公开(公告)号：US5963242A

公开(公告)日：1999-10-05

申请号：US739220

申请日：1996-10-29

申请人： Hideo Nakayama ,  Hiromi Otoma ,  Nobuaki Ueki ,  Yasuji Seko ,  Akemi Murakami ,  Mario Fuse ,  Masao Ito ,  Izumi Iwasa

发明人： Hideo Nakayama ,  Hiromi Otoma ,  Nobuaki Ueki ,  Yasuji Seko ,  Akemi Murakami ,  Mario Fuse ,  Masao Ito ,  Izumi Iwasa

IPC分类号： B41J2/44 ,  B41J2/45 ,  B41J2/455 ,  B41J2/435 ,  B41J2/47

CPC分类号： B41J2/45

摘要： An image recording apparatus has an array light source having a plurality of light-emitting elements arrayed in a predetermined density; a photosensitive member exposed to light beams emitted from the plural light-emitting elements so that images are recorded by fixing a traveling path of the light beams from the plural light-emitting elements to the photosensitive member and by moving the photosensitive member relative to the array light source; a beam-converging unit which intercrosses a bundle of the light beams emitted from the light-emitting elements onto a beam-conversion point; and an focusing unit disposed between the beam-converging unit and the photosensitive member, which images the light beams emitted from the plural of light-emitting elements and intercrossed by the beam-converging unit onto the photosensitive member.

摘要翻译： 一种图像记录装置，具有排列成规定密度的多个发光元件的阵列光源; 一个感光元件暴露于从多个发光元件发射的光束上，使得通过将来自多个发光元件的光束的行进路径固定在感光元件上并通过使感光元件相对于阵列移动来记录图像 光源; 光束会聚单元，其将从发光元件发射的光束交叉到光束转换点; 以及设置在所述光束会聚单元和所述感光构件之间的聚焦单元，其对从所述多个发光元件发射的光束进行成像，并且通过所述光束会聚单元与所述感光构件交叉。

公开(公告)号：US5880766A

公开(公告)日：1999-03-09

申请号：US751674

申请日：1996-11-18

申请人： Akemi Murakami ,  Kaoru Yasukawa ,  Hideo Nakayama ,  Hideki Fukunaga ,  Nobuaki Ueki ,  Hiromi Otoma ,  Yasuji Seko ,  Mario Fuse

发明人： Akemi Murakami ,  Kaoru Yasukawa ,  Hideo Nakayama ,  Hideki Fukunaga ,  Nobuaki Ueki ,  Hiromi Otoma ,  Yasuji Seko ,  Mario Fuse

IPC分类号： B41J2/44 ,  G06K15/12 ,  H04N1/04 ,  H04N1/047 ,  H04N1/12 ,  H04N1/193 ,  G03G15/04

CPC分类号： H04N1/047 ,  G06K15/1238 ,  H04N1/1932 ,  H04N1/12 ,  H04N1/193 ,  H04N2201/046 ,  H04N2201/04729 ,  H04N2201/04755

摘要： An apparatus for correcting positional deviation of the light source emitting light beams in an image recording apparatus is disclosed which corrects change of the image size (dimensions of the image) on the photosensitive member due to positional deviations of beam spots on the photosensitive member on account of physical distortions caused by external vibration, temperature change, and the like. Changes in the diameter of detective light beams are measured by photodetecting portions 5.sub.R and 5.sub.L and piezoelectric devices 6a and 6b are driven based on the results of the detection, whereby the semiconductor laser array 1 is moved so that the multiplication b/a for the image size may be kept constant.

摘要翻译： 公开了一种用于校正图像记录装置中的光源发射光束的位置偏差的装置，其用于校正由于光敏部件上光束部件上的光束点的位置偏差导致的感光部件上的图像尺寸（尺寸）的变化 由外部振动，温度变化等引起的物理失真。 通过光检测部5R和5L测量检测光束的直径变化，并且基于检测结果来驱动压电器件6a和6b，由此使半导体激光器阵列1移动，使得图像的乘法b / a 尺寸可能保持不变。

公开(公告)号：US5809052A

公开(公告)日：1998-09-15

申请号：US731750

申请日：1996-10-18

申请人： Yasuji Seko ,  Akemi Murakami ,  Hiromi Otoma ,  Nobuaki Ueki ,  Hideki Fukunaga ,  Hideo Nakayama ,  Mario Fuse

发明人： Yasuji Seko ,  Akemi Murakami ,  Hiromi Otoma ,  Nobuaki Ueki ,  Hideki Fukunaga ,  Hideo Nakayama ,  Mario Fuse

IPC分类号： H01S5/062 ,  H01S5/40 ,  H01S3/08

CPC分类号： H01S5/4031 ,  H01S5/0021 ,  H01S5/06216

摘要： A semiconductor laser array driving method for driving a semiconductor laser array having a plurality of light-emitting points arranged on a base member. The semiconductor laser array driving method has a step of driving the plurality of light-emitting points by a driving pulse current of a pulse width and a duty factor meeting an inequality: .DELTA.T.sub.1 /.DELTA.T.sub.0

摘要翻译： 一种用于驱动具有布置在基底构件上的多个发光点的半导体激光器阵列的半导体激光阵列驱动方法。 半导体激光阵列驱动方法具有通过满足不等式的脉冲宽度和占空比的驱动脉冲电流来驱动多个发光点的步骤：DELTA T1 / DELTA T0 <+ E，fra 1/2 + EE 其中，当使用连续电流以连续驱动模式驱动半导体激光器阵列时，DELTA T0是发光点的有源层中的温度升高，并且DELTA T1是发光的有源层中的温度升高 当使用脉冲电流以脉冲驱动模式驱动半导体激光器阵列时的点。 在半导体激光器阵列驱动方法中，多个发光点由占空比为0.4以下的驱动脉冲电流驱动，满足不等式：y <3.1exp（-8.9x），其中x是占空系数 y是脉冲宽度（mu s）。

公开(公告)号：US5990494A

公开(公告)日：1999-11-23

申请号：US827358

申请日：1997-03-27

申请人： Yasuji Seko ,  Akemi Murakami ,  Hiromi Otoma ,  Nobuaki Ueki ,  Mario Fuse

发明人： Yasuji Seko ,  Akemi Murakami ,  Hiromi Otoma ,  Nobuaki Ueki ,  Mario Fuse

IPC分类号： B41J2/44 ,  B41J2/45 ,  B41J2/455 ,  F21S2/00 ,  F21V23/00 ,  F21Y101/02 ,  H01L33/06 ,  H01L33/16 ,  H01L33/26 ,  H01L33/58 ,  H01L33/60 ,  H01S5/00 ,  H01S5/02 ,  H04N1/04 ,  H01L33/00

CPC分类号： B41J2/45

摘要： Described is an optical equipment using a semiconductor light emitting device array which has light emitting points formed thereon at a high density and has highly reliability. The optical equipment according to the present invention features that it is equipped with a light emitting device array on which light emitting points LP have been arranged two-dimensionally, focusing means for focusing the light from the light emitting points, photo-detecting means which is disposed at the position where the light focused through the focusing means forms image formation points, and transferring means for transferring the image formation points relative to the photo-detecting means; said light-emitting device array being composed of a plurality of semiconductor chips and adjacent end surfaces of two semiconductor chips being bonded each other so as to have an inclination against the transferring direction.

摘要翻译： 描述了使用其中以高密度形成有发光点并具有高度可靠性的半导体发光器件阵列的光学设备。 根据本发明的光学设备的特征在于，它配备有发光器件阵列，发光点LP已经二维排列在其上，聚焦装置用于聚焦来自发光点的光，光检测装置是 设置在通过聚焦装置聚焦的光形成图像形成点的位置，以及用于相对于光检测装置传送图像形成点的传送装置; 所述发光器件阵列由多个半导体芯片组成，并且两个半导体芯片的相邻端面彼此接合以具有相对于传输方向的倾斜。

公开(公告)号：US5588016A

公开(公告)日：1996-12-24

申请号：US523389

申请日：1995-09-05

申请人： Hiromi Otoma ,  Nobuaki Ueki ,  Hideki Fukunaga ,  Hideo Nakayama ,  Yasuji Seko ,  Mario Fuse

发明人： Hiromi Otoma ,  Nobuaki Ueki ,  Hideki Fukunaga ,  Hideo Nakayama ,  Yasuji Seko ,  Mario Fuse

IPC分类号： H01S5/00 ,  H01S5/042 ,  H01S5/20 ,  H01S5/32 ,  H01S5/323 ,  H01S5/343 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/0421 ,  H01S5/20 ,  H01S5/2059 ,  H01S5/3206 ,  H01S5/321 ,  H01S5/32325 ,  H01S5/34326

摘要： A semiconductor laser device in which semiconductor layers of an n-type cladding layer, a quantum well active layer 106, a p-type cladding layer, and an intermediate layer are formed on an n-type GaAs substrate in successive order, and a mixed-crystal is formed in a region except the semiconductor layers of the contact layer and the lower part of the contact layer by diffusing Si into the structure from above the intermediate layer, characterized in that the contact layer and the intermediate layer are made of n-type or nonconductive semiconductor material, and a p-type low-resistance region, formed by diffusing Zn into the structure from above the contact layer, is profiled so as not to overlap with the mixed-crystal region formed by Si diffusion.

摘要翻译： 在n型GaAs衬底上依次形成有n型包覆层，量子阱有源层106，p型覆层，中间层的半导体层的半导体激光器件，混合 通过从中间层的上方将Si扩散到结构体中，在接触层的半导体层和接触层的下部之间的区域中形成晶体，其特征在于，接触层和中间层由n- 型或非导电半导体材料，以及通过从接触层上方将Zn扩散到结构中形成的p型低电阻区域，以与Si扩散形成的混合晶体区域不重叠。

公开(公告)号：US5648295A

公开(公告)日：1997-07-15

申请号：US687938

申请日：1996-07-29

申请人： Hiromi Otoma ,  Nobuaki Ueki ,  Hideki Fukunaga ,  Hideo Nakayama ,  Yasuji Seko ,  Mario Fuse

发明人： Hiromi Otoma ,  Nobuaki Ueki ,  Hideki Fukunaga ,  Hideo Nakayama ,  Yasuji Seko ,  Mario Fuse

IPC分类号： H01S5/00 ,  H01S5/042 ,  H01S5/20 ,  H01S5/32 ,  H01S5/323 ,  H01S5/343 ,  H01L21/20

CPC分类号： B82Y20/00 ,  H01S5/0421 ,  H01S5/20 ,  H01S5/2059 ,  H01S5/3206 ,  H01S5/321 ,  H01S5/32325 ,  H01S5/34326

摘要： A semiconductor laser device in which semiconductor layers of an n-type cladding layer, a quantum well active layer 106, a p-type cladding layer, and an intermediate layer are formed on an n-type GaAs substrate in successive order, and a mixed-crystal is formed in a region except the semiconductor layers of the contact layer and the lower part of the contact layer by diffusing Si into the structure from above the intermediate layer, characterized in that the contact layer and the intermediate layer are made of n-type or nonconductive semiconductor material, and a p-type low-resistance region, formed by diffusing Zn into the structure from above the contact layer, is profiled so as not to overlap with the mixed-crystal region formed by Si diffusion.

摘要翻译： 在n型GaAs衬底上依次形成有n型包覆层，量子阱有源层106，p型覆层，中间层的半导体层的半导体激光器件，混合 通过从中间层的上方将Si扩散到结构体中，在接触层的半导体层和接触层的下部之间的区域中形成晶体，其特征在于，接触层和中间层由n- 型或非导电半导体材料，以及通过从接触层上方将Zn扩散到结构中形成的p型低电阻区域，以与Si扩散形成的混合晶体区域不重叠。

公开(公告)号：US5491709A

公开(公告)日：1996-02-13

申请号：US106700

申请日：1993-08-16

申请人： Yasuji Seko ,  Hiromi Otoma ,  Nobuaki Ueki ,  Hideki Fukunaga ,  Hideo Nakayama ,  Kiichi Ueyanagi ,  Yasuhiro Shiraki

发明人： Yasuji Seko ,  Hiromi Otoma ,  Nobuaki Ueki ,  Hideki Fukunaga ,  Hideo Nakayama ,  Kiichi Ueyanagi ,  Yasuhiro Shiraki

IPC分类号： H01S5/00 ,  H01S5/042 ,  H01S5/20 ,  H01S5/32 ,  H01S5/323 ,  H01S5/34 ,  H01S5/343 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/32325 ,  H01S5/34326 ,  H01S5/2009 ,  H01S5/3211 ,  H01S5/3406 ,  H01S5/3407

摘要： In a semiconductor laser device according to the invention, a clad layer includes first clad layers, each of which has a greater band gap than an active layer and has a thickness of 0.003 to 0.3 .mu.m, and second clad layers each of which has a lower refractive index than the active layer, and the first clad layers are disposed nearer to the active layer than the second clad layers, respectively. In this structure, the first clad layers confine carriers in the active layer while the second clad layers confine the light in the active layer. Since each of the first clad layers is formed of a thin film, the carriers are hard to move outwardly from the active layer due to the tunnel phenomenon thereof and, even if the lattice constant thereof is slightly different, the first clad layer can be lattice matched to a substrate. For this reason, the materials of the second clad layers can be selected without taking into consideration the size of the band gap thereof. This makes it possible to reduce the oscillation threshold value current density of the laser as well as to improve the temperature characteristic of the laser.

摘要翻译： 在根据本发明的半导体激光器件中，包覆层包括第一覆盖层，其每一个具有比有源层更大的带隙，并且具有0.003至0.3μm的厚度，以及第二覆盖层具有 比有源层​​低的折射率，并且第一包层分别设置成比第二包层更靠近有源层。 在该结构中，第一覆盖层将载流子限制在有源层中，而第二覆盖层将光限制在有源层中。 由于每个第一包层由薄膜形成，所以载流子由于其隧道现象而难以从有源层向外移动，并且即使其晶格常数稍微不同，第一覆层可以是晶格 与底物匹配。 为此，可以选择第二包层的材料而不考虑其带隙的尺寸。 这使得可以减小激光器的振荡阈值电流密度以及提高激光器的温度特性。

公开(公告)号：US5253265A

公开(公告)日：1993-10-12

申请号：US832053

申请日：1992-02-06

申请人： Yasuji Seko ,  Kiichi Ueyanagi ,  Hideo Nakayama ,  Hideki Fukunaga ,  Nobuaki Ueki

发明人： Yasuji Seko ,  Kiichi Ueyanagi ,  Hideo Nakayama ,  Hideki Fukunaga ,  Nobuaki Ueki

IPC分类号： H01S5/00 ,  H01S5/20 ,  H01S5/343 ,  H01S3/19

CPC分类号： H01S5/34313 ,  B82Y20/00 ,  H01S5/2059 ,  H01S5/3432

摘要： A semiconductor laser device having an active layer which is comprised of a quantum well layer formed of a mixed crystal material, and barrier layers provided on both sides of the quantum well layer in such a manner as to sandwich the same, is characterized in that Ge is thermally diffused in a portion of the active layer to disorder the quantum well layer and the barrier layers at that portion so as to form a non-light-emitting area with a low refractive index, while the quantum well layer and the barrier layers at a portion where Ge is not diffused is formed as a refractive index waveguide which is a light-emitting area.

摘要翻译： 具有由混合晶体材料形成的量子阱层的有源层和以夹着该量子阱层的方式设置在量子阱层的两侧的势垒层的半导体激光器件的特征在于Ge 在有源层的一部分中热扩散以使该部分处的量子阱层和阻挡层紊乱，以便形成具有低折射率的非发光区域，而量子阱层和阻挡层在 Ge不被扩散的部分形成为作为发光区域的折射率波导管。

公开(公告)号：US5978403A

公开(公告)日：1999-11-02

申请号：US939880

申请日：1997-09-29

申请人： Izumi Iwasa ,  Hideaki Ashikaga ,  Yasuji Seko

发明人： Izumi Iwasa ,  Hideaki Ashikaga ,  Yasuji Seko

IPC分类号： B41J2/44 ,  B41J2/45 ,  B41J2/455 ,  G02F1/1343 ,  G02F1/1368 ,  H01L27/15 ,  H01S5/00 ,  H01S5/042 ,  H01S5/40 ,  H01S3/10

CPC分类号： H01S5/405 ,  G02F1/134336 ,  H01L27/156 ,  G02F1/1368 ,  H01S5/042 ,  H01S5/0425

摘要： Laser elements are arranged in two dimensions in an elongated region which is longer in the horizontal direction than in the vertical direction, wherein n laser elements are arranged in the horizontal direction, while m laser elements in the vertical direction, where n>m. The anode wiring extends to a direction which is inclined to the horizontal direction and the cathode wiring extends to another direction inclined to the horizontal direction, thereby the anode wiring and the cathode wiring crossing with each other. The anodes of m laser elements in maximum arranged in the direction of the anode wiring are connected to an anode wire, while the cathodes of m laser elements in maximum arranged in the cathode wiring are connected to a cathode wire. Accordingly, even if the array is longer in the horizontal direction and a large number of laser elements are aligned in the horizontal direction, the wiring resistance and electrostatic capacitance of each wire forming the oblique matrix wiring can be small and the operation delay of the laser element can also be small.

摘要翻译： 激光元件在水平方向上比垂直方向更长的细长区域中排列，其中n个激光元件沿水平方向排列，而m个激光元件在垂直方向上，其中n> m。 阳极配线向水平方向倾斜的方向延伸，阴极配线向与水平方向倾斜的另一方向延伸，阳极配线和阴极配线相互交叉。 在阳极布线方向上最大布置的m个激光元件的阳极连接到阳极线，而阴极布线中最多设置的m个激光元件的阴极连接到阴极线。 因此，即使阵列在水平方向上较长并且大量的激光元件在水平方向上排列，则形成倾斜矩阵布线的每根线的布线电阻和静电电容可以较小，并且激光器的操作延迟 元素也可以小。

公开(公告)号：US08170329B2

公开(公告)日：2012-05-01

申请号：US12398268

申请日：2009-03-05

申请人： Yasuji Seko ,  Hiroyuki Hotta ,  Yasuyuki Saguchi

发明人： Yasuji Seko ,  Hiroyuki Hotta ,  Yasuyuki Saguchi

IPC分类号： G06K9/00

CPC分类号： G06K9/3216 ,  G06T7/73 ,  G06T2207/30204 ,  G06T2207/30208

摘要： A position measuring system includes: an image capturing unit that captures reference points provided on an object, the reference points composed of at least four first reference points provided respectively at vertices of a polygon or at vertices and a barycenter of a polygon and at least one second reference point provided so as to have a specific positional relationship with respect to the first reference points; an identification unit that identifies images of the first reference points and the second reference point captured by the image capturing unit, on the basis of positional relationships between the images of the first reference points and the second reference point; and a calculation unit that calculates a three-dimensional position and three-axial angles of the object on the basis of positional relationships of the images of the first reference points identified by the identification unit.

摘要翻译： 位置测量系统包括：图像捕获单元，其捕获设置在对象上的参考点，所述参考点由至少四个第一参考点组成，所述至少四个第一参考点分别设置在多边形的顶点或多边形的顶点和重心处，并且至少一个 第二参考点被设置为具有相对于第一参考点的特定位置关系; 识别单元，基于第一参考点和第二参考点的图像之间的位置关系来识别由图像捕获单元捕获的第一参考点和第二参考点的图像; 以及计算单元，其基于由识别单元识别的第一参考点的图像的位置关系来计算对象的三维位置和三角度。