摘要:
A high-speed image sensor has a plurality of signal converting means (30) for generating electric signals corresponding to an incident light intensity and a plurality of electric signal recording means (33) for recording electric signals output from corresponding signal converting means (30). The electric signal recording means (33) is linearly shaped and has a read-out line (58a) for each of longitudinal sections thereof. The read-out line (58) is used for directly reading out the electric signals out of a light receptive area.
摘要:
A fast imaging device 32 has a charge signal converter 33, a charge signal accumulator 36 and a charge signal transporter 37. A charge signal accumulator 36 is provided to each charge signal converter 33. A charge signal accumulator 36 extends linearly while inclining with respect to a line L2 connecting charge signal converter 33. The other end of a charge signal accumulator 36, connected at one end thereof to a charge signal converter 33 constituting a corresponding column, merges to a charge signal transporter 37. This construction reduces noise and increases a frame rate.
摘要:
A solid-state image pickup device of the charge-coupled type is improved in that the width W1 (as viewed in the charge transfer direction) of each of the transfer gate electrodes for generating transfer elements in the field shift mode, the width W2 (as viewed in the charge transfer direction) of each of the transfer gate electrode for generating potential barriers also in the field shift mode are selected so as to satisfy the following formula, and a buried channel junction depth X.sub.JBC of each of the vertical charge transfer paths are selected so as to satisfy W1>W2 and/or W2>2.multidot.X.sub.JBC. In the inventive image pickup device, the charge quantity transferred is increased without impairing the vertical resolution of the device.
摘要:
A solid-state CCD image pick-up device includes optoelectric transducing elements corresponding to pixels vertically and horizontally arrayed in a matrix forming column linear arrays defining a column direction and at least one vertical charge transfer path associated with a corresponding adjacent column linear array. Pixel signals are vertically transferred from the column linear arrays to the vertical charge transfer paths such that gate signals occurring at predetermined times are applied to gate electrodes of the vertical charge transfer paths to permit the pixel signals to be scan read by a horizontal charge transfer path. Switching elements are provided for transfer gate electrodes and a drive circuit sequentially generates drive signals for groups of gate electrodes during periods in which the switching elements are rendered conductive to allow a full frame scan read to be performed by supplying a predetermined number of timing signals to the gate electrodes. The pick-up device can be fabricated with high density integration and high pixel density and can be provided with an improved vertical overflow drain structure. The image pick-up device also provides an electronic shutter function having improved vertical resolution. A shift register for producing improved vertical resolution is also disclosed.
摘要:
A solid-state CCD image pick-up device includes optoelectric transducing elements corresponding to pixels vertically and horizontally arrayed in a matrix forming column linear arrays defining a column direction and at least one vertical charge transfer path associated with a corresponding adjacent column linear array. Pixel signals are vertically transferred from the column linear arrays to the vertical charge transfer paths such that gate signals occurring at predetermined times are applied to gate electrodes of the vertical charge transfer paths to permit the pixel signals to be scan read by a horizontal charge transfer path. Switching elements are provided for transfer gate electrodes and a drive circuit sequentially generates drive signals for groups of gate electrodes during periods in which the switching elements are rendered conductive to allow a full frame scan read to be performed by supplying a predetermined number of timing signals to the gate electrodes. The pick-up device can be fabricated with high density integration and high pixel density and can be provided with an improved vertical overflow drain structure. The image pick-up device also provides an electronic shutter function having improved vertical resolution. A shift register for producing improved vertical resolution is also disclosed.
摘要:
A floating diffusion region is formed at an edge of a light-receiving surface of an embedded photodiode, with a transfer gate electrode located therebetween. A first region, with radially extending portions centered on the FD region, and a second region, located to the outside of the first region, are created in the substantially sector-shaped light-receiving surface. A dopant whose conductivity type is the same as the signal charges to be collected in the first region are introduced, whereby an electric field for moving the signal charges from the radially extending sections towards the center is created due to a three-dimensional field effect. As a result, the charge-transfer time is reduced. Additionally, since a circuit element in the subsequent stage can be placed adjacent to the floating diffusion region, the parasitic capacitance of the floating diffusion region can be reduced and a highly sensitive element can be obtained.
摘要:
A solid-state image pickup device equipped with a high-speed electronic shutter function is comprised of photoelectric transducer elements arranged in matrix form, vertical transfer routes, a horizontal transfer route, and a vertical control circuit. The vertical control circuit simultaneously shifts signal charges from the photoelectric transducer elements to the vertical transfer routes, shifts a horizontal one-row portion of the signal charges in the vertical transfer routes to the horizontal transfer route, and also alternatively selects and vertically transfers a next one-row portion of the signal charges to the horizontal transfer route. Further, the image pickup device features an exhaust drain. A vertical charge-coupled device forms the vertical transfer routes; similarly, a horizontal charge-coupled device forms the horizontal transfer route.
摘要:
A floating diffusion region is formed at an edge of a light-receiving surface of an embedded photodiode, with a transfer gate electrode located therebetween. A first region, with radially extending portions centered on the FD region, and a second region, located to the outside of the first region, are created in the substantially sector-shaped light-receiving surface. A dopant whose conductivity type is the same as the signal charges to be collected in the first region are introduced, whereby an electric field for moving the signal charges from the radially extending sections towards the center is created due to a three-dimensional field effect. As a result, the charge-transfer time is reduced. Additionally, since a circuit element in the subsequent stage can be placed adjacent to the floating diffusion region, the parasitic capacitance of the floating diffusion region can be reduced and a highly sensitive element can be obtained.
摘要:
A solid-state CCD image pick-up device includes optoelectric transducing elements corresponding to pixels vertically and horizontally arrayed in a matrix forming column linear arrays defining a column direction and at least one vertical charge transfer path associated with a corresponding adjacent column linear array. Pixel signals are vertically transferred from the column linear arrays to the vertical charge transfer paths such that gate signals occurring at predetermined times are applied to gate electrodes of the vertical charge transfer paths to permit the pixel signals to be scan read by a horizontal charge transfer path. Switching elements are provided for transfer gate electrodes and a drive circuit sequentially generates drive signals for groups of gate electrodes during periods in which the switching elements are rendered conductive to allow a full frame scan read to be performed by supplying a predetermined number of timing signals to the gate electrodes. The pick-up device can be fabricated with high density integration and high pixel density and can be provided with an improved vertical overflow drain structure. The image pick-up device also provides an electronic shutter function having improved vertical resolution. A shift register for producing improved vertical resolution is also disclosed.