02131 ,  C23C16/401 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31629

摘要： A method of formation of a damascene FSG film with good adhesion to silicon nitride in an HDP-CVD system. Silane (SiH4), silicon tetrafluoride (SiF4), oxygen (O2) and argon (Ar) are used as the reactant gases. SiH4, SiF4, and O2 react to form the FSG. Ar is introduced to promote gas dissociation. All four gases are used for depositing most of the FSG film. SiH4 is not used during deposition of the interfacial part of the FSG film. The interfacial part of the FSG film refers either to the topmost portion, if silicon nitride is to be deposited on top of the FSG or the bottom portion if the FSG is to be deposited on top of silicon nitride. Using SiH4 with the SiF4 tends to mitigate the destructive effects of SiF4 throughout most of the deposition. By removing the SiH4 from the deposition of the interfacial part of the FSG film less hydrogen is incorporated into the film in the interfacial region and adhesion to overlying or underlying silicon nitride is improved.

摘要翻译： 在HDP-CVD系统中形成对氮化硅具有良好粘附性的镶嵌FSG膜的方法。 使用硅烷（SiH 4），四氟化硅（SiF 4），氧（O 2）和氩（Ar）作为反应气体。 SiH4，SiF4和O2反应形成FSG。 引入Ar来促进气体分解。 所有四种气体都用于沉积大部分FSG膜。 在沉积FSG膜的界面部分期间不使用SiH4。 如果要将FSG沉积在氮化硅的顶部，则FSG膜的界面部分指的是最高部分，如果氮化硅沉积在FSG或底部的顶部。 SiF4与SiF4的共同作用倾向于减少SiF4在大部分沉积过程中的破坏作用。 通过从FSG膜的界面部分的沉积中除去SiH 4，在界面区域中较少的氢被引入到膜中，并且改善了覆盖或下面的氮化硅的粘合性。

公开(公告)号：US20060207294A1

公开(公告)日：2006-09-21

申请号：US11422278

申请日：2006-06-05

申请人： Hichem M'Saad ,  Anchuan Wang ,  Sang Ahn

发明人： Hichem M'Saad ,  Anchuan Wang ,  Sang Ahn

IPC分类号： C03B37/018 ,  C03B37/022

CPC分类号： G02B6/132 ,  C23C16/401 ,  C23C16/505 ,  G02B2006/12169 ,  G02B2006/12176

摘要： Embodiments of the present invention provide a highly uniform low cost production worthy solution for manufacturing low propagation loss optical waveguides on a substrate. In one embodiment, the present invention provides a method of forming a PSG optical waveguide on an undercladding layer of a substrate that includes forming at least one silicate glass optical core on said undercladding layer using a plasma enhanced chemical vapor deposition process including a silicon source gas, an oxygen source gas, and a phosphorus source gas, wherein the oxygen source gas and silicon source gas have a ratio of oxygen atoms to silicon atoms greater than 20:1.

公开(公告)号：US07080528B2

公开(公告)日：2006-07-25

申请号：US10279366

申请日：2002-10-23

申请人： Hichem M'Saad ,  Anchuan Wang ,  Sang Ahn

发明人： Hichem M'Saad ,  Anchuan Wang ,  Sang Ahn

IPC分类号： C03B37/018

CPC分类号： G02B6/132 ,  C23C16/401 ,  C23C16/505 ,  G02B2006/12169 ,  G02B2006/12176

摘要： Embodiments of the present invention provide a highly uniform low cost production worthy solution for manufacturing low propagation loss optical waveguides on a substrate. In one embodiment, the present invention provides a method of forming a PSG optical waveguide on an undercladding layer of a substrate that includes forming at least one silicate glass optical core on said undercladding layer using a plasma enhanced chemical vapor deposition process including a silicon source gas, an oxygen source gas, and a phosphorus source gas, wherein the oxygen source gas and silicon source gas have a ratio of oxygen atoms to silicon atoms greater than 20:1.

摘要翻译： 本发明的实施例提供了用于在衬底上制造低传播损耗光波导的高度均匀的低成本生产有价值的解决方案。 在一个实施例中，本发明提供了一种在衬底的下包层上形成PSG光波导的方法，该方法包括使用包括硅源气体的等离子体增强化学气相沉积工艺在所述下封层上形成至少一个硅酸盐玻璃光学芯 氧源气体和磷源气体，其中氧源气体和硅源气体的氧原子与硅原子的比例大于20:1。

公开(公告)号：US07383702B2

公开(公告)日：2008-06-10

申请号：US11422278

申请日：2006-06-05

申请人： Hichem M'Saad ,  Anchuan Wang ,  Sang Ahn

发明人： Hichem M'Saad ,  Anchuan Wang ,  Sang Ahn

IPC分类号： G02B6/10 ,  C03B37/018

CPC分类号： G02B6/132 ,  C23C16/401 ,  C23C16/505 ,  G02B2006/12169 ,  G02B2006/12176

摘要： Embodiments of the present invention provide a highly uniform low cost production worthy solution for manufacturing low propagation loss optical waveguides on a substrate. In one embodiment, the present invention provides a method of forming a PSG optical waveguide on an undercladding layer of a substrate that includes forming at least one silicate glass optical core on said undercladding layer using a plasma enhanced chemical vapor deposition process including a silicon source gas, an oxygen source gas, and a phosphorus source gas, wherein the oxygen source gas and silicon source gas have a ratio of oxygen atoms to silicon atoms greater than 20:1.

摘要翻译： 本发明的实施例提供了用于在衬底上制造低传播损耗光波导的高度均匀的低成本生产有价值的解决方案。 在一个实施例中，本发明提供了一种在衬底的下包层上形成PSG光波导的方法，该方法包括使用包括硅源气体的等离子体增强化学气相沉积工艺在所述下封层上形成至少一个硅酸盐玻璃光学芯 氧源气体和磷源气体，其中氧源气体和硅源气体的氧原子与硅原子的比例大于20:1。

公开(公告)号：US07325419B2

公开(公告)日：2008-02-05

申请号：US11422299

申请日：2006-06-05

申请人： Hichem M'Saad ,  Anchuan Wang ,  Sang Ahn

发明人： Hichem M'Saad ,  Anchuan Wang ,  Sang Ahn

IPC分类号： C03B37/022 ,  G02B6/10

CPC分类号： G02B6/132 ,  C23C16/401 ,  C23C16/505 ,  G02B2006/12169 ,  G02B2006/12176

摘要： Embodiments of the present invention provide a highly uniform low cost production worthy solution for manufacturing low propagation loss optical waveguides on a substrate. In one embodiment, the present invention provides a method of forming a PSG optical waveguide on an undercladding layer of a substrate that includes forming at least one silicate glass optical core on said undercladding layer using a plasma enhanced chemical vapor deposition process including a silicon source gas, an oxygen source gas, and a phosphorus source gas, wherein the oxygen source gas and silicon source gas have a ratio of oxygen atoms to silicon atoms greater than 20:1.

公开(公告)号：US20060266081A1

公开(公告)日：2006-11-30

申请号：US11422299

申请日：2006-06-05

申请人： Hichem M'Saad ,  Anchuan Wang ,  Sang Ahn

发明人： Hichem M'Saad ,  Anchuan Wang ,  Sang Ahn

IPC分类号： C03B37/022 ,  C03B37/018 ,  C03C25/00

CPC分类号： G02B6/132 ,  C23C16/401 ,  C23C16/505 ,  G02B2006/12169 ,  G02B2006/12176

摘要： Embodiments of the present invention provide a highly uniform low cost production worthy solution for manufacturing low propagation loss optical waveguides on a substrate. In one embodiment, the present invention provides a method of forming a PSG optical waveguide on an undercladding layer of a substrate that includes forming at least one silicate glass optical core on said undercladding layer using a plasma enhanced chemical vapor deposition process including a silicon source gas, an oxygen source gas, and a phosphorus source gas, wherein the oxygen source gas and silicon source gas have a ratio of oxygen atoms to silicon atoms greater than 20:1.

摘要翻译： 本发明的实施例提供了用于在衬底上制造低传播损耗光波导的高度均匀的低成本生产有价值的解决方案。 在一个实施例中，本发明提供了一种在衬底的下包层上形成PSG光波导的方法，该方法包括使用包括硅源气体的等离子体增强化学气相沉积工艺在所述下封层上形成至少一个硅酸盐玻璃光学芯 氧源气体和磷源气体，其中氧源气体和硅源气体的氧原子与硅原子的比例大于20:1。