公开(公告)号：US20090261328A1

公开(公告)日：2009-10-22

申请号：US12423123

申请日：2009-04-14

申请人： Hidekazu MIYAIRI ,  Koji DAIRIKI ,  Yuji EGI ,  Yasuhiro JINBO ,  Toshiyuki ISA

发明人： Hidekazu MIYAIRI ,  Koji DAIRIKI ,  Yuji EGI ,  Yasuhiro JINBO ,  Toshiyuki ISA

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L27/1288 ,  C23C16/0272 ,  C23C16/24 ,  C23C16/4404 ,  H01L27/1214 ,  H01L29/04 ,  H01L29/41733 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78669 ,  H01L29/78678 ,  H01L29/78696

摘要： Disclosed is a thin film transistor which includes, over a substrate having an insulating surface, a gate insulating layer covering a gate electrode; a semiconductor layer which functions as a channel formation region; and a semiconductor layer including an impurity element imparting one conductivity type. The semiconductor layer exists in a state that a plurality of crystalline particles is dispersed in an amorphous silicon and that the crystalline particles have an inverted conical or inverted pyramidal shape. The crystalline particles grow approximately radially in a direction in which the semiconductor layer is deposited. Vertexes of the inverted conical or inverted pyramidal crystal particles are located apart from an interface between the gate insulating layer and the semiconductor layer.

摘要翻译： 公开了一种薄膜晶体管，其在具有绝缘表面的衬底上方包括覆盖栅电极的栅绝缘层; 用作沟道形成区域的半导体层; 以及包含赋予一种导电型的杂质元素的半导体层。 半导体层以多个结晶粒子分散在非晶硅中的状态存在，并且结晶粒子具有倒锥形或倒棱锥形状。 晶体颗粒沿半导体层沉积的方向大致径向生长。 倒锥形或倒锥形晶体颗粒的顶点位于与栅极绝缘层和半导体层之间的界面之外。

公开(公告)号：US20100096631A1

公开(公告)日：2010-04-22

申请号：US12423111

申请日：2009-04-14

申请人： Hidekazu MIYAIRI ,  Koji DAIRIKI ,  Yuji EGI ,  Yasuhiro JINBO ,  Toshiyuki ISA

发明人： Hidekazu MIYAIRI ,  Koji DAIRIKI ,  Yuji EGI ,  Yasuhiro JINBO ,  Toshiyuki ISA

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L27/1288 ,  H01L27/1214 ,  H01L29/04 ,  H01L29/41733 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78669 ,  H01L29/78678 ,  H01L29/78696

摘要： A thin film transistor includes, over a substrate having an insulating surface, a gate insulating layer covering a gate electrode; a semiconductor layer which includes a plurality of crystalline regions in an amorphous structure and which forms a channel formation region, in contact with the gate insulating layer; a semiconductor layer including an impurity element imparting one conductivity type, which forms source and drain regions; and a buffer layer including an amorphous semiconductor between the semiconductor layer and the semiconductor layer including an impurity element imparting one conductivity type. The crystalline regions have an inverted conical or inverted pyramidal crystal particle which grows approximately radially in a direction in which the semiconductor layer is deposited, from a position away from an interface between the gate insulating layer and the semiconductor layer.

摘要翻译： 薄膜晶体管包括在具有绝缘表面的衬底上，覆盖栅电极的栅绝缘层; 半导体层，其包括与所述栅极绝缘层接触的非晶结构中的多个结晶区域，并形成沟道形成区域; 包含赋予一种导电类型的杂质元素的半导体层，其形成源区和漏区; 以及包括在半导体层和半导体层之间的非晶半导体的缓冲层，其包括赋予一种导电类型的杂质元素。 晶体区域具有从远离栅极绝缘层和半导体层之间的界面的位置沿着沉积半导体层的方向大致径向生长的倒锥形或倒棱锥晶体颗粒。

公开(公告)号：US20120061676A1

公开(公告)日：2012-03-15

申请号：US13226775

申请日：2011-09-07

申请人： Yuji EGI ,  Tetsuhiro TANAKA ,  Toshiyuki ISA ,  Hidekazu MIYAIRI ,  Koji DAIRIKI ,  Yoichi KUROSAWA ,  Kunihiko SUZUKI

发明人： Yuji EGI ,  Tetsuhiro TANAKA ,  Toshiyuki ISA ,  Hidekazu MIYAIRI ,  Koji DAIRIKI ,  Yoichi KUROSAWA ,  Kunihiko SUZUKI

IPC分类号： H01L29/04 ,  H01L29/786

CPC分类号： H01L29/78618 ,  H01L29/78648 ,  H01L29/78669 ,  H01L29/78678 ,  H01L29/78696

摘要： A highly reliable transistor in which change in electrical characteristics is suppressed is provided. A highly reliable transistor in which change in electrical characteristics is suppressed is manufactured with high productivity. A display device with less image deterioration over time is provided. An inverted staggered thin film transistor which includes, between a gate insulating film and impurity semiconductor films functioning as source and drain regions, a semiconductor stacked body including a microcrystalline semiconductor region and a pair of amorphous semiconductor regions. In the microcrystalline semiconductor region, the nitrogen concentration on the gate insulating film side is low and the nitrogen concentration in a region in contact with the amorphous semiconductor is high. Further, an interface with the amorphous semiconductor has unevenness.

摘要翻译： 提供了其中抑制电特性变化的高度可靠的晶体管。 以高生产率制造其中抑制电特性变化的高度可靠的晶体管。 提供了具有随时间图像劣化的显示装置。 一种倒置交错薄膜晶体管，其包括在栅极绝缘膜和用作源极和漏极区域的杂质半导体膜之间，包括微晶半导体区域和一对非晶半导体区域的半导体层叠体。 在微晶半导体区域中，栅绝缘膜侧的氮浓度低，与非晶半导体接触的区域的氮浓度高。 此外，与非晶半导体的界面具有不均匀性。

公开(公告)号：US20110013117A1

公开(公告)日：2011-01-20

申请号：US12891222

申请日：2010-09-27

申请人： Yuji EGI ,  Tetsuji ISHITANI ,  Takeshi NISHI

发明人： Yuji EGI ,  Tetsuji ISHITANI ,  Takeshi NISHI

IPC分类号： G02F1/13357 ,  G02F1/1335

CPC分类号： G02F1/133528 ,  G02F2001/133531 ,  G02F2001/13356

摘要： A display device with a higher contrast ratio is provided. The display device is provided with stacked polarizing plates arranged displaced from a parallel nicol state. Moreover, in the display device, at least one of a pair of stacked polarizing plates is displaced from a parallel state. The pair of stacked polarizing plates is arranged in a cross nicol state. A retardation plate may be provided between the polarizing plate and the substrate. As a result, the contrast ratio can be increased.

摘要翻译： 提供了具有较高对比度的显示装置。 显示装置设置有从平行尼科尔状态排列的堆叠的偏振片。 此外，在显示装置中，一对叠层偏振片中的至少一个从平行状态移位。 一对堆叠的偏振片以交叉尼科尔状态布置。 可以在偏振板和基板之间设置相位差板。 结果，可以提高对比度。

公开(公告)号：US20070177071A1

公开(公告)日：2007-08-02

申请号：US11626115

申请日：2007-01-23

申请人： Yuji EGI ,  Tetsuji ISHITANI ,  Takeshi NISHI

发明人： Yuji EGI ,  Tetsuji ISHITANI ,  Takeshi NISHI

IPC分类号： G02F1/1335

CPC分类号： G02F1/133533 ,  G02F1/13363 ,  G02F2001/133531 ,  G02F2203/04 ,  G02F2203/64

摘要： To provide a display device having a high contrast ratio by a simple and easy method and to manufacture a high-performance display device at low cost, in a display device having a display element between a pair of light-transmitting substrates, layers each including a polarizer having different wavelength distribution of extinction coefficient from each other with respect to the absorption axes are stacked and provided on an outer side of the light-transmitting substrates. Further, a retardation plate may be provided between the stacked polarizers.

摘要翻译： 为了通过简单且容易的方法提供具有高对比度的显示装置并且以低成本制造高性能显示装置，在具有一对透光基板之间的显示元件的显示装置中， 在透光性基板的外侧层叠具有彼此相对于吸收轴的消光系数波长分布不同的偏振片。 此外，可以在堆叠的偏振器之间设置延迟板。

公开(公告)号：US20070146580A1

公开(公告)日：2007-06-28

申请号：US11613785

申请日：2006-12-20

申请人： Tetsuji Ishitani ,  Yuji EGI ,  Takeshi Nishi

发明人： Tetsuji Ishitani ,  Yuji EGI ,  Takeshi Nishi

IPC分类号： G02F1/1335

CPC分类号： G02B5/3025 ,  G02B27/28 ,  G02F1/133528 ,  G02F2001/133531 ,  G02F2001/133638

摘要： An object of the invention is to provide a display device having a high contrast ratio by a simple and easy method. Another object of the invention is to manufacture such a high-performance display device at low cost. In a display device having a display element between a pair of light-transmissive substrates, polarizing plates each having an extinction coefficient of an absorption axis which is different from that of an absorption axis of another polarizing plate are stacked to be provided. At that time, the stacked polarizing plates are arranged so as to be in a parallel nicol state. A wave plate and a retardation film may be provided between the stacked polarizing plates and the substrates.

摘要翻译： 本发明的目的是提供一种通过简单且容易的方法具有高对比度的显示装置。 本发明的另一个目的是以低成本制造这种高性能显示装置。 在具有在一对透光性基板之间具有显示元件的显示装置中，设置各自具有与另一偏振片的吸收轴不同的吸收轴的消光系数的偏振片。 此时，堆叠的偏振片被布置成平行尼科尔状态。 可以在堆叠的偏光板和基板之间设置波片和延迟膜。

公开(公告)号：US20120032581A1

公开(公告)日：2012-02-09

申请号：US13275877

申请日：2011-10-18

申请人： Yuji EGI ,  Jiro Nishida ,  Takeshi Nishi

发明人： Yuji EGI ,  Jiro Nishida ,  Takeshi Nishi

IPC分类号： H01J19/24

CPC分类号： H01J11/12 ,  H01J11/44 ,  H01J31/123 ,  H01J2211/442 ,  H01J2211/444 ,  H01J2329/892

摘要： It is an object of the present invention to provide a PDP and an FED with excellent visibility and a high level of reliability that each have an antireflective function by which reflection of external light can be reduced. A plurality of adjacent pyramidal-shaped projections and an antireflective layer equipped with a covering film that covers the projections are provided. The reflection of light is prevented by the index of refraction of incident light from external being changed by a pyramid, which is a physical shape, projecting out toward an external side (atmosphere side) of a substrate that is to be used as a display screen as well as by the covering film used to cover the projections being formed of a material that has a higher index of refraction than the index of refraction of the pyramidal projection.

摘要翻译： 本发明的目的是提供具有优异的可见性和高水平的可靠性的PDP和FED，每个具有可以减少外部光的反射的抗反射功能。 设置有多个相邻的金字塔形突起和设置有覆盖突起的覆盖膜的抗反射层。 光的反射被来自外部的入射光的折射率由作为物理形状的金字塔的折射率来防止，该金字塔朝向要用作显示屏的基板的外侧（气氛侧）突出 以及用于覆盖突起的覆盖膜由具有比金字塔形突起的折射率更高的折射率的材料形成。

公开(公告)号：US20110063545A1

公开(公告)日：2011-03-17

申请号：US12947855

申请日：2010-11-17

申请人： Yuji EGI ,  Tetsuji Ishitani ,  Takeshi Nishi

发明人： Yuji EGI ,  Tetsuji Ishitani ,  Takeshi Nishi

IPC分类号： G02F1/1335

CPC分类号： G02F1/133533 ,  G02F2001/133531

摘要： An object of the invention is to provide a display device having a high contrast ratio. Another object of the invention is to manufacture such a high-performance display device at low cost. In a display device having a display element between a pair of light-transmissive substrates, polarizer-including layers, which have different wavelength distributions of extinction coefficients, are stacked so that absorption axes are in a parallel nicol state, over each light-transmissive substrate. Absorption axes of one of a pair of stacks of polarizers and the other together which interpose the display element are deviated from a cross nicol state. A retardation plate may be provided between the stack of polarizing plates and the substrate.

摘要翻译： 本发明的目的是提供一种具有高对比度的显示装置。 本发明的另一个目的是以低成本制造这种高性能显示装置。 在具有在一对透光性基板之间具有显示元件的显示装置中，将具有不同的消光系数波长分布的偏振片包含层叠，使得吸收轴处于平行尼科尔状态，在每个透光基板 。 一对偏振器堆叠中的一个的吸收轴和插入显示元件的另一个的偏移轴偏离交叉尼科尔状态。 可以在偏振片堆和衬底之间设置相位差板。

公开(公告)号：US20080158682A1

公开(公告)日：2008-07-03

申请号：US11950621

申请日：2007-12-05

申请人： Yuji EGI ,  Jiro NISHIDA ,  Takeshi NISHI

发明人： Yuji EGI ,  Jiro NISHIDA ,  Takeshi NISHI

IPC分类号： G02B27/00 ,  G02F1/1335

CPC分类号： G02B1/118 ,  G02B5/003 ,  G02B5/1809 ,  G02B26/026 ,  G02F1/133502 ,  G02F1/133528

摘要： It is an object to provide a high-visibility antireflection film having an antireflection function which can further reduce reflection and a display device that has the antireflection film. A plurality of projections in a pyramidal shape (hereinafter, referred to as pyramidal projection) that are adjacent to each other are provided, and the refractive index of the projection is made to change by the physical pyramidal shape to the outer side (air side) from a surface of a display screen, so that reflection of light is prevented. In addition, the plurality of pyramidal projections are each covered with a film formed of a material having a higher refractive index than the pyramidal projections.

摘要翻译： 本发明的目的是提供具有能够进一步减少反射的抗反射功能的高可见度抗反射膜和具有防反射膜的显示装置。 设置有彼此相邻的金字塔形状的多个突起（以下称为金字塔状突起），突起的折射率通过物理金字塔形状向外侧（空气侧）变化， 从显示屏的表面，防止光的反射。 此外，多个金字塔状突起各自被由具有比金字塔形突起更高的折射率的材料形成的膜覆盖。

公开(公告)号：US20120021570A1

公开(公告)日：2012-01-26

申请号：US13184589

申请日：2011-07-18

申请人： Ryota TAJIMA ,  Tetsuhiro TANAKA ,  Takashi OHTSUKI ,  Ryo TOKUMARU ,  Yuji EGI ,  Erika KATO ,  Miyako MORIKUBO

发明人： Ryota TAJIMA ,  Tetsuhiro TANAKA ,  Takashi OHTSUKI ,  Ryo TOKUMARU ,  Yuji EGI ,  Erika KATO ,  Miyako MORIKUBO

IPC分类号： H01L21/336 ,  H01L21/20

CPC分类号： H01L29/78696 ,  C30B25/105 ,  C30B25/183 ,  C30B29/06 ,  C30B29/08 ,  H01L29/04 ,  H01L29/78618 ,  H01L29/78648

摘要： A seed crystal including mixed phase grains having high crystallinity with a low grain density is formed under a first condition, and a microcrystalline semiconductor film is formed over the seed crystal under a second condition which allows the mixed phase grains in the seed crystal to grow to fill a space between the mixed phase grains. In the first condition, the flow rate of hydrogen is 50 times or greater and 1000 times or less that of a deposition gas containing silicon or germanium, and the pressure in a process chamber is greater than 1333 Pa and 13332 Pa or less. In the second condition, the flow rate of hydrogen is 100 times or greater and 2000 times or less that of a deposition gas containing silicon or germanium, and the pressure in the process chamber is 1333 Pa or greater and 13332 Pa or less.

摘要翻译： 在第一条件下形成包括具有低晶粒密度的高结晶度的混合相晶粒的晶种，并且在第二条件下在晶种上形成微晶半导体膜，所述第二条件允许晶种中的混晶相生长至 填充混合晶粒之间的空间。 在第一条件下，氢气的流量为含有硅或锗的沉积气体的50倍以上且1000倍以下，处理室中的压力大于1333Pa，13332Pa以下。 在第二条件下，氢气的流量为含有硅或锗的沉积气体的100倍以上且2000倍以下，处理室内的压力为1333Pa以上且13332Pa以下。