公开(公告)号：US20110017590A1

公开(公告)日：2011-01-27

申请号：US12922485

申请日：2008-12-09

申请人： Hideaki Fukuyo ,  Masataka Yahagi ,  Yasuhiro Yamakoshi ,  Hideyuki Takahashi

发明人： Hideaki Fukuyo ,  Masataka Yahagi ,  Yasuhiro Yamakoshi ,  Hideyuki Takahashi

IPC分类号： C23C14/34 ,  B22F3/11

CPC分类号： B22F3/1103 ,  B22F3/14 ,  B22F3/15 ,  B22F2998/10 ,  C22C1/04 ,  C22C12/00 ,  C22C28/00 ,  C22C30/00 ,  C23C14/0623 ,  C23C14/3414 ,  G11B7/2433 ,  G11B2007/24308 ,  G11B2007/2431 ,  G11B2007/24312 ,  G11B2007/24314 ,  G11B2007/24316 ,  G11B2007/24322

摘要： Disclosed is a sintered compact target containing an element (A) and an element (B) below, wherein the sintered compact target is free from pores having an average diameter of 1 μm or more, and the number of micropores having an average diameter of less than 1 μm existing in 40000 μm2 of the target surface is 100 micropores or less:(A): one or more chalcogenide elements selected from S, Se, and Te; and (B): one or more Vb group elements selected from Bi, Sb, As, P, and N.The provided technology is able to eliminate the source of grain dropping or generation of nodules in the target during sputtering, and additionally inhibit the generation of particles.

摘要翻译： 公开了含有下述元素（A）和元素（B）的烧结体靶，其中，烧结体靶没有平均直径为1μm以上的孔，平均直径少的微孔数 目标表面40000μm2中存在的1μm以下为1μm以下：（A）：选自S，Se，Te中的一种以上的硫族化物元素; 和（B）：选自Bi，Sb，As，P和N中的一种或多种Vb族元素。所提供的技术能够在溅射期间消除靶中的颗粒滴下或产生结节的来源，并且另外抑制 生成颗粒。

公开(公告)号：US08430978B2

公开(公告)日：2013-04-30

申请号：US10566116

申请日：2004-07-14

申请人： Akihisa Inoue ,  Hisamichi Kimura ,  Kenichiro Sasamori ,  Masataka Yahagi ,  Atsushi Nakamura ,  Hideyuki Takahashi

发明人： Akihisa Inoue ,  Hisamichi Kimura ,  Kenichiro Sasamori ,  Masataka Yahagi ,  Atsushi Nakamura ,  Hideyuki Takahashi

IPC分类号： C22C45/00

CPC分类号： C23C14/3414 ,  C22C5/00 ,  C22C9/00 ,  C22C16/00 ,  C22C19/07 ,  C22C21/10 ,  C22C45/02 ,  C22C45/10 ,  C22F1/053

摘要： A sintered sputtering target having a structure where the average crystallize size is 1 nm to 50 nm and preferably comprises an alloy having a three-component system or greater containing, as its primary component, at least one element selected from among Zr, Pd, Cu, Co, Fe, Ti, Mg, Sr, Y, Nb, Mo, Tc, Ru, Rh, Ag, Cd, In, Sn, Sb, Te and a rare earth metal. This target is manufactured by sintering atomized powder. Thereby provided is a high density target having an extremely fine and uniform structure manufactured with the sintering method, in place of a conventional bulk metal glass produced by the quenching of a molten metal, which has a coarse crystal structure and requires a high cost for its production.

摘要翻译： 具有平均结晶尺寸为1nm〜50nm的结构的烧结溅射靶，优选包含含有选自Zr，Pd，Cu中的至少一种元素作为其主要成分的具有三成分以上的三成分体系以上的合金 ，Co，Fe，Ti，Mg，Sr，Y，Nb，Mo，Tc，Ru，Rh，Ag，Cd，In，Sn，Sb，Te和稀土金属。 该目标通过烧结雾化粉末制造。 由此提供了通过烧结方法制造的具有非常细小而均匀结构的高密度靶材，代替了通过熔融金属淬火制备的常规体积金属玻璃，该熔融金属具有粗晶体结构并且需要高成本 生产。

公开(公告)号：US20090301872A1

公开(公告)日：2009-12-10

申请号：US12444859

申请日：2007-10-05

申请人： Masataka Yahagi ,  Hideyuki Takahashi ,  Hirohisa Ajima

发明人： Masataka Yahagi ,  Hideyuki Takahashi ,  Hirohisa Ajima

IPC分类号： C23C14/14 ,  C22C28/00 ,  G11B7/26

CPC分类号： C23C14/3414 ,  B22F2998/10 ,  C22C1/05 ,  C22C12/00 ,  C22C28/00 ,  C23C14/0623 ,  G11B7/266 ,  B22F9/082 ,  B22F3/14

摘要： Provided is an Sb—Te base alloy sinter sputtering target having Sb and Te as its primary component and comprising a structure in which Sb—Te base alloy particles are surrounded by fine carbon or boron particles; wherein, if the mean diameter of the Sb—Te base alloy particles is X and the particle size of carbon or boron is Y, Y/X is within the range of 1/10 to 1/10000. The present invention seeks to improve the Sb—Te base alloy sputtering target structure, inhibit the generation of cracks in the sintered target, and prevent the generation of arcing during the sputtering process.

摘要翻译： 提供具有Sb和Te作为其主要成分的Sb-Te基合金烧结溅射靶，并且包括其中Sb-Te基合金颗粒被细碳或硼颗粒包围的结构; 其中，如果Sb-Te基合金粒子的平均直径为X，碳或硼的粒径为Y，则Y / X为1/10〜1/10000的范围。 本发明寻求改进Sb-Te基合金溅射靶结构，抑制烧结靶产生裂纹，并防止在溅射过程中产生电弧。

公开(公告)号：US08882975B2

公开(公告)日：2014-11-11

申请号：US12444859

申请日：2007-10-05

申请人： Masataka Yahagi ,  Hideyuki Takahashi ,  Hirohisa Ajima

发明人： Masataka Yahagi ,  Hideyuki Takahashi ,  Hirohisa Ajima

IPC分类号： C23C14/00 ,  C25B9/00 ,  C25B11/00 ,  C25B13/00 ,  B22F1/00 ,  B22F3/00 ,  C22C1/00 ,  C22C1/04 ,  C22C12/00 ,  C22C28/00 ,  C22C1/05 ,  C23C14/34 ,  C23C14/06 ,  G11B7/26

CPC分类号： C23C14/3414 ,  B22F2998/10 ,  C22C1/05 ,  C22C12/00 ,  C22C28/00 ,  C23C14/0623 ,  G11B7/266 ,  B22F9/082 ,  B22F3/14

摘要： Provided is an Sb—Te base alloy sinter sputtering target having Sb and Te as its primary component and comprising a structure in which Sb—Te base alloy particles are surrounded by fine carbon or boron particles; wherein, if the mean diameter of the Sb—Te base alloy particles is X and the particle size of carbon or boron is Y, Y/X is within the range of 1/10 to 1/10000. The present invention seeks to improve the Sb—Te base alloy sputtering target structure, inhibit the generation of cracks in the sintered target, and prevent the generation of arcing during the sputtering process.

摘要翻译： 提供具有Sb和Te作为其主要成分的Sb-Te基合金烧结溅射靶，并且包括其中Sb-Te基合金颗粒被细碳或硼颗粒包围的结构; 其中，如果Sb-Te基合金粒子的平均直径为X，碳或硼的粒径为Y，则Y / X为1/10〜1/10000的范围。 本发明寻求改进Sb-Te基合金溅射靶结构，抑制烧结靶产生裂纹，并防止在溅射过程中产生电弧。

公开(公告)号：US06755948B1

公开(公告)日：2004-06-29

申请号：US10089626

申请日：2002-04-01

申请人： Hideaki Fukuyo ,  Yuichiro Shindo ,  Hideyuki Takahashi

发明人： Hideaki Fukuyo ,  Yuichiro Shindo ,  Hideyuki Takahashi

IPC分类号： C23C1400

CPC分类号： C23C14/3414 ,  C22C14/00

摘要： A titanium sputtering target that contains a concentration of oxygen in an amount of 20 ppm or less and has a maximum grain diameter of 20 &mgr;m or less. The target permits a sputtering operation to be accomplished substantially free from the formation of particles or the occurrence of an abnormal discharge phenomenon. In addition, the target contains a reduced amount of contaminants and is soft.

摘要翻译： 含有20ppm以下的氧浓度，最大粒径为20μm以下的钛溅射靶。 目标允许基本上不形成颗粒或发生异常放电现象的溅射操作。 此外，目标含有减少量的污染物并且柔软。

公开(公告)号：US20060185771A1

公开(公告)日：2006-08-24

申请号：US10566116

申请日：2004-07-14

申请人： Akihisa Inoue ,  Hisamichi Kimura ,  Kenichiro Sasamori ,  Masataka Yahagi ,  Atsushi Nakamura ,  Hideyuki Takahashi

发明人： Akihisa Inoue ,  Hisamichi Kimura ,  Kenichiro Sasamori ,  Masataka Yahagi ,  Atsushi Nakamura ,  Hideyuki Takahashi

IPC分类号： C22C45/00

CPC分类号： C23C14/3414 ,  C22C5/00 ,  C22C9/00 ,  C22C16/00 ,  C22C19/07 ,  C22C21/10 ,  C22C45/02 ,  C22C45/10 ,  C22F1/053

摘要： A sintered sputtering target having a structure where the average crystallize size is 1 nm to 50 nm and preferably comprises an alloy having a three-component system or greater containing, as its primary component, at least one element selected from among Zr, Pd, Cu, Co, Fe, Ti, Mg, Sr, Y, Nb, Mo, Tc, Ru, Rh, Ag, Cd, In, Sn, Sb, Te and a rare earth metal. This target is manufactured by sintering atomized powder. Thereby provided is a high density target having an extremely fine and uniform structure manufactured with the sintering method, in place of a conventional bulk metal glass produced by the quenching of a molten metal, which has a coarse crystal structure and requires a high cost for its production.

公开(公告)号：US09277934B2

公开(公告)日：2016-03-08

申请号：US13212138

申请日：2011-08-17

申请人： Hideki Kojima ,  Hideyuki Takahashi

发明人： Hideki Kojima ,  Hideyuki Takahashi

IPC分类号： A61B17/3203 ,  A61B17/00 ,  A61M1/00

CPC分类号： A61B17/3203 ,  A61B2017/00402 ,  A61M1/0066

摘要： Liquid to be injected from an injection nozzle is supplied through a liquid supply channel toward the injection nozzle. Negative pressure for sucking the liquid injected from the injection nozzle through a suction port is produced by a suction unit and guided through a suction channel toward the suction port. A bypass channel which bypasses the liquid supply channel on the upstream side with respect to the injection nozzle and connects with the suction channel is provided. The bypass channel is opened and closed by an opening and closing unit. According to this structure, flow of unnecessary liquid from the injection nozzle can be reduced by opening the opening and closing unit while injection of liquid is stopping.

摘要翻译： 从注射喷嘴喷射的液体通过液体供给通道被供给到喷嘴。 通过抽吸单元产生从喷嘴喷射的液体通过吸入口抽吸的负压，并通过抽吸通道朝向吸入口引导。 提供旁路通道，其相对于注射喷嘴上游侧的液体供给通道并与抽吸通道连接。 旁通通道由打开和关闭单元打开和关闭。 根据该结构，通过在注射液体停止的同时打开开闭单元，可以减少来自喷嘴的不需要的液体的流动。

公开(公告)号：US20150036693A1

公开(公告)日：2015-02-05

申请号：US14379655

申请日：2012-05-30

申请人： Hideyuki Takahashi

发明人： Hideyuki Takahashi

IPC分类号： H04L12/403

CPC分类号： H04L12/403 ,  B61C17/12 ,  H04L61/2038 ,  H04L67/12 ,  H04L2012/40293

摘要： According to an embodiment, a transmission apparatus is installed in a locomotive having ID information. A first connecting direction and a second connecting direction opposite the first connecting direction are defined for the locomotive. The transmission apparatus includes a transmission unit and a connection state determination unit. The transmission unit transmits the ID information received from other locomotive from one of the first connecting direction and the second connecting direction to other one of the first connecting direction and the second connecting direction. The connection state determination unit determines a connection state between the other locomotive and the locomotive in which the transmission apparatus is installed, based on the received ID information.

摘要翻译： 根据实施例，在具有ID信息的机车中安装发送装置。 为机车定义第一连接方向和与第一连接方向相反的第二连接方向。 传输装置包括传输单元和连接状态确定单元。 传输单元将从其他机车接收的ID信息从第一连接方向和第二连接方向中的一个发送到第一连接方向和第二连接方向中的另一个。 连接状态确定单元基于接收到的ID信息来确定安装了发送装置的其他机车与机车之间的连接状态。

公开(公告)号：US08581566B2

公开(公告)日：2013-11-12

申请号：US13609093

申请日：2012-09-10

申请人： Hideyuki Takahashi ,  Yoshimi Matsumoto

发明人： Hideyuki Takahashi ,  Yoshimi Matsumoto

IPC分类号： G05F1/40

CPC分类号： H02M3/157 ,  H02M1/36 ,  H02M2001/0012 ,  H03M1/182

摘要： A power supply control method of performing a feedback control of an output voltage based on a deviation signal for a standard voltage value serving as a target value for the output voltage and a digital signal generated by analog/digital (A/D) conversion of the output voltage, the method includes selecting a range of the reference voltage for the A/D conversion based on the digital signal in a power supply startup period, and selecting a range of the reference voltage for the A/D conversion based on the deviation signal or a signal corresponding to the deviation signal in a steady state period.

摘要翻译： 一种电源控制方法，用于基于用于输出电压的目标值的标准电压值的偏差信号和通过模拟/数字（A / D）转换产生的数字信号来执行输出电压的反馈控制 输出电压，该方法包括在电源启动期间基于数字信号选择用于A / D转换的参考电压的范围，并且基于偏差信号选择用于A / D转换的参考电压的范围 或在稳态期间对应于偏差信号的信号。

公开(公告)号：US08519690B2

公开(公告)日：2013-08-27

申请号：US13608025

申请日：2012-09-10

申请人： Hideyuki Takahashi

发明人： Hideyuki Takahashi

IPC分类号： G05F1/575 ,  H02M3/335

CPC分类号： H02M3/157

摘要： A control device includes a first terminal receiving a monitored output voltage and a second terminal transmitting a pulse width modulation (PWM) signal. A converting unit generates an A/D conversion synchronous signal, and an A/D converter samples the monitored output voltage in accordance with the A/D conversion synchronous signal. A pulse oscillator controls a position of a first edge on the PWM signal in accordance with the A/D conversion synchronous signal, and controls a position of a second edge based on the monitored voltage.

摘要翻译： 控制装置包括接收被监视的输出电压的第一端子和发送脉宽调制（PWM）信号的第二端子。 A转换单元产生A / D转换同步信号，并且A / D转换器根据A / D转换同步信号对监视的输出电压进行采样。 脉冲振荡器根据A / D转换同步信号控制PWM信号上的第一边沿的位置，并且基于所监视的电压来控制第二边沿的位置。