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    High-purity lanthanum isoproxide and a process for producing the same
    1.
    发明授权
    High-purity lanthanum isoproxide and a process for producing the same 失效
    高纯度异丙酸镧及其制造方法

    公开(公告)号：US06930177B2

    公开(公告)日：2005-08-16

    申请号：US10214338

    申请日：2002-08-07

    申请人： Hidekimi Kadokura ,  Masamichi Matsumoto ,  Tadashi Ishii ,  Yumie Okuhara ,  Yoshinori Kuboshima ,  Hiroshi Matsumoto

    发明人： Hidekimi Kadokura ,  Masamichi Matsumoto ,  Tadashi Ishii ,  Yumie Okuhara ,  Yoshinori Kuboshima ,  Hiroshi Matsumoto

    IPC分类号： C07C29/68 ,  C07C29/76 ,  C07C31/10 ,  C07C31/28 ,  C07F5/00

    CPC分类号： C07C31/10 ,  C07C29/685 ,  C07C31/28

    摘要： The invention provides true La(OiPr)3 preferable as a starting material for an asymmetric synthesis catalyst and a process for producing the same. In this process, anhydrous lanthanum chloride LaCl3 is reacted with potassium isopropoxide K(OiPr) in a mixed solvent of isopropanol and toluene, then the isopropanol is distilled away to replace all the solvent by toluene, then the reaction solution is left, decanted and filtered to give a transparent filtrate, and the solvent is distilled away from the filtrate which is then vacuum-dried under heating, whereby high-purity La(OiPr)3 is obtained in 77% yield. In this high-purity La(OiPr)3, the La content is 97 to 103% of the theoretical content, impurity K is 0.3% or less, (Li+Na) is 0.01% or less, Cl is 0.2% or less, and the degree of association thereof is 5.5 to 6.5.

    摘要翻译： 本发明提供了作为不对称合成催化剂的起始原料的真正的La（OiPr）3 N 3及其制造方法。 在该方法中，将无水氯化镧LaCl 3与异丙醇钾（OiPr）在异丙醇和甲苯的混合溶剂中反应，然后蒸除异丙醇以用甲苯代替所有溶剂，然后 反应溶液倒出并过滤，得到透明滤液，从滤液中蒸除溶剂，然后加热真空干燥，得到高纯度La（OiPr）3 N 收益率77％。 在该高纯度La（OiPr）3 N 3中，La含量为理论含量的97〜103％，杂质K为0.3％以下，（Li + Na）为0.01％以下， Cl为0.2％以下，结合度为5.5〜6.5。

    Process for producing bismuth tertiary amyloxide
    2.
    发明授权
    Process for producing bismuth tertiary amyloxide 失效
    生产铋叔淀粉的方法

    公开(公告)号：US06472547B1

    公开(公告)日：2002-10-29

    申请号：US10080792

    申请日：2002-02-20

    申请人： Satoru Morisawa ,  Masamichi Matsumoto ,  Hidekimi Kadokura

    发明人： Satoru Morisawa ,  Masamichi Matsumoto ,  Hidekimi Kadokura

    IPC分类号： C07F994

    CPC分类号： C07F9/94

    摘要： This invention provides a process for producing bismuth tertiary amyloxide which is a starting material for forming a ferroelectric film such as SrBi2Ta2O9 containing bismuth oxide, or an oxide superconductive film such as Bi2Sr2CaCu2O8, by the CVD method or sol-gel method. This process comprises reacting bismuth bromide with sodium tertiary amyloxide or potassium tertiaryamyloxide in a toluene solvent containing 5 to 30 weight % tetrahydrofuran, then separating a byproduct sodium bromide or potassium bromide by filtration and recovering bismuth tertiary amyloxide by distillation under reduced pressure.

    摘要翻译： 本发明提供了通过CVD法或溶胶 - 凝胶法制备作为形成含有氧化铋的SrBi 2 Ta 2 O 9等铁电体膜，Bi2Sr2CaCu2O8等氧化物超导膜的起始原料的铋叔淀粉的制造方法。 该方法包括使溴化铋与叔淀粉钠或叔胺氧化钾在含有5至30重量％四氢呋喃的甲苯溶剂中反应，然后通过过滤分离副产物溴化钠或溴化钾，并通过减压蒸馏回收铋叔淀粉。