公开(公告)号：US20090275209A1

公开(公告)日：2009-11-05

申请号：US12139902

申请日：2008-06-16

申请人： Shinzo Uchiyama ,  Nobumasa Suzuki ,  Hideo Kitagawa ,  Yusuke Fukuchi

发明人： Shinzo Uchiyama ,  Nobumasa Suzuki ,  Hideo Kitagawa ,  Yusuke Fukuchi

IPC分类号： H01L21/46 ,  C23C16/511

CPC分类号： H01L21/28185 ,  H01J37/32192 ,  H01J37/32449 ,  H01J37/32623 ,  H01J37/32733 ,  H01L21/28202 ,  H01L29/518

摘要： Disclosed is a plasma processing apparatus and a plasma processing method, by which ions of plasma can be injected uniformly over the whole surface of a substrate to be processed, in a short time. Specifically, when the substrate is processed in a reaction container, the gas pressure inside the reaction container is increased. Alternatively, the distance between a plasma processing portion and the substrate is enlarged, or the substrate is temporally moved outwardly of the reaction container. As a further alternative, a shutter is disposed between the plasma producing zone and the substrate. With this procedure, incidence of ions of the plasma upon the substrate can be substantially intercepted for a predetermined time period from the start of plasma production.

摘要翻译： 公开了一种等离子体处理装置和等离子体处理方法，通过该等离子体处理装置和等离子体处理方法能够在短时间内均匀地注入待处理基板的整个表面。 具体地，当在反应容器中处理基板时，反应容器内部的气体压力增加。 或者，等离子体处理部分和基板之间的距离增大，或者基板在时间上移动到反应容器的外部。 作为另一替代方案，快门设置在等离子体产生区域和基板之间。 利用该程序，从等离子体生产开始的预定时间段，可以基本上截断等离子体在基板上的离子的入射。

公开(公告)号：US20060021700A1

公开(公告)日：2006-02-02

申请号：US11190794

申请日：2005-07-27

申请人： Shinzo Uchiyama ,  Nobumasa Suzuki ,  Hideo Kitagawa ,  Yusuke Fukuchi

发明人： Shinzo Uchiyama ,  Nobumasa Suzuki ,  Hideo Kitagawa ,  Yusuke Fukuchi

IPC分类号： C23F1/00

CPC分类号： H01L21/28185 ,  H01J37/32192 ,  H01J37/32449 ,  H01J37/32623 ,  H01J37/32733 ,  H01L21/28202 ,  H01L29/518

摘要： Disclosed is a plasma processing apparatus and a plasma processing method, by which ions of plasma can be injected uniformly over the whole surface of a substrate to be processed, in a short time. Specifically, when the substrate is processed in a reaction container, the gas pressure inside the reaction container is increased. Alternatively, the distance between a plasma processing portion and the substrate is enlarged, or the substrate is temporally moved outwardly of the reaction container. As a further alternative, a shutter is disposed between the plasma producing zone and the substrate. With this procedure, incidence of ions of the plasma upon the substrate can be substantially intercepted for a predetermined time period from the start of plasma production.

摘要翻译： 公开了一种等离子体处理装置和等离子体处理方法，通过该等离子体处理装置和等离子体处理方法能够在短时间内均匀地注入待处理基板的整个表面。 具体地，当在反应容器中处理基板时，反应容器内部的气体压力增加。 或者，等离子体处理部分和基板之间的距离增大，或者基板在时间上移动到反应容器的外部。 作为另一替代方案，快门设置在等离子体产生区域和基板之间。 利用该程序，从等离子体生产开始的预定时间段，可以基本上截断等离子体在基板上的离子的入射。

公开(公告)号：US06677549B2

公开(公告)日：2004-01-13

申请号：US09906231

申请日：2001-07-17

申请人： Nobumasa Suzuki ,  Shinzo Uchiyama ,  Hideo Kitagawa

发明人： Nobumasa Suzuki ,  Shinzo Uchiyama ,  Hideo Kitagawa

IPC分类号： B23K1000

CPC分类号： H01J37/32238

摘要： To provide a production method of a structure with which a degradation of a processing speed is suppressed and plasma processing is performed with using a reliable plasma processing apparatus and which is excellent in repeatability, a plasma processing apparatus, which includes a container whose inside can be exhausted and a gas supply port for supplying a process gas to the container and subjects to plasma processing an object to be processed placed in the container, is characterized in containing a light shielding film that disturbs the incidence of light, which may increase dielectric loss of a permeable window, to this dielectric window on the internal surface of the permeable window permeating high frequency energy for generating the plasma of the above-described gas, and is provided in the above-described container.

摘要翻译： 为了提供一种使用可靠等离子体处理装置并且重复性优异的处理速度劣化被抑制并进行等离子体处理的结构的制造方法，其包括内部可以是容器的等离子体处理装置 用于将处理气体供给到容器并对被处理物体进行等离子体处理的气体供给口被放置在容器中，其特征在于包含遮光膜，其遮断光的入射，这可能增加介电损耗 渗透窗口，渗透到可渗透窗口的内表面上的电介质窗口，其渗入用于产生上述气体的等离子体的高频能量，并且设置在上述容器中。

公开(公告)号：US06916678B2

公开(公告)日：2005-07-12

申请号：US10701431

申请日：2003-11-06

申请人： Hideo Kitagawa ,  Nobumasa Suzuki ,  Shinzo Uchiyama

发明人： Hideo Kitagawa ,  Nobumasa Suzuki ,  Shinzo Uchiyama

IPC分类号： C08J7/00 ,  H01J37/32 ,  H01L21/28 ,  H01L21/314 ,  H01L29/51 ,  H01L21/00

CPC分类号： H01L21/0234 ,  H01J37/32192 ,  H01L21/02332 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/3144 ,  H01L29/518

摘要： A method for modifying a surface of a substrate to be processed, by utilizing plasma includes the steps of adjusting a temperature of the substrate from 200° C. to 400° C., introducing gas including nitrogen atoms or mixture gas including inert gas and the gas including nitrogen atoms into a plasma process chamber, adjusting pressure in the plasma process chamber above 13.3 Pa, generating plasma in the plasma process chamber, and injecting ions equal to or smaller than 10 eV in the plasma into the substrate to be processed.

摘要翻译： 通过利用等离子体对待处理的基板的表面进行改性的方法包括以下步骤：将基板的温度从200℃调节至400℃，引入包括氮原子的气体或包括惰性气体的混合气体，以及 包括氮原子的气体进入等离子体处理室，调节等离子体处理室中的压力高于13.3Pa，在等离子体处理室中产生等离子体，并将等离子体中等于或小于10eV的离子注入待处理的基板中。

公开(公告)号：US20050196973A1

公开(公告)日：2005-09-08

申请号：US11071246

申请日：2005-03-04

申请人： Nobumasa Suzuki ,  Hideo Kitagawa

发明人： Nobumasa Suzuki ,  Hideo Kitagawa

IPC分类号： H01L21/318 ,  H01L21/4763

CPC分类号： H01L21/0214 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/3105 ,  H01L21/3115

摘要： Disclosed is a plasma nitriding method by which an ultra-thin oxide-nitride film having a half-value depth of not greater than 0.8 nm can be produced, overcoming various inconveniences involved in conventional plasma nitriding methods. In one preferred form of the present invention, the plasma nitriding method includes the steps of introducing a substrate to be processed, into a reaction chamber, evacuating the reaction chamber, supplying a gas containing nitrogen atoms, into the reaction chamber at a predetermined flow rate, adjusting an exhaust conductance to maintain a predetermined pressure inside the reaction chamber, and applying an electric voltage into the reaction chamber to produce plasma to thereby cause nitriding of the surface of the substrate, wherein the gas further contains hydrogen atoms, wherein the predetermined pressure is not less than 2 Torr, and wherein a spacing between the substrate and a densest portion of the plasma is not less than 75 nm.

摘要翻译： 公开了一种等离子体氮化方法，其可以生产半值深度不大于0.8nm的超薄氧化物氮化物膜，以克服常规等离子体氮化方法中涉及的各种不便。 在本发明的一个优选形式中，等离子体氮化方法包括以下步骤：将预处理的基材以预定的流速引入反应室，将反应室抽空，将含有氮原子的气体供给反应室 调节排气电导以维持反应室内的预定压力，并向反应室施加电压以产生等离子体，从而导致衬底表面渗氮，其中气体还含有氢原子，其中预定压力 不小于2Torr，并且其中衬底和等离子体最稠密部分之间的间隔不小于75nm。

公开(公告)号：US08012822B2

公开(公告)日：2011-09-06

申请号：US12342360

申请日：2008-12-23

申请人： Naomu Kitano ,  Yusuke Fukuchi ,  Nobumasa Suzuki ,  Hideo Kitagawa

发明人： Naomu Kitano ,  Yusuke Fukuchi ,  Nobumasa Suzuki ,  Hideo Kitagawa

IPC分类号： H01L29/72

CPC分类号： H01L21/28229 ,  C23C14/185 ,  C23C14/34 ,  C23C14/5853 ,  C23C14/5893 ,  H01L21/02074 ,  H01L21/28185 ,  H01L21/3105 ,  H01L21/3145 ,  H01L21/31645 ,  H01L21/321 ,  H01L29/513 ,  H01L29/517

摘要： A process for forming dielectric films containing at least metal atoms, silicon atoms, and oxygen atoms on a silicon substrate comprises a first step of oxidizing a surface portion of the silicon substrate to form a silicon dioxide film; a second step of forming a metal film on the silicon dioxide film in a non-oxidizing atmosphere; a third step of heating in a non-oxidizing atmosphere to diffuse the metal atoms constituting the metal film into the silicon dioxide film; and a fourth step of oxidizing the silicon dioxide film containing the diffused metal atoms to form the film containing the metal atoms, silicon atoms, and oxygen atoms.

摘要翻译： 在硅衬底上形成至少含有金属原子，硅原子和氧原子的介电膜的工艺包括：氧化硅衬底表面部分以形成二氧化硅膜的第一步骤; 在非氧化性气氛中在二氧化硅膜上形成金属膜的第二工序; 在非氧化气氛中加热第三步骤，将构成金属膜的金属原子扩散到二氧化硅膜中; 以及氧化含有扩散金属原子的二氧化硅膜以形成含有金属原子，硅原子和氧原子的膜的第四步骤。

公开(公告)号：US20090170341A1

公开(公告)日：2009-07-02

申请号：US12342360

申请日：2008-12-23

申请人： Naomu Kitano ,  Yusuke Fukuchi ,  Nobumasa Suzuki ,  Hideo Kitagawa

发明人： Naomu Kitano ,  Yusuke Fukuchi ,  Nobumasa Suzuki ,  Hideo Kitagawa

IPC分类号： H01L21/768

CPC分类号： H01L21/28229 ,  C23C14/185 ,  C23C14/34 ,  C23C14/5853 ,  C23C14/5893 ,  H01L21/02074 ,  H01L21/28185 ,  H01L21/3105 ,  H01L21/3145 ,  H01L21/31645 ,  H01L21/321 ,  H01L29/513 ,  H01L29/517

摘要： A process for forming dielectric films containing at least metal atoms, silicon atoms, and oxygen atoms on a silicon substrate comprises a first step of oxidizing a surface portion of the silicon substrate to form a silicon dioxide film; a second step of forming a metal film on the silicon dioxide film in a non-oxidizing atmosphere; a third step of heating in a non-oxidizing atmosphere to diffuse the metal atoms constituting the metal film into the silicon dioxide film; and a fourth step of oxidizing the silicon dioxide film containing the diffused metal atoms to form the film containing the metal atoms, silicon atoms, and oxygen atoms.

摘要翻译： 在硅衬底上形成至少含有金属原子，硅原子和氧原子的介电膜的工艺包括：氧化硅衬底的表面部分以形成二氧化硅膜的第一步骤; 在非氧化性气氛中在二氧化硅膜上形成金属膜的第二工序; 在非氧化气氛中加热第三步骤，将构成金属膜的金属原子扩散到二氧化硅膜中; 以及氧化含有扩散金属原子的二氧化硅膜以形成含有金属原子，硅原子和氧原子的膜的第四步骤。

公开(公告)号：US20080053816A1

公开(公告)日：2008-03-06

申请号：US11843372

申请日：2007-08-22

申请人： Nobumasa Suzuki ,  Hideo Kitagawa

发明人： Nobumasa Suzuki ,  Hideo Kitagawa

IPC分类号： H05F3/00 ,  C23C16/00

CPC分类号： H01J37/3222 ,  H01J37/32192

摘要： A plasma processing apparatus includes a plasma processing chamber and a source of microwaves. The microwaves are introduced to the processing chamber by a slotted annular waveguide having inner and outer arc-shaped slots. The distance between the centerline of the inner and outer arc-shaped slots is set to be an even multiple of a half wavelength of a microwave surface wave propagating along a surface of a dielectric window of the chamber. A distance between the centerline of the outer arc-shaped slot and an outer periphery of the dielectric window is set to be an odd multiple of the half wavelength of the microwave surface wave.

摘要翻译： 等离子体处理装置包括等离子体处理室和微波源。 通过具有内弧形槽和外弧形槽的开槽环形波导将微波引入处理室。 内弧形槽和外弧形槽的中心线之间的距离被设定为沿室的电介质窗表面传播的微波表面波的半波​​长的偶数倍。 将外弧形槽的中心线与电介质窗的外周之间的距离设定为微波表面波的半波​​长的奇数倍。

公开(公告)号：US06541982B2

公开(公告)日：2003-04-01

申请号：US09760667

申请日：2001-01-17

申请人： Hideo Kitagawa ,  Nobumasa Suzuki

发明人： Hideo Kitagawa ,  Nobumasa Suzuki

IPC分类号： G01N2762

CPC分类号： G01R19/0061 ,  H05H1/0062

摘要： A plasma density measuring method which includes producing a surface wave at an interface between a dielectric member and a plasma, and measuring at least one of a plasma density and a relative change in plasma density, on the basis of the surface wave. A plasma processing system including a container having a window, and for storing therein a gas introduced thereinto, a dielectric member for closing the window of the container, a plasma voltage source for applying a high frequency voltage through the dielectric member to produce a plasma by use of the gas inside the container, wherein a predetermined process is performed by use of the thus produced plasma, a detecting system for detecting an electric field intensity distribution of a surface wave propagated through the dielectric member, and a feedback system for feeding back the result of detection by the detecting system, to determine a processing condition for the process.

摘要翻译： 一种等离子体密度测量方法，其包括在介电构件和等离子体之间的界面处产生表面波，并且基于表面波测量等离子体密度和等离子体密度的相对变化中的至少一个。 一种等离子体处理系统，包括具有窗口的容器，并且其中存储有引入其中的气体，用于封闭容器窗口的电介质构件，用于通过电介质构件施加高频电压以产生等离子体的等离子体电压源 使用容器内部的气体，其中通过使用由此产生的等离子体执行预定处理，用于检测通过电介质构件传播的表面波的电场强度分布的检测系统，以及用于反馈 由检测系统检测的结果，以确定该过程的处理条件。

公开(公告)号：US07569070B2

公开(公告)日：2009-08-04

申请号：US11326412

申请日：2006-01-06

申请人： Nobumasa Suzuki ,  Yutaka Nohara ,  Shinnosuke Nakahara ,  Shigenobu Sato ,  Kazumasa Ueyama ,  Kazuhiro Hasegawa ,  Kazuya Oribe ,  Hiroshi Takamido

发明人： Nobumasa Suzuki ,  Yutaka Nohara ,  Shinnosuke Nakahara ,  Shigenobu Sato ,  Kazumasa Ueyama ,  Kazuhiro Hasegawa ,  Kazuya Oribe ,  Hiroshi Takamido

IPC分类号： A61B17/70

CPC分类号： A61B17/7035 ,  A61B17/7041 ,  A61B17/7049

摘要： A rod connector is provided with a rod supporting portion in a part of a connector main body supported to a leading end of a shank portion. A rod pressing portion is provided in a side opposing to the rod supporting portion, and a rod is clamped and fixed by the rod pressing portion and the rod supporting portion. At this time, small convex portions provided in the rod supporting portion eat into the rod.

摘要翻译： 杆连接器在支撑在柄部的前端的连接器主体的一部分中设置有杆支撑部。 杆按压部设置在与杆支撑部相对的一侧，杆通过杆按压部和杆支撑部夹持固定。 此时，设置在杆支撑部中的小凸部进入杆。