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公开(公告)号：US4532373A
公开(公告)日：1985-07-30
申请号：US589324
申请日：1984-03-14
申请人： Hideharu Matsuura , Kazunobu Tanaka , Akihisa Matsuda , Hideyo Okushi , Hidetoshi Oheda , Satoshi Yamasaki , Nobuhiro Hata
发明人： Hideharu Matsuura , Kazunobu Tanaka , Akihisa Matsuda , Hideyo Okushi , Hidetoshi Oheda , Satoshi Yamasaki , Nobuhiro Hata
IPC分类号： H01L31/04 , H01L31/0224 , H01L31/06 , H01L31/07
CPC分类号： H01L31/022425 , H01L31/06 , H01L31/07 , Y02E10/50
摘要： An amorphous photovoltaic energy conversion element for use in a solar cell is composed of a first layer formed of a p-type material, a second layer formed of an intrinsic amorphous semiconductor having a potential gradient formed therein and a third layer formed of a metal capable of coming into ohmic contact with the aforementioned intrinsic layer of amorphous semiconductor and exhibiting a lower work function than the work function of the intrinsic layer of amorphous semiconductor.
摘要翻译： 用于太阳能电池的非晶形光伏能量转换元件由由p型材料形成的第一层，由其中形成有电位梯度的本征非晶半导体形成的第二层和由金属形成的第三层组成 与上述非晶半导体本征层进行欧姆接触，并且具有比非晶半导体本征层的功函数更低的功函数。
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公开(公告)号：US4598304A
公开(公告)日：1986-07-01
申请号：US790781
申请日：1985-10-23
IPC分类号： H01L21/205 , H01L21/30 , H01L29/04 , H01L29/167 , H01L49/02 , H01L31/06
CPC分类号： H01L21/02381 , H01L21/02532 , H01L21/02576 , H01L21/0262 , H01L21/3003 , H01L29/04 , H01L29/167
摘要： a-type or n-type thin film of silicon has the concentration of an impurity dopant element decreased adjacent to a boundary of film. The impurity dopant element in the portion of the silicon film from the surface to a predetermined depth is replaced by an element selected from the group consisting of fluorine, chlorine, bromine, iodine, and hydrogen.
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公开(公告)号：US4490208A
公开(公告)日：1984-12-25
申请号：US394074
申请日：1982-07-01
IPC分类号： H01L21/205 , H01L21/30 , H01L29/04 , H01L29/167 , C30B25/02
CPC分类号： H01L21/02381 , H01L21/02532 , H01L21/02576 , H01L21/0262 , H01L21/3003 , H01L29/04 , H01L29/167
摘要： A method of producing thin films of silicon is characterized in that a p-type or n-type thin film of doped silicon having a dopant or impurity element is placed in a plasma atmosphere of elements selected from the group consisting of fluorine, chlorine, bromine, iodine, and hydrogen, whereby the concentration of an impurity element in the thin film is decreased adjacent to the surface of thin film and accordingly the impurity element is replaced by the plasma element adjacent to the surface of the thin film.
摘要翻译： 一种制造硅薄膜的方法的特征在于，将具有掺杂剂或杂质元素的掺杂硅的p型或n型薄膜置于等离子体气氛中，所述元素选自氟，氯，溴 ，碘和氢，由此薄膜中的杂质元素的浓度相邻于薄膜的表面而降低，因此杂质元素被与薄膜表面相邻的等离子体元素代替。
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公开(公告)号：US5017308A
公开(公告)日：1991-05-21
申请号：US377985
申请日：1989-07-11
IPC分类号： C01B33/02 , C23C16/24 , H01L21/205 , H01L29/04 , H01L29/167 , H01L31/04 , H01L31/20
CPC分类号： H01L29/04 , C23C16/24 , H01L21/02422 , H01L21/02532 , H01L21/02579 , H01L21/02592 , H01L21/0262 , H01L29/167 , H01L31/202 , Y02E10/50 , Y02P70/521 , Y10T428/12528
摘要： A silicon thin film is composed of primarily silicon atoms, 0 to 8 atm % hydrogen, at least one element selected from the group including fluorine, chlorine, bromine and iodine, and an impurity element, wherein about 80 to 100% of microcrystalline grains are interspersed in an amorphous phase. The thin film is produced by deposition on a substrate in a plasma atmosphere using as a raw material gas silane (SiH.sub.4) or halogenated silane (SiH.sub.o--3 X.sub.4--1) wherein X represents a halogen or a combination of two or more halogens, and a dopant gas mixed with the raw material gas. The method comprises the steps of: (1) diluting the mixed gas with hydrogen in a ratio of the diluting gas to the raw material gas of from 50:1 to 100:1, to control the film deposition rate to produce a layer including mixed crystalline and amorphous substances; and (2) applying an electric power to provide a plasma discharge power density of from 0.1 to about 0.5 W/cm.sup.2, at a reaction pressure of 5 to 10 torr.
摘要翻译： 硅薄膜主要由0〜8atm％的氢原子，至少一种选自氟，氯，溴和碘的元素和杂质元素组成，其中约80〜100％的微晶粒为 散布在非晶相中。 通过使用其中X表示卤素或两种或更多种卤素的组合的原料气体硅烷（SiH 4）或卤代硅烷（SiHo-3X4-1）在等离子体气氛中在基板上沉积而制造薄膜， 掺杂气体与原料气体混合。 该方法包括以下步骤：（1）将稀释气体与原料气体的比例用氢气稀释为50:1至100:1，以控制膜沉积速率以产生包括混合物 结晶和无定形物质; 和（2）施加电力以提供0.1至约0.5W / cm 2的等离子体放电功率密度，反应压力为5至10托。
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公开(公告)号：US06287699B1
公开(公告)日：2001-09-11
申请号：US09263223
申请日：1999-03-05
IPC分类号： H01L2132
CPC分类号： H01L21/02381 , H01L21/02532 , H01L21/02639 , H01L31/18 , Y10T428/24926
摘要： A mask for a selective growth of a solid, is provided in which the solid is selectively grown in a predetermined region of a substrate and growth on other regions is suppressed. A method is also provided for selectively growing a solid on only the predetermined region of a substrate using the mask. In the mask, a surface layer and an underlayer are provided, each having different chemical compositions. Thus, even if the mask is formed on a substrate in an ultra thin film, the generation of mask defects can be suppressed and stability provided to heat and electron beams.
摘要翻译： 提供了用于选择性生长固体的掩模，其中固体选择性地生长在基板的预定区域中，并抑制其它区域上的生长。 还提供了一种方法，用于使用掩模仅在基板的预定区域上选择性地生长固体。 在掩模中，提供表面层和底层，每层具有不同的化学组成。 因此，即使在超薄膜中的基板上形成掩模，也可以抑制掩模缺陷的产生，并且对热和电子束提供稳定性。
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公开(公告)号：US06596186B2
公开(公告)日：2003-07-22
申请号：US09917711
申请日：2001-07-31
IPC分类号： B44C122
CPC分类号： H01L21/02381 , H01L21/02532 , H01L21/02639 , H01L31/18 , Y10T428/24926
摘要： A mask for a selective growth of a solid, is provided in which the solid is selectively grown in a predetermined region of a substrate and growth on other regions is suppressed. A method is also provided for selectively growing a solid on only the predetermined region of a substrate using the mask. In the mask, a surface layer and an underlayer are provided, each having different chemical compositions. Thus, even if the mask is formed on a substrate in an ultra thin film, the generation of mask defects can be suppressed and stability provided to heat and electron beams.
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公开(公告)号：US4584345A
公开(公告)日：1986-04-22
申请号：US614915
申请日：1984-05-29
申请人： Kazunobu Tanaka , Zenichi Maruo
发明人： Kazunobu Tanaka , Zenichi Maruo
摘要： Heat-resistant, high-impact thermoplastic resin compositions comprising a graft copolymer (A) obtained by graft-copolymerizing an aromatic vinyl compound and an unsaturated carboxylic acid anhydride onto a rubbery polymer; a composite modifier (B) obtained by graft-copolymerizing an aromatic vinyl compound and a methacrylate ester monomer onto a diene rubber polymer; and an aromatic polycarbonate resin (C).
摘要翻译： 包含通过将芳族乙烯基化合物和不饱和羧酸酐接枝共聚到橡胶状聚合物上而获得的接枝共聚物（A）的耐热，高冲击性热塑性树脂组合物; 通过将芳香族乙烯基化合物和甲基丙烯酸酯单体接枝共聚到二烯橡胶聚合物上而得到的复合改性剂（B） 和芳香族聚碳酸酯树脂（C）。
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8.发明授权Resin composition for the formation of light-degradable mulching film for agricultural use 失效用于形成用于农业用途的光降解性覆盖膜的树脂组合物
公开(公告)号：US3991138A
公开(公告)日：1976-11-09
申请号：US561282
申请日：1975-03-24
IPC分类号： C08L23/00 , A01G13/00 , A01G13/02 , C08L1/00 , C08L7/00 , C08L21/00 , C08L23/02 , C08L27/00 , C08L33/00 , C08L33/02 , C08L47/00 , C08L71/00 , C08L71/02 , C08L101/00
CPC分类号： A01G13/0275 , C08L23/02 , C08L23/06 , C08L23/0853 , C08L23/10 , C08L23/16 , C08L23/22 , C08L71/02 , C08L2205/03 , C08L9/00 , Y10S260/43
摘要： A method of promoting the growth of plants which comprises applying to the surface of a plant growth medium to be exposed to a source of ultraviolet radiation a light-degradable mulching film for agricultural use, comprising a resin composition, whose resin components consist essentially of1. from 5 to 50 percent by weight of polyisobutylene oxide resin,2. the balance of a second resin component selected from the group consisting of at least one polyolefin resin and a mixture of at least one polyolefin resin and at least one polydiene resin.The resin composition can be made into a mulching film which, when exposed to the sunlight, photolytically degrades into a pulverized condition within a selected period of time.
摘要翻译： 一种促进植物生长的方法，其包括向植物生长培养基的表面施加暴露于农业用的可光降解的覆盖膜的紫外线辐射源，该树脂组合物的树脂组分基本上由1 从5至50％重量的聚异丁烯氧化物树脂，2.由至少一种聚烯烃树脂组合的组中选择的第二种树脂组分和至少一种聚烯烃树脂和至少一种聚酯树脂的混合物的平衡。
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公开(公告)号：US4678602A
公开(公告)日：1987-07-07
申请号：US609946
申请日：1984-05-14
申请人： Kazunobu Tanaka , Kyozo Mori
发明人： Kazunobu Tanaka , Kyozo Mori
IPC分类号： C08L33/00 , C08K3/08 , C08L33/02 , C08L35/00 , C08L35/06 , C08L51/00 , C08L51/04 , C08L55/00 , H01B1/22 , C07C143/02 , C07C143/16
摘要： A resin composition, which is very highly electroconductive, comprises a vinylaromatic copolymer containing an unsaturated dicarboxylic acid anhydride and a metallic filler. It is also improved in mechanical properties.
摘要翻译： 非常高导电性的树脂组合物包含含有不饱和二羧酸酐和金属填料的乙烯基芳族共聚物。 机械性能也得到改善。
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公开(公告)号：US4644034A
公开(公告)日：1987-02-17
申请号：US687301
申请日：1984-12-28
申请人： Kazunobu Tanaka , Michio Kobayashi
发明人： Kazunobu Tanaka , Michio Kobayashi
IPC分类号： C08L7/00 , C08L21/00 , C08L23/00 , C08L33/00 , C08L33/02 , C08L51/00 , C08L51/02 , C08L51/04 , C08L51/06 , C08L53/02 , C08L71/00 , C08L71/12 , C08L77/00 , C08L101/00 , C08L61/04
CPC分类号： C08L51/04 , C08L53/02 , C08L71/123 , Y10S525/905
摘要： A resin composition is resistant to heat and impact and comprises (a) a polyphenylene ether resin, (b) a rubber graft copolymer resin obtained from a rubbery polymer having a glass transition temperature of 0.degree. C. or lower, an aromatic vinyl monomer and an alpha, beta-unsaturated dicarboxylic anhydride monomer and (c) a block copolymer of an aromatic vinyl monomer and an aliphatic diene monomer. It may contain a mono-olefinic monomer having a nitril or carboxylic ester group as the rubber graft copolymer resin.
摘要翻译： 树脂组合物耐热和抗冲击，包括（a）聚苯醚树脂，（b）由玻璃化转变温度为0℃或更低的橡胶状聚合物获得的橡胶接枝共聚物树脂，芳族乙烯基单体和 α，β-不饱和二羧酸酐单体和（c）芳族乙烯基单体和脂族二烯单体的嵌段共聚物。 它可以含有具有腈或羧酸酯基的单烯烃单体作为橡胶接枝共聚物树脂。
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