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    SUPERCRITICAL DRYING METHOD FOR SEMICONDUCTOR SUBSTRATE
    3.
    发明申请
    SUPERCRITICAL DRYING METHOD FOR SEMICONDUCTOR SUBSTRATE 有权
    用于半导体基板的超临界干燥方法

    公开(公告)号：US20120118332A1

    公开(公告)日：2012-05-17

    申请号：US13052232

    申请日：2011-03-21

    申请人： Yohei SATO ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Hidekazu Hayashi ,  Yukiko Kitajima

    发明人： Yohei SATO ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Hidekazu Hayashi ,  Yukiko Kitajima

    IPC分类号： B08B3/10 ,  B08B7/00

    CPC分类号： H01L21/67034

    摘要： In one embodiment, after rinsing a semiconductor substrate having a fine pattern formed thereon with pure water, the pure water staying on the semiconductor substrate is substituted with a water soluble organic solvent, and then, the semiconductor substrate is introduced into a chamber in a state wet with the water soluble organic solvent. Then, the water soluble organic solvent is turned into a supercritical state by increasing a temperature inside of the chamber. Thereafter, the inside of the chamber is reduced in pressure while keeping the inside of the chamber at a temperature enough not to liquefy the pure water (i.e., rinsing pure water mixed into the water soluble organic solvent), and further, the water soluble organic solvent in the supercritical state is changed into a gaseous state, to be discharged from the chamber, so that the semiconductor substrate is dried.

    摘要翻译： 在一个实施方案中，在用纯水冲洗其上形成有精细图案的半导体衬底之后，将残留在半导体衬底上的纯水用水溶性有机溶剂代替，然后将半导体衬底引入到室中 用水溶性有机溶剂润湿。 然后，水溶性有机溶剂通过增加室内的温度而变成超临界状态。 此后，室内压力降低，同时保持室内不足液化纯水的温度（即冲洗混入水溶性有机溶剂中的纯水），此外，水溶性有机溶剂 处于超临界状态的溶剂变成气态，从室排出，使得半导体基板干燥。

    Supercritical drying method for semiconductor substrate
    4.
    发明授权
    Supercritical drying method for semiconductor substrate 有权
    半导体衬底的超临界干燥方法

    公开(公告)号：US09437416B2

    公开(公告)日：2016-09-06

    申请号：US13231956

    申请日：2011-09-13

    申请人： Hidekazu Hayashi ,  Hiroshi Tomita ,  Yukiko Kitajima ,  Hisashi Okuchi ,  Yohei Sato

    发明人： Hidekazu Hayashi ,  Hiroshi Tomita ,  Yukiko Kitajima ,  Hisashi Okuchi ,  Yohei Sato

    IPC分类号： F26B3/00 ,  H01L21/02 ,  H01L21/67

    CPC分类号： H01L21/02101 ,  H01L21/02068 ,  H01L21/67017 ,  H01L21/67034

    摘要： According to one embodiment, a supercritical drying method for a semiconductor substrate includes introducing a semiconductor substrate formed with a metal film into a chamber, the surface of the substrate being wet with alcohol, supplying a supercritical fluid of carbon dioxide into the chamber, setting a temperature inside the chamber to a predetermined temperature, to replace the alcohol on the semiconductor substrate with the supercritical fluid, and discharging the supercritical fluid and the alcohol from the chamber while keeping the temperature inside the chamber at the predetermined temperature, to lower a pressure inside the chamber. The predetermined temperature is not lower than 75° C. but lower than a critical temperature of the alcohol.

    摘要翻译： 根据一个实施例，半导体衬底的超临界干燥方法包括将形成有金属膜的半导体衬底引入腔室中，基底表面被醇润湿，将二氧化碳的超临界流体供应到腔室中， 在室内温度达到预定温度，用超临界流体替代半导体衬底上的醇，并且将超临界流体和醇从室中排出，同时将室内的温度保持在预定温度，以降低内部的压力 房间。 预定温度不低于75℃，但低于醇的临界温度。

    Supercritical drying method and apparatus for semiconductor substrates
    5.
    发明授权
    Supercritical drying method and apparatus for semiconductor substrates 有权
    半导体衬底的超临界干燥方法和装置

    公开(公告)号：US08372212B2

    公开(公告)日：2013-02-12

    申请号：US13369970

    申请日：2012-02-09

    申请人： Yohei Sato ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Hidekazu Hayashi ,  Yukiko Kitajima ,  Takayuki Toshima ,  Mitsuaki Iwashita ,  Kazuyuki Mitsuoka ,  Gen You ,  Hiroki Ohno ,  Takehiko Orii

    发明人： Yohei Sato ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Hidekazu Hayashi ,  Yukiko Kitajima ,  Takayuki Toshima ,  Mitsuaki Iwashita ,  Kazuyuki Mitsuoka ,  Gen You ,  Hiroki Ohno ,  Takehiko Orii

    IPC分类号： B08B3/04

    CPC分类号： F26B3/02

    摘要： According to one embodiment, a supercritical drying method comprises cleaning a semiconductor substrate with a chemical solution, rinsing the semiconductor substrate with pure water after the cleaning, changing a liquid covering a surface of the semiconductor substrate from the pure water to alcohol by supplying the alcohol to the surface after the rinsing, guiding the semiconductor substrate having the surface wetted with the alcohol into a chamber, discharging oxygen from the chamber by supplying an inert gas into the chamber, putting the alcohol into a supercritical state by increasing temperature in the chamber to a critical temperature of the alcohol or higher after the discharge of the oxygen, and discharging the alcohol from the chamber by lowering pressure in the chamber and changing the alcohol from the supercritical state to a gaseous state. The chamber contains SUS. An inner wall face of the chamber is subjected to electrolytic polishing.

    摘要翻译： 根据一个实施方案，超临界干燥方法包括用化学溶液清洗半导体衬底，在清洁之后用纯水冲洗半导体衬底，通过供应醇将覆盖半导体衬底的表面的液体从纯水改变为醇 在冲洗后的表面上引导具有被醇润湿的表面的半导体衬底进入腔室，通过向室中供应惰性气体从室中排出氧气，通过增加室中的温度将醇置于超临界状态 醇的临界温度或排出氧后的较高温度，并且通过降低室中的压力并将醇从超临界状态改变为气态，从室中排出醇。 房间包含SUS。 对室的内壁面进行电解抛光。

    SUPERCRITICAL DRYING METHOD AND SUPERCRITICAL DRYING APPARATUS
    6.
    发明申请
    SUPERCRITICAL DRYING METHOD AND SUPERCRITICAL DRYING APPARATUS 审中-公开
    超临界干燥方法和超临界干燥装置

    公开(公告)号：US20110220152A1

    公开(公告)日：2011-09-15

    申请号：US12963952

    申请日：2010-12-09

    申请人： Yukiko KITAJIMA ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Hidekazu Hayashi ,  Tatsuhiko Koide

    发明人： Yukiko KITAJIMA ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Hidekazu Hayashi ,  Tatsuhiko Koide

    IPC分类号： B08B3/00 ,  F26B21/00

    CPC分类号： F26B3/00 ,  H01L21/67028 ,  H01L21/67034

    摘要： According to one embodiment, a substrate having a plurality of adjacent patterns on one surface thereof is cleaned by cleaning liquid. Subsequently, after the cleaning liquid is displaced with pure water, the pure water is displaced with displacement liquid. Under a condition that the displacement liquid among the patterns does not vaporize, the displacement liquid not contributing to prevention of collapse of the patterns is removed. After the displacement liquid is removed, the substrate is held in supercritical fluid and the displacement liquid among the patterns is displaced with the supercritical fluid. After the displacement liquid among the patterns is displaced with the supercritical fluid, the supercritical fluid adhering to the substrate is vaporized.

    摘要翻译： 根据一个实施例，在其一个表面上具有多个相邻图案的基板通过清洗液体被清洁。 随后，在用纯水置换清洗液之后，用置换液体移动纯水。 在图案中的位移液不会蒸发的条件下，不利于防止图案塌陷的位移液被去除。 在取出置换液后，将基板保持在超临界流体中，并且图案中的置换液体与超临界流体一起移位。 在图案中的位移液体被超临界流体置换之后，附着在基板上的超临界流体被蒸发。

    Supercritical drying method for semiconductor substrate
    7.
    发明授权
    Supercritical drying method for semiconductor substrate 有权
    半导体衬底的超临界干燥方法

    公开(公告)号：US08709170B2

    公开(公告)日：2014-04-29

    申请号：US13052232

    申请日：2011-03-21

    申请人： Yohei Sato ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Hidekazu Hayashi ,  Yukiko Kitajima

    发明人： Yohei Sato ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Hidekazu Hayashi ,  Yukiko Kitajima

    IPC分类号： B08B7/00 ,  B08B7/04 ,  B08B3/00

    CPC分类号： H01L21/67034

    摘要： In one embodiment, after rinsing a semiconductor substrate having a fine pattern formed thereon with pure water, the pure water staying on the semiconductor substrate is substituted with a water soluble organic solvent, and then, the semiconductor substrate is introduced into a chamber in a state wet with the water soluble organic solvent. Then, the water soluble organic solvent is turned into a supercritical state by increasing a temperature inside of the chamber. Thereafter, the inside of the chamber is reduced in pressure while keeping the inside of the chamber at a temperature enough not to liquefy the pure water (i.e., rinsing pure water mixed into the water soluble organic solvent), and further, the water soluble organic solvent in the supercritical state is changed into a gaseous state, to be discharged from the chamber, so that the semiconductor substrate is dried.

    摘要翻译： 在一个实施方案中，在用纯水冲洗其上形成有精细图案的半导体衬底之后，将残留在半导体衬底上的纯水用水溶性有机溶剂代替，然后将半导体衬底引入到室中 用水溶性有机溶剂润湿。 然后，水溶性有机溶剂通过增加室内的温度而变成超临界状态。 此后，室内压力降低，同时保持室内不足液化纯水的温度（即冲洗混入水溶性有机溶剂中的纯水），此外，水溶性有机溶剂 处于超临界状态的溶剂变成气态，从室排出，使得半导体基板干燥。

    SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING APPARATUS, AND STORAGE MEDIUM
    10.
    发明申请
    SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING APPARATUS, AND STORAGE MEDIUM 审中-公开
    基板处理方法，基板处理装置和存储介质

    公开(公告)号：US20120304485A1

    公开(公告)日：2012-12-06

    申请号：US13482318

    申请日：2012-05-29

    申请人： Hidekazu Hayashi ,  Yohei Sato ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Kazuyuki Mitsuoka ,  Mitsuaki Iwashita ,  Takehiko Orii ,  Gen You ,  Hiroki Ohno ,  Takayuki Toshima

    发明人： Hidekazu Hayashi ,  Yohei Sato ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Kazuyuki Mitsuoka ,  Mitsuaki Iwashita ,  Takehiko Orii ,  Gen You ,  Hiroki Ohno ,  Takayuki Toshima

    IPC分类号： F26B7/00

    CPC分类号： H01L21/67028 ,  B08B7/0021 ,  H01L21/02057 ,  H01L21/02101

    摘要： A substrate processing method and apparatus which can remove an anti-drying liquid, which has entered a three-dimensional pattern with recessed portions formed in a substrate, in a relatively short time. The substrate processing method includes the steps of: carrying a substrate, having a three-dimensional pattern formed in a surface, into a processing container, said pattern being covered with an anti-drying liquid that has entered the recessed portions of the pattern; heating the substrate and supplying a pressurizing gas or a fluid in a high-pressure state into the processing container, thereby forming a high-pressure atmosphere in the processing container before the anti-drying liquid vaporizes to such an extent as to cause pattern collapse and bringing the anti-drying liquid into a high-pressure state while keeping the liquid in the recessed portions of the pattern; and thereafter discharging a fluid in a high-pressure state or a gaseous state from the processing container.

    摘要翻译： 一种基板处理方法和装置，其能够在相当短的时间内去除已经进入具有形成在基板中的凹部的三维图案的抗干燥液体。 基板处理方法包括以下步骤：将具有形成在表面上的三维图案的基板运送到处理容器中，所述图案被已经进入图案的凹部的防干燥液体覆盖; 加热基板并将高压状态的加压气体或流体供给到处理容器中，从而在防干燥液体蒸发之前在处理容器中形成高压气氛，使其形成图案塌陷， 将防干燥液体保持在高压状态，同时将液体保持在图案的凹部中; 然后从处理容器中排出处于高压状态或气态的流体。