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49 条记录 (耗时 0.027 秒)

    Diyne-containing (co)polymer, processes for producing the same, and cured film
    4.
    发明授权
    Diyne-containing (co)polymer, processes for producing the same, and cured film 有权
    含二炔（共）聚合物，其制备方法和固化膜

    公开(公告)号：US06528605B1

    公开(公告)日：2003-03-04

    申请号：US09708016

    申请日：2000-11-08

    申请人： Toshiyuki Akiike ,  Matthias Patz ,  Masayuki Takahashi ,  Kohei Goto ,  Michinori Nishikawa ,  Takashi Okada ,  Kinji Yamada

    发明人： Toshiyuki Akiike ,  Matthias Patz ,  Masayuki Takahashi ,  Kohei Goto ,  Michinori Nishikawa ,  Takashi Okada ,  Kinji Yamada

    IPC分类号： C08F3800

    CPC分类号： C08G61/00 ,  C08G61/02

    摘要： A diyne-containing (co)polymer which is soluble in organic solvents, has excellent processability, and gives a cured coating film excellent in heat resistance, solvent resistance, and low-dielectric characteristics, and mechanical strength; processes for producing the same; and a cured film. The diyne-containing (co)polymer contains at least 10 mol % repeating units represented by the following formula (1) and has a weight-average molecular weight of from 500 to 1,000,000: &Brketopenst;C≡C&Parenopenst;Y&Parenclosest;nC≡C—Ar&Brketclosest;  (1) wherein Y represents a specific bivalent organic group; Ar represents a bivalent organic group; and n represents 1.

    摘要翻译： 可溶于有机溶剂的二炔（co）聚合物具有优异的加工性能，并且提供耐热性，耐溶剂性和低介电特性以及机械强度优异的固化涂膜; 制造方法; 和固化膜。 含二炔（共）聚合物含有至少10摩尔％的由下式（1）表示的重复单元，其重均分子量为500至1,000,000：其中Y表示特定的二价有机基团; Ar表示二价有机基团; n表示1。

    Composition for film formation, process for producing composition for film formation, method of film formation, and silica-based film
    9.
    发明授权
    Composition for film formation, process for producing composition for film formation, method of film formation, and silica-based film 有权
    用于成膜的组合物，用于制备成膜用组合物的方法，成膜方法和二氧化硅基膜

    公开(公告)号：US06503633B2

    公开(公告)日：2003-01-07

    申请号：US09860914

    申请日：2001-05-21

    申请人： Michinori Nishikawa ,  Kouichi Hasegawa ,  Eiji Hayashi ,  Kinji Yamada

    发明人： Michinori Nishikawa ,  Kouichi Hasegawa ,  Eiji Hayashi ,  Kinji Yamada

    IPC分类号： C08G7716

    CPC分类号： H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/316 ,  Y10T428/31663

    摘要： A composition for film formation which, when used in the production of semiconductor devices and the like, can give interlayer insulating films which differ little in dielectric constant even when obtained through curing under different conditions and have excellent adhesion to substrates, a process for producing the composition, and a silica-based film obtained from the composition. The composition for film formation comprises: (A) a product of hydrolysis and condensation obtained by hydrolyzing and condensing (A-1) at least one compound selected from the group consisting of compounds represented by the following formula (1), compounds represented by the following formula (2), and compounds represented by the following formula (3), and (A-2) at least one compound represented by the following formula (4), in the presence of a catalyst and water; and (B) an organic solvent.

    摘要翻译： 一种成膜用组合物，当用于半导体装置等的制造中时，即使在不同条件下固化而获得的介电常数几乎不相等且对基材的附着性优异，也可以制造出 组合物和由该组合物获得的二氧化硅基膜。 用于成膜的组合物包括：（A）通过水解和缩合获得的水解和缩合产物（A-1）至少一种选自由下式（1）表示的化合物的化合物，由 下述式（2）表示的化合物和下述式（3）所示的化合物和（A-2）至少一种下述式（4）所示的化合物在催化剂和水的存在下反应; 和（B）有机溶剂。

    Stacked film, method for the formation of stacked film, insulating film, and substrate for semiconductor
    10.
    发明授权
    Stacked film, method for the formation of stacked film, insulating film, and substrate for semiconductor 失效
    叠层膜，层叠膜的形成方法，绝缘膜和半导体用基板

    公开(公告)号：US06749944B2

    公开(公告)日：2004-06-15

    申请号：US10252606

    申请日：2002-09-24

    申请人： Michinori Nishikawa ,  Manabu Sekiguchi ,  Atsushi Shiota ,  Kinji Yamada

    发明人： Michinori Nishikawa ,  Manabu Sekiguchi ,  Atsushi Shiota ,  Kinji Yamada

    IPC分类号： B32B904

    CPC分类号： B05D1/60 ,  B05D7/52 ,  C09D183/04 ,  C09D183/14 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02271 ,  H01L21/02282 ,  H01L21/3122 ,  Y10T428/24942 ,  Y10T428/31663

    摘要： A stacked film, a method for the production of the stacked film, an insulating film comprising the stacked film, and a substrate for semiconductor, using the insulating film. The stacked film comprises films of two or more kinds of alkoxysilane hydrolysis condensates having 5 nm or more difference in a mean radius of gyration, or films of alkoxysilane hydrolysis condensate having 0.3 or more difference in the dielectric constant. The stacked film is obtained by applying a coating solution comprising (B) a compound having a mean radius of gyration of less than 10 nm, and then applying a coating solution comprising (A) a compound having a mean radius of gyration of from 10 to 30 nm, followed by heating. The stacked film provides a dielectric film (substrate for semiconductor) having superior adhesion to a CVD film.

    摘要翻译： 叠层膜，制造层叠膜的方法，包括层叠膜的绝缘膜和使用绝缘膜的半导体用基板。 叠层膜包含两个或更多种平均回转半径的差异为5nm以上的烷氧基硅烷水解缩合物的膜或介电常数为0.3以上的烷氧基硅烷水解缩合物的膜。 通过涂布包含（B）平均回转半径为10nm以下的化合物的涂布溶液，然后涂布包含（A）平均半径为10的化合物的涂布溶液， 30nm，然后加热。 叠层膜提供对CVD膜具有优异粘合性的电介质膜（半导体用基板）。