公开(公告)号：US06667248B2

公开(公告)日：2003-12-23

申请号：US09949414

申请日：2001-09-05

申请人： Hichem M'Saad ,  Chad Peterson ,  Zhuang Li ,  Anchuan Wang ,  Farhad Moghadam

发明人： Hichem M'Saad ,  Chad Peterson ,  Zhuang Li ,  Anchuan Wang ,  Farhad Moghadam

IPC分类号： H01L2131

CPC分类号： H01L21/02131 ,  C23C16/401 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31629

摘要： A method is provided for forming a fluorinated silicate glass layer with HDP-CVD having a lower dielectric constant without compromising the mechanical properties of hardness and compressive stress. A gaseous mixture comprising a silicon-containing gas, an oxygen-containing gas, and a fluorine-containing gas is provided to a process chamber. The ratio of the flow rate of the fluorine-containing gas to the flow rate of the silicon-containing gas is greater than 0.65. A high-density plasma is generated from the gaseous mixture by applying a source RF power having a power density less than 12 W/cm2. A bias is applied to a substrate in the process chamber at a bias power density greater than 0.8 W/cm2 and less than 2.4 W/cm2. The fluorinated silicate glass layer is deposited onto the substrate using the high-density plasma.

摘要翻译： 提供了一种用于在不影响硬度和压缩应力的机械性能的情况下形成具有较低介电常数的HDP-CVD的氟化硅酸盐玻璃层的方法。 将包含含硅气体，含氧气体和含氟气体的气体混合物提供到处理室。 含氟气体的流量与含硅气体的流量比大于0.65。 通过施加功率密度小于12W / cm 2的源RF功率，从气体混合物产生高密度等离子体。 以大于0.8W / cm 2且小于2.4W / cm 2的偏置功率密度对处理室中的衬底施加偏压。 使用高密度等离子体将氟化硅酸盐玻璃层沉积在基板上。

公开(公告)号：US20060286764A1

公开(公告)日：2006-12-21

申请号：US11422150

申请日：2006-06-05

申请人： Lin Zhang ,  Xiaolin Chen ,  DongQing Li ,  Thanh Pham ,  Farhad Moghadam ,  Zhuang Li ,  Padmanabhan Krishnaraj

发明人： Lin Zhang ,  Xiaolin Chen ,  DongQing Li ,  Thanh Pham ,  Farhad Moghadam ,  Zhuang Li ,  Padmanabhan Krishnaraj

IPC分类号： H01L21/76

CPC分类号： H01L21/02274 ,  H01L21/02164 ,  H01L21/02304 ,  H01L21/31116 ,  H01L21/31612

摘要： A deposition/etching/deposition process is provided for filling a gap in a surface of a substrate. A liner is formed over the substrate so that distinctive reaction products are formed when it is exposed to a chemical etchant. The detection of such reaction products thus indicates that the portion of the film deposited during the first etching has been removed to an extent that further exposure to the etchant may remove the liner and expose underlying structures. Accordingly, the etching is stopped upon detection of distinctive reaction products and the next deposition in the deposition/etching/deposition process is begun.

公开(公告)号：US20060228886A1

公开(公告)日：2006-10-12

申请号：US11422159

申请日：2006-06-05

申请人： Lin Zhang ,  Xiaolin Chen ,  DongQing Li ,  Thanh Pham ,  Farhad Moghadam ,  Zhuang Li ,  Padmanabhan Krishnaraj

发明人： Lin Zhang ,  Xiaolin Chen ,  DongQing Li ,  Thanh Pham ,  Farhad Moghadam ,  Zhuang Li ,  Padmanabhan Krishnaraj

IPC分类号： H01L21/44 ,  H01L21/4763

CPC分类号： H01L21/02274 ,  H01L21/02164 ,  H01L21/02304 ,  H01L21/31116 ,  H01L21/31612

摘要： A deposition/etching/deposition process is provided for filling a gap in a surface of a substrate. A liner is formed over the substrate so that distinctive reaction products are formed when it is exposed to a chemical etchant. The detection of such reaction products thus indicates that the portion of the film deposited during the first etching has been removed to an extent that further exposure to the etchant may remove the liner and expose underlying structures. Accordingly, the etching is stopped upon detection of distinctive reaction products and the next deposition in the deposition/etching/deposition process is begun.

摘要翻译： 提供沉积/蚀刻/沉积工艺以填充衬底的表面中的间隙。 在衬底上形成衬垫，使得当暴露于化学蚀刻剂时形成不同的反应产物。 因此，这种反应产物的检测表明，在第一次蚀刻期间沉积的薄膜部分已被去除到进一步暴露于蚀刻剂可以去除衬垫并露出下面的结构的程度。 因此，在检测到不同的反应产物后停止蚀刻，并且开始沉积/蚀刻/沉积工艺中的下一次沉积。

公开(公告)号：US07205240B2

公开(公告)日：2007-04-17

申请号：US10456611

申请日：2003-06-04

申请人： M. Ziaul Karim ,  Bikram Kapoor ,  Anchuan Wang ,  Dong Qing Li ,  Katsunari Ozeki ,  Manoj Vellaikal ,  Zhuang Li

发明人： M. Ziaul Karim ,  Bikram Kapoor ,  Anchuan Wang ,  Dong Qing Li ,  Katsunari Ozeki ,  Manoj Vellaikal ,  Zhuang Li

IPC分类号： C23C16/00

CPC分类号： H01L21/31612 ,  C23C16/045 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31116 ,  H01L21/76837

摘要： A gapfill process is provided using cycling of HDP-CVD deposition, etching, and deposition step. The fluent gas during the first deposition step includes an inert gas such as He, but includes H2 during the remainder deposition step. The higher average molecular weight of the fluent gas during the first deposition step provides some cusping over structures that define the gap to protect them during the etching step. The lower average molecular weight of the fluent gas during the remainder deposition step has reduced sputtering characteristics and is effective at filling the remainder of the gap.

摘要翻译： 使用HDP-CVD沉积，蚀刻和沉积步骤的循环来提供间隙填充方法。 第一沉积步骤期间的流动气体包括诸如He的惰性气体，但在剩余沉积步骤期间包括H 2 O 3。 在第一沉积步骤期间流动气体的较高的平均分子量提供了一些限定在蚀刻步骤期间保护它们的间隙的结构。 在剩余沉积步骤期间流动气体的较低平均分子量具有降低的溅射特性，并且在填充间隙的剩余部分时是有效的。

公开(公告)号：US20080102553A1

公开(公告)日：2008-05-01

申请号：US11555160

申请日：2006-10-31

申请人： TAEHO SHIN ,  Ajey M. Joshi ,  Zhuang Li ,  Wei-Te Wu ,  Jin Chul Son ,  Jong Hun Choi

发明人： TAEHO SHIN ,  Ajey M. Joshi ,  Zhuang Li ,  Wei-Te Wu ,  Jin Chul Son ,  Jong Hun Choi

IPC分类号： H01L21/00

CPC分类号： H01L21/67069 ,  H01L21/0332 ,  H01L21/31122 ,  H01L21/31144

摘要： A process for passivating a carbon-based hard mask, for example, of hydrogenated amorphous carbon, overlying an oxide dielectric which is to be later etched according to the pattern of the hard mask. After the hard mask is photo lithographically etched, it is exposed to a plasma of a hydrogen-containing reducing gas, preferably hydrogen gas, and a fluorocarbon gas, preferably trifluoromethane. The substrate can then be exposed to air without the moisture condensing in the etched apertures of the hard mask.

摘要翻译： 钝化覆盖氧化物电介质的碳氢化硬掩模（例如氢化无定形碳）的方法，该氧化物电介质将根据硬掩模的图案而被蚀刻。 在硬掩模被光刻蚀刻之后，将其暴露于含氢还原气体，优选氢气和碳氟化合物气体，优选三氟甲烷的等离子体。 然后可以将衬底暴露于空气，而不会在硬掩模的蚀刻孔中凝结水分。

公开(公告)号：US06812153B2

公开(公告)日：2004-11-02

申请号：US10137132

申请日：2002-04-30

申请人： Zhong Qiang Hua ,  Dong Qing Li ,  Zhengquan Tan ,  Zhuang Li ,  Michael Chiu Kwan ,  Bruno Geoffrion ,  Padmanabhan Krishnaraj

发明人： Zhong Qiang Hua ,  Dong Qing Li ,  Zhengquan Tan ,  Zhuang Li ,  Michael Chiu Kwan ,  Bruno Geoffrion ,  Padmanabhan Krishnaraj

IPC分类号： H01L21302

CPC分类号： H01L21/02164 ,  C23C16/045 ,  C23C16/401 ,  C23C16/402 ,  C23C16/507 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76229

摘要： A method of depositing a high density plasma silicon oxide layer having improved gapfill capabilities. In one embodiment the method includes flowing a process gas consisting of a silicon-containing source, an oxygen-containing source and helium into a substrate processing chamber and forming a plasma from the process gas. The ratio of the flow rate of the helium with respect to the combined flow rate of the silicon source and oxygen source is between 0.5:1 and 3.0:1 inclusive. In one particular embodiment, the process gas consists of monosilane (SiH4), molecular oxygen (O2) and helium.

摘要翻译： 一种沉积具有改进的间隙填充能力的高密度等离子体氧化硅层的方法。 在一个实施例中，该方法包括将由含硅源，含氧源和氦组成的工艺气体流入衬底处理室并从工艺气体形成等离子体。 氦流量相对于硅源和氧源的组合流量的比率在0.5:1和3.0:1之间。 在一个具体实施方案中，工艺气体由单硅烷（SiH 4），分子氧（O 2）和氦组成。

公开(公告)号：US20120094499A1

公开(公告)日：2012-04-19

申请号：US13087227

申请日：2011-04-14

申请人： Siu Tang Ng ,  Guowen Ding ,  Teh-Tien Su ,  Zhuang Li ,  Benjamin Schwarz ,  Benjamin Lee

发明人： Siu Tang Ng ,  Guowen Ding ,  Teh-Tien Su ,  Zhuang Li ,  Benjamin Schwarz ,  Benjamin Lee

IPC分类号： H01L21/3065

CPC分类号： B08B7/0035 ,  H01J37/32862

摘要： Methods of performing in situ chamber cleaning for etch chambers are described.

摘要翻译： 描述了对蚀刻室进行原位室清洁的方法。

公开(公告)号：US07064077B2

公开(公告)日：2006-06-20

申请号：US10956469

申请日：2004-10-01

申请人： Zhong Qiang Hua ,  Dong Qing Li ,  Zhengquan Tan ,  Zhuang Li ,  Michael Chiu Kwan ,  Bruno Geoffrion ,  Padmanabhan Krishnaraj

发明人： Zhong Qiang Hua ,  Dong Qing Li ,  Zhengquan Tan ,  Zhuang Li ,  Michael Chiu Kwan ,  Bruno Geoffrion ,  Padmanabhan Krishnaraj

IPC分类号： H01L21/302

CPC分类号： H01L21/02164 ,  C23C16/045 ,  C23C16/401 ,  C23C16/402 ,  C23C16/507 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76229

摘要： A method of depositing a high density plasma silicon oxide layer having improved gapfill capabilities. In one embodiment the method includes flowing a process gas consisting of a silicon-containing source, an oxygen-containing source and helium into a substrate processing chamber and forming a plasma from the process gas. The ratio of the flow rate of the helium with respect to the combined flow rate of the silicon source and oxygen source is between 0.5:1 and 3.0:1 inclusive. In one particular embodiment, the process gas consists of monosilane (SiH4), molecular oxygen (O2) and helium.

摘要翻译： 一种沉积具有改进的间隙填充能力的高密度等离子体氧化硅层的方法。 在一个实施例中，该方法包括将由含硅源，含氧源和氦组成的工艺气体流入衬底处理室并从工艺气体形成等离子体。 氦流量相对于硅源和氧源的组合流量的比率在0.5:1和3.0:1之间。 在一个具体实施方案中，工艺气体由单硅烷（SiH 4 S 4），分子氧（O 2 O 2）和氦组成。

公开(公告)号：US20050079715A1

公开(公告)日：2005-04-14

申请号：US10956469

申请日：2004-10-01

申请人： Zhong Hua ,  Dong Li ,  Zhengquan Tan ,  Zhuang Li ,  Michael Kwan ,  Bruno Geoffrion ,  Padmanabhan Krishnaraj

发明人： Zhong Hua ,  Dong Li ,  Zhengquan Tan ,  Zhuang Li ,  Michael Kwan ,  Bruno Geoffrion ,  Padmanabhan Krishnaraj

IPC分类号： C23C16/04 ,  C23C16/40 ,  C23C16/507 ,  H01L21/316 ,  H01L21/762 ,  H01L21/302 ,  H01L21/31 ,  H01L21/461 ,  H01L21/469

CPC分类号： H01L21/02164 ,  C23C16/045 ,  C23C16/401 ,  C23C16/402 ,  C23C16/507 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76229

摘要： A method of depositing a high density plasma silicon oxide layer having improved gapfill capabilities. In one embodiment the method includes flowing a process gas consisting of a silicon-containing source, an oxygen-containing source and helium into a substrate processing chamber and forming a plasma from the process gas. The ratio of the flow rate of the helium with respect to the combined flow rate of the silicon source and oxygen source is between 0.5:1 and 3.0:1 inclusive. In one particular embodiment, the process gas consists of monosilane (SiH4), molecular oxygen (O2) and helium.

摘要翻译： 一种沉积具有改进的间隙填充能力的高密度等离子体氧化硅层的方法。 在一个实施例中，该方法包括将由含硅源，含氧源和氦组成的工艺气体流入衬底处理室并从工艺气体形成等离子体。 氦流量相对于硅源和氧源的组合流量的比率在0.5:1和3.0:1之间。 在一个具体实施方案中，工艺气体由单硅烷（SiH 4），分子氧（O 2）和氦组成。

公开(公告)号：US08845816B2

公开(公告)日：2014-09-30

申请号：US13408709

申请日：2012-02-29

申请人： Adauto Diaz ,  Andrew Nguyen ,  Benjamin Schwarz ,  Eu Jin Lim ,  Jared Ahmad Lee ,  James P. Cruse ,  Li Zhang ,  Scott M. Williams ,  Xiaoliang Zhuang ,  Zhuang Li

发明人： Adauto Diaz ,  Andrew Nguyen ,  Benjamin Schwarz ,  Eu Jin Lim ,  Jared Ahmad Lee ,  James P. Cruse ,  Li Zhang ,  Scott M. Williams ,  Xiaoliang Zhuang ,  Zhuang Li

IPC分类号： B08B5/00 ,  C23C16/44

CPC分类号： B08B5/00 ,  C23C16/44 ,  C23C16/4408 ,  H01J37/32449 ,  H01J37/32724 ,  H01J37/32862 ,  Y10T137/0419

摘要： Methods for reducing the contamination of a gas distribution plate are provided. In one embodiment, a method for processing a substrate includes transferring the substrate into a chamber, performing a treating process on the substrate, and providing a purge gas into the chamber before or after the treating process to pump out a residue gas relative to the treating process from the chamber. The treating process includes distributing a reactant gas into the chamber through a gas distribution plate.

摘要翻译： 提供减少气体分布板污染的方法。 在一个实施例中，一种用于处理衬底的方法包括将衬底转移到腔室中，在衬底上执行处理过程，并且在处理过程之前或之后向室中提供净化气体，以相对于处理 过程从房间。 处理过程包括通过气体分配板将反应气体分配到室中。