公开(公告)号：US20120061676A1

公开(公告)日：2012-03-15

申请号：US13226775

申请日：2011-09-07

申请人： Yuji EGI ,  Tetsuhiro TANAKA ,  Toshiyuki ISA ,  Hidekazu MIYAIRI ,  Koji DAIRIKI ,  Yoichi KUROSAWA ,  Kunihiko SUZUKI

发明人： Yuji EGI ,  Tetsuhiro TANAKA ,  Toshiyuki ISA ,  Hidekazu MIYAIRI ,  Koji DAIRIKI ,  Yoichi KUROSAWA ,  Kunihiko SUZUKI

IPC分类号： H01L29/04 ,  H01L29/786

CPC分类号： H01L29/78618 ,  H01L29/78648 ,  H01L29/78669 ,  H01L29/78678 ,  H01L29/78696

摘要： A highly reliable transistor in which change in electrical characteristics is suppressed is provided. A highly reliable transistor in which change in electrical characteristics is suppressed is manufactured with high productivity. A display device with less image deterioration over time is provided. An inverted staggered thin film transistor which includes, between a gate insulating film and impurity semiconductor films functioning as source and drain regions, a semiconductor stacked body including a microcrystalline semiconductor region and a pair of amorphous semiconductor regions. In the microcrystalline semiconductor region, the nitrogen concentration on the gate insulating film side is low and the nitrogen concentration in a region in contact with the amorphous semiconductor is high. Further, an interface with the amorphous semiconductor has unevenness.

摘要翻译： 提供了其中抑制电特性变化的高度可靠的晶体管。 以高生产率制造其中抑制电特性变化的高度可靠的晶体管。 提供了具有随时间图像劣化的显示装置。 一种倒置交错薄膜晶体管，其包括在栅极绝缘膜和用作源极和漏极区域的杂质半导体膜之间，包括微晶半导体区域和一对非晶半导体区域的半导体层叠体。 在微晶半导体区域中，栅绝缘膜侧的氮浓度低，与非晶半导体接触的区域的氮浓度高。 此外，与非晶半导体的界面具有不均匀性。

公开(公告)号：US20100230677A1

公开(公告)日：2010-09-16

申请号：US12715629

申请日：2010-03-02

申请人： Hidekazu MIYAIRI ,  Erika KATO ,  Kunihiko SUZUKI

发明人： Hidekazu MIYAIRI ,  Erika KATO ,  Kunihiko SUZUKI

IPC分类号： H01L29/786 ,  H01L21/336 ,  H01L21/31

CPC分类号： H01L29/4908 ,  H01L27/1214 ,  H01L27/1288 ,  H01L29/66765 ,  H01L29/78669 ,  H01L29/78678 ,  H01L29/78696

摘要： A thin film transistor in which deterioration at initial operation is not likely to be caused and a manufacturing method thereof. A transistor which includes a gate insulating layer at least whose uppermost surface is a silicon nitride layer, a semiconductor layer over the gate insulating layer, and a buffer layer over the semiconductor layer and in which the concentration of nitrogen in the vicinity of an interface between the semiconductor layer and the gate insulating layer, which is in the semiconductor layer is lower than that of the buffer layer and other parts of the semiconductor layer. Such a thin film transistor can be manufactured by exposing the gate insulating layer to an air atmosphere and performing plasma treatment on the gate insulating layer before the semiconductor layer is formed.

摘要翻译： 其中不可能引起初始操作劣化的薄膜晶体管及其制造方法。 一种晶体管，其至少具有栅极绝缘层，其最上表面是氮化硅层，栅极绝缘层上的半导体层，以及半导体层上的缓冲层，其中，在界面附近的氮浓度 半导体层中的半导体层和栅极绝缘层比缓冲层和半导体层的其它部分低。 这样的薄膜晶体管可以通过将栅极绝缘层暴露于空气气氛中，并且在形成半导体层之前对栅极绝缘层进行等离子体处理来制造。

公开(公告)号：US20110200749A1

公开(公告)日：2011-08-18

申请号：US13020188

申请日：2011-02-03

申请人： Kunihiko SUZUKI ,  Masayoshi Yajima

发明人： Kunihiko SUZUKI ,  Masayoshi Yajima

IPC分类号： C23C16/458 ,  C23C16/455 ,  C23C16/46

CPC分类号： C23C16/4402 ,  C23C16/455 ,  C23C16/4585

摘要： A chamber includes at its upper section a gas inlet from which to introduce a deposition gas. The inner walls of the chamber are covered by a cylindrical liner, and the chamber houses a susceptor assembly on which to place a semiconductor substrate. The liner includes a barrel section inside which the susceptor assembly is placed; a head section that is located right below the gas inlet and smaller in horizontal cross-sectional area than the barrel section; and a stepped section that connects the barrel section and the head section. The susceptor assembly is formed by fixing a ring plate to a susceptor via support posts. The ring plate covers the periphery of the stepped section of the liner. By the deposition gas flowing in a downward direction from the gas inlet into the chamber, a crystalline film is formed on the substrate positioned on the susceptor assembly.

摘要翻译： 一个室在其上部包括一个气体入口，从该入口引入沉积气体。 腔室的内壁由圆柱形衬套覆盖，并且腔室容纳基座组件，放置半导体衬底。 衬套包括一个筒体部分，底座组件被放置在其中; 头部位于气体入口的正下方，水平横截面积小于桶部分; 以及连接筒部和头部的台阶部。 通过支撑柱将环板固定到基座来形成基座组件。 环板覆盖衬套的台阶部分的周边。 通过从气体入口向室内向下流动的沉积气体，在位于基座组件上的基板上形成结晶膜。

公开(公告)号：US20100305832A1

公开(公告)日：2010-12-02

申请号：US12786903

申请日：2010-05-25

申请人： Seiji ASANO ,  Shingo KIMURA ,  Kenichi KOTABE ,  Kenji MIZUSHIMA ,  Kunihiko SUZUKI

发明人： Seiji ASANO ,  Shingo KIMURA ,  Kenichi KOTABE ,  Kenji MIZUSHIMA ,  Kunihiko SUZUKI

IPC分类号： F02D41/04 ,  F01L1/34 ,  F02P5/04

CPC分类号： F02D41/0002 ,  F02D13/0219 ,  F02D41/18 ,  F02D2041/001 ,  F02D2200/0402 ,  F02D2200/0408 ,  F02M26/01 ,  F02P5/1504 ,  Y02T10/18 ,  Y02T10/42 ,  Y02T10/46

摘要： There is provided an engine control device which can accurately calculate a compensation coefficient used for transient compensation of an ignition timing without involving a complicated and large-scale calculation model in order to prevent a combustion deterioration and the like caused by a mechanical response delay and the like of the variable valve timing mechanism at a transition time such as an acceleration/deceleration time. The angular difference between each current real phase of the intake/exhaust valves 21 and 22 and a target phase set based on an engine load equivalent amount such as an intake air amount is obtained; the shift amount or its correlation value between a current real intake air amount and a theoretical intake air amount value calculated using a pressure inside an intake manifold when each phase of the intake/exhaust valves has reached the target phase is obtained; further a compensation coefficient for matching the shift amount or its correlation value with the angular difference is obtained; and the compensation coefficient is used to perform transient compensation of an ignition timing.

摘要翻译： 提供了一种发动机控制装置，其可以精确地计算用于点火正时的瞬时补偿的补偿系数，而不涉及复杂的大型计算模型，以便防止由机械响应延迟引起的燃烧劣化等， 类似于可变气门正时机构在诸如加速/减速时间的转变时间。 获得进气/排气门21和22的每个电流实际相位与基于诸如进气量之类的发动机负载当量量设定的目标相位之间的角度差; 获得当进气/排气阀的各相达到目标相位时，使用进气歧管内的压力计算出的当前实际进气量与理论进气量值之间的偏移量或其相关值; 获得用于使偏移量或其相关值与角度差匹配的补偿系数; 并且使用补偿系数来执行点火正时的瞬时补偿。

公开(公告)号：US20130024088A1

公开(公告)日：2013-01-24

申请号：US13551401

申请日：2012-07-17

申请人： Kunihiko SUZUKI ,  Toshio Hori ,  Koji Matsufuji ,  Kenji Takada ,  Heikichi Kamoshita ,  Hiroshi Sekine

发明人： Kunihiko SUZUKI ,  Toshio Hori ,  Koji Matsufuji ,  Kenji Takada ,  Heikichi Kamoshita ,  Hiroshi Sekine

IPC分类号： F02D41/26 ,  F02D43/04

CPC分类号： F02D41/1494 ,  F02D41/062 ,  F02D41/1445 ,  F02D41/1446 ,  F02D2041/1433 ,  F02D2041/1472

摘要： Control device of an internal combustion engine that determines whether or not to perform sensor element heating control of an air-fuel ratio sensor with high accuracy based on the mass of condensed water in an exhaust pipe. The control device computes the rate of change of condensed water mass in an exhaust pipe based on the saturated water vapor pressure and the water vapor partial pressure of exhaust gas, and computes the rate of change of evaporation mass in the exhaust pipe based on the amount of heat which the condensed water receives in the exhaust pipe. The control device updates the mass of condensed water based on the rate of change of condensed water mass and the rate of change of evaporation mass, and determines whether or not to perform heating control by a heating controlling unit based on the updated mass of condensed water.

摘要翻译： 内燃机的控制装置，其基于排气管中的冷凝水的质量，判定是否以高精度进行空燃比传感器的传感器元件加热控制。 控制装置基于饱和水蒸气压和排气的水蒸汽分压来计算排气管中的冷凝水质量的变化率，并且基于排气管的蒸发量的变化率来计算蒸发量的变化率 冷凝水在排气管中受到的热量。 控制装置基于冷凝水质量的变化率和蒸发质量的变化率来更新冷凝水的质量，并且基于更新的冷凝水质量来确定是否由加热控制单元进行加热控制 。

公开(公告)号：US20120244685A1

公开(公告)日：2012-09-27

申请号：US13421901

申请日：2012-03-16

申请人： Kunihiko SUZUKI ,  Shinichi MITANI

发明人： Kunihiko SUZUKI ,  Shinichi MITANI

IPC分类号： H01L21/20 ,  C23C16/52 ,  C23C16/455

CPC分类号： H01L21/67017 ,  C23C16/24 ,  C23C16/45523 ,  C23C16/45561 ,  H01L21/6719

摘要： A semiconductor manufacturing apparatus includes: a plurality of reaction chambers into which wafers are introduced and deposition process is performed; a material gas supply mechanism that includes a plurality of material gas supply lines that respectively supply a material gas to the plurality of reaction chambers and a flow rate control mechanism that controls a flow rate of the marital gas in the material gas supply lines; a carrier gas supply mechanism that includes a plurality of carrier gas supply lines that respectively supplies a carrier gas into the plurality of reaction chambers; and a material gas switching mechanism that intermittently opens and closes the plurality of material gas supply lines respectively so that at least one of the plurality of material gas supply lines comes to be in an opened state at a same time, and sequentially switches the reaction chamber to which the material gas is supplied.

摘要翻译： 半导体制造装置包括：多个反应室，其中引入晶片并进行沉积处理; 材料气体供给机构，其包括分别向多个反应室供给原料气体的多个原料气体供给管线和控制所述原料气体供给管路中的所述结婚气体的流量的流量控制机构; 载气供给机构，其包括分别将载气供给到所述多个反应室中的多个载气供给管线; 以及分别间歇地打开和关闭多个原料气体供给管线的材料气体切换机构，使得多个原料气体供给管线中的至少一个同时进入打开状态，并且依次切换反应室 供应原料气体。

公开(公告)号：US20120184054A1

公开(公告)日：2012-07-19

申请号：US13350102

申请日：2012-01-13

申请人： Kunihiko SUZUKI ,  Hironobu HIRATA

发明人： Kunihiko SUZUKI ,  Hironobu HIRATA

IPC分类号： H01L21/205 ,  C23C16/52 ,  C23C16/455

CPC分类号： C23C16/4401 ,  C23C16/24 ,  C23C16/4412

摘要： Provided is a semiconductor manufacturing apparatus including: a reaction chamber including a gas supply inlet and a gas exhaust outlet, and into which a wafer is to be introduced; a process gas supply mechanism that supplies process gas into the reaction chamber from the gas supply inlet of the reaction chamber; a wafer retaining member that is arranged in the reaction chamber and that retains the wafer; a heater that heats the wafer retained by the wafer retaining member to a predetermined temperature; a rotation drive control mechanism that rotates the wafer retaining member together with the wafer; a gas exhaustion mechanism that exhausts gas in the reaction chamber from the gas exhaust outlet of the reaction chamber; and a drain that is disposed at a bottom portion near a wall surface in the reaction chamber and that collects and discharges oily silane that drips from the wall surface.

摘要翻译： 提供一种半导体制造装置，包括：反应室，包括气体供给入口和排气出口，并且其中将引入晶片; 处理气体供给机构，其从所述反应室的气体供给口向所述反应室供给处理气体; 晶片保持构件，其布置在所述反应室中并保持所述晶片; 将由晶片保持构件保持的晶片加热到预定温度的加热器; 旋转驱动控制机构，其使晶片保持构件与晶片一起旋转; 气体排出机构，其从反应室的排气口排出反应室中的气体; 以及设置在反应室内的壁面附近的底部并排出从壁面滴下的油性硅烷的排水管。

公开(公告)号：US20110064878A1

公开(公告)日：2011-03-17

申请号：US12884652

申请日：2010-09-17

申请人： Kunihiko SUZUKI ,  Shinichi Mitani

发明人： Kunihiko SUZUKI ,  Shinichi Mitani

IPC分类号： C23C16/46 ,  C23C16/00

CPC分类号： C23C16/45521 ,  C30B25/10 ,  C30B29/06 ,  H01L21/67103 ,  H01L21/68792

摘要： A deposition apparatus 100 comprises: a heater 121 for heating a silicon wafer 101; an electrically-conductive busbar 123 for supporting the heater 121; and an electrode assembly 107 having a hollow rod electrode 108 with upper and lower openings for conducting electricity to the heater 121 and a connector 124, secured to the busbar 123, for connecting the busbars 123 to the rod electrode 108. Wafer heating by the heater 121 is conducted while a purge gas 117 is fed from the lower opening of the rod electrode 108 so that the purge gas 117 can flow through the upper opening of the rod electrode 108 and through a clearance 131 that is located at the joint surface between the busbar 123 and the connector 124 and communicates with the upper opening of the rod electrode 108.

摘要翻译： 沉积装置100包括：用于加热硅晶片101的加热器121; 用于支撑加热器121的导电母线123; 以及具有中空棒电极108的电极组件107，其具有用于向加热器121传导电力的上开口和下开口以及固定到母线123的用于将汇流条123连接到杆电极108的连接器124.加热器的晶片加热 在吹扫气体117从棒状电极108的下部开口供给的同时进行吹扫气体117，使得吹扫气体117能够流过杆状电极108的上部开口，并通过位于 母线123和连接器124，并与杆状电极108的上部开口连通。

公开(公告)号：US20100248458A1

公开(公告)日：2010-09-30

申请号：US12730571

申请日：2010-03-24

申请人： Shinichi MITANI ,  Kunihiko SUZUKI ,  Toshiro TSUMORI

发明人： Shinichi MITANI ,  Kunihiko SUZUKI ,  Toshiro TSUMORI

IPC分类号： H01L21/205 ,  C23C16/34

CPC分类号： C30B25/08 ,  C23C16/54 ,  C30B25/16 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262

摘要： The present invention provides a coating apparatus capable of efficiently performing a deposition process and also provides an efficient coating method.A coating apparatus 1 for performing a deposition process on substrates W placed in a coating chamber by metalorganic chemical vapor deposition includes three or more coating chambers, e.g., a first coating chamber 2, a second coating chamber 102, and a third coating chamber 202. These coating chambers are configured such that each coating chamber is controlled independently of the other coating chambers to form a different film on the substrates W by controlling at least the composition of the material gas, the flow rate of material gas, the temperature, and the pressure in the coating chamber. A cleaning unit 5 is provided outside the coating chambers 2, 102, 202 to clean the susceptor after the deposition process.

摘要翻译： 本发明提供能够有效地进行沉积工艺的涂覆设备，并且还提供有效的涂覆方法。 用于通过金属有机化学气相沉积在衬底W上进行沉积处理的涂覆设备1包括三个或更多个涂覆室，例如第一涂覆室2，第二涂覆室102和第三涂覆室202。 这些涂布室被构造成使得每个涂布室被独立于其它涂布室控制，以通过至少控制材料气体的组成，材料气体的流速，温度和温度来在基板W上形成不同的膜 涂层室内的压力。 清洁单元5设置在涂布室2,102,202的外侧，以在沉积处理之后清洁基座。

公开(公告)号：US20120206035A1

公开(公告)日：2012-08-16

申请号：US13370676

申请日：2012-02-10

申请人： Satoko SHITAGAKI ,  Satoshi SEO ,  Nobuharu OHSAWA ,  Hideko INOUE ,  Masahiro TAKAHASHI ,  Kunihiko SUZUKI

发明人： Satoko SHITAGAKI ,  Satoshi SEO ,  Nobuharu OHSAWA ,  Hideko INOUE ,  Masahiro TAKAHASHI ,  Kunihiko SUZUKI

IPC分类号： H05B33/14

CPC分类号： H01L51/5016 ,  C09K11/025 ,  C09K11/06 ,  C09K2211/1007 ,  C09K2211/1044 ,  C09K2211/185 ,  H01L51/0052 ,  H01L51/0056 ,  H01L51/0058 ,  H01L51/006 ,  H01L51/0061 ,  H01L51/0072 ,  H01L51/0074 ,  H01L51/0085 ,  H01L51/5056 ,  H01L51/5072 ,  H01L51/5088 ,  H01L51/5092 ,  H01L51/5218 ,  H01L51/5234 ,  H01L2251/55 ,  H05B33/14

摘要： Provided is a light-emitting element with high external quantum efficiency, or a light-emitting element with a long lifetime. The light-emitting element includes, between a pair of electrodes, a light-emitting layer including a guest material and a host material, in which an emission spectrum of the host material overlaps with an absorption spectrum of the guest material, and phosphorescence is emitted by conversion of an excitation energy of the host material into an excitation energy of the guest material. By using the overlap between the emission spectrum of the host material and the absorption spectrum of the guest material, the energy smoothly transfers from the host material to the guest material, so that the energy transfer efficiency of the light-emitting element is high. Accordingly, a light-emitting element with high external quantum efficiency can be achieved.

摘要翻译： 提供具有高外部量子效率的发光元件或具有长寿命的发光元件。 发光元件在一对电极之间包括包含客体材料的发光层和主体材料，其中主体材料的发射光谱与客体材料的吸收光谱重叠，并且发射磷光 通过将主体材料的激发能转化为客体材料的激发能量。 通过使用主体材料的发射光谱和客体材料的吸收光谱之间的重叠，能量从主体材料平滑地转移到客体材料，使得发光元件的能量传递效率高。 因此，可以实现具有高外部量子效率的发光元件。